GTM GBAV99

1/2
G B AV 9 9
Description
The GBAV99 consists of two diodes in a plastic surface mount package. The diodes are connected in series and the unit is
designed for high-speed switching application in hybrid thick and thin-film circuits.
Package Dimensions
Style : Pin1.Anode 2.Cathode
3.Common Connection
Millimeter
Millimeter
REF.
REF.
Min.
Max.
Min.
Max.
A
2.70
3.10
G
1.90 REF.
B
2.40
2.80
H
1.00
1.30
C
1.40
1.60
K
0.10
0.20
D
0.35
0.50
J
0.40
E
0
0.10
L
0.85
1.15
0
10
F
0.45
0.55
M
Absolute Maximum Ratings at Ta = 25
Parameter
Junction Temperature
Storage Temperature
Reverse Voltage
Repetitive Reverse Voltage
Forward Current
Repetitive Forward Current
Forward Surge Current(1ms)
Total Power Dissipation
Characteristics
Symbol
Tj
Tstg
Ratings
+150
-65~+150
70
70
150
500
1000
250
PD
V
V
mA
mA
mA
mW
at Ta = 25
Characteristic
Symbol
Min.
Max.
Unit
V(BR)
70
-
V
VF(1)
-
715
mV
IF=1mA
VF(2)
-
855
mV
IF=10mA
VF(3)
-
1000
mV
IF=50mA
VF(4)
-
1250
mV
IF=150mA
Reverse Current
IR
-
Total Capacitance
CT
Reverse Recovery Time
Trr
Reverse Breakdown Voltage
Forward Voltage
Unit
-
Test Conditions
IR=100uA
2.5
uA
VR=70V
1.5
pF
VR=0, f=1MHz
6
nS
IF=IR=10mA, RL=100
measured at IR=1mA
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Characteristics Curve
Important Notice:
All rights are reserved. Reproduction in whole or in part is prohibited without the prior written approval of GTM.
GTM reserves the right to make changes to its products without notice.
GTM semiconductor products are not warranted to be suitable for use in life-support Applications, or systems.
GTM assumes no liability for any consequence of customer product design, infringement of patents, or application assistance.
Head Office And Factory:
Taiwan: No. 17-1 Tatung Rd. Fu Kou Hsin-Chu Industrial Park, Hsin-Chu, Taiwan, R. O. C.
TEL : 886-3-597-7061 FAX : 886-3-597-9220, 597-0785
China: (201203) No.255, Jang-Jiang Tsai-Lueng RD. , Pu-Dung-Hsin District, Shang-Hai City, China
TEL : 86-21-5895-7671 FAX : 86-21-38950165