1/2 G B AV 9 9 Description The GBAV99 consists of two diodes in a plastic surface mount package. The diodes are connected in series and the unit is designed for high-speed switching application in hybrid thick and thin-film circuits. Package Dimensions Style : Pin1.Anode 2.Cathode 3.Common Connection Millimeter Millimeter REF. REF. Min. Max. Min. Max. A 2.70 3.10 G 1.90 REF. B 2.40 2.80 H 1.00 1.30 C 1.40 1.60 K 0.10 0.20 D 0.35 0.50 J 0.40 E 0 0.10 L 0.85 1.15 0 10 F 0.45 0.55 M Absolute Maximum Ratings at Ta = 25 Parameter Junction Temperature Storage Temperature Reverse Voltage Repetitive Reverse Voltage Forward Current Repetitive Forward Current Forward Surge Current(1ms) Total Power Dissipation Characteristics Symbol Tj Tstg Ratings +150 -65~+150 70 70 150 500 1000 250 PD V V mA mA mA mW at Ta = 25 Characteristic Symbol Min. Max. Unit V(BR) 70 - V VF(1) - 715 mV IF=1mA VF(2) - 855 mV IF=10mA VF(3) - 1000 mV IF=50mA VF(4) - 1250 mV IF=150mA Reverse Current IR - Total Capacitance CT Reverse Recovery Time Trr Reverse Breakdown Voltage Forward Voltage Unit - Test Conditions IR=100uA 2.5 uA VR=70V 1.5 pF VR=0, f=1MHz 6 nS IF=IR=10mA, RL=100 measured at IR=1mA 2/2 Characteristics Curve Important Notice: All rights are reserved. Reproduction in whole or in part is prohibited without the prior written approval of GTM. GTM reserves the right to make changes to its products without notice. GTM semiconductor products are not warranted to be suitable for use in life-support Applications, or systems. GTM assumes no liability for any consequence of customer product design, infringement of patents, or application assistance. Head Office And Factory: Taiwan: No. 17-1 Tatung Rd. Fu Kou Hsin-Chu Industrial Park, Hsin-Chu, Taiwan, R. O. C. TEL : 886-3-597-7061 FAX : 886-3-597-9220, 597-0785 China: (201203) No.255, Jang-Jiang Tsai-Lueng RD. , Pu-Dung-Hsin District, Shang-Hai City, China TEL : 86-21-5895-7671 FAX : 86-21-38950165