1/1 GMBD4148 Description The GMBD4148 is designed for high-speed switching application in hybrid thick-and thin-film circuits. The devices is manufactured by the silicon epitaxial planar process and packed in plastic surface mount package. Package Dimensions Style : Pin 1.Anode 2.NC 3.Cathode REF. A B C D E F Millimeter Min. Max. 2.70 3.10 2.40 2.80 1.40 1.60 0.35 0.50 0 0.10 0.45 0.55 REF. G H K J L M Millimeter Min. Max. 1.90 REF. 1.00 1.30 0.10 0.20 0.40 0.85 1.15 0 10 Absolute Maximum Ratings at Ta = 25 Parameter Junction Temperature Storage Temperature Continuous Reverse Voltage Continuous Forward Current Peak Forward Surge Current Characteristics Characteristic Symbol Tj Tstg VR IF IFSM Ratings +150 -65~+150 70 200 500 Unit V mA mA at Ta = 25 Symbol Min. Max. Unit Forward Voltage VF - 1 V IF=10mA Test Conditions Reverse Breakdown VR 100 - V IR=100uA Reverse Current IR - 5 uA VR=75V Total Capacitance CT - 4 pF VR=0V,F=1MHz Reverse Recovery Time Trr - 4 nS IF=IR=10mA, RL=100 Important Notice: All rights are reserved. Reproduction in whole or in part is prohibited without the prior written approval of GTM. GTM reserves the right to make changes to its products without notice. GTM semiconductor products are not warranted to be suitable for use in life-support Applications, or systems. GTM assumes no liability for any consequence of customer product design, infringement of patents, or application assistance. Head Office And Factory: Taiwan: No. 17-1 Tatung Rd. Fu Kou Hsin-Chu Industrial Park, Hsin-Chu, Taiwan, R. O. C. TEL : 886-3-597-7061 FAX : 886-3-597-9220, 597-0785 China: (201203) No.255, Jang-Jiang Tsai-Lueng RD. , Pu-Dung-Hsin District, Shang-Hai City, China TEL : 86-21-5895-7671 FAX : 86-21-38950165 Measured at IR=1mA