1/3 GBG640CT Description The GBG640CT is designed for low voltage, high frequency inverter, free wheeling, and polarity protection application. Package Dimensions REF. Millimeter REF. Millimeter Min. Max. A 6.40 6.80 G 0.50 0.70 B 5.20 5.50 H 2.20 2.40 C 6.80 7.20 J 0.45 0.55 D 2.20 2.80 K 0 0.15 E 2.30 REF. Min. Max. L 0.90 1.50 F 0.70 0.90 M 5.40 5.80 S 0.60 0.90 R 0.80 1.20 Absolute Maximum Ratings Parameter Symbol Ratings Junction Temperature Tj -40~+125 Storage Temperature Tstg -40~+125 Typical Thermal Resistance Junction to Case R Peak Repetitive Forward Current, Tc = 125 (Rated VR, Square Wave,20 kHz) Per Diode IFRM Reverse Leakage Current @ Tj = 25 VR= 40V Reverse Leakage Current @ Tj = 125 VR=40V Forward Voltage Drop @ IF = 3.0A , Tj = 25 Forward Voltage Drop @ IF = 3.0A , Tj = 125 JC IRM VFM 6.0 Unit /W 6 A 0.3 mA 20 mA 0.55 V 0.49 V 490 A 75 A A Non-Repetitive Peak Forward Surge Current 5us Single half Sine-wave superimposed on rated load Non-Repetitive Peak Forward Surge Current 10ms Single half Sine-wave superimposed on rated load IFSM Peak Repetitive Reverse Surge Current(2us,1kHz) IRRM 1 Rectangular waveform IF 6 A RMS Reverse Voltage VR(RMS) 40 40 V Peak Repetitive Reverse Voltage VRRM V 2/3 Characteristics Curve 3/3 Important Notice: All rights are reserved. Reproduction in whole or in part is prohibited without the prior written approval of GTM. GTM reserves the right to make changes to its products without notice. GTM semiconductor products are not warranted to be suitable for use in life-support Applications, or systems. GTM assumes no liability for any consequence of customer product design, infringement of patents, or application assistance. Head Office And Factory: Taiwan: No. 17-1 Tatung Rd. Fu Kou Hsin-Chu Industrial Park, Hsin-Chu, Taiwan, R. O. C. TEL : 886-3-597-7061 FAX : 886-3-597-9220, 597-0785 China: (201203) No.255, Jang-Jiang Tsai-Lueng RD. , Pu-Dung-Hsin District, Shang-Hai City, China TEL : 86-21-58957671 FAX : 86-21-38950165