Pb Free Plating Product ISSUED DATE :2005/05/18 REVISED DATE : GE2761 BVDSS RDS(ON) ID N-CHANNEL ENHANCEMENT MODE POWER MOSFET 600/650V 1.0 10A Description The GE2761 series provide the designer with best combination of fast switching, ruggedized device design, low on-resistance and cost-effectiveness. The through-hole version (TO-220) is available for low-profile applications and suited for low voltage applications such as DC/DC converters. Features *Low On-resistance *Simple Drive Requirement *RoHS Compliant *Fast Switching Characteristic Package Dimensions REF. A b c D E L4 L5 Millimeter Min. Max. 4.40 4.80 0.76 1.00 0.36 0.50 8.60 9.00 9.80 10.4 14.7 15.3 6.20 6.60 REF. c1 b1 L e L1 Ø A1 Millimeter Min. Max. 1.25 1.45 1.17 1.47 13.25 14.25 2.54 REF. 2.60 2.89 3.71 3.96 2.60 2.80 Absolute Maximum Ratings Parameter Drain-Source Voltage - /A Gate-Source Voltage Symbol Ratings Unit VDS 600/650 V VGS 30 V Continuous Drain Current , VGS@10V ID @TC=25 10 A Continuous Drain Current , VGS@10V ID @TC=100 4.4 A 18 A 104 W Pulsed Drain Current 1 IDM PD @TC=25 Total Power Dissipation Linear Derating Factor Avalanche Current Operating Junction and Storage Temperature Range 0.8 W/ IAR 10 A Tj, Tstg -55 ~ +150 Symbol Value Thermal Data Parameter Unit Thermal Resistance Junction-case Max. Rthj-c 1.2 /W Thermal Resistance Junction-ambient Max. Rthj-a 62 /W 1/4 ISSUED DATE :2005/05/18 REVISED DATE : Electrical Characteristics(Tj = 25 Parameter Unless otherwise specified) Symbol Min. Typ. Max. Unit Test Conditions 600 - - V VGS=0, ID=250uA - 650 - - V VGS=0, ID=250uA A - 0.6 - Drain-Source Breakdown Voltage BVDSS Breakdown Voltage Temperature Coefficient BVDSS / Tj Gate Threshold Voltage VGS(th) 2.0 - 4.0 V VDS=VGS, ID=250uA gfs - 4.5 - S VDS=10V, ID=3.5A IGSS - - 100 nA VGS= - - 10 uA VDS=600V, VGS=0 - - 100 uA VDS=480V, VGS=0 RDS(ON) - - 1.0 Total Gate Charge Qg - 53 85 Gate-Source Charge Qgs - 10 - Gate-Drain (“Miller”) Change Qgd - 15 - Td(on) - 16 - Tr - 20 - Td(off) - 82 - Tf - 36 - Ciss - 2770 4430 Output Capacitance Coss - 320 - Reverse Transfer Capacitance Crss - 8 - Symbol Min. Typ. Max. Unit VSD - - 1.5 V IS=10A, VGS=0V, Tj=25 Reverse Recovery Time Trr - 610 - ns Reverse Recovery Charge Qrr - 8.64 - uC IS=10A, VGS=0V dI/dt=100A/ s Forward Transconductance Gate-Source Leakage Current Drain-Source Leakage Current(Tj=25 ) Drain-Source Leakage Current(Tj=150 ) Static Drain-Source On-Resistance 3 3 Turn-on Delay Time Rise Time Turn-off Delay Time Fall Time Input Capacitance IDSS V/ Reference to 25 , ID=1mA 30V VGS=10V, ID=3.5A nC ID=10A VDS=520V VGS=10V Ns VDD=320V ID=10A VGS=10V RG=10 RD=30 pF VGS=0V VDS=15V f=1.0MHz Source-Drain Diode Parameter Forward On Voltage3 3 Test Conditions Notes: 1. Pulse width limited by safe operating area. 2. Staring Tj=25 , VDD=50V, L=1.2mH, RG=25 , IAS=10A. 3. Pulse width 300us, duty cycle 2%. 2/4 ISSUED DATE :2005/05/18 REVISED DATE : Characteristics Curve Fig 1. Typical Output Characteristics Fig 2. Typical Output Characteristics Fig 3. Normalized BVDSS v.s. Junction Temperature Fig 4. Normalized On-Resistance v.s. Junction Temperature Fig 5. Forward Characteristics of Reverse Diode Fig 6. Gate Threshold Voltage v.s. Junction Temperature 3/4 ISSUED DATE :2005/05/18 REVISED DATE : Fig 7. Gate Charge Characteristics Fig 8. Typical Capacitance Characteristics Fig 9. Maximum Safe Operating Area Fig 10. Effective Transient Thermal Impedance Fig 11. Switching Time Waveform Fig 12. Gate Charge Waveform Important Notice: All rights are reserved. Reproduction in whole or in part is prohibited without the prior written approval of GTM. GTM reserves the right to make changes to its products without notice. GTM semiconductor products are not warranted to be suitable for use in life-support Applications, or systems. GTM assumes no liability for any consequence of customer product design, infringement of patents, or application assistance. Head Office And Factory: Taiwan: No. 17-1 Tatung Rd. Fu Kou Hsin-Chu Industrial Park, Hsin-Chu, Taiwan, R. O. C. TEL : 886-3-597-7061 FAX : 886-3-597-9220, 597-0785 China: (201203) No.255, Jang-Jiang Tsai-Lueng RD. , Pu-Dung-Hsin District, Shang-Hai City, China TEL : 86-21-5895-7671 ~ 4 FAX : 86-21-38950165 4/4