Pb Free Plating Product ISSUED DATE :2005/04/06 REVISED DATE : GJ9T 18 BVDSS RDS(ON) ID N-CHANNEL ENHANCEMENT MODE POWER MOSFET 20V 14m 38A Description The GJ9T18 provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effectiveness. Features *Capable of 2.5V gate drive *Low Gate Charge Package Dimensions TO-252 REF. A B C D E F S Millimeter Min. Max. 6.40 6.80 5.20 5.50 6.80 7.20 2.40 3.00 2.30 REF. 0.70 0.90 0.60 0.90 REF. G H J K L M R Millimeter Min. Max. 0.50 0.70 2.20 2.40 0.45 0.55 0 0.15 0.90 1.50 5.40 5.80 0.80 1.20 Absolute Maximum Ratings Parameter Symbol Ratings Unit Drain-Source Voltage VDS 20 V Gate-Source Voltage VGS ±12 V Continuous Drain Current, [email protected] ID @TC=25 38 A Continuous Drain Current, [email protected] ID @TC=100 24 A 140 A 31.3 W Pulsed Drain Current 1 IDM Total Power Dissipation PD @TC=25 Linear Derating Factor 0.25 Operating Junction and Storage Temperature Range Tj, Tstg -55 ~ +150 Symbol Value W/ Thermal Data Parameter Unit Thermal Resistance Junction-case Max. Rthj-c 4 /W Thermal Resistance Junction-ambient Max. Rthj-a 110 /W GJ9T18 Page: 1/4 ISSUED DATE :2005/04/06 REVISED DATE : Electrical Characteristics (Tj = 25 Parameter unless otherwise specified) Symbol Min. Typ. Max. Unit Drain-Source Breakdown Voltage BVDSS 20 - - V Breakdown Voltage Temperature Coefficient BVDSS / Tj - 0.1 - Gate Threshold Voltage VGS(th) 0.5 - 1.5 V VDS=VGS, ID=250uA gfs - 33 - S VDS=5V, ID=18A IGSS - - ±100 nA VGS= ±12V - - 1 uA VDS=20V, VGS=0 - - 25 uA VDS=12V, VGS=0 - - 14 - - 28 Forward Transconductance Gate-Source Leakage Current Drain-Source Leakage Current(Tj=25 ) Drain-Source Leakage Current(Tj=150 ) Static Drain-Source On-Resistance IDSS RDS(ON) V/ m Test Conditions VGS=0, ID=250uA Reference to 25 , ID=1mA VGS=4.5V, ID=18A VGS=2.5V, ID=9A Total Gate Charge2 Qg - 16 25 Gate-Source Charge Qgs - 3 - Gate-Drain (“Miller”) Change Qgd - 9 - Td(on) - 12 - Tr - 80 - Td(off) - 22 - Tf - 12 - Input Capacitance Ciss - 1115 1790 Output Capacitance Coss - 280 - Reverse Transfer Capacitance Crss - 220 - Rg - 1.54 - Symbol Min. Typ. Max. Unit VSD - - 1.3 V IS=18A, VGS=0V Reverse Recovery Time Trr - 19 - ns Reverse Recovery Charge Qrr - 11 - nC IS=18A, VGS=0V dI/dt=100A/ s Turn-on Delay Time2 Rise Time Turn-off Delay Time Fall Time Gate Resistance nC ID=18A VDS=16V VGS=4.5V ns VDS=10V ID=18A VGS=5V RG=3.3 RD=0.56 pF VGS=0V VDS=20V f=1.0MHz f=1.0MHz Source-Drain Diode Parameter 2 Forward On Voltage 2 Test Conditions Notes: 1. Pulse width limited by safe operating area. 2. Pulse width 300us, duty cycle 2%. GJ9T18 Page: 2/4 ISSUED DATE :2005/04/06 REVISED DATE : Characteristics Curve Fig 1. Typical Output Characteristics Fig 3. On-Resistance v.s. Gate Voltage Fig 5. Forward Characteristics of Reverse Diode GJ9T18 Fig 2. Typical Output Characteristics Fig 4. Normalized On-Resistance v.s. Junction Temperature Fig 6. Gate Threshold Voltage v.s. Junction Temperature Page: 3/4 ISSUED DATE :2005/04/06 REVISED DATE : Fig 7. Gate Charge Characteristics Fig 9. Maximum Safe Operating Area Fig 11. Switching Time Waveform Fig 8. Typical Capacitance Characteristics Fig 10. Effective Transient Thermal Impedance Fig 12. Gate Charge Waveform Important Notice: All rights are reserved. Reproduction in whole or in part is prohibited without the prior written approval of GTM. GTM reserves the right to make changes to its products without notice. GTM semiconductor products are not warranted to be suitable for use in life-support Applications, or systems. GTM assumes no liability for any consequence of customer product design, infringement of patents, or application assistance. Head Office And Factory: Taiwan: No. 17-1 Tatung Rd. Fu Kou Hsin-Chu Industrial Park, Hsin-Chu, Taiwan, R. O. C. TEL : 886-3-597-7061 FAX : 886-3-597-9220, 597-0785 China: (201203) No.255, Jang-Jiang Tsai-Lueng RD. , Pu-Dung-Hsin District, Shang-Hai City, China TEL : 86-21-5895-7671 ~ 4 FAX : 86-21-38950165 GJ9T18 Page: 4/4