Pb Free Plating Product ISSUED DATE :2005/08/24 REVISED DATE : GI3302 BVDSS RDS(ON) ID N-CHANNEL ENHANCEMENT MODE POWER MOSFET 25V 50m 16A Description The GI3302 provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effectiveness. The through-hole version (TO-251) is available for low-profile applications and suited for low voltage applications such as DC/DC converters. Features *Low Gate Charge *Simple Drive Requirement *Fast Switching Package Dimensions TO-251 REF. A B C D E F Millimeter Min. Max. 6.40 6.80 5.20 5.50 6.80 7.20 7.20 7.80 2.30 REF. 0.60 0.90 REF. G H J K L M Millimeter Min. Max. 0.50 0.70 2.20 2.40 0.45 0.55 0.45 0.60 0.90 1.50 5.40 5.80 Absolute Maximum Ratings Parameter Symbol Ratings Unit Drain-Source Voltage VDS 25 V Gate-Source Voltage VGS 20 V Continuous Drain Current, VGS@10V ID @TC=25 16 A Continuous Drain Current, VGS@10V ID @TC=100 10 A 25 A 20 W Pulsed Drain Current 1 IDM PD @TC=25 Total Power Dissipation Linear Derating Factor 0.16 Operating Junction and Storage Temperature Range Tj, Tstg -55 ~ +150 Symbol Value W/ Thermal Data Parameter Unit Thermal Resistance Junction-case Max. Rthj-c 6.4 /W Thermal Resistance Junction-ambient Max. Rthj-a 110 /W GI3302 Page: 1/4 ISSUED DATE :2005/08/24 REVISED DATE : Electrical Characteristics(Tj = 25 Parameter Unless otherwise specified) Symbol Min. Typ. Max. Unit Drain-Source Breakdown Voltage BVDSS 25 - - V VGS=0, ID=250uA Gate Threshold Voltage VGS(th) 2.0 - 4.0 V VDS=VGS, ID=250uA IGSS - - 100 nA VGS= - - 1 uA VDS=25V, VGS=0 - - 25 uA VDS=20V, VGS=0 RDS(ON) - - 50 Total Gate Charge2 Qg - 7.4 13 Gate-Source Charge Qgs - 2.2 - Gate-Drain (“Miller”) Change Qgd - 4.2 - Td(on) - 8 - Tr - 7.4 - Td(off) - 11 - Tf - 3 - Input Capacitance Ciss - 164 290 Output Capacitance Coss - 158 - Reverse Transfer Capacitance Crss - 62 - Symbol Min. Typ. Max. Unit VSD - - 1.3 V IS=16A, VGS=0V Reverse Recovery Time Trr - 29 - ns Reverse Recovery Charge Qrr - 21 - nC IS=16A, VGS=0V dI/dt=100A/ s Gate-Source Leakage Current Drain-Source Leakage Current(Tj=25 ) Drain-Source Leakage Current(Tj=150 ) Static Drain-Source On-Resistance2 2 Turn-on Delay Time Rise Time Turn-off Delay Time Fall Time IDSS Test Conditions 20V m VGS=10V, ID=8A nC ID=10A VDS=20V VGS=10V ns VDS=15V ID=16A VGS=10V RG=3.3 RD=0.94 pF VGS=0V VDS=25V f=1.0MHz Source-Drain Diode Parameter Forward On Voltage2 Test Conditions Notes: 1. Pulse width limited by safe operating area. 2. Pulse width 300us, duty cycle 2%. GI3302 Page: 2/4 ISSUED DATE :2005/08/24 REVISED DATE : Characteristics Curve Fig 1. Typical Output Characteristics GI3302 Fig 2. Typical Output Characteristics Fig 3. Type Power Dissipation Fig 4. Normalized On-Resistance v.s. Junction Temperature Fig 5. Forward Characteristics of Reverse Diode Fig 6. Gate Threshold Voltage v.s. Junction Temperature Page: 3/4 ISSUED DATE :2005/08/24 REVISED DATE : Fig 7. Gate Charge Characteristics Fig 9. Maximum Safe Operating Area Fig 11. Switching Time Waveform Fig 8. Typical Capacitance Characteristics Fig 10. Effective Transient Thermal Impedance Fig 12. Gate Charge Waveform Important Notice: All rights are reserved. Reproduction in whole or in part is prohibited without the prior written approval of GTM. GTM reserves the right to make changes to its products without notice. GTM semiconductor products are not warranted to be suitable for use in life-support Applications, or systems. GTM assumes no liability for any consequence of customer product design, infringement of patents, or application assistance. Head Office And Factory: Taiwan: No. 17-1 Tatung Rd. Fu Kou Hsin-Chu Industrial Park, Hsin-Chu, Taiwan, R. O. C. TEL : 886-3-597-7061 FAX : 886-3-597-9220, 597-0785 China: (201203) No.255, Jang-Jiang Tsai-Lueng RD. , Pu-Dung-Hsin District, Shang-Hai City, China TEL : 86-21-5895-7671 ~ 4 FAX : 86-21-38950165 GI3302 Page: 4/4