GTM GE75NF75

Pb Free Plating Product
ISSUED DATE :2006/09/05
REVISED DATE :
GE75NF75
BVDSS
RDS(ON)
ID
N-CHANNEL ENHANCEMENT MODE POWER MOSFET
75V
11m
80A
Description
The GE75NF75 uses advanced trench technology to provide excellent on-resistance extremely efficient and
cost-effectiveness device.
The through-hole version (TO-220) is available for low-profile applications and suited for low voltage
applications such as DC/DC converters.
Features
*High Density Cell Design for Ultra Low On-Resistance
*High power and Current handing capability
Package Dimensions
REF.
A
b
c
D
E
L4
L5
Millimeter
Min.
Max.
4.40
4.80
0.76
1.00
0.36
0.50
8.60
9.00
9.80
10.4
14.7
15.3
6.20
6.60
REF.
c1
b1
L
e
L1
Ø
A1
Millimeter
Min.
Max.
1.25
1.45
1.17
1.47
13.25
14.25
2.54 REF.
2.60
2.89
3.71
3.96
2.60
2.80
Absolute Maximum Ratings
Parameter
Symbol
Ratings
Unit
Drain-Source Voltage
VDS
75
V
Gate-Source Voltage
VGS
±25
V
Continuous Drain Current
ID @TC=25
80
A
Continuous Drain Current
ID @TC=100
56
A
200
A
268
W
Pulsed Drain Current
1
IDM
Total Power Dissipation
PD @TC=25
Linear Derating Factor
Single Pulse Avalanche Energy
1.78
2
Single Pulse Avalanche Current
Operating Junction and Storage Temperature Range
W/
EAS
350
mJ
IAS
38
A
Tj, Tstg
-55 ~ +175
Symbol
Value
Thermal Data
Parameter
Unit
Thermal Resistance Junction-case
Max.
Rthj-case
0.56
/W
Thermal Resistance Junction-ambient
Max.
Rthj-amb
60
/W
GE75NF75
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ISSUED DATE :2006/09/05
REVISED DATE :
Electrical Characteristics (Tj = 25
Parameter
unless otherwise specified)
Symbol
Min.
Typ.
Max.
Unit
Drain-Source Breakdown Voltage
BVDSS
75
-
-
V
VGS=0, ID=250uA
Gate Threshold Voltage
VGS(th)
2.0
-
4.0
V
VDS=VGS, ID=250uA
gfs
-
34
-
S
VDS=15V, ID=40A
IGSS
-
-
±100
nA
VGS= ±25V
-
-
1
uA
VDS=75, VGS=0
-
-
5
uA
VDS=60V, VGS=0
RDS(ON)
-
-
11
m
VGS=10V, ID=37.5A
Total Gate Charge3
Qg
-
114
-
Gate-Source Charge
Qgs
-
33
-
nC
Gate-Drain (“Miller”) Change
Qgd
-
18
-
ID=30A
VDS=30V
VGS=10V
Td(on)
-
21
-
Tr
-
39
-
Td(off)
-
70
-
ns
Tf
-
24
-
VDS=30V
VGS=10V
RG=3
RL=1
Ciss
-
7000
-
Output Capacitance
Coss
-
400
-
pF
Reverse Transfer Capacitance
Crss
-
87
-
VGS=0V
VDS=30V
f=1.0MHz
Symbol
Min.
Typ.
Max.
Unit
VSD
-
-
1.5
V
IS=75A, VGS=0V, Tj=25
Reverse Recovery Time
Trr
-
53
-
ns
Reverse Recovery Charge
Qrr
-
143
-
nC
IS=30A, VGS=0V
dI/dt=100A/ s
Continuous Source Current (Body Diode)
IS
-
-
80
A
Forward Transconductance
Gate-Source Leakage Current
Drain-Source Leakage Current(Tj=25 )
Drain-Source Leakage Current(Tj=55 )
3
Static Drain-Source On-Resistance
3
Turn-on Delay Time
Rise Time
Turn-off Delay Time
Fall Time
Input Capacitance
IDSS
Test Conditions
Source-Drain Diode
Parameter
3
Forward On Voltage
3
Test Conditions
VD= VG=0V, VS=1.5V
Notes: 1. Pulse width limited by safe operating area.
2. Starting Tj=25 , VDD=20V, L=0.1mH, RG=25 , IAS=20A.
3. Pulse width 300us, duty cycle 2%.
GE75NF75
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ISSUED DATE :2006/09/05
REVISED DATE :
Characteristics Curve
Fig 1. Typical Output Characteristics
Fig 2. Transfer Characteristics
Fig 3. On-Resistance v.s. Drain
Current and Gate Voltage
Fig 4. On-Resistance v.s.
Junction Temperature
100
10
1
0.1
0.01
0.001
0.0001
Fig 5. On-Resistance
v.s. Gate-Source Voltage
GE75NF75
Fig 6. Body Diode Characteristics
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ISSUED DATE :2006/09/05
REVISED DATE :
Fig 7. Maximum Safe Operating Area
Fig 9. Gate Charge Characteristics
0.56
Fig 8. Single Pulse
Avalanche Capability
Fig 10. Typical Capacitance Characteristics
/W
Fig 11. Normalized Maximum Transient Thermal Impedance
Curve
Important Notice:
All rights are reserved. Reproduction in whole or in part is prohibited without the prior written approval of GTM.
GTM reserves the right to make changes to its products without notice.
GTM semiconductor products are not warranted to be suitable for use in life-support Applications, or systems.
GTM assumes no liability for any consequence of customer product design, infringement of patents, or application assistance.
Head Office And Factory:
Taiwan: No. 17-1 Tatung Rd. Fu Kou Hsin-Chu Industrial Park, Hsin-Chu, Taiwan, R. O. C.
TEL : 886-3-597-7061 FAX : 886-3-597-9220, 597-0785
China: (201203) No.255, Jang-Jiang Tsai-Lueng RD. , Pu-Dung-Hsin District, Shang-Hai City, China
TEL : 86-21-5895-7671 ~ 4 FAX : 86-21-38950165
GE75NF75
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