Pb Free Plating Product ISSUED DATE :2006/12/07 REVISED DATE : GI494 BVDSS RDS(ON) ID N-CHANNEL ENHANCEMENT MODE POWER MOSFET 30V 11m 55A Description The GI494 uses advanced trench technology to provide excellent on-resistance and low gate charge. The through-hole version (TO-251) is available for low-profile applications and suited for use as a high side switch in SMPS and general purpose applications. Features *Simple Drive Requirement *Lower On-resistance *Fast Switching Characteristic Package Dimensions TO-251 REF. A B C D E F Millimeter Min. Max. 6.40 6.80 5.20 5.50 6.80 7.20 7.20 7.80 2.30 REF. 0.60 0.90 REF. G H J K L M Millimeter Min. Max. 0.50 0.70 2.20 2.40 0.45 0.55 0.45 0.60 0.90 1.50 5.40 5.80 Absolute Maximum Ratings Parameter Symbol Ratings Unit Drain-Source Voltage VDS 30 V Gate-Source Voltage VGS ±12 V Continuous Drain Current, VGS@10V ID @TC=25 55 A Continuous Drain Current, VGS@10V ID @TC=100 39 A 120 A 63 W Pulsed Drain Current 1 IDM Total Power Dissipation PD @TC=25 Linear Derating Factor 0.42 Operating Junction and Storage Temperature Range Tj, Tstg -55 ~ +175 Symbol Value W/ Thermal Data Parameter Unit Thermal Resistance Junction-case Max. Rthj-c 2.4 /W Thermal Resistance Junction-ambient Max. Rthj-a 50 /W GI494 Page: 1/4 ISSUED DATE :2006/12/07 REVISED DATE : Electrical Characteristics (Tj = 25 Parameter unless otherwise specified) Symbol Min. Typ. Max. Unit Drain-Source Breakdown Voltage BVDSS 30 - - V VGS=0, ID=250uA Gate Threshold Voltage VGS(th) 1.0 - 2.5 V VDS=VGS, ID=250uA gfs - 40 - S VDS=5V, ID=20A IGSS - - ±100 nA VGS= ±12V - - 1 uA VDS=30V, VGS=0 - - 25 uA VDS=24V, VGS=0 - - 11 - - 13.5 Forward Transconductance Gate-Source Leakage Current Drain-Source Leakage Current(Tj=25 ) Drain-Source Leakage Current(Tj=55 ) Static Drain-Source On-Resistance2 IDSS RDS(ON) m Test Conditions VGS=10V, ID=20A VGS=4.5V, ID=20A Total Gate Charge2 Qg - 22 28 Gate-Source Charge Qgs - 3.7 - Gate-Drain (“Miller”) Change Qgd - 2.7 - Td(on) - 10 - Tr - 6.3 - Td(off) - 21 - Tf - 2.8 - Input Capacitance Ciss - 1210 1452 Output Capacitance Coss - 330 - Reverse Transfer Capacitance Crss - 85 - Symbol Min. Typ. Max. Unit VSD - - 1.0 V IS=1A, VGS=0V IS - - 55 A VD= VG=0V, VS=1.0V Reverse Recovery Time Trr - 36 - ns Reverse Recovery Charge Qrr - 47 - nC IS=20A, VGS=0V dI/dt=100A/ s Turn-on Delay Time2 Rise Time Turn-off Delay Time Fall Time nC ID=20A VDS=15V VGS=10V ns VDS=15V VGS=10V RG=3 RL=0.75 pF VGS=0V VDS=15V f=1.0MHz Source-Drain Diode Parameter Forward On Voltage2 Continuous Source Current (Body Diode) 2 Test Conditions Notes: 1. Pulse width limited by safe operating area. 2. Pulse width 300us, duty cycle 2%. GI494 Page: 2/4 ISSUED DATE :2006/12/07 REVISED DATE : Characteristics Curve Fig 1. Typical Output Characteristics Fig 2. Transfer Characteristics Fig 3. On-Resistance v.s. Drain Current and Gate Voltage Fig 4. On-Resistance v.s. Junction Temperature 100 10 1 0.1 0.01 0.001 0.0001 0.00001 Fig 5. On-Resistance v.s. Gate-Source Voltage GI494 Fig 6. Body Diode Characteristics Page: 3/4 ISSUED DATE :2006/12/07 REVISED DATE : Fig 7. Maximum Safe Operating Area Fig 9. Gate Charge Characteristics 0.00001 0.0001 0.001 0.01 Fig 8. Single Pulse Power Rating Junction-to-Ambient Fig 10. Typical Capacitance Characteristics 0.1 1 10 100 Fig 11. Normalized Maximum Transient Thermal Impedance Important Notice: All rights are reserved. Reproduction in whole or in part is prohibited without the prior written approval of GTM. GTM reserves the right to make changes to its products without notice. GTM semiconductor products are not warranted to be suitable for use in life-support Applications, or systems. GTM assumes no liability for any consequence of customer product design, infringement of patents, or application assistance. Head Office And Factory: Taiwan: No. 17-1 Tatung Rd. Fu Kou Hsin-Chu Industrial Park, Hsin-Chu, Taiwan, R. O. C. TEL : 886-3-597-7061 FAX : 886-3-597-9220, 597-0785 China: (201203) No.255, Jang-Jiang Tsai-Lueng RD. , Pu-Dung-Hsin District, Shang-Hai City, China TEL : 86-21-5895-7671 ~ 4 FAX : 86-21-38950165 GI494 Page: 4/4