Pb Free Plating Product ISSUED DATE :2005/06/27 REVISED DATE : GJ09N20 BVDSS RDS(ON) ID N-CHANNEL ENHANCEMENT MODE POWER MOSFET 200V 380m 8.6A Description The GJ09N20 provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effectiveness. The TO-252 package is universally preferred for all commercial-industrial surface mount applications at power dissipation levels to approximately 50 watts. Features *Simple Drive Requirement *Lower On-resistance *Fast Switching Characteristic Package Dimensions TO-252 REF. A B C D E F S Millimeter Min. Max. 6.40 6.80 5.20 5.50 6.80 7.20 2.40 3.00 2.30 REF. 0.70 0.90 0.60 0.90 REF. G H J K L M R Millimeter Min. Max. 0.50 0.70 2.20 2.40 0.45 0.55 0 0.15 0.90 1.50 5.40 5.80 0.80 1.20 Absolute Maximum Ratings Parameter Symbol Ratings Unit Drain-Source Voltage VDS 200 V Gate-Source Voltage VGS ±30 V Continuous Drain Current, VGS@10V ID @TC=25 8.6 A Continuous Drain Current, VGS@10V ID @TC=100 5.5 A 36 A 69 W Pulsed Drain Current 1 IDM Total Power Dissipation PD @TC=25 Linear Derating Factor Single Pulse Avalanche Energy 0.55 2 Avalanche Current Operating Junction and Storage Temperature Range W/ EAS 40 mJ IAR 8.6 A Tj, Tstg -55 ~ +150 Symbol Value Thermal Data Parameter Unit Thermal Resistance Junction-case Max. Rthj-c 1.8 /W Thermal Resistance Junction-ambient Max. Rthj-a 110 /W GJ09N20 Page: 1/4 ISSUED DATE :2005/06/27 REVISED DATE : Electrical Characteristics (Tj = 25 Parameter unless otherwise specified) Symbol Min. Typ. Max. Unit Drain-Source Breakdown Voltage BVDSS 200 - - V Breakdown Voltage Temperature Coefficient BVDSS / Tj - 0.24 - Gate Threshold Voltage VGS(th) 2.0 - 4.0 V VDS=VGS, ID=250uA gfs - 3.7 - S VDS=10V, ID=5A IGSS - - ±100 nA VGS= ±30V - - 10 uA VDS=200V, VGS=0 - - 100 uA VDS=160V, VGS=0 RDS(ON) - - 380 m VGS=10V, ID=5A Qg - 23 37 Gate-Source Charge Qgs - 4 - nC Gate-Drain (“Miller”) Change Qgd - 13 - ID=8.6A VDS=160V VGS=10V Td(on) - 12 - Tr - 25 - Td(off) - 36 - ns Tf - 16 - VDD=100V ID=8.6A VGS=10V RG=10 RD=11.6 Input Capacitance Ciss - 500 800 Output Capacitance Coss - 90 - pF Reverse Transfer Capacitance Crss - 40 - VGS=0V VDS=25V f=1.0MHz Symbol Min. Typ. Max. Unit VSD - - 1.3 V IS=8.6A, VGS=0V Reverse Recovery Time Trr - 225 - ns Reverse Recovery Charge Qrr - 2260 - nC IS=8.6A, VGS=0V dI/dt=100A/ s Forward Transconductance Gate-Source Leakage Current Drain-Source Leakage Current(Tj=25 ) Drain-Source Leakage Current(Tj=150 ) Static Drain-Source On-Resistance 3 Total Gate Charge Turn-on Delay Time3 Rise Time Turn-off Delay Time Fall Time IDSS V/ Test Conditions VGS=0, ID=1mA Reference to 25 , ID=1mA Source-Drain Diode Parameter Forward On Voltage3 Test Conditions Notes: 1. Pulse width limited by safe operating area. 2. Staring Tj=25 , VDD=50V, L=1mH, RG=25 , IAS=8.6A. 3. Pulse width 300us, duty cycle 2%. GJ09N20 Page: 2/4 ISSUED DATE :2005/06/27 REVISED DATE : Characteristics Curve Fig 1. Typical Output Characteristics Fig 3. Normalized BVDSS v.s. Junction Temperature Fig 5. Forward Characteristics of Reverse Diode GJ09N20 Fig 2. Typical Output Characteristics Fig 4. Normalized On-Resistance v.s. Junction Temperature Fig 6. Gate Threshold Voltage v.s. Junction Temperature Page: 3/4 ISSUED DATE :2005/06/27 REVISED DATE : Fig 7. Gate Charge Characteristics Fig 9. Maximum Safe Operating Area Fig 11. Switching Time Waveform Fig 8. Typical Capacitance Characteristics Fig 10. Effective Transient Thermal Impedance Fig 12. Gate Charge Waveform Important Notice: All rights are reserved. Reproduction in whole or in part is prohibited without the prior written approval of GTM. GTM reserves the right to make changes to its products without notice. GTM semiconductor products are not warranted to be suitable for use in life-support Applications, or systems. GTM assumes no liability for any consequence of customer product design, infringement of patents, or application assistance. Head Office And Factory: Taiwan: No. 17-1 Tatung Rd. Fu Kou Hsin-Chu Industrial Park, Hsin-Chu, Taiwan, R. O. C. TEL : 886-3-597-7061 FAX : 886-3-597-9220, 597-0785 China: (201203) No.255, Jang-Jiang Tsai-Lueng RD. , Pu-Dung-Hsin District, Shang-Hai City, China TEL : 86-21-5895-7671 ~ 4 FAX : 86-21-38950165 GJ09N20 Page: 4/4