Pb Free Plating Product ISSUED DATE :2005/03/08 REVISED DATE : GE85T08 BVDSS RDS(ON) ID N-CHANNEL ENHANCEMENT MODE POWER MOSFET 80V 13m 75A Description The GE85T08 provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effectiveness. The through-hole version (TO-220) is available for low-profile applications and suited for low voltage applications such as DC/DC converters. Features *Simple Drive Requirement *Lower On-resistance *Fast Switching Package Dimensions REF. A b c D E L4 L5 Millimeter Min. Max. 4.40 4.80 0.76 1.00 0.36 0.50 8.60 9.00 9.80 10.4 14.7 15.3 6.20 6.60 REF. c1 b1 L e L1 Ø A1 Millimeter Min. Max. 1.25 1.45 1.17 1.47 13.25 14.25 2.54 REF. 2.60 2.89 3.71 3.96 2.60 2.80 Absolute Maximum Ratings Parameter Symbol Ratings Unit Drain-Source Voltage VDS 80 V Gate-Source Voltage VGS 20 V Continuous Drain Current, VGS@10V ID @TC=25 75 A Continuous Drain Current, VGS@10V ID @TC=100 48 A 260 A 138 W Pulsed Drain Current 1 IDM PD @TC=25 Total Power Dissipation Linear Derating Factor Single Pulse Avalanche Energy 1.11 3 Avalanche Current Operating Junction and Storage Temperature Range W/ EAS 450 mJ IAR 30 A Tj, Tstg -55 ~ +150 Symbol Value Thermal Data Parameter Unit Thermal Resistance Junction-case Max. Rthj-c 0.9 /W Thermal Resistance Junction-ambient Max. Rthj-a 62 /W GE85T08 Page: 1/4 ISSUED DATE :2005/03/08 REVISED DATE : Electrical Characteristics(Tj = 25 Parameter Unless otherwise specified) Symbol Min. Typ. Max. Unit Drain-Source Breakdown Voltage BVDSS 80 - - V Breakdown Voltage Temperature Coefficient BVDSS / Tj - 0.09 - Gate Threshold Voltage VGS(th) 1.0 - 3.0 V VDS=VGS, ID=250uA gfs - 70 - S VDS=10V, ID=45A IGSS - - 100 nA VGS= - - 10 uA VDS=80V, VGS=0 - - 100 uA VDS=64V, VGS=0 - - 13 - - 18 Qg - 63 100 Gate-Source Charge Qgs - 23 - Gate-Drain (“Miller”) Change Qgd - 38 - Td(on) - 30 - Tr - 100 - Td(off) - 144 - Tf - 173 - Input Capacitance Ciss - 6300 10080 Output Capacitance Coss - 670 - Reverse Transfer Capacitance Crss - 350 - Rg - 1.1 1.7 Symbol Min. Typ. Max. Unit VSD - - 1.3 V IS=45A, VGS=0V Reverse Recovery Time Trr - 47 - ns Reverse Recovery Charge Qrr - 86 - nC IS=20A, VGS=0V dI/dt=100A/ s Forward Transconductance Gate-Source Leakage Current Drain-Source Leakage Current(Tj=25 ) Drain-Source Leakage Current(Tj=150 ) 2 Static Drain-Source On-Resistance 2 Total Gate Charge Turn-on Delay Time2 Rise Time Turn-off Delay Time Fall Time Gate Resistance IDSS RDS(ON) V/ m Test Conditions VGS=0, ID=1mA Reference to 25 , ID=1mA 20V VGS=10V, ID=45A VGS=4.5V, ID=25A nC ID=45A VDS=64V VGS=4.5V ns VDS=40V ID=45A VGS=10V RG=10 RD=0.89 pF VGS=0V VDS=25V f=1.0MHz f=1.0MHz Source-Drain Diode Parameter Forward On Voltage2 2 Test Conditions Notes: 1. Pulse width limited by safe operating area. 2. Pulse width 300us, duty cycle 2%. 3. Staring Tj=25 , VDD=30V, L=1mH, RG=25 , IAS=30A. GE85T08 Page: 2/4 ISSUED DATE :2005/03/08 REVISED DATE : Characteristics Curve Fig 1. Typical Output Characteristics Fig 3. On-Resistance v.s. Gate Voltage Fig 5. Forward Characteristics of Reverse Diode GE85T08 Fig 2. Typical Output Characteristics Fig 4. Normalized On-Resistance v.s. Junction Temperature Fig 6. Gate Threshold Voltage v.s. Junction Temperature Page: 3/4 ISSUED DATE :2005/03/08 REVISED DATE : Fig 7. Gate Charge Characteristics Fig 9. Maximum Safe Operating Area Fig 11. Transfer Characteristics Fig 8. Typical Capacitance Characteristics Fig 10. Effective Transient Thermal Impedance Fig 12. Gate Charge Waveform Important Notice: All rights are reserved. Reproduction in whole or in part is prohibited without the prior written approval of GTM. GTM reserves the right to make changes to its products without notice. GTM semiconductor products are not warranted to be suitable for use in life-support Applications, or systems. GTM assumes no liability for any consequence of customer product design, infringement of patents, or application assistance. Head Office And Factory: Taiwan: No. 17-1 Tatung Rd. Fu Kou Hsin-Chu Industrial Park, Hsin-Chu, Taiwan, R. O. C. TEL : 886-3-597-7061 FAX : 886-3-597-9220, 597-0785 China: (201203) No.255, Jang-Jiang Tsai-Lueng RD. , Pu-Dung-Hsin District, Shang-Hai City, China TEL : 86-21-5895-7671 ~ 4 FAX : 86-21-38950165 GE85T08 Page: 4/4