Pb Free Plating Product ISSUED DATE :2006/08/16 REVISED DATE : GJ75N03 BVDSS RDS(ON) ID N-CHANNEL ENHANCEMENT MODE POWER MOSFET 25V 4.5m 75A Description The GJ75N03 used advanced design and process to achieve low gate charge, low on-resistance and fast switching performance. The TO-252 package is universally preferred for all commercial-industrial surface mount applications and suited for low voltage applications such as DC/DC converters. Features *Low Gate Charge *Simple Drive Requirement *Fast Switching Package Dimensions TO-252 REF. A B C D E F S Millimeter Min. Max. 6.40 6.80 5.20 5.50 6.80 7.20 2.40 3.00 2.30 REF. 0.70 0.90 0.60 0.90 REF. G H J K L M R Millimeter Min. Max. 0.50 0.70 2.20 2.40 0.45 0.55 0 0.15 0.90 1.50 5.40 5.80 0.80 1.20 Absolute Maximum Ratings Parameter Symbol Ratings Unit Drain-Source Voltage VDS 25 V Gate-Source Voltage VGS ±20 V Continuous Drain Current, [email protected] ID @TC=25 75 A Continuous Drain Current, [email protected] ID @TC=100 62.5 A 350 A 96 W Pulsed Drain Current 1 IDM Total Power Dissipation PD @TC=25 Linear Derating Factor Single Pulse Avalanche Energy 0.75 2 Single Pulse Avalanche Current Operating Junction and Storage Temperature Range W/ EAS 400 mJ IAS 40 A Tj, Tstg -55 ~ +150 Symbol Value Thermal Data Parameter Unit Thermal Resistance Junction-case Max. Rthj-case 1.3 /W Thermal Resistance Junction-ambient Max. Rthj-amb 110 /W GJ75N03 Page: 1/4 ISSUED DATE :2006/08/16 REVISED DATE : Electrical Characteristics (Tj = 25 Parameter unless otherwise specified) Symbol Min. Typ. Max. Unit Drain-Source Breakdown Voltage BVDSS 25 - - V Breakdown Voltage Temperature Coefficient BVDSS / Tj - 0.02 - Gate Threshold Voltage VGS(th) 1.0 - 3.0 V VDS=VGS, ID=250uA gfs - 29 - S VDS=10V, ID=30A IGSS - - ±100 nA VGS= ±20V - - 1 uA VDS=25V, VGS=0 - - 25 uA VDS=20V, VGS=0 - 3.7 4.5 - 6.0 7 Forward Transconductance Gate-Source Leakage Current Drain-Source Leakage Current(Tj=25 ) Drain-Source Leakage Current(Tj=150 ) Static Drain-Source On-Resistance3 IDSS RDS(ON) V/ m Test Conditions VGS=0, ID=250uA Reference to 25 , ID=1mA VGS=10V, ID=40A VGS=4.5V, ID=30A Total Gate Charge3 Qg - 33 - Gate-Source Charge Qgs - 9 - Gate-Drain (“Miller”) Change Qgd - 15 - Td(on) - 10 - Tr - 80 - Td(off) - 37 - Tf - 85 - Input Capacitance Ciss - 2070 - Output Capacitance Coss - 990 - Reverse Transfer Capacitance Crss - 300 - Symbol Min. Typ. Max. Unit VSD - - 1.5 V IS=20A, VGS=0V Reverse Recovery Time Trr - 50 - ns Reverse Recovery Charge Qrr - 51 - nC IS=30A, VGS=0V dI/dt=100A/ s Turn-on Delay Time3 Rise Time Turn-off Delay Time Fall Time nC ID=30A VDS=20V VGS=4.5V ns VDS=15V ID=30A VGS=10V RG=3.3 RD=0.5 pF VGS=0V VDS=25V f=1.0MHz Source-Drain Diode Parameter 3 Forward On Voltage 3 Test Conditions Notes: 1. Pulse width limited by safe operating area. 2. Staring Tj=25 , VDD=20V, L=0.1mH, RG=25 , IAS=10A. 3. Pulse width 300us, duty cycle 2%. GJ75N03 Page: 2/4 ISSUED DATE :2006/08/16 REVISED DATE : Characteristics Curve Fig 1. Typical Output Characteristics Fig 2. Typical Output Characteristics 6.4 5.6 4.8 4.0 3.2 Fig 3. On-Resistance v.s. Gate Voltage Fig 5. Forward Characteristics of Reverse Diode GJ75N03 Fig 4. Normalized On-Resistance v.s. Junction Temperature Fig 6. Gate Threshold Voltage v.s. Junction Temperature Page: 3/4 ISSUED DATE :2006/08/16 REVISED DATE : 12 15 20 Fig 7. Gate Charge Characteristics Fig 9. Maximum Safe Operating Area Fig 11. Switching Time Waveform Fig 8. Typical Capacitance Characteristics Fig 10. Effective Transient Thermal Impedance Fig 12. Gate Charge Waveform Important Notice: All rights are reserved. Reproduction in whole or in part is prohibited without the prior written approval of GTM. GTM reserves the right to make changes to its products without notice. GTM semiconductor products are not warranted to be suitable for use in life-support Applications, or systems. GTM assumes no liability for any consequence of customer product design, infringement of patents, or application assistance. Head Office And Factory: Taiwan: No. 17-1 Tatung Rd. Fu Kou Hsin-Chu Industrial Park, Hsin-Chu, Taiwan, R. O. C. TEL : 886-3-597-7061 FAX : 886-3-597-9220, 597-0785 China: (201203) No.255, Jang-Jiang Tsai-Lueng RD. , Pu-Dung-Hsin District, Shang-Hai City, China TEL : 86-21-5895-7671 ~ 4 FAX : 86-21-38950165 GJ75N03 Page: 4/4