GTM GU75N07

Pb Free Plating Product
ISSUED DATE :2006/06/06
REVISED DATE :
GU75N07
BVDSS
RDS(ON)
ID
N-CHANNEL ENHANCEMENT MODE POWER MOSFET
75V
11m
80A
Description
The GU75N07 provide the designer with the best combination of fast switching, ruggedized device design, low
on-resistance and cost-effectiveness.
The TO-263 package is universally preferred for all commercial-industrial surface mount applications and
suited for low voltage applications such as DC/DC converters.
Features
*Low Gate Charge
*Simple Drive Requirement
*Fast Switching Characteristics
*RoHS Compliant
Package Dimensions
REF.
A
b
L4
c
L3
L1
E
Millimeter
REF.
Min.
Max.
4.40
4.80
c2
0.76
1.00
b2
0.00
0.30 B D
0.36
0.5
e
1.50 REF.
L
2.29
2.79
9.80
10.4
L2
Millimeter
Min.
Max.
1.25
1.45
1.17
1.47
8.6
9.0
2.54 REF.
14.6
15.8
0˚
8˚
1.27 REF.
Absolute Maximum Ratings
Parameter
Symbol
Ratings
Unit
Drain-Source Voltage
VDS
75
V
Gate-Source Voltage
VGS
±20
V
Continuous Drain Current, VGS@10V
ID @TC=25
80
A
Continuous Drain Current, VGS@10V
ID @TC=100
56
A
300
A
156
W
Pulsed Drain Current
1
IDM
Total Power Dissipation
PD @TC=25
Linear Derating Factor
Single Pulse Avalanche Energy
0.125
3
Operating Junction and Storage Temperature Range
EAS
450
Tj, Tstg
-55 ~ +150
Symbol
Value
W/
mJ
Thermal Data
Parameter
Unit
Thermal Resistance Junction-case
Max.
Rthj-case
0.8
/W
Thermal Resistance Junction-ambient
Max.
Rthj-amb
62
/W
GU75N07
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ISSUED DATE :2006/06/06
REVISED DATE :
Electrical Characteristics (Tj = 25
Parameter
unless otherwise specified)
Symbol
Min.
Typ.
Max.
Unit
Drain-Source Breakdown Voltage
BVDSS
75
-
-
V
Breakdown Voltage Temperature Coefficient
BVDSS / Tj
-
0.08
-
Gate Threshold Voltage
VGS(th)
1.0
-
3.0
V
VDS=VGS, ID=250uA
gfs
-
40
-
S
VDS=10V, ID=40A
IGSS
-
-
±100
nA
VGS= ±20V
-
-
10
uA
VDS=60, VGS=0
-
-
100
uA
VDS=75V, VGS=0
RDS(ON)
-
-
11
m
VGS=10V, ID=40A
Total Gate Charge
Qg
-
83
130
Gate-Source Charge
Qgs
-
10
-
nC
Gate-Drain (“Miller”) Change
Qgd
-
51
-
ID=40A
VDS=60V
VGS=4.5V
Td(on)
-
15
-
Tr
-
73
-
Td(off)
-
340
-
ns
Tf
-
200
-
VDS=40V
ID=30A
VGS=10V
RG=10
RD=1.33
Ciss
-
4270
6830
Output Capacitance
Coss
-
690
-
pF
Reverse Transfer Capacitance
Crss
-
320
-
VGS=0V
VDS=25V
f=1.0MHz
Rg
-
1.8
2.7
Symbol
Min.
Typ.
Max.
Unit
VSD
-
-
1.5
V
IS=40A, VGS=0V, Tj=25
Reverse Recovery Time
Trr
-
90
-
ns
Reverse Recovery Charge
Qrr
-
235
-
nC
IS=40A, VGS=0V
dI/dt=100A/ s
Forward Transconductance
Gate-Source Leakage Current
Drain-Source Leakage Current(Tj=25 )
Drain-Source Leakage Current(Tj=150 )
Static Drain-Source On-Resistance
2
2
Turn-on Delay Time
Rise Time
Turn-off Delay Time
Fall Time
Input Capacitance
Gate Resistance
IDSS
V/
Test Conditions
VGS=0, ID=1mA
Reference to 25 , ID=1mA
f=1.0MHz
Source-Drain Diode
Parameter
Forward On Voltage2
Test Conditions
Notes: 1. Pulse width limited by safe operating area.
2. Pulse width 300us, duty cycle 2%.
3. Starting Tj=25 , VDD=50V, L=1mH, RG=25 , IAS=30A.
GU75N07
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ISSUED DATE :2006/06/06
REVISED DATE :
Characteristics Curve
Fig 1. Typical Output Characteristics
Fig 3. On-Resistance v.s. Gate Voltage
Fig 5. Forward Characteristics of
Reverse Diode
GU75N07
Fig 2. Typical Output Characteristics
Fig 4. Normalized On-Resistance
v.s. Junction Temperature
Fig 6. On-Resistance
v.s. Drain Current
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ISSUED DATE :2006/06/06
REVISED DATE :
Fig 7. Gate Charge Characteristics
Fig 9. Maximum Safe Operating Area
Fig 11. Transfer Characteristics
Fig 8. Typical Capacitance Characteristics
Fig 10. Effective Transient Thermal Impedance
Fig 12. Gate Charge Waveform
Important Notice:
All rights are reserved. Reproduction in whole or in part is prohibited without the prior written approval of GTM.
GTM reserves the right to make changes to its products without notice.
GTM semiconductor products are not warranted to be suitable for use in life-support Applications, or systems.
GTM assumes no liability for any consequence of customer product design, infringement of patents, or application assistance.
Head Office And Factory:
Taiwan: No. 17-1 Tatung Rd. Fu Kou Hsin-Chu Industrial Park, Hsin-Chu, Taiwan, R. O. C.
TEL : 886-3-597-7061 FAX : 886-3-597-9220, 597-0785
China: (201203) No.255, Jang-Jiang Tsai-Lueng RD. , Pu-Dung-Hsin District, Shang-Hai City, China
TEL : 86-21-5895-7671 ~ 4 FAX : 86-21-38950165
GU75N07
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