GTM GMBT2907A

CORPORATION
G M BT 2 9 0 7 A
ISSUED DATE :2003/06/02
REVISED DATE :2005/06/27B
P NP E PITAX I AL PL ANAR T RANSI STOR
Description
The GMBT2907A is designed for general purpose amplifier and high speed, medium-power switching applications.
Features
Low collector saturation voltage
High speed switching
For complementary use with NPN type GMBT2222A
Package Dimensions
REF.
A
B
C
D
E
F
Millimeter
Min.
Max.
2.70
3.10
2.40
2.80
1.40
1.60
0.35
0.50
0
0.10
0.45
0.55
REF.
G
H
K
J
L
M
Millimeter
Min.
Max.
1.90 REF.
1.00
1.30
0.10
0.20
0.40
0.85
1.15
0
10
Absolute Maximum Ratings at Ta = 25
Parameter
Junction Temperature
Symbol
Ratings
Tj
+150
Unit
Storage Temperature
Collector to Base Voltage at Ta=25
Tstg
-55 ~ +150
VCBO
-60
V
Collector to Emitter Voltage at Ta=25
VCEO
-60
V
Emitter to Base Voltage at Ta=25
VEBO
-5
V
Collector Current at Ta=25
IC
-600
mA
Total Power Dissipation at Ta=25
PD
225
mW
Characteristics
Symbol
at Ta = 25
Min.
Typ.
Max.
Unit
BVCBO
-60
-
-
V
BVCEO
-60
-
-
V
IC=-10mA, IB=0
BVEBO
-5
-
-
V
IE=-10uA, IC=0
ICBO
-
-
-10
nA
VCE=-50V, IE=0
ICEX
-
-
-50
nA
VCE=-30V, V BE(OFF)=-0.5V
*VCE(sat)1
-
-0.2
-0.4
V
IC=-150mA, IB=-15mA
*VCE(sat)2
-
-0.5
-1.6
V
IC=-500mA, IB=-50mA
*VBE(sat)1
-
-
-1.3
mV
IC=-150mA, IB=-15mA
*VBE(sat)2
-
-
-2.6
V
IC=-500mA, IB=-50mA
*hFE1
75
-
-
VCE=-10V, IC =-0.1mA
*hFE2
100
-
-
VCE=-10V, IC =-1mA
*hFE3
100
-
-
VCE=-10V, IC =-10mA
*hFE4
100
180
300
VCE=-10V, IC =-150mA
*hFE5
50
-
-
VCE=-10V, IC =-500mA
fT
200
-
-
MHz
-
-
8.0
pF
Cob
Test Conditions
IC=-10uA, IE=0
VCE=-20V, IC =-50mA, f=100MHz
VCE=-10V, IE=0, f=1MHz
* Pulse Test: Pulse Width
380 s, Duty Cycle
2%
1/4
CORPORATION
ISSUED DATE :2003/06/02
REVISED DATE :2005/06/27B
Switching Characteristics
Symbol
Min.
Typ.
Max.
Unit
ton (Turn-On Time)
-
-
45
ns
td (Delay Time)
-
-
10
ns
tr (Rise Time)
-
-
40
ns
toff (Turn-Off Time)
-
-
100
ns
ts (Storage Time)
-
-
80
ns
tf (Fall Time)
-
-
30
ns
Test Conditions
VCC=-30V, IC=-150mA,
IB1=-15mA
VCC=-6V, IC=-150mA,
IB1=IB2=-15mA
Switching Time Equivalent Test Circuits
Delay and Rise Time Test Circuit
Storage and Fall Time Test Circuit
Characteristics Curve
Fig 1. DC Current Gain
Fig 2. Collector saturation Region
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CORPORATION
ISSUED DATE :2003/06/02
REVISED DATE :2005/06/27B
Fig 3. Turn-On Time
Fig 4. Turn-Off Time
Fig 5. Frequency Effects
Fig 6. Source Resistance Effects
Fig 7. Capacitance
Fig 8. Current-Gain Bandwidth Product
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CORPORATION
Fig 9. “On” Voltage
ISSUED DATE :2003/06/02
REVISED DATE :2005/06/27B
Fig 10. Temperature Coefficients
Important Notice:
All rights are reserved. Reproduction in whole or in part is prohibited without the prior written approval of GTM.
GTM reserves the right to make changes to its products without notice.
GTM semiconductor products are not warranted to be suitable for use in life-support Applications, or systems.
GTM assumes no liability for any consequence of customer product design, infringement of patents, or application assistance.
Head Office And Factory:
Taiwan: No. 17-1 Tatung Rd. Fu Kou Hsin-Chu Industrial Park, Hsin-Chu, Taiwan, R. O. C.
TEL : 886-3-597-7061 FAX : 886-3-597-9220, 597-0785
China: (201203) No.255, Jang-Jiang Tsai-Lueng RD. , Pu-Dung-Hsin District, Shang-Hai City, China
TEL : 86-21-5895-7671 ~ 4 FAX : 86-21-38950165
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