CORPORATION G M BT 2 9 0 7 A ISSUED DATE :2003/06/02 REVISED DATE :2005/06/27B P NP E PITAX I AL PL ANAR T RANSI STOR Description The GMBT2907A is designed for general purpose amplifier and high speed, medium-power switching applications. Features Low collector saturation voltage High speed switching For complementary use with NPN type GMBT2222A Package Dimensions REF. A B C D E F Millimeter Min. Max. 2.70 3.10 2.40 2.80 1.40 1.60 0.35 0.50 0 0.10 0.45 0.55 REF. G H K J L M Millimeter Min. Max. 1.90 REF. 1.00 1.30 0.10 0.20 0.40 0.85 1.15 0 10 Absolute Maximum Ratings at Ta = 25 Parameter Junction Temperature Symbol Ratings Tj +150 Unit Storage Temperature Collector to Base Voltage at Ta=25 Tstg -55 ~ +150 VCBO -60 V Collector to Emitter Voltage at Ta=25 VCEO -60 V Emitter to Base Voltage at Ta=25 VEBO -5 V Collector Current at Ta=25 IC -600 mA Total Power Dissipation at Ta=25 PD 225 mW Characteristics Symbol at Ta = 25 Min. Typ. Max. Unit BVCBO -60 - - V BVCEO -60 - - V IC=-10mA, IB=0 BVEBO -5 - - V IE=-10uA, IC=0 ICBO - - -10 nA VCE=-50V, IE=0 ICEX - - -50 nA VCE=-30V, V BE(OFF)=-0.5V *VCE(sat)1 - -0.2 -0.4 V IC=-150mA, IB=-15mA *VCE(sat)2 - -0.5 -1.6 V IC=-500mA, IB=-50mA *VBE(sat)1 - - -1.3 mV IC=-150mA, IB=-15mA *VBE(sat)2 - - -2.6 V IC=-500mA, IB=-50mA *hFE1 75 - - VCE=-10V, IC =-0.1mA *hFE2 100 - - VCE=-10V, IC =-1mA *hFE3 100 - - VCE=-10V, IC =-10mA *hFE4 100 180 300 VCE=-10V, IC =-150mA *hFE5 50 - - VCE=-10V, IC =-500mA fT 200 - - MHz - - 8.0 pF Cob Test Conditions IC=-10uA, IE=0 VCE=-20V, IC =-50mA, f=100MHz VCE=-10V, IE=0, f=1MHz * Pulse Test: Pulse Width 380 s, Duty Cycle 2% 1/4 CORPORATION ISSUED DATE :2003/06/02 REVISED DATE :2005/06/27B Switching Characteristics Symbol Min. Typ. Max. Unit ton (Turn-On Time) - - 45 ns td (Delay Time) - - 10 ns tr (Rise Time) - - 40 ns toff (Turn-Off Time) - - 100 ns ts (Storage Time) - - 80 ns tf (Fall Time) - - 30 ns Test Conditions VCC=-30V, IC=-150mA, IB1=-15mA VCC=-6V, IC=-150mA, IB1=IB2=-15mA Switching Time Equivalent Test Circuits Delay and Rise Time Test Circuit Storage and Fall Time Test Circuit Characteristics Curve Fig 1. DC Current Gain Fig 2. Collector saturation Region 2/4 CORPORATION ISSUED DATE :2003/06/02 REVISED DATE :2005/06/27B Fig 3. Turn-On Time Fig 4. Turn-Off Time Fig 5. Frequency Effects Fig 6. Source Resistance Effects Fig 7. Capacitance Fig 8. Current-Gain Bandwidth Product 3/4 CORPORATION Fig 9. “On” Voltage ISSUED DATE :2003/06/02 REVISED DATE :2005/06/27B Fig 10. Temperature Coefficients Important Notice: All rights are reserved. Reproduction in whole or in part is prohibited without the prior written approval of GTM. GTM reserves the right to make changes to its products without notice. GTM semiconductor products are not warranted to be suitable for use in life-support Applications, or systems. GTM assumes no liability for any consequence of customer product design, infringement of patents, or application assistance. Head Office And Factory: Taiwan: No. 17-1 Tatung Rd. Fu Kou Hsin-Chu Industrial Park, Hsin-Chu, Taiwan, R. O. C. TEL : 886-3-597-7061 FAX : 886-3-597-9220, 597-0785 China: (201203) No.255, Jang-Jiang Tsai-Lueng RD. , Pu-Dung-Hsin District, Shang-Hai City, China TEL : 86-21-5895-7671 ~ 4 FAX : 86-21-38950165 4/4