CORPORATION G M BT 2 2 2 2 A ISSUED DATE :2001/03/12 REVISED DATE :2005/06/27B NPN E PITAX I AL PL ANAR T RANSI STOR Description The GMBT2222A is designed for general purpose amplifier and high speed, medium-power switching applications. Features High frequency current gain High speed switching For complementary use with PNP type GMBT2907A Package Dimensions REF. A B C D E F Millimeter Min. Max. 2.70 3.10 2.40 2.80 1.40 1.60 0.35 0.50 0 0.10 0.45 0.55 REF. G H K J L M Millimeter Min. Max. 1.90 REF. 1.00 1.30 0.10 0.20 0.40 0.85 1.15 0 10 Absolute Maximum Ratings at Ta = 25 Parameter Junction Temperature Symbol Ratings Tj +150 Unit Storage Temperature Collector to Base Voltage at Ta=25 Tstg -55 ~ +150 VCBO 75 V Collector to Emitter Voltage at Ta=25 VCEO 40 V Emitter to Base Voltage at Ta=25 VEBO 6 V Collector Current at Ta=25 IC 600 mA Total Power Dissipation at Ta=25 PD 225 mW Characteristics Symbol at Ta = 25 Min. Typ. Max. Unit BVCBO 75 - - V IC=100uA , IE=0 BVCEO 40 - - V IC=10mA, IB=0 BVEBO 6 - - V IE=10uA, IC=0 ICBO - - 10 nA VCB=60V, IE=0 ICEX - - 10 nA VCE=60V ,VEB(OFF)=3V IEBO - - 10 nA VEB=3V, IC=0 *VCE(sat)1 - - 500 mV IC=380mA, IB=10mA *VCE(sat)2 - - 1.0 V IC=500mA, IB=50mA *VBE(sat)1 - - 1.2 V IC=150mA, IB=15mA V IC=500mA, IB=50mA *VBE(sat)2 Test Conditions - - 2.0 *hFE1 35 - - VCE=10V, IC=100uA *hFE2 50 - - VCE=10V, IC=1mA *hFE3 75 - - VCE=10V, IC=10mA *hFE4 100 - 300 VCE=10V, IC=150mA *hFE5 40 - - fT 300 - - MHz - - 8 pF Cob VCE=10V, IC=500mA VCB=20V, IC=20mA, f=100MHz VCB=10V, IE=0, f=1MHz * Pulse Test: Pulse Width 380 s, Duty Cycle 2% 1/4 CORPORATION ISSUED DATE :2001/03/12 REVISED DATE :2005/06/27B Switching Characteristics Symbol td (Delay Time) Min. Typ. Max. Unit - - 10 ns tr (Rise Time) - - 25 ns ts (Storage Time) - - 225 ns tf (Fall Time) - - 60 ns Test Conditions VCC=30V, VBE(off)=-0.5V IC=150mA, IB1=15mA VCC=30V, IC=150mA, IB1=IB2=15mA Switching Time Equivalent Test Circuits Turn-On Time Turn-Off Time Characteristics Curve Fig 1. DC Current Gain Fig 2. Collector saturation Region 2/4 CORPORATION ISSUED DATE :2001/03/12 REVISED DATE :2005/06/27B Fig 3. Turn-On Time Fig 4. Turn-Off Time Fig 5. Frequency Effects Fig 6. Source Resistance Effects Fig 7. Capacitance Fig 8. Current-Gain Bandwidth Product 3/4 CORPORATION Fig 9. “On” Voltage ISSUED DATE :2001/03/12 REVISED DATE :2005/06/27B Fig 10. Temperature Coefficients Important Notice: All rights are reserved. Reproduction in whole or in part is prohibited without the prior written approval of GTM. GTM reserves the right to make changes to its products without notice. GTM semiconductor products are not warranted to be suitable for use in life-support Applications, or systems. GTM assumes no liability for any consequence of customer product design, infringement of patents, or application assistance. Head Office And Factory: Taiwan: No. 17-1 Tatung Rd. Fu Kou Hsin-Chu Industrial Park, Hsin-Chu, Taiwan, R. O. C. TEL : 886-3-597-7061 FAX : 886-3-597-9220, 597-0785 China: (201203) No.255, Jang-Jiang Tsai-Lueng RD. , Pu-Dung-Hsin District, Shang-Hai City, China TEL : 86-21-5895-7671 ~ 4 FAX : 86-21-38950165 4/4