ISSUED DATE :2005/06/24 REVISED DATE :2005/10/05B GSC4558 D U A L O P E R AT I O N A L A M P L I F I E R Description The GSC4558 is a monolithic integrated circuit designed for dual operational amplifier. Features No frequency compensated required No latch-up Large common mode and differential voltage range Parameter tracking over temperature range Gain and phase match between amplifiers Internally frequency compensated Low noise input transistors Package Dimensions REF. A B C D E F Pin Configurations Millimeter Min. Max. 5.80 4.80 3.80 0 0.40 0.19 6.20 5.00 4.00 8 0.90 0.25 REF. Millimeter Min. Max. M H L J K G 0.10 0.25 0.35 0.49 1.35 1.75 0.375 REF. 45 1.27 TYP. Block Diagram 1/4 ISSUED DATE :2005/06/24 REVISED DATE :2005/10/05B Absolute Maximum Ratings at Ta = 25 Parameter Supply Voltage Differential Input Voltage Input Voltage Power Dissipation Operating Temperature Range Storage Temperature Range Symbol VCC VI(DIFF) VI PD TOPR TSTG Value ±22 ±18 ±15 400 0 ~ +70 -65 ~ +150 Unit V V V mW Electrical Characteristics (VCC=15V Vee=-15V, TA=25 ) Parameter Supply Current, all Amp, no load Input Offset Voltage Input Offset Current Input Bias Current Common Mode Input Voltage Large Signal Voltage Gain Output Voltage Swing Common Mode Rejection Ratio Supply Voltage Rejection Ratio Power Consumption Symbol ICC VIO IIO IBIAS VI(R) GV VO(P-P) CMRR PSRR PC Slew Rate SR Rise Time TRIS Overshoot OS Input Resistance Output Resistance Ri RO Total Harmonic Distortion Channel Separation Test Conditions THD RS<10k VO(P-P)=±10V, RL 2k RL 10k RS 10k RS 10k Vi=±10V, RL 2k , CL 100pF Vi=±20mV, RL 2k , CL 100pF Vi=±20mV, RL 2k , CL 100pF f=1kHz, AV=20dB, RL=2k , VO= 2VPP, CL=100pF VO1/VO2 Min Typ Max Unit - 2.3 4.5 mA ±12 20 70 76 - 2 5 30 ±13 200 ±12 90 90 70 6 200 500 ±14 170 mV nA nA V V/mV V dB dB mV 1.2 2.2 - V/ s - 0.3 - s - 15 - % 0.3 - 2 75 - - 0.008 - % - 120 - dB Min 2.0 Typ 2.8 Max - Unit MHz M Frequency Characteristics (VCC=15V Vee=-15V, TA=25 ) Parameter Unity Gain Bandwidth Symbol BW Test Conditions 2/4 ISSUED DATE :2005/06/24 REVISED DATE :2005/10/05B Typical Performance Characteristics Fig 1. Burst Noise vs. Rs Fig 2. RMS Noise vs. Rs Fig 3. Output Noise vs. Rs Fig 4. Spectral Noise vs. Density Fig 5. Open Loop Frequency Response Fig 6. Phase Margin vs. Frequency 3/4 ISSUED DATE :2005/06/24 REVISED DATE :2005/10/05B Fig 7. Positive Output Voltage Swing vs. Load Resistance Fig 8. Power Bandwidth (Large Signal) Important Notice: All rights are reserved. Reproduction in whole or in part is prohibited without the prior written approval of GTM. GTM reserves the right to make changes to its products without notice. GTM semiconductor products are not warranted to be suitable for use in life-support Applications, or systems. GTM assumes no liability for any consequence of customer product design, infringement of patents, or application assistance. Head Office And Factory: Taiwan: No. 17-1 Tatung Rd. Fu Kou Hsin-Chu Industrial Park, Hsin-Chu, Taiwan, R. O. C. TEL : 886-3-597-7061 FAX : 886-3-597-9220, 597-0785 China: (201203) No.255, Jang-Jiang Tsai-Lueng RD. , Pu-Dung-Hsin District, Shang-Hai City, China TEL : 86-21-5895-7671 ~ 4 FAX : 86-21-38950165 4/4