Pb Free Plating Product ISSUED DATE :2006/12/19 REVISED DATE : GSC4N01 BVDSS RDS(ON) ID N-CHANNEL ENHANCEMENT MODE POWER MOSFET 20V 30m 6A Description The GSC4N01 provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effectiveness. The SOP-8 package is universally preferred for all commercial-industrial surface mount applications and suited for low voltage applications such as DC/DC converters. Features *Simple Drive Requirement *Lower On-resistance *Fast Switching Characteristic Package Dimensions REF. A B C D E F Millimeter Min. Max. 5.80 4.80 3.80 0° 0.40 0.19 6.20 5.00 4.00 8° 0.90 0.25 REF. M H L J K G Millimeter Min. Max. 0.10 0.25 0.35 0.49 1.35 1.75 0.375 REF. 45° 1.27 TYP. Absolute Maximum Ratings Parameter Drain-Source Voltage Gate-Source Voltage Ratings Unit VDS 20 V VGS ±10 V 3 ID @TA=25 6 A 3 ID @TA=70 4.8 A 20 A 2.5 W Continuous Drain Current , [email protected] Continuous Drain Current , [email protected] Pulsed Drain Current Symbol 1 IDM Total Power Dissipation PD @TA=25 Linear Derating Factor 0.02 Operating Junction and Storage Temperature Range Tj, Tstg -55 ~ +150 Symbol Value Rthj-amb 50 W/ Thermal Data Parameter Thermal Resistance Junction-ambient GSC4N01 Max. Unit /W Page: 1/4 ISSUED DATE :2006/12/19 REVISED DATE : Electrical Characteristics (Tj = 25 Parameter unless otherwise specified) Symbol Min. Typ. Max. Unit Drain-Source Breakdown Voltage BVDSS 20 - - V VGS=0, ID=250uA Gate Threshold Voltage VGS(th) 0.6 - 1.2 V VDS=VGS, ID=250uA gfs - 10 - S VDS=2.5V, ID=2A IGSS - - ±100 nA VGS= ±10V - - 1 uA VDS=20V, VGS=0 - - 25 uA VDS=16V, VGS=0 - - 30 - - 40 Forward Transconductance Gate-Source Leakage Current Drain-Source Leakage Current(Tj=25 ) Drain-Source Leakage Current(Tj=70 ) Static Drain-Source On-Resistance IDSS RDS(ON) m Total Gate Charge2 Qg - 11 16 Gate-Source Charge Qgs - 2.0 - Gate-Drain (“Miller”) Change Qgd - 3.0 - Td(on) - 13 - Tr - 35 - Td(off) - 45 - Tf - 50 - Input Capacitance Ciss - 870 1200 Output Capacitance Coss - 260 - Reverse Transfer Capacitance Crss - 60 - Symbol Min. Typ. Max. Unit VSD - - 1.2 V Turn-on Delay Time2 Rise Time Turn-off Delay Time Fall Time Test Conditions VGS=4.5V, ID=4.2A VGS=2.5V, ID=2.0A nC ID=4.2A VDS=12V VGS=4.5V ns VDS=12V ID=4.2A VGS=4.5V RG=2.3 pF VGS=0V VDS=10V f=1.0MHz Source-Drain Diode Parameter Forward On Voltage2 Test Conditions IS=1.7A, VGS=0V Notes: 1. Pulse width limited by Max. junction temperature. 2. Pulse width 300us, duty cycle 2%. 3. Surface mounted on 1 in2 copper pad of FR4 board; 125 /W when mounted on Min. copper pad. GSC4N01 Page: 2/4 ISSUED DATE :2006/12/19 REVISED DATE : ID (A) ID (A) Characteristics Curve VDS (V) VGS (V) Fig 1. Typical Output Characteristics RDS (ON) ( ) Normalized RDS (ON) ( ) Fig 2. Transfer Characteristics ID (A) TJ, Temperature ( ) Fig 4. On-Resistance v.s. Junction Temperature IS (A) RDS (ON) ( ) Fig 3. On-Resistance v.s. Drain Current and Gate Voltage VGS (V) Fig 5. On-Resistance v.s. Gate-Source Voltage GSC4N01 VDS (V) Fig 6. Body Diode Characteristics Page: 3/4 ID (A) IDSS, Leakage (nA) ISSUED DATE :2006/12/19 REVISED DATE : VDS (V) Fig 7. Maximum Safe Operating Area Fig 8. Drain-Source Leakage Current v.s. Voltage Power Dissipation VGS (V) Capacitance (pF) VDS (V) Qg (nC) VGS Fig 9. Gate Charge Characteristics 0.00001 0.0001 0.001 0.01 VDS (V) Fig 10. Typical Capacitance Characteristics 0.1 1 10 100 1000 Fig 11. Normalized Maximum Transient Thermal Impedance Important Notice: All rights are reserved. Reproduction in whole or in part is prohibited without the prior written approval of GTM. GTM reserves the right to make changes to its products without notice. GTM semiconductor products are not warranted to be suitable for use in life-support Applications, or systems. GTM assumes no liability for any consequence of customer product design, infringement of patents, or application assistance. Head Office And Factory: Taiwan: No. 17-1 Tatung Rd. Fu Kou Hsin-Chu Industrial Park, Hsin-Chu, Taiwan, R. O. C. TEL : 886-3-597-7061 FAX : 886-3-597-9220, 597-0785 China: (201203) No.255, Jang-Jiang Tsai-Lueng RD. , Pu-Dung-Hsin District, Shang-Hai City, China TEL : 86-21-5895-7671 ~ 4 FAX : 86-21-38950165 GSC4N01 Page: 4/4