Pb Free Plating Product ISSUED DATE :2005/06/27 REVISED DATE :2006/10/02C GSC6680 BVDSS RDS(ON) ID N-CHANNEL ENHANCEMENT MODE POWER MOSFET 30V 11m 11.5A Description The GSC6680 provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effectiveness. The SOP-8 package is universally preferred for all commercial-industrial surface mount applications and suited for low voltage applications such as DC/DC converters. Features *Low On-Resistance *High Vgs Max Rating Voltage *Surface Mount Package Package Dimensions REF. A B C D E F Millimeter Min. Max. 5.80 4.80 3.80 0 0.40 0.19 6.20 5.00 4.00 8 0.90 0.25 REF. M H L J K G Millimeter Min. Max. 0.10 0.25 0.35 0.49 1.35 1.75 0.375 REF. 45 1.27 TYP. Absolute Maximum Ratings Parameter Drain-Source Voltage Gate-Source Voltage Symbol Ratings Unit VDS 30 V VGS ±20 V Continuous Drain Current 3 ID @TA=25 11.5 A Continuous Drain Current 3 ID @TA=70 9.5 A 50 A 2.5 W Pulsed Drain Current 1 IDM Total Power Dissipation PD @TA=25 Linear Derating Factor 0.02 Operating Junction and Storage Temperature Range Tj, Tstg -55 ~ +150 Symbol Value Rthj-amb 50 W/ Thermal Data Parameter Thermal Resistance Junction-ambient GSC6680 3 Max. Unit /W Page: 1/5 ISSUED DATE :2005/06/27 REVISED DATE :2006/10/02C Electrical Characteristics (Tj = 25 Parameter unless otherwise specified) Symbol Min. Typ. Max. Unit Drain-Source Breakdown Voltage BVDSS 30 - - V Breakdown Voltage Temperature Coefficient BVDSS / Tj - 0.02 - Gate Threshold Voltage VGS(th) 1.0 - 3.0 V VDS=VGS, ID=250uA gfs - 30 - S VDS=15V, ID=11.5A IGSS - - ±100 nA VGS= ±20V - - 1 uA VDS=30V, VGS=0 - - 25 uA VDS=24V, VGS=0 - - 11 - - 18 Forward Transconductance Gate-Source Leakage Current Drain-Source Leakage Current(Tj=25 ) Drain-Source Leakage Current(Tj=70 ) Static Drain-Source On-Resistance2 IDSS RDS(ON) V/ m Test Conditions VGS=0, ID=250uA Reference to 25 , ID=1mA VGS=10V, ID=11.5A VGS=4.5V, ID=9.5A Total Gate Charge2 Qg - 16.8 - Gate-Source Charge Qgs - 4.2 - Gate-Drain (“Miller”) Change Qgd - 8 - Td(on) - 8.9 - Tr - 7.3 - Td(off) - 25.6 - Tf - 18.6 - Input Capacitance Ciss - 1450 - Output Capacitance Coss - 285 - Reverse Transfer Capacitance Crss - 180 - Symbol Min. Typ. Max. Unit VSD - - 1.3 V IS=3.5A, VGS=0V, Tj=25 IS - - 1.92 A VD=VG=0V, VS=1.3V Turn-on Delay Time2 Rise Time Turn-off Delay Time Fall Time nC ID=11.5A VDS=15V VGS=5V ns VDS=15V ID=1A VGS=10V RG=5.5 RD=10 pF VGS=0V VDS=25V f=1.0MHz Source-Drain Diode Parameter 2 Forward On Voltage Continuous Source Current (Body Diode) Test Conditions Notes: 1. Pulse width limited by Max. junction temperature. 2. Pulse width 300us, duty cycle 2%. 3. Surface mounted on 1 in2 copper pad of FR4 board; 125 /W when mounted on Min. copper pad. GSC6680 Page: 2/5 ISSUED DATE :2005/06/27 REVISED DATE :2006/10/02C Characteristics Curve Fig 1. Typical Output Characteristics Fig 2. Typical Output Characteristics Fig 3. On-Resistance v.s. Gate Voltage Fig 4. Normalized On-Resistance v.s. Junction Temperature Fig 5. Maximum Drain Current v.s. Case Temperature Fig 6. Type Power Dissipation GSC6680 Page: 3/5 ISSUED DATE :2005/06/27 REVISED DATE :2006/10/02C Fig 7. Maximum Safe Operating Area Fig 9. Gate Charge Characteristics Fig 11. Forward Characteristics of Reverse Diode GSC6680 Fig 8. Effective Transient Thermal Impedance Fig 10. Typical Capacitance Characteristics Fig 12. Gate Threshold Voltage v.s. Junction Temperature Page: 4/5 ISSUED DATE :2005/06/27 REVISED DATE :2006/10/02C Fig 13. Switching Time Circuit Fig 14. Switching Time Waveform Fig 15. Gate Charge Circuit Fig 16. Gate Charge Waveform Important Notice: All rights are reserved. Reproduction in whole or in part is prohibited without the prior written approval of GTM. GTM reserves the right to make changes to its products without notice. GTM semiconductor products are not warranted to be suitable for use in life-support Applications, or systems. GTM assumes no liability for any consequence of customer product design, infringement of patents, or application assistance. Head Office And Factory: Taiwan: No. 17-1 Tatung Rd. Fu Kou Hsin-Chu Industrial Park, Hsin-Chu, Taiwan, R. O. C. TEL : 886-3-597-7061 FAX : 886-3-597-9220, 597-0785 China: (201203) No.255, Jang-Jiang Tsai-Lueng RD. , Pu-Dung-Hsin District, Shang-Hai City, China TEL : 86-21-5895-7671 ~ 4 FAX : 86-21-38950165 GSC6680 Page: 5/5