GTM GSC8107E

Pb Free Plating Product
ISSUED DATE :2006/11/02
REVISED DATE :
GSC8107E
BVDSS
RDS(ON)
ID
P-CHANNEL ENHANCEMENT MODE POWER MOSFET
-30V
7.0m
-13A
Description
The GSC8107E provide the designer with the best combination of fast switching, ruggedized device design,
low on-resistance and cost-effectiveness.
The SOP-8 package is universally preferred for all commercial-industrial surface mount applications and suited
for low voltage applications such as DC/DC converters.
Features
*Simple Drive Requirement
*Lower On-resistance
*Fast Switching Characteristic
Package Dimensions
REF.
A
B
C
D
E
F
Millimeter
Min.
Max.
5.80
4.80
3.80
0°
0.40
0.19
6.20
5.00
4.00
8°
0.90
0.25
REF.
M
H
L
J
K
G
Millimeter
Min.
Max.
0.10
0.25
0.35
0.49
1.35
1.75
0.375 REF.
45°
1.27 TYP.
Absolute Maximum Ratings
Parameter
Drain-Source Voltage
Gate-Source Voltage
Symbol
Ratings
Unit
VDS
-30
V
VGS
±20
V
Continuous Drain Current
3
ID @TA=25
-13
A
Continuous Drain Current
3
ID @TA=70
-10
A
-52
A
2.5
W
Pulsed Drain Current
1
IDM
Total Power Dissipation
PD @TA=25
Linear Derating Factor
0.02
Operating Junction and Storage Temperature Range
Tj, Tstg
-55 ~ +150
Symbol
Value
Rthj-amb
50
W/
Thermal Data
Parameter
Thermal Resistance Junction-ambient
GSC8107E
3
Max.
Unit
/W
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ISSUED DATE :2006/11/02
REVISED DATE :
Electrical Characteristics (Tj = 25
Parameter
unless otherwise specified)
Symbol
Min.
Typ.
Max.
Unit
Drain-Source Breakdown Voltage
BVDSS
-30
-
-
V
VGS=0, ID=-10mA
Gate Threshold Voltage
VGS(th)
-0.8
-
-2.0
V
VDS=10, ID=-1mA
gfs
-
31
-
S
VDS=-10V, ID=-6.5A
Gate-Source Leakage Current
IGSS
-
-
±10
uA
VGS= ±16V
Drain-Source Leakage Current
IDSS
-
-
-10
uA
VDS=-30V, VGS=0
-
-
7
-
-
15
Forward Transconductance
Static Drain-Source On-Resistance2
2
RDS(ON)
m
Total Gate Charge
Qg
-
130
-
Gate-Source Charge
Qgs
-
10
-
Gate-Drain (“Miller”) Change
Qgd
-
30
-
Td(on)
-
22
-
Tr
-
11
-
Td(off)
-
395
-
Tf
-
110
-
Input Capacitance
Ciss
-
5880
-
Output Capacitance
Coss
-
1000
-
Reverse Transfer Capacitance
Crss
-
1050
-
Symbol
Min.
Typ.
Max.
Unit
VSD
-
-
-1.2
V
Turn-on Delay Time2
Rise Time
Turn-off Delay Time
Fall Time
Test Conditions
VGS=-10V, ID=-6.5A
VGS=-4.5V, ID=-6.5A
nC
ID=-13A
VDS=-24V
VGS=-10V
ns
VDS=-15V
ID=-6.5A
VGS=-10V
RG=4.7
RL=2.3
pF
VGS=0V
VDS=-10V
f=1.0MHz
Source-Drain Diode
Parameter
Forward On Voltage2
Test Conditions
IS=-13A, VGS=0V
Notes: 1. Pulse width limited by Max. junction temperature.
2. Pulse width 300us, duty cycle 2%.
2
3. Surface mounted on 1 in copper pad of FR4 board; 125 /W when mounted on Min. copper pad.
GSC8107E
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ISSUED DATE :2006/11/02
REVISED DATE :
Characteristics Curve
Fig 1. Typical Output Characteristics
Fig 3. On-Resistance v.s. Drain Current
Fig 5. Drain-Source Voltage
v.s. Gate-Source Voltage
GSC8107E
Fig 2. Typical Output Characteristics
Fig 4. On-Resistance
v.s. Ambient Temperature
Fig 6. Drain Current
v.s. Gate-Source Voltage
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ISSUED DATE :2006/11/02
REVISED DATE :
Fig 7. Gate Charge Characteristics
Fig 9. Threshold Voltage
Fig 8. Typical Capacitance Characteristics
Fig 10. Safe Operating Area
Important Notice:
All rights are reserved. Reproduction in whole or in part is prohibited without the prior written approval of GTM.
GTM reserves the right to make changes to its products without notice.
GTM semiconductor products are not warranted to be suitable for use in life-support Applications, or systems.
GTM assumes no liability for any consequence of customer product design, infringement of patents, or application assistance.
Head Office And Factory:
Taiwan: No. 17-1 Tatung Rd. Fu Kou Hsin-Chu Industrial Park, Hsin-Chu, Taiwan, R. O. C.
TEL : 886-3-597-7061 FAX : 886-3-597-9220, 597-0785
China: (201203) No.255, Jang-Jiang Tsai-Lueng RD. , Pu-Dung-Hsin District, Shang-Hai City, China
TEL : 86-21-5895-7671 ~ 4 FAX : 86-21-38950165
GSC8107E
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