Pb Free Plating Product ISSUED DATE :2006/11/02 REVISED DATE : GSC8107E BVDSS RDS(ON) ID P-CHANNEL ENHANCEMENT MODE POWER MOSFET -30V 7.0m -13A Description The GSC8107E provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effectiveness. The SOP-8 package is universally preferred for all commercial-industrial surface mount applications and suited for low voltage applications such as DC/DC converters. Features *Simple Drive Requirement *Lower On-resistance *Fast Switching Characteristic Package Dimensions REF. A B C D E F Millimeter Min. Max. 5.80 4.80 3.80 0° 0.40 0.19 6.20 5.00 4.00 8° 0.90 0.25 REF. M H L J K G Millimeter Min. Max. 0.10 0.25 0.35 0.49 1.35 1.75 0.375 REF. 45° 1.27 TYP. Absolute Maximum Ratings Parameter Drain-Source Voltage Gate-Source Voltage Symbol Ratings Unit VDS -30 V VGS ±20 V Continuous Drain Current 3 ID @TA=25 -13 A Continuous Drain Current 3 ID @TA=70 -10 A -52 A 2.5 W Pulsed Drain Current 1 IDM Total Power Dissipation PD @TA=25 Linear Derating Factor 0.02 Operating Junction and Storage Temperature Range Tj, Tstg -55 ~ +150 Symbol Value Rthj-amb 50 W/ Thermal Data Parameter Thermal Resistance Junction-ambient GSC8107E 3 Max. Unit /W Page: 1/4 ISSUED DATE :2006/11/02 REVISED DATE : Electrical Characteristics (Tj = 25 Parameter unless otherwise specified) Symbol Min. Typ. Max. Unit Drain-Source Breakdown Voltage BVDSS -30 - - V VGS=0, ID=-10mA Gate Threshold Voltage VGS(th) -0.8 - -2.0 V VDS=10, ID=-1mA gfs - 31 - S VDS=-10V, ID=-6.5A Gate-Source Leakage Current IGSS - - ±10 uA VGS= ±16V Drain-Source Leakage Current IDSS - - -10 uA VDS=-30V, VGS=0 - - 7 - - 15 Forward Transconductance Static Drain-Source On-Resistance2 2 RDS(ON) m Total Gate Charge Qg - 130 - Gate-Source Charge Qgs - 10 - Gate-Drain (“Miller”) Change Qgd - 30 - Td(on) - 22 - Tr - 11 - Td(off) - 395 - Tf - 110 - Input Capacitance Ciss - 5880 - Output Capacitance Coss - 1000 - Reverse Transfer Capacitance Crss - 1050 - Symbol Min. Typ. Max. Unit VSD - - -1.2 V Turn-on Delay Time2 Rise Time Turn-off Delay Time Fall Time Test Conditions VGS=-10V, ID=-6.5A VGS=-4.5V, ID=-6.5A nC ID=-13A VDS=-24V VGS=-10V ns VDS=-15V ID=-6.5A VGS=-10V RG=4.7 RL=2.3 pF VGS=0V VDS=-10V f=1.0MHz Source-Drain Diode Parameter Forward On Voltage2 Test Conditions IS=-13A, VGS=0V Notes: 1. Pulse width limited by Max. junction temperature. 2. Pulse width 300us, duty cycle 2%. 2 3. Surface mounted on 1 in copper pad of FR4 board; 125 /W when mounted on Min. copper pad. GSC8107E Page: 2/4 ISSUED DATE :2006/11/02 REVISED DATE : Characteristics Curve Fig 1. Typical Output Characteristics Fig 3. On-Resistance v.s. Drain Current Fig 5. Drain-Source Voltage v.s. Gate-Source Voltage GSC8107E Fig 2. Typical Output Characteristics Fig 4. On-Resistance v.s. Ambient Temperature Fig 6. Drain Current v.s. Gate-Source Voltage Page: 3/4 ISSUED DATE :2006/11/02 REVISED DATE : Fig 7. Gate Charge Characteristics Fig 9. Threshold Voltage Fig 8. Typical Capacitance Characteristics Fig 10. Safe Operating Area Important Notice: All rights are reserved. Reproduction in whole or in part is prohibited without the prior written approval of GTM. GTM reserves the right to make changes to its products without notice. GTM semiconductor products are not warranted to be suitable for use in life-support Applications, or systems. GTM assumes no liability for any consequence of customer product design, infringement of patents, or application assistance. Head Office And Factory: Taiwan: No. 17-1 Tatung Rd. Fu Kou Hsin-Chu Industrial Park, Hsin-Chu, Taiwan, R. O. C. TEL : 886-3-597-7061 FAX : 886-3-597-9220, 597-0785 China: (201203) No.255, Jang-Jiang Tsai-Lueng RD. , Pu-Dung-Hsin District, Shang-Hai City, China TEL : 86-21-5895-7671 ~ 4 FAX : 86-21-38950165 GSC8107E Page: 4/4