Pb Free Plating Product ISSUED DATE :2006/10/31 REVISED DATE : GTT3434 BVDSS RDS(ON) ID N-CHANNEL ENHANCEMENT MODE POWER MOSFET 30V 34m 6.1A Description The GTT3434 uses advanced trench technology to provide excellent on-resistance and low gate charge. The TSSOP-6 package is universally used for all commercial-industrial surface mount applications. Features * Low on-resistance *Capable of 2.5V gate drive Package Dimensions REF. A A1 A2 c D E E1 Millimeter Min. Max. 1.10 MAX. 0 0.10 0.70 1.00 0.12 REF. 2.70 3.10 2.60 3.00 1.40 1.80 REF. L L1 b e e1 Millimeter Min. Max. 0.45 REF. 0.60 REF. 0° 10° 0.30 0.50 0.95 REF. 1.90 REF. Absolute Maximum Ratings Parameter Drain-Source Voltage Gate-Source Voltage Ratings Unit VDS 30 V VGS ±12 V 3 ID @TA=25 6.1 A 3 ID @TA=70 4.9 A 30 A 1.14 W Continuous Drain Current , [email protected] Continuous Drain Current , [email protected] Pulsed Drain Current Symbol 1 IDM Total Power Dissipation PD @TA=25 Linear Derating Factor 0.01 Operating Junction and Storage Temperature Range Tj, Tstg -55 ~ +150 Symbol Value Rthj-a 110 W/ Thermal Data Parameter Thermal Resistance Junction-ambient GTT3434 3 Max. Unit /W Page: 1/4 ISSUED DATE :2006/10/31 REVISED DATE : Electrical Characteristics (Tj = 25 Parameter unless otherwise specified) Symbol Min. Typ. Max. Unit Drain-Source Breakdown Voltage BVDSS 30 - - V VGS=0, ID=250uA Gate Threshold Voltage VGS(th) 0.6 - - V VDS=VGS, ID=1mA gfs - 20 - S VDS=10V, ID=6.1A IGSS - - ±100 nA VGS= ±12V - - 1 uA VDS=30V, VGS=0 - - 5 uA VDS=24V, VGS=0 - - 34 - - 50 Forward Transconductance Gate-Source Leakage Current Drain-Source Leakage Current(Tj=25 ) Drain-Source Leakage Current(Tj=70 ) Static Drain-Source On-Resistance2 IDSS RDS(ON) m Test Conditions VGS=4.5V, ID=6.1A VGS=2.5V, ID=2.0A Total Gate Charge2 Qg - 8 12 Gate-Source Charge Qgs - 1.9 - Gate-Drain (“Miller”) Change Qgd - 2.6 - Td(on) - 21 - Tr - 45 - Td(off) - 40 - Tf - 30 - Symbol Min. Typ. Max. Unit VSD - - 1.2 V IS=1.7A, VGS=0V Trr - 40 - ns IS=1.7A, dI/dt=100A/ s Turn-on Delay Time2 Rise Time Turn-off Delay Time Fall Time nC ID=6.1A VDS=15V VGS=4.5V ns VDS=15V ID=1A VGS=4.5V RG=6 RL=15 Source-Drain Diode Parameter Forward On Voltage2 2 Reverse Recovery Time Test Conditions Notes: 1. Pulse width limited by Max. junction temperature. 2. Pulse width 300us, duty cycle 2%. 3. Surface mounted on 1 in2 copper pad of FR4 board, t 5sec; 180 /W when mounted on Min. copper pad. GTT3434 Page: 2/4 ISSUED DATE :2006/10/31 REVISED DATE : Characteristics Curve Fig 1. Typical Output Characteristics Fig 3. On-Resistance v.s. Drain Current Fig 5. On-Resistance v.s. Gate-Source Voltage GTT3434 Fig 2. Transfer Characteristics Fig 4. On-Resistance v.s. Junction Temperature Fig 6. Body Diode Characteristics Page: 3/4 ISSUED DATE :2006/10/31 REVISED DATE : Fig 7. Gate Charge Characteristics Fig 8. Typical Capacitance Characteristics Fig 9. Threshold Voltage Fig 10. Single Pulse Power 0.0001 0.001 0.01 0.1 1 10 100 600 Fig 11. Normalized Maximum Transient Thermal Impedance Important Notice: All rights are reserved. Reproduction in whole or in part is prohibited without the prior written approval of GTM. GTM reserves the right to make changes to its products without notice. GTM semiconductor products are not warranted to be suitable for use in life-support Applications, or systems. GTM assumes no liability for any consequence of customer product design, infringement of patents, or application assistance. Head Office And Factory: Taiwan: No. 17-1 Tatung Rd. Fu Kou Hsin-Chu Industrial Park, Hsin-Chu, Taiwan, R. O. C. TEL : 886-3-597-7061 FAX : 886-3-597-9220, 597-0785 China: (201203) No.255, Jang-Jiang Tsai-Lueng RD. , Pu-Dung-Hsin District, Shang-Hai City, China TEL : 86-21-5895-7671 ~ 4 FAX : 86-21-38950165 GTT3434 Page: 4/4