Pb Free Plating Product ISSUED DATE :2006/01/23 REVISED DATE : N-CH BVDSS 16V N-CH RDS(ON) 58m N-CH ID 3.5A P-CH BVDSS -16V N-CH RDS(ON) 125m N-CH ID -2.5A GT2531 N AND P-CHANNEL ENHANCEMENT MODE POWER MOSFET Description The GT2531 utilized advanced processing techniques to achieve the lowest possible on-resistance, extremely efficient and cost-effectiveness device. The SOT-26 package is universally used for all commercial-industrial surface mount applications. Features *Low Gate Change *Low On-resistance *RoHS Compliant Package Dimensions REF. A Max. 3.10 B C D 2.60 1.40 0.30 E F 0 0° Absolute Maximum Ratings Parameter Symbol Drain-Source Voltage Gate-Source Voltage Millimeter Min. 2.70 REF. Dimensions G Millimeter 1.90 REF. 3.00 1.80 0.55 H I J 1.20 REF. 0.12 REF. 0.37 REF. 0.10 10° K L 0.60 REF. 0.95 REF. Ratings N-channel P-channel Unit VDS 16 -16 V VGS ±8 ±8 V Continuous Drain Current 3 ID @TA=25 3.5 -2.5 A Continuous Drain Current 3 ID @TA=70 2.8 -2.0 A 10 -10 A Pulsed Drain Current 1 IDM Total Power Dissipation PD @TA=25 Linear Derating Factor 1.14 0.01 Operating Junction and Storage Temperature Range Tj, Tstg -55 ~ +150 Symbol Value Rthj-a 110 W W/ Thermal Data Parameter Thermal Resistance Junction-ambient GT2531 3 Max. Unit /W Page: 1/7 ISSUED DATE :2006/01/23 REVISED DATE : N-Channel Electrical Characteristics (Tj = 25 Parameter unless otherwise specified) Symbol Min. Typ. Max. Unit Drain-Source Breakdown Voltage BVDSS 16 - - V Breakdown Voltage Temperature Coefficient BVDSS / Tj - 0.01 - Gate Threshold Voltage VGS(th) 0.2 - 1.0 V VDS=VGS, ID=250uA gfs - 9 - S VDS=5V, ID=3A IGSS - - ±100 nA VGS= ± 8V - - 1 uA VDS=16V, VGS=0 - - 25 Ua VDS=12V, VGS=0 - - 58 - - 70 - - 85 Forward Transconductance Gate-Source Leakage Current Drain-Source Leakage Current(Tj=25 ) Drain-Source Leakage Current(Tj=70 ) 2 Static Drain-Source On-Resistance IDSS RDS(ON) V/ m - 7 12 Gate-Source Charge Qgs - 0.6 - Gate-Drain (“Miller”) Change Qgd - 2 - Td(on) - 6 - Tr - 11 - Td(off) - 17 - Tf - 3 - Input Capacitance Ciss - 360 580 Output Capacitance Coss - 50 - Reverse Transfer Capacitance Crss - 40 - Rg - 1.4 2.0 Symbol Min. Typ. Max. Unit VSD - - 1.3 V Turn-off Delay Time Fall Time Gate Resistance Reference to 25 , ID=1mA VGS=2.5V, ID=2A VGS=1.8V, ID=1A Qg Rise Time VGS=0, ID=250uA VGS=4.5V, ID=3A Total Gate Charge2 Turn-on Delay Time2 Test Conditions nC ID=3A VDS=10V VGS=4.5V ns VDS=10V ID=1A VGS=5V RG=3.3 RD=10 pF VGS=0V VDS=15V f=1.0MHz f=1.0MHz Source-Drain Diode Parameter Forward On Voltage2 Test Conditions IS=0.9A, VGS=0V Notes: 1. Pulse width limited by Max. junction temperature. 2. Pulse width 300us, duty cycle 2%. 2 3. Surface mounted on 1 in copper pad of FR4 board, t 5sec; 180 /W when mounted on Min. copper pad. GT2531 Page: 2/7 ISSUED DATE :2006/01/23 REVISED DATE : P-Channel Electrical Characteristics (Tj = 25 Parameter unless otherwise specified) Symbol Min. Typ. Max. Unit Drain-Source Breakdown Voltage BVDSS -16 - - V Breakdown Voltage Temperature Coefficient BVDSS / Tj - 0.01 - Gate Threshold Voltage VGS(th) -0.2 - -1.0 V VDS=VGS, ID=-250uA gfs - 5 - S VDS=-5V, ID=-2A IGSS - - ±100 nA VGS= ± 8V - - -1 uA VDS=-16V, VGS=0 - - -25 uA VDS=-12V, VGS=0 - - 125 - - 155 - - 200 Forward Transconductance Gate-Source Leakage Current Drain-Source Leakage Current(Tj=25 ) Drain-Source Leakage Current(Tj=70 ) 2 Static Drain-Source On-Resistance IDSS RDS(ON) V/ m - 6 10 Gate-Source Charge Qgs - 0.8 - Gate-Drain (“Miller”) Change Qgd - 2 - Td(on) - 7 - Tr - 20 - Td(off) - 23 - Tf - 24 - Input Capacitance Ciss - 370 600 Output Capacitance Coss - 70 - Reverse Transfer Capacitance Crss - 60 - Rg - 8 12 Symbol Min. Typ. Max. Unit VSD - - -1.3 V Turn-off Delay Time Fall Time Gate Resistance Reference to 25 , ID=-1mA VGS=-2.5V, ID=-1.6A VGS=-1.8V, ID=-1A Qg Rise Time VGS=0, ID=-250uA VGS=-4.5V, ID=-2A Total Gate Charge2 Turn-on Delay Time2 Test Conditions nC ID=-2A VDS=-10V VGS=-4.5V ns VDS=-10V ID=-1A VGS=-5V RG=3.3 RD=10 pF VGS=0V VDS=-15V f=1.0MHz f=1.0MHz Source-Drain Diode Parameter Forward On Voltage2 Test Conditions IS=-0.9A, VGS=0V Notes: 1. Pulse width limited by Max. junction temperature. 2. Pulse width 300us, duty cycle 2%. 2 3. Surface mounted on 1 in copper pad of FR4 board, t 5sec; 180 /W when mounted on Min. copper pad. GT2531 Page: 3/7 ISSUED DATE :2006/01/23 REVISED DATE : Characteristics Curve N-Channel Fig 1. Typical Output Characteristics Fig 3. On-Resistance v.s. Gate Voltage Fig 5. Forward Characteristics of Reverse Diode GT2531 Fig 2. Typical Output Characteristics Fig 4. Normalized On-Resistance v.s. Junction Temperature Fig 6. Gate Threshold Voltage v.s. Junction Temperature Page: 4/7 ISSUED DATE :2006/01/23 REVISED DATE : N-Channel Fig 7. Gate Charge Characteristics Fig 9. Maximum Safe Operating Area Fig 11. Transfer Characteristics GT2531 Fig 8. Typical Capacitance Characteristics Fig 10. Effective Transient Thermal Impedance Fig 12. Gate Charge Waveform Page: 5/7 ISSUED DATE :2006/01/23 REVISED DATE : P-Channel Fig 1. Typical Output Characteristics GT2531 Fig 2. Typical Output Characteristics Fig 3. On-Resistance v.s. Gate Voltage Fig 4. Normalized On-Resistance v.s. Junction Temperature Fig 5. Forward Characteristics of Reverse Diode Fig 6. Gate Threshold Voltage v.s. Junction Temperature Page: 6/7 ISSUED DATE :2006/01/23 REVISED DATE : P-Channel Fig 7. Gate Charge Characteristics Fig 9. Maximum Safe Operating Area Fig 11. Transfer Characteristics Fig 8. Typical Capacitance Characteristics Fig 10. Effective Transient Thermal Impedance Fig 12. Gate Charge Waveform Important Notice: All rights are reserved. Reproduction in whole or in part is prohibited without the prior written approval of GTM. GTM reserves the right to make changes to its products without notice. GTM semiconductor products are not warranted to be suitable for use in life-support Applications, or systems. GTM assumes no liability for any consequence of customer product design, infringement of patents, or application assistance. Head Office And Factory: Taiwan: No. 17-1 Tatung Rd. Fu Kou Hsin-Chu Industrial Park, Hsin-Chu, Taiwan, R. O. C. TEL : 886-3-597-7061 FAX : 886-3-597-9220, 597-0785 China: (201203) No.255, Jang-Jiang Tsai-Lueng RD. , Pu-Dung-Hsin District, Shang-Hai City, China TEL : 86-21-5895-7671 ~ 4 FAX : 86-21-38950165 GT2531 Page: 7/7