GTM GTC9922E

Pb Free Plating Product
ISSUED DATE :2007/01/25
REVISED DATE :
GTC9922E
BVDSS
RDS(ON)
ID
N-CHANNEL ENHANCEMENT MODE POWER MOSFET
20V
15m
6.8A
Description
The GTC9922E provides the designer with the best combination of fast switching, ruggedized device design,
ultra low on-resistance and cost-effectiveness.
Features
*Low on-resistance
*Capable of 2.5V gate drive
*Optimal DC/DC battery application
*Surface mount package
Package Dimensions
REF.
A
A1
b
c
D
Millimeter
Min.
Max.
-
1.20
0.05
0.15
0.19
0.30
0.09
0.20
2.90
3.10
REF.
E
E1
e
L
S
Millimeter
Min.
Max.
6.20
6.60
4.30
4.50
0.65 BSC
0.45
0.75
0°
8°
Absolute Maximum Ratings
Parameter
Drain-Source Voltage
Gate-Source Voltage
Ratings
Unit
VDS
20
V
VGS
±12
V
3
ID @TA=25
6.8
A
3
ID @TA=70
5.4
A
25
A
1
W
Continuous Drain Current , [email protected]
Continuous Drain Current , [email protected]
Pulsed Drain Current
Symbol
1
IDM
Total Power Dissipation
PD @TA=25
Linear Derating Factor
0.008
Operating Junction and Storage Temperature Range
Tj, Tstg
-55 ~ +150
Symbol
Value
Rthj-a
125
W/
Thermal Data
Parameter
Thermal Resistance Junction-ambient
GTC9922E
3
Max.
Unit
/W
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ISSUED DATE :2007/01/25
REVISED DATE :
Electrical Characteristics (Tj = 25
Parameter
unless otherwise specified)
Symbol
Min.
Typ.
Max.
Unit
Drain-Source Breakdown Voltage
BVDSS
20
-
-
V
Breakdown Voltage Temperature Coefficient
BVDSS / Tj
-
0.05
-
Gate Threshold Voltage
VGS(th)
0.5
-
1.2
V
VDS=VGS, ID=1mA
gfs
-
22
-
S
VDS=4.5V, ID=6A
IGSS
-
-
±10
uA
VGS= ±12V
-
-
10
uA
VDS=20V, VGS=0
-
-
100
uA
VDS=16V, VGS=0
-
-
15
-
-
20
Qg
-
25
40
Gate-Source Charge
Qgs
-
3
-
Gate-Drain (“Miller”) Change
Qgd
-
9
-
Td(on)
-
11
-
Tr
-
12
-
Td(off)
-
47
-
Tf
-
23
-
Input Capacitance
Ciss
-
1730
2770
Output Capacitance
Coss
-
280
-
Reverse Transfer Capacitance
Crss
-
240
-
Rg
-
2.2
-
Symbol
Min.
Typ.
Max.
Unit
VSD
-
-
1.2
V
IS=0.84A, VGS=0V
Reverse Recovery Time
Trr
-
24
-
ns
Reverse Recovery Charge
Qrr
-
18
-
nC
IS=6A, VGS=0V
dI/dt=100A/ s
Forward Transconductance
Gate-Source Leakage Current
Drain-Source Leakage Current(Tj=25 )
Drain-Source Leakage Current(Tj=70 )
Static Drain-Source On-Resistance2
2
Total Gate Charge
2
Turn-on Delay Time
Rise Time
Turn-off Delay Time
Fall Time
Gate Resistance
IDSS
RDS(ON)
V/
m
Test Conditions
VGS=0, ID=250uA
Reference to 25 , ID=1mA
VGS=4.5V, ID=6A
VGS=2.5V, ID=4A
nC
ID=6A
VDS=16V
VGS=4.5V
ns
VDS=15V
ID=1A
VGS=4.5V
RG=3.3
RD=15
pF
VGS=0V
VDS=20V
f=1.0MHz
f=1.0MHz
Source-Drain Diode
Parameter
2
Forward On Voltage
2
Test Conditions
Notes: 1. Pulse width limited by Max. junction temperature.
2. Pulse width 300us, duty cycle 2%.
2
3. Surface mounted on 1 in copper pad of FR4 board; 208 /W when mounted on Min. copper pad.
GTC9922E
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ISSUED DATE :2007/01/25
REVISED DATE :
Characteristics Curve
Fig 1. Typical Output Characteristics
Fig 3. On-Resistance v.s. Gate Voltage
Fig 5. Forward Characteristics of
Reverse Diode
GTC9922E
Fig 2. Typical Output Characteristics
Fig 4. Normalized On-Resistance
v.s. Junction Temperature
Fig 6. Gate Threshold Voltage v.s.
Junction Temperature
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ISSUED DATE :2007/01/25
REVISED DATE :
Fig 7. Gate Charge Characteristics
Fig 9. Maximum Safe Operating Area
Fig 11. Switching Time Waveform
Fig 8. Typical Capacitance Characteristics
Fig 10. Effective Transient Thermal Impedance
Fig 12. Gate Charge Waveform
Important Notice:
All rights are reserved. Reproduction in whole or in part is prohibited without the prior written approval of GTM.
GTM reserves the right to make changes to its products without notice.
GTM semiconductor products are not warranted to be suitable for use in life-support Applications, or systems.
GTM assumes no liability for any consequence of customer product design, infringement of patents, or application assistance.
Head Office And Factory:
Taiwan: No. 17-1 Tatung Rd. Fu Kou Hsin-Chu Industrial Park, Hsin-Chu, Taiwan, R. O. C.
TEL : 886-3-597-7061 FAX : 886-3-597-9220, 597-0785
China: (201203) No.255, Jang-Jiang Tsai-Lueng RD. , Pu-Dung-Hsin District, Shang-Hai City, China
TEL : 86-21-5895-7671 ~ 4 FAX : 86-21-38950165
GTC9922E
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