GTM GS1332E

Pb Free Plating Product
ISSUED DATE :2005/03/10
REVISED DATE :2006/11/24C
GS1332E
N-CHANNEL ENHANCEMENT MODE POWER MOSFET
BVDSS
RDS(ON)
ID
20V
600m
600mA
Description
The GS1332E provide the designer with best combination of fast switching, low on-resistance and
cost-effectiveness.
Features
*Simple Gate Drive
*Small Package Outline
*2KV ESD Rating (Per MIL-STD-883D)
Package Dimensions
REF.
A
A1
A2
D
E
HE
Absolute Maximum Ratings
Parameter
Drain-Source Voltage
Gate-Source Voltage
3
Continuous Drain Current
Continuous Drain Current3
Pulsed Drain Current1,2
Total Power Dissipation
Linear Derating Factor
Operating Junction and Storage Temperature Range
Thermal Data
Parameter
Thermal Resistance Junction-ambient3 Max.
GS1332E
Symbol
VDS
VGS
ID @TA=25
ID @TA=70
IDM
PD @TA=25
Millimeter
Min.
Max.
0.80
1.10
0
0.10
0.80
1.00
1.80
2.20
1.15
1.35
1.80
2.40
REF.
L1
L
b
c
e
Q1
Millimeter
Min.
Max.
0.42 REF.
0.15
0.35
0.25
0.40
0.10
0.25
0.65 REF.
0.15 BSC.
Unit
V
V
mA
mA
A
W
W/
Tj, Tstg
Ratings
20
±5
600
470
2.5
0.35
0.003
-55 ~ +150
Symbol
Rthj-a
Value
360
Unit
/W
Page: 1/4
ISSUED DATE :2005/03/10
REVISED DATE :2006/11/24C
Electrical Characteristics (Tj = 25
Parameter
unless otherwise specified)
Symbol
Min.
Typ.
Max.
Unit
Drain-Source Breakdown Voltage
BVDSS
20
-
-
V
Breakdown Voltage Temperature Coefficient
BVDSS / Tj
-
0.02
-
Gate Threshold Voltage
VGS(th)
0.5
-
1.2
V
VDS=VGS, ID=250uA
gfs
-
1
-
S
VDS=5V, ID=600mA
IGSS
-
-
±10
uA
VGS= ±5V
-
-
1
uA
VDS=20V, VGS=0
-
-
10
uA
VDS=16V, VGS=0
-
-
600
-
-
1200
Forward Transconductance
Gate-Source Leakage Current
Drain-Source Leakage Current(Tj=25 )
Drain-Source Leakage Current(Tj=70 )
Static Drain-Source On-Resistance
IDSS
RDS(ON)
V/
m
Total Gate Charge2
Qg
-
1.3
2
Gate-Source Charge
Qgs
-
0.3
-
Gate-Drain (“Miller”) Change
Qgd
-
0.5
-
Td(on)
-
4
-
Tr
-
10
-
Td(off)
-
15
-
Tf
-
2
-
Input Capacitance
Ciss
-
38
60
Output Capacitance
Coss
-
17
-
Reverse Transfer Capacitance
Crss
-
12
-
Symbol
Min.
Typ.
Max.
Unit
VSD
-
-
1.2
V
Turn-on Delay Time2
Rise Time
Turn-off Delay Time
Fall Time
Test Conditions
VGS=0, ID=250uA
Reference to 25 , ID=1mA
VGS=4.5V, ID=600mA
VGS=2.5V, ID=400mA
nC
ID=600mA
VDS=16V
VGS=4.5V
ns
VDS=10V
ID=600mA
VGS=10V
RG=3.3
RD=16.7
pF
VGS=0V
VDS=10V
f=1.0MHz
Source-Drain Diode
Parameter
2
Forward On Voltage
Test Conditions
IS=300mA, VGS=0V
Notes: 1. Pulse width limited by Max. junction temperature.
2. Pulse width 300us, duty cycle 2%.
3. Surface mounted on FR4 board, t
GS1332E
10sec.
Page: 2/4
ISSUED DATE :2005/03/10
REVISED DATE :2006/11/24C
Characteristics Curve
Fig 1. Typical Output Characteristics
Fig 3. On-Resistance v.s. Gate Voltage
Fig 5. Forward Characteristics of
Reverse Diode
GS1332E
Fig 2. Typical Output Characteristics
Fig 4. Normalized On-Resistance
v.s. Junction Temperature
Fig 6. Gate Threshold Voltage v.s.
Junction Temperature
Page: 3/4
ISSUED DATE :2005/03/10
REVISED DATE :2006/11/24C
Fig 7. Gate Charge Characteristics
Fig 8. Typical Capacitance Characteristics
Fig 9. Maximum Safe Operating Area
Fig 10. Effective Transient Thermal Impedance
Fig 11. Switching Time Waveform
Fig 12. Gate Charge Waveform
Important Notice:
All rights are reserved. Reproduction in whole or in part is prohibited without the prior written approval of GTM.
GTM reserves the right to make changes to its products without notice.
GTM semiconductor products are not warranted to be suitable for use in life-support Applications, or systems.
GTM assumes no liability for any consequence of customer product design, infringement of patents, or application assistance.
Head Office And Factory:
Taiwan: No. 17-1 Tatung Rd. Fu Kou Hsin-Chu Industrial Park, Hsin-Chu, Taiwan, R. O. C.
TEL : 886-3-597-7061 FAX : 886-3-597-9220, 597-0785
China: (201203) No.255, Jang-Jiang Tsai-Lueng RD. , Pu-Dung-Hsin District, Shang-Hai City, China
TEL : 86-21-5895-7671 ~ 4 FAX : 86-21-38950165
GS1332E
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