Pb Free Plating Product ISSUED DATE :2005/03/02 REVISED DATE : GP4435 BVDSS RDS(ON) ID P-CHANNEL ENHANCEMENT MODE POWER MOSFET -30V 20m -9A Description The GP4435 provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effectiveness. Features *Simple Drive Requirement *Lower On-resistance *Fast Switching Package Dimensions D E GAUGE PLANE c A REF. SEATING PLANE b Z L Z SECTION Z - Z b e DIP-8 A A1 A2 b b1 b2 b3 c Millimeter Min. Max. 0.381 2.921 0.356 0.356 1.143 0.762 0.203 0.5334 4.953 0.559 0.508 1.778 1.143 0.356 REF. c1 D E E1 e HE L Millimeter Min. Max. 0.203 0.279 9.017 10.16 6.096 7.112 7.620 8.255 2.540 BSC 10.92 2.921 3.810 Absolute Maximum Ratings Parameter Symbol Ratings Unit Drain-Source Voltage VDS -30 V Gate-Source Voltage VGS 20 V Continuous Drain Current ID @TA=25 -9 A Continuous Drain Current ID @TA=70 -5.8 A -50 A 2.5 W Pulsed Drain Current 1 IDM PD @TA=25 Total Power Dissipation Linear Derating Factor 0.02 Operating Junction and Storage Temperature Range Tj, Tstg -55 ~ +150 Symbol Value Rthj-amb 50 W/ Thermal Data Parameter Thermal Resistance Junction-ambient GP4435 3 Max. Unit /W Page: 1/4 ISSUED DATE :2005/03/02 REVISED DATE : Electrical Characteristics(Tj = 25 Parameter Unless otherwise specified) Symbol Min. Typ. Max. Unit Drain-Source Breakdown Voltage BVDSS -30 - - V Breakdown Voltage Temperature Coefficient BVDSS / Tj - -0.03 - Gate Threshold Voltage VGS(th) -1.0 - -3.0 V VDS=VGS, ID=-250uA gfs - 8.2 - S VDS=-10V, ID=-9A IGSS - - 100 nA VGS= - - -1 uA VDS=-30V, VGS=0 - - -25 uA VDS=-24V, VGS=0 - - 20 - - 35 Forward Transconductance Gate-Source Leakage Current Drain-Source Leakage Current(Tj=25 ) IDSS Drain-Source Leakage Current(Tj=70 ) Static Drain-Source On-Resistance2 RDS(ON) V/ m Test Conditions VGS=0, ID=-250uA Reference to 25 , ID=-1mA 20V VGS=-10V, ID=-9A VGS=-4.5V, ID=-5A Total Gate Charge2 Qg - 26 42 Gate-Source Charge Qgs - 6 - Gate-Drain (“Miller”) Change Qgd - 16 - Td(on) - 14 - Tr - 13 - Td(off) - 70 - Tf - 48 - Input Capacitance Ciss - 1330 2100 Output Capacitance Coss - 580 - Reverse Transfer Capacitance Crss - 160 - Symbol Min. Typ. Max. Unit VSD - - -1.2 V IS=-9A, VGS=0V Reverse Recovery Time Trr - 44 - ns Reverse Recovery Charge Qrr - 70 - nC IS=-9A, VGS=0V dI/dt=100A/ s Turn-on Delay Time2 Rise Time Turn-off Delay Time Fall Time nC ID=-9A VDS=-24V VGS=-4.5V ns VDS=-15V ID=-1A VGS=-10V RG=3.3 RD=15 pF VGS=0V VDS=-25V f=1.0MHz Source-Drain Diode Parameter 2 Forward On Voltage Test Conditions Notes: 1. Pulse width limited by Max. junction temperature. 2. Pulse width 300us, duty cycle 2%. 3. Mounted on Min. copper pad, t GP4435 10sec. Page: 2/4 ISSUED DATE :2005/03/02 REVISED DATE : Characteristics Curve Fig 1. Typical Output Characteristics GP4435 Fig 2. Typical Output Characteristics Fig 3. On-Resistance v.s. Gate Voltage Fig 4. Normalized On-Resistance v.s. Junction Temperature Fig 5. Forward Characteristics of Reverse Diode Fig 6. Gate Threshold Voltage v.s. Junction Temperature Page: 3/4 ISSUED DATE :2005/03/02 REVISED DATE : Fig 7. Gate Charge Characteristics Fig 9. Maximum Safe Operating Area Fig 11. Switching Time Waveform Fig 8. Typical Capacitance Characteristics Fig 10. Effective Transient Thermal Impedance Fig 12. Gate Charge Waveform Important Notice: All rights are reserved. Reproduction in whole or in part is prohibited without the prior written approval of GTM. GTM reserves the right to make changes to its products without notice. GTM semiconductor products are not warranted to be suitable for use in life-support Applications, or systems. GTM assumes no liability for any consequence of customer product design, infringement of patents, or application assistance. Head Office And Factory: Taiwan: No. 17-1 Tatung Rd. Fu Kou Hsin-Chu Industrial Park, Hsin-Chu, Taiwan, R. O. C. TEL : 886-3-597-7061 FAX : 886-3-597-9220, 597-0785 China: (201203) No.255, Jang-Jiang Tsai-Lueng RD. , Pu-Dung-Hsin District, Shang-Hai City, China TEL : 86-21-5895-7671 ~ 4 FAX : 86-21-38950165 GP4435 Page: 4/4