HAMAMATSU R8487

PHOTOMULTIPLIER TUBES
PRELIMINARY DATA
SEPT. 2003
R8486, R8487
For Vacuum Ultraviolet Light Detection
Cs-Te (R8486), Cs-I (R8487) Photocathode, MgF2 Window,
28 mm (1-1/8 Inch) Diameter, 9-stage, Side-on Type
FEATURES
● Sensitivity in the Vacuum Ultraviolet Region
R8486.......................................115 to 320 nm
R8487.......................................115 to 195 nm
● High Quantum Efficiency (at 121.6 nm)
R8486........................................22.5 % (Typ.)
R8487........................................26.0 % (Typ.)
● High Anode Sensitivity
R8486 (at 254 nm).........5.2 × 105 A/W (Typ.)
R8487 (at 121.6 nm)......1.0 × 105 A/W (Typ.)
APPLICATIONS
PMSF0093
● Emission Spectroscopy, etc.
Figure 1: Typical Spectral Response
SPECIFICATIONS
TPMSB0199EA
GENERAL
Parameter
R8486
R8487
Spectral Response
115 to 320 115 to 195
Wavelength
200
130
of Maximum Response
Photocathode Material
Cs-Te
Cs-I
Window Material
MgF2
Minimum Effective Area
8 × 12
Circular-cage
Structure
Dynode
9
Number of Stage
Sb-Cs
Material
Direct
Approx. 4
Anode to Dynode No.9
Interelectrode Anode to
Approx. 6
Capacitances All Other Electrodes
Base
11-pin base JEDEC No. B11-88
Weight
45
Suitable Socket
E678-11A (sold separately)
Operating Ambient Temperature
-30 to +50
Storage Temperature
-30 to +50
Unit
nm
nm
—
—
mm
—
—
—
pF
pF
—
g
—
°C
°C
PHOTOCATHODE RADIANT SENSITIVITY (mA/W)
QUANTUM EFFICIENCY (%)
100
CATHODE
RADIANT
SENSITIVITY
10
1 QUANTUM
EFFICIENCY
R8486
R8487
0.1
0.01
100
200
300
WAVELENGTH (nm)
Subject to local technical requirements and regulations, availability of products included in this promotional material may vary. Please consult with our sales office.
Information furnished by HAMAMATSU is believed to be reliable. However, no responsibility is assumed for possible inaccuracies or omissions. Specifications are
subject to change without notice. No patent rights are granted to any of the circuits described herein. ©2003 Hamamatsu Photonics K.K.
PHOTOMULTIPLIER TUBES R8486, R8487
MAXIMUM RATINGS (Absolute Maximum Values)
Parameter
Supply Voltage
Between Anode and Cathode
Between Anode and Last Dynode
Between Successive Dynodes
Between First Dynode and Cathode
Average Anode Current A
Rating
Unit
1250
250
250
250
0.1
V
V
V
V
V
CHARACTERISTICS (at 25 °C)
Parameter
R8486
R8487
Unit
Quantum Efficiency at 121 nm
22.5
26.0
%
at 254 nm
25.0
—
%
—
1.0 × 105
A/W
5.2 × 105
—
A/W
Cathode Sensitivity
Anode Sensitivity B
Radiant at 121 nm
at 254 nm
1.0 ×
Gain
107
3.9 ×
106
—
Anode Dark Current (After 30 minute storage in darkness) C
1.0
0.1
nA
ENI (Equivalent Noise Input) D at 121 nm
—
1.12 × 10-16
W
—
W
1.09 ×
at 254 nm
10-16
Time Response
Anode Pulse Rise Time E
2.2
2.2
ns
Electron Transit Time F
22
22
ns
1.2
1.2
ns
Transit Time
Spread G
NOTES
A: Averaged over any interval of 30 seconds maximum.
B: Measured with the same light source as Note B and with the voltage
distribution ratio shown in Table 1 below.
Table 1: Voltage Distribution Ratio
Electrode
K Dy1 Dy2 Dy3 Dy4 Dy5 Dy6 Dy7 Dy8 Dy9 P
Distribution
1
1
1
1
1
Ratio
Supply Voltage=1000 V
K: Cathode Dy: Dynode P: Anode
1
1
1
1
1
E: The rise time is the time for the output pulse to rise from 10 % to 90 %
of the peak amplitude when the entire photocathode is illuminated by a
delta function light pulse.
F: The electron transit time is the interval between the arrival of delta
function light pulse at the entrance window of the tube and the time
when the anode output reaches the peak amplitude. In measurement,
the whole photocathode is illuminated.
G: Also called transit time jitter. This is the fluctuation in electron transit
time between individual pulses in the signal photoelectron mode, and
may be defined as the FWHM of the frequency distribution of electron
transit times.
C: Measured with the same supply voltage and voltage distribution ratio
as Note E after removal of light.
D: ENI is an indication of the photon-limited signal-to-noise ratio. It refers
to the amount of light in watts to produce a signal-to-noise ratio of unity in the output of a photomultiplier tube.
ENI =
where
q=
ldb =
g=
∆f =
S=
2q·ldb·g·∆f
S
Electronic charge (1.60 × 10-19 coulomb).
Anode dark current in amperes after 30 minutes storage in darkness.
Gain.
Bandwidth of the system in hertz.
Anode radiant sensitivity in amperes per watt at the
wavelength of interest.
Figure 2: Typical Gain and Anode Radiant Sensitivity
108
Figure 3: Typical Time Response
TPMSB0200EA
TPMSB0004EB
100
108
80
R8486 TYPICAL GAIN
107
R8487 TYPICAL GAIN
40
TRAN
SIT T
106
105
105
R8486 TYPICAL
ANODE SENSITIVITY
(at 254 nm)
104
102
500
700
8
4
103
RISE
TIME
2
102
1500
1000
10
6
104
R8487 TYPICAL
ANODE SENSITIVITY
(at 121.6 nm)
103
IME
20
TIME (ns)
106
GAIN
ANODE RADIANT SENSITIVITY (A/W)
60
107
1
300
500
700
1000
1500
SUPPLY VOLTAGE (V)
SUPPLY VOLTAGE (V)
Figure 4: Dimensional Outline and Basing Diagram (Unit: mm)
Figure 5: Socket E678-11A (Sold Separately) (Unit: mm)
49
20 MAX.
38
33
20 MAX.
3.5
FACE PLATE
5
28.5 ± 1.5
8 MIN.
MgF2 WINDOW
29
5
7
PHOTOCATHODE
80 MAX.
DY7
8 DY8
DY3 3
94 MAX.
49.0 ± 2.5
DY4 4
DY2
9 DY9
2
DY1
4
DY6
6
18
14 MIN.
DY5
10 P
1
TACCA0064EA
11
K
DIRECTION OF LIGHT
32.2 ± 0.5
11 PIN BASE
JEDEC No. B11-88
TPMSA0042EB
NOTE: There is a 2 mm diameter hole to exhaust inner air on the plastic base.
PHOTOMULTIPLIER TUBES R8486, R8487
Warning—Personal Safety Hazards
Electrical Shock—Operating voltages applies to this
device present a shock hazard.
WEB SITE http://www.hamamatsu.com
HAMAMATSU PHOTONICS K.K., Electron Tube Center
314-5, Shimokanzo, Toyooka-village, Iwata-gun, Shizuoka-ken, 438-0193, Japan, Telephone: (81)539/62-5248, Fax: (81)539/62-2205
U.S.A.: Hamamatsu Corporation: 360 Foothill Road, P. O. Box 6910, Bridgewater. N.J. 08807-0910, U.S.A., Telephone: (1)908-231-0960, Fax: (1)908-231-1218 E-mail: [email protected]
Germany: Hamamatsu Photonics Deutschland GmbH: Arzbergerstr. 10, D-82211 Herrsching am Ammersee, Germany, Telephone: (49)8152-375-0, Fax: (49)8152-2658 E-mail: [email protected]
France: Hamamatsu Photonics France S.A.R.L.: 8, Rue du Saule Trapu, Parc du Moulin de Massy, 91882 Massy Cedex, France, Telephone: (33)1 69 53 71 00, Fax: (33)1 69 53 71 10 E-mail: [email protected]
United Kingdom: Hamamatsu Photonics UK Limited: 2 Howard Court, 10 Tewin Road Welwyn Garden City Hertfordshire AL7 1BW, United Kingdom, Telephone: 44-(0)1707-294888, Fax: 44(0)1707-325777 E-mail: [email protected]
North Europe: Hamamatsu Photonics Norden AB: Smidesvägen 12, SE-171-41 SOLNA, Sweden, Telephone: (46)8-509-031-00, Fax: (46)8-509-031-01 E-mail: [email protected]
Italy: Hamamatsu Photonics Italia: S.R.L.: Strada della Moia, 1/E, 20020 Arese, (Milano), Italy, Telephone: (39)02-935 81 733, Fax: (39)02-935 81 741 E-mail: [email protected]
TPMS1070E02
OCT. 2003 IP