PHOTOMULTIPLIER TUBE R1464 High Anode Sensitivity at Low Supply Voltage 19mm (3/4 Inch) Diameter, 10 Stage, Head-On Type 185 to 850nm Response Multialkali Photocathode The Hamamatsu R1464 is a 19mm (3/4") diameter, head-on type photomultiplier tube having a multialkali photocathode designed for use in UV to near IR spectrophotometers and other analysis equipments where wide range response and high gain are of importance. The R1464 exhibits a high anode sensitivity at relatively low supply voltage by virtue of improvement in secondary emitting surface, compared with the Hamamatsu R663 photomultiplier tube which has the same spectral response characteristic and mechanical specifications as the R1464. FEATURES High Anode Sensitivity Radiant (420nm) .................................. 5.1 × 104 A/W at 1000V Luminous .................................................... 120 A/lm at 1000V High Quantum Efficiency (290nm) ........................................ 19% Wide Spectral Response ........................................ 185 to 850nm Low Anode Dark Current ..................................... 10 nA at 1000V APPLICATIONS UV to Near IR Spectrophotometers Laser Detection Systems Photon Counting Systems GENERAL Parameter Spectral Response Wavelength of Maximum Response Material Photocathode Minimum Useful Size Material Window Shape Secondary Emitting Surface Dynode Structure Number of Stages Direct Interelectrode Anode to Last Dynode Capacitances (Approx.) Anode to All Other Electrodes Base Weight Suitable Socket Suitable Socket Assembly Description/Value 185 to 850 420 Multialkali 15 UV glass Plano-plano Multialkali Linear focused 10 1.7 3.5 12 pin glass base 14 E678-12D (supplied) E974-05 (option) Unit nm nm — mm dia. — — — — — pF pF — g — — MAXIMUM RATINGS (Absolute Maximum Values) Parameter Between Anode and Cathode Supply Voltage Between Anode and Last Dynode Average Anode Current (Note 1) Average Cathode Current (Note 1) Ambient Temperature Value 1250 250 0.1 100 -80 to +50 Unit Vdc Vdc mA nA/cm2 °C Subject to local technical requirements and regulations, availability of products included in this promotional material may vary. Please consult with our sales office. Information furnished by HAMAMATS U is believed to be reliable. However, no responsibility is assumed for possible inaccuracies or omissions. Specifications are subject to change without notice. No patent rights are granted to any of the circuits described herein. © 1998 Hamamatsu Photonics K.K. PHOTOMULTIPLIER TUBE R1464 CHARACTERISTICS (at 25°C) Parameter Luminous (Note 3) Radiant at 350nm Anode Sensitivity (Note 2) at 420nm at 633nm Luminous (Note 4) Radiant at 350nm at 420nm Cathode Sensitivity at 633nm Quantum Efficiency at 290nm Red/White Ratio (Note 5) Gain (Note 2) Anode Dark Current (Note 2) After 30 minute storage in the dark ENI (Equivalent Noise Input) (Note 6) Anode Pulse Rise Time (Note 2, 7) Time Response Electron Transit Time (Note 2, 8) NOTES 1: Averaged over any interval of 30 seconds maximum. 2: The Voltage distribution ratio is shown in Table 1 below. 3: The light source is a tungsten filament lamp operated at a distribution temperature of 2856K. The light input is 0.1 micro-lumen. 4: Under the same conditions as Note 3 except that the light input is 10-2 lumen and 150 volts are applied between cathode and all other electrode connected together as anode. 5: Red/White Ratio is quotient of the cathode current measured using a red filter (Toshiba R-68) interposed between the light source and the tube by the cathode current measured with the filter removed under the same conditions as Note 4. 6: ENI is an indication of photon limited signal-to-noise ratio. It refers to the amount of light in watts to produce a signal-to-noise ratio in unity in the output of a photomultiplier tube. In this catalog the value of peak wavelength is described. ENI is given by the following formula: Min. 30 — — — 80 — — — — 0.15 — — — — — Typ. 120 4.9 × 104 5.1 × 104 1.9 × 104 120 49 51 19 19 0.2 1 × 106 4 7 × 10-16 2.5 27 Unit A/lm A/W A/W A/W µA/lm mA/W mA/W mA/W % — — nA W ns ns Max. — — — — — — — — — — 20 — — — 2q•ldb•G•∆f S where q = Elementary charge (1.60 × 10-19 coulomb) ldb = PMT anode dark current (after 30 minute storage) in amperes G = PMT gain ∆f = Bandwidth of the system in hertz. In this catalog, 1 Hz bandwidth is used. S = Anode radiant sensitivity in amperes per watt at the wavelength of peak response. 7: The rise time is the time for the output pulse to rise from 10% to 90% of the peak amplitude when the entire photocathode is illuminated by a delta function light pulse. 8: The electron transit time is the interval between the arrival of a delta function light pulse at the entrance window of the tube and the time the output pulse reaches the peak amplitude. In measurement the entire photocathode is illuminated. ENI = Table 1: VOLTAGE DISTRIBUTION RATIO Electrodes K Dy1 Dy2 Dy3 Dy4 Dy5 Dy6 Dy7 Dy8 Dy9 Dy10 Distribution Ratio 1.5 1 1 1 1 1 1 1 1 1 1 Supply Voltage: 1000Vdc, K: Cathode, Dy: Dynode, P: Anode Figure 2: Anode Sensitivity and Gain Characteristics 0.01 200 400 600 800 WAVELENGTH (nm) 1000 105 100 TIV ITY 104 E SE NS I TIV ITY NS I SE DE AL AN O 101 OD TY PI CA LG AI N 102 AN 103 M 0.1 106 PI C 1 103 MU QUANTUM EFFICIENCY 107 TY 10 ANODE LUMINOUS SENSITIVITY (A/lm) CATHODE RADIANT SENSITIVITY (mA/W) QUANTUM EFFICIENCY (%) CATHODE RADIANT SENSITIVITY TPMHB0537EA 10-1 10-2 200 102 300 500 700 SUPPLY VOLTAGE (V) 1000 101 1500 GAIN 104 NI TPMHB0536EA 100 MI Figure 1: Typical Spectral Response P Figure 3: Typical Time Response Figure 4: Typical Temperature Coefficient of Anode Sensitivity TPMHB0538EA TPMHB0539EA +1.5 100 80 +1.0 TEMPERATURE COEFFICIENT (%/°C) 200 60 TRA TIME (ns) 40 NSIT TIM E 20 10 8 6 RISE 4 TIME +0.5 0 -0.5 -1.0 2 1 300 500 700 1000 1500 SUPPLY VOLTAGE (V) TPMHB0540EA 10 DARK CURRENT (nA) 1 0.1 0.01 -40 -20 0 +20 TEMPERATURE (°C) 200 400 600 800 WAVELENGTH (nm) Figure 5: Typical Temperature Characteristic of Dark Current (After 30 minute storage) 0.001 -1.5 +40 1000 PHOTOMULTIPLIER TUBE R1464 Figure 6: Dimensional Outline (Unit: mm) Socket (E678-12L) 18.6 ± 0.7 FACEPLATE 15MIN. 35 28.6 2- 3.2 13 2-R4 DY8 7 DY6 8 9 DY4 10 DY2 DY7 3 11 2 1 18 K 2 DY1 (8) SHORT PIN 2 DY3 12 10.5 9.5 3.3 3.7 88 ± 2 DY9 4 DY5 360° 13 9 (23.6) DY10 6 5 7 P 6.7 PHOTOCATHODE 13 13MAX. 12 PIN BASE 18 TPMHA0434EA TACCA0047EA Figure 7: Optional Socket Assembly E974-13 (Unit: mm) The E974-13 is socket assembly specifically designed for 3/4 inch diameter, 10 stage, head-on type photomultiplier tubes having a 12-pin glass base. It contains a voltage-divider network potted with silicone rubber, thus eliminating troublesome soldering for making up the divider network. PMT P SOCKET PIN No. DY10 6 DY9 4 DY8 7 DY7 3 DY6 8 DY5 2 DY4 9 DY3 1 DY2 10 DY1 12 23.0 ± 0.2 17.4 ± 0.2 SIGNAL GND SIGNAL OUTPUT RG-174/U (BLACK) 5 R11 C3 R10 C2 R9 C1 POWER SUPPLY GND (BLACK) AWG22 R7 43.0 ± 0.5 47.5 ± 1.0 R8 R6 HOUSING (INSULATOR) R1 : 510kΩ R2 to R11 : 330kΩ C1 to C3 : 0.01µF R5 450 ± 10 R4 POTTING COMPOUND R3 R2 R1 K 11 -HV AWG22 (VIOLET) TACCA0099EA Warning - Personal Safety Hazards Electrical Shock — Operating voltage applied to this device presents shock hazard. HAMAMATSU PHOTONICS K.K., Electoron Tube Center 314-5, Shimokanzo, Toyooka-village, Iwata-gun, Shizuoka-ken, 438-0193, Japan, Telephone: (81)539/62-5248, Fax: (81)539/62-2205 U.S.A.: Hamamatsu Corporation: 360 Foothill Road, P. O. Box 6910, Bridgewater. N.J. 08807-0910, U.S.A., Telephone: (1)908-231-0960, Fax: (1)908-231-1218 Germany: Hamamatsu Photonics Deutschland GmbH: Arzbergerstr. 10, D-82211 Herrsching am Ammersee, Germany, Telephone: (49)8152-375-0, Fax: (49)8152-2658 France: Hamamatsu Photonics France S.A.R.L.: 8, Rue du Saule Trapu, Parc du Moulin de Massy, 91882 Massy Cedex, France, Telephone: (33)1 69 53 71 00, Fax: (33)1 69 53 71 10 United Kingdom: Hamamatsu Photonics UK Limited: Lough Point, 2 Gladbeck Way, Windmill Hill, Enfield, Middlesex EN2 7JA, United Kingdom, Telephone: (44)181-367-3560, Fax: (44)181-367-6384 North Europe: Hamamatsu Photonics Norden AB: Färögatan 7, S-164-40 Kista Sweden, Telephone: (46)8-703-29-50, Fax: (46)8-750-58-95 Italy: Hamamatsu Photonics Italia: S.R.L.: Strada della Moia, 1/E, 20020 Arese, (Milano), Italy, Telephone: (39)02-935 81 733, Fax: (39)02-935 81 741 TPMH1217E01 AUG. 1998