HAMAMATSU R8900U-00-C12

POSITION SENSITIVE
PHOTOMULTIPLIER TUBES
R8900-00-C12, R8900U-00-C12
FEATURES
■ 6 (X) + 6 (Y) Cross Plate Anode
■ High Spatial Resolution
■ Wide Effective Area
APPLICATIONS
■ Animal PET (Positron Emission Tomography)
■ Compact Gamma Camera
■ Scintillation Mammography
Left: R8900-00-C12, Right: R8900U-00-C12
GENERAL
Parameter
Spectral Response
Wavelength of Maximum Response
Material
Photocathode
Minimum Effective Area
Material
Window
Thickness
Structure
Dynode
Number of Stages
Anode
Weight
Suitable Socket
Operating Ambient Temperature
Storage Temperature
Description / Value
300 to 650
420
Bialkali
23.5 × 23.5
Borosilicate glass
0.8
Metal channel dynode
11
6 (X) + 6 (Y) Cross plate anode
Approx. 28 (U Type: Approx. 38)
E678-32B (sold separately)
-80 to +50 (U Type: -30 to +50)
-80 to +50 (U Type: -30 to +50)
Unit
nm
nm
—
mm
—
mm
—
—
—
g
—
°C
°C
Value
1000
0.1
Unit
V
mA
MAXIMUM RATINGS (Absolute Maximum Values)
Parameter
Supply Voltage
Between Anode and Cathode
Average Anode Current in Total
CHARACTERISTICS (at 25 °C)
Parameter
Luminous (2856 K)
Quantum Efficiency at 420 nm
Blue Sensitivity Index (CS 5-58)
Luminous (2856 K)
Cathode Sensitivity
Anode Sensitivity
Gain
Anode Dark Current in Total of Anodes
(after 30 min storage in darkness)
Anode Pulse Rise Time
Electron Transit Time
Time Response
Transit Time Spread (FWHM)
Min.
50
—
7.5
15
—
Typ.
85
25
10
60
0.7 × 106
Max.
—
—
—
—
—
Unit
µA/lm
%
—
A/lm
—
—
2
10
nA
—
—
—
2.2
11.9
0.75
—
—
—
ns
ns
ns
NOTE: Anode characteristics are measured with the voltage distribution ratio shown below.
VOLTAGE DISTRIBUTION RATIO AND SUPPLY VOLTAGE
Electrodes
Ratio
K
G
0.5
Dy1 Dy2 Dy3 Dy4 Dy5 Dy6 Dy7 Dy8 Dy9 Dy10 Dy11
P
1
1
1
1
0.5
1.5
2
1
1
1
1
1
Supply Voltage: 800 V, K: Cathode, G: Grid, Dy: Dynode, P: Anode
Subject to local technical requirements and regulations, availability of products included in this promotional material may vary. Please consult with our sales office.
Information furnished by HAMAMATSU is believed to be reliable. However, no responsibility is assumed for possible inaccuracies or omissions. Specifications are
subject to change without notice. No patent rights are granted to any of the circuits described herein. ©2006 Hamamatsu Photonics K.K.
POSITION SENSITIVE PHOTOMULTIPLIER TUBES
R8900-00-C12, R8900U-00-C12
Figure 1: Typical Spectral Response
108
CATHODE
RADIANT
SENSITIVITY
TPMHB0671EC
10-4
107
10-5
10
QUANTUM
EFFICIENCY
106
10-6
105
10-7
1
104
10-8
ANODE DARK CURRENT
IN TOTAL OF ANODES
103
10-9
102
10-10
0.1
0.01
200
300
400
500
600
700
101
400
800
500
Figure 3: Spatial Resolution
X-Axis
100
PX5
PX4
PX3
PX2
RELATIVE OUTPUT (%)
RELATIVE OUTPUT (%)
PX6
PX1
40
TPMHB0762EA
PY6
PY5
PY4
PY3
PY2
PY1
20
25
60
40
20
20
0
0
5
10
15
20
25
30
POSITION (mm)
TPMHB0763EA
PX6
(PY6)
1
0.5
0
PX1
(PY1)
PX-ANODES
PY-ANODES
-1
-1.5
-15
-10
-5
0
5
10
15
SUPPLY VOLTAGE : -800 V
LIGHT SOURCE
: TUNGSTEN LAMP
SPOT DIAMETER : 1 mm
Figure 4: Position Response Using PX/PY Anodes
-0.5
0
POSITION (mm)
SUPPLY VOLTAGE : -800 V
LIGHT SOURCE
: TUNGSTEN LAMP
SPOT DIAMETER : 1 mm
* Output of each anode under a light spot scanning at a center.
CALCULATED POSITION
10-11
900 1000
80
60
1.5
800
Y-Axis
TPMHB0761EA
80
0
700
SUPPLY VOLTAGE (V)
WAVELENGTH (nm)
100
600
ANODE DARK CURRENT (A)
GAIN
GAIN
CATHODE RADIANT SENSITIVITY (mA/W)
QUANTUM EFFICIENCY (%)
100
Figure 2: Typical Gain and Anode Dark Current
TPMHB0670EB
5
INCIDENT POSITION (mm)
SUPPLY VOLTAGE: -800 V
LIGHT SOURCE : TUNGSTEN LAMP
WAVELENGTH: 400 nm
SPOT DIAMETER: 1 mm
SCAN PITCH
: 1 mm
10
15
30
Figure 5: Positioning Histogram Example
TPMHB0764EA
row 1
(PX1)
Positioning histogram profile for row 5 (left: column 1)
TPMHB0765EA
row 10
(PX6)
column 1
(PY6)
column 10
(PY1)
Positioning histogram
of a 10 × 10 array of
2 mm × 2 mm × 20 mm
BGO elements for 511 keV
γ-rays.
Positioning histogram profile for column 5 (left: row 10)
Figure 6: R8900-00-C12 Dimensional Outline and Basing Diagram (Unit: mm)
Basing Diagram
5 MAX.
5 MAX.
0.8
2.5 MAX.
TOP VIEW
GUIDE
MARK
25.7 ± 0.4
G
K
45° ± 10°
Dy2
SIDE VIEW
Dy4
Dy6
34- 1.5
CUT
(IC) Dy1 Dy3 Dy5 Dy7 Dy9 Dy11
CUT
(IC)
2.54 PITCH
2.54
1.2 MAX.
25- 0.45
PHOTOCATHODE
4-R3
7.0 ± 0.5
25.5 ± 0.5
+0
26.2 - 0.5
23.5
27.2 ± 0.5
10.16
Dy8
Dy10
BOTTOM VIEW
CUT
(IC)
PX1
1 2 3 4 5 6 7 8 9
10
32
31
11
12
30
29
13
28
14
CUT
CUT
(IC)
(IC)
27
15
26
16
33
34
25 24 23 22 21 20 19 18 17
PX2
PX3
PY1
PX4
PX5
PX6
CUT PY6 PY5 PY4 CUT PY3 PY2 CUT CUT
K : Photocathode
(IC)
(IC)
(IC) (IC)
Dy : Dynode (Dy1-Dy11)
P : Anode (PX1-PX6)
BOTTOM VIEW
(PY1-PY6)
Basing Diagram
G : Grid
IC : Internal Connection (Do not use)
TPMHA0523EA
Figure 7: R8900U-00-C12 Dimensional Outline and Basing Diagram (Unit: mm)
(R8900-00-C12 with an Insulation Cover)
Basing Diagram
+0
PHOTOCATHODE
TOP VIEW
4.4 ± 0.7
GUIDE CORNER
G
K
Dy2
Dy4
INSULATION
COVER
SIDE VIEW
CUT Dy1 Dy3 Dy5 Dy7 Dy9 Dy11
CUT
2.54 PITCH
Dy6
25- 0.45
4-R3
26.2 ± -0.5
30.0 ± 0.5
4-R1
4 MAX.
12.0 ± 0.5
29.0 ± 0.5
0.6 ± 0.4
23.5
Dy8
BOTTOM VIEW
Dy10
PX1
1 2 3 4 5 6 7 8 9
10
32
31
11
12
30
29
13
28
14
27
15
26
16
25 24 23 22 21 20 19 18 17
CUT
CUT
K : Photocathode
Dy : Dynode (Dy1-Dy11)
P : Anode (PX1-PX6)
(PY1-PY6)
G : Grid
PX2
PX3
PY1
PX4
PX5
PX6
PY6 PY5 PY4 CUT PY3 PY2 CUT
CUT
BOTTOM VIEW
Basing Diagram
TPMHA0524EC
POSITION SENSITIVE PHOTOMULTIPLIER TUBES
R8900-00-C12, R8900U-00-C12
[ACCESSORIES] (Unit: mm)
● Socket E678-32B SOLD SEPARATELY
● D Type Socket Assembly E7514 SOLD SEPARATELY
22.86
4.45 2.92
PIN No. 1
SIGNAL GND
25.4 ± 0.5
PX6
2.54
20.32
12.7
20.32
0.51
12.7
PX5
PY5
PX4
15.0 ± 0.5
22.86
25.4 ± 0.5
PY6
POM
HOUSING
PY4
PX3
PY3
PX2
1.57
TACCA0094ED
450
PY2
PX1
16
PX6
24
PY6
15
PX5
23
PY5
14
PX4
22
12
PY4 SIGNAL OUTPUT
: 0.8D-QEV (GRAY)
PX3
20
PY3
11
PX2
19
PY2
10
PX1
PY1
13
PY1
DY11
8
DY10
27
DY9
7
DY8
28
DY7
6
DY6
29
DY5
5
DY4
30
DY3
4
DY2
31
R18 R14
C3
R17 R13
C2
R16 R12
C1
R11
PX2
PX1
-H.V
: RG-174/U (RED)
POTTING
COMPOUND
GUIDE MARK
R10
PY1 PX4
PX5
PX3
PX6
R9
PY2
PY3
R8
R1, R14: 110 kΩ
R2: 330 kΩ
R3 to R13: 220 kΩ
R15: 1 MΩ
R16 to R18: 51 Ω
C1 to C3: 10 nF
R7
PY4
PY5
PY6
R6
R5
R4
R3
DY1
G
K
3
R2
1
R15
R1
32
-H.V
: RG-174/U (RED)
POWER
SUPPLY GND
In case of using PMT with E7514, PMT must be operated within 0 °C to 50 °C
(Storage temperature for E7514 only: -15 °C to +60 °C)
TACCA0236EB
WARNING ~ High Voltage ~
The product is operated at high voltage potential. Further, the metal housing of the product is connected to the photocathode
(potential) so that it becomes a high voltage potential when the product is operated at a negative high voltage (anode grounded).
Accordingly, extreme safety care must be taken for the electrical shock hazard to the operator or the damage to the other instruments.
* PATENT: USA: 5410211 and other(9), GBR: 551767 and other(9), DEU: 69209809 and other(9), FRA: 551767 and other(9), JPN: 3078905 and other(9)
WEB SITE www.hamamatsu.com
HAMAMATSU PHOTONICS K.K., Electron Tube Division
314-5, Shimokanzo, Iwata City, Shizuoka Pref., 438-0193, Japan, Telephone: (81)539/62-5248, Fax: (81)539/62-2205
U.S.A.: Hamamatsu Corporation: 360 Foothill Road, P. O. Box 6910, Bridgewater. N.J. 08807-0910, U.S.A., Telephone: (1)908-231-0960, Fax: (1)908-231-1218 E-mail: [email protected]
Germany: Hamamatsu Photonics Deutschland GmbH: Arzbergerstr. 10, D-82211 Herrsching am Ammersee, Germany, Telephone: (49)8152-375-0, Fax: (49)8152-2658 E-mail: [email protected]
France: Hamamatsu Photonics France S.A.R.L.: 19, Rue du Saule Trapu, Parc du Moulin de Massy, 91882 Massy Cedex, France, Telephone: (33)1 69 53 71 00, Fax: (33)1 69 53 71 10 E-mail: [email protected]
United Kingdom: Hamamatsu Photonics UK Limited: 2 Howard Court, 10 Tewin Road Welwyn Garden City Hertfordshire AL7 1BW, United Kingdom, Telephone: 44-(0)1707-294888, Fax: 44(0)1707-325777 E-mail: [email protected]
North Europe: Hamamatsu Photonics Norden AB: Smidesvägen 12, SE-171-41 SOLNA, Sweden, Telephone: (46)8-509-031-00, Fax: (46)8-509-031-01 E-mail: [email protected]
TPMH1299E01
Italy: Hamamatsu Photonics Italia: S.R.L.: Strada della Moia, 1/E, 20020 Arese, (Milano), Italy, Telephone: (39)02-935 81 733, Fax: (39)02-935 81 741 E-mail: [email protected]
OCT. 2006 IP