HAMAMATSU R446

PHOTOMULTIPLIER TUBE
R446
Multialkali Photocathode Sensitive to 870 nm
28 mm (1-1/8 Inch) Diameter, 9-Stage, Side-On Type
The R446 features high quantum efficiency, high current
amplification, good S/N ratio and wide spectral response
from UV to near infrared. The R446 employs a UV-transmitting glass envelope for UV sensitivity extension.
The R446 is well suited for use in broad-band spectrophotometers, atomic absorption spectrophotometers,
chromatographs, NOx analyzers and other precision photometric instruments.
FEATURES
●Wide Spectral Response ......................... 185 nm to 870 nm
●Cathode Sensitivity
Luminous ......................................................... 120 µA/lm
Radiant at 330 nm ............................................. 44 mA/W
●Anode Sensitivity (at 1000 V)
Luminous ........................................................... 600 A/lm
Radiant at 330 nm ...................................... 2.2 × 105 A/W
●Low Drift and Hysteresis
Figure 1: Typical Spectral Response
SPECIFICATIONS
TPMSB0090EB
100
CATHODE RADIANT
SENSITIVITY
Parameter
Description/Value
185 to 870
Spectral Response
330
Wavelength of Maximum Response
MateriaI
Multialkali
Photocathode
Minimum Effective Area
8 × 24
UV glass
Window Material
Secondary Emitting Surface
Multialkali
Structure
Circular-cage
Dynode
Number of Stages
9
4
Direct Interelectrode Anode to Last Dynode
6
Anode to All Other Electrodes
Capacitances
Base
11-pin base JEDEC No. B11-88
Weight
Approx. 45
Operating Ambient Temperature
-30 to +50
Storage Temperature
-30 to +50
SuitabIe Socket
E678–11A (Sold Separately)
E717–63 (Sold Separately)
SuitabIe Socket Assembly
E717–74 (Sold Separately)
Unit
nm
nm
—
mm
—
—
—
—
pF
pF
—
g
°C
°C
—
CATHODE RADIANT SENSITIVITY (mA/W)
QUANTUM EFFICIENCY (%)
GENERAL
10
1
QUANTUM
EFFICIENCY
0.1
0.01
100 200 300 400 500 600 700 800 900 1000
—
WAVELENGTH (nm)
Subject to local technical requirements and regulations, availability of products included in this promotional material may vary. Please consult with our sales office.
Information furnished by HAMAMATSU is believed to be reliable. However, no responsibility is assumed for possible inaccuracies or omissions. Specifications are
subject to change without notice. No patent rights are granted to any of the circuits described herein. ©2006 Hamamatsu Photonics K.K.
PHOTOMULTIPLIER TUBES R446
MAXIMUM RATINGS (Absolute Maximum Values)
Parameter
Between Anode and Cathode
Supply Voltage
Between Anode and Last Dynode
Average Anode Current A
Value
1250
250
0.1
Unit
V
V
mA
CHARACTERISTlCS (at 25 °C)
Parameter
Quantum Efficiency
(at Peak Wavelength)
Luminous B
at 194 nm
at 254 nm
Radiant
at 330 nm
at 633 nm
at 852 nm
Red/White Ratio C
Blue Sensitivity Index D
Luminous E
at 194 nm
at 254 nm
Radiant
at 330 nm
at 633 nm
at 852 nm
Cathode Sensitivity
Anode Sensitivity
Min.
Typ.
16.7
(at 320 nm)
120
9.0
25
44
17
0.25
0.25
6.0
600
4.5 × 104
1.3 × 105
2.2 × 105
8.5 × 104
1.3 × 103
5.0 × 106
3
3.1 × 10-16
2.2
22
0.1
1.0
—
80
—
—
—
—
—
0.1
—
100
—
—
—
—
—
—
—
—
—
—
—
—
Gain E
Anode Dark Current F (After 30 min Storage in Darkness)
ENI (Equivalent Noise Input) H
Anode Pulse Rise Time I
Time Response E
Electron Transit Time J
Light Hysteresis
Anode Current Stability K
Voltage Hysteresis
Max.
Unit
—
%
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
50
—
—
—
—
—
µA/lm
mA/W
mA/W
mA/W
mA/W
mA/W
—
—
A/lm
A/W
A/W
A/W
A/W
A/W
—
nA
W
ns
ns
%
%
NOTES
A: Averaged over any interval of 30 seconds maximum.
B: The light source is a tungsten filament lamp operated at a distribution
temperature of 2856K. Supply voltage is 100 V between the cathode and
all other electrodes connected together as anode.
C: Red/White ratio is the quotient of the cathode current measured using a red
filter (Toshiba R-68) interposed between the light source and the tube by
the cathode current measured with the filter removed under the same
conditions as Note B.
D: The value is cathode output current when a blue filter (Corning CS 5-58
polished to 1/2 stock thickness) is interposed between the light source and
the tube under the same condition as Note B.
E: Measured with the same light source as Note B and with the voltage
distribution ratio shown in Table 1 below.
Table 1:Voltage Distribution Ratio
Distribution
Ratio
K
Dy1 Dy2 Dy3 Dy4 Dy5 Dy6 Dy7 Dy8 Dy9
1
1
1
1
1
SuppIy Voltage: 1000 V, K: Cathode,
1
1
1
Dy: Dynode,
1
P
1
2q.ldb.G.∆f
S
where
q = Electronic charge (1.60 × 10-19 coulomb).
ldb = Anode dark current(after 30 minute storage) in amperes.
G = Gain.
∆f = Bandwidth of the system in hertz. 1 hertz is used.
S = Anode radiant sensitivity in amperes per watt at the wavelength of peak response.
I: The rise time is the time for the output pulse to rise from 10 % to 90 % of the
peak amplitude when the entire photocathode is illuminated by a delta
function light pulse.
J: The electron transit time is the interval between the arrival of delta function
light pulse at the entrance window of the tube and the time when the anode
output reaches the peak amplitude. In measurement, the whole photocathode is illuminated.
K: Hysteresis is temporary instability in anode current after light and voltage
are applied.
P: Anode
F: Measured with the same supply voltage and voltage distribution ratio as
Note E after removal of light.
G:Measured at a supply voltage adjusted to provide an anode sensitivity of
100 A/lm.
H: ENI is an indication of the photon-limited signal-to-noise ratio. It refers to
the amount of light in watts to produce a signal-to-noise ratio of unity in the
output of a photomultiplier tube.
ANODE
CURRENT
Electrode
ENI =
l max.
li
l min.
TIME
0
5
6
7 (minutes)
TPMSB0002EA
Hysteresis =
lmax.
lmin.
li
× 100 (%)
(1)Light Hysteresis
The tube is operated at 750 V with an anode current of 1 µA for
5 minutes. The light is then removed from the tube for a minute. The tube is
then re-illuminated by the previous light level for a minute to measure the
variation.
Figure 2: Anode Luminous Sensitivity and
Gain Characteristics
105
TPMSB0091EC
((2)Voltage Hysteresis
The tube is operated at 300 V with an anode current of 0.1 µA
for 5 minutes. The light is then removed from the tube and the supply voltage
is quickly increased to 800 V. After a minute, the supply voltage is then
reduced to the previous value and the tube is re-illuminated for a minute to
measure the variation.
Figure 3: Typical Time Response
108
100
80
TPMSB0092EC
107
103
106
102
105
TYPICAL ANODE
SENSITIVITY
101
MINIMUM ANODE
SENSITIVITY
100
10-1
500
700
20
10
8
6
104
RISE TIME
4
103
2
102
1500
1000
TRANSIT TIME
40
TIME (ns)
TYPICAL GAIN
GAIN
ANODE LUMINOUS SENSITIVITY (A/lm)
60
104
1
500
700
SUPPLY VOLTAGE (V)
Figure 5: Typical Temperature Characteristic of Dark Current
(at 1000 V, after 30 min strage in darkness)
TPMSB0093EC
100
TPMSB0094EB
ANODE DARK CURRENT (nA)
800 nm
140
120
ANODE SENSITIVITY (%)
1500
SUPPLY VOLTAGE (V)
Figure 4: Typical Temperature Coefficient of Anode
Sensitivity
160
1000
600 nm
100
400 nm
80
60
40
10
1
0.1
20
0
-30
-20
-10
0
+10
+20
+30
TEMPERATURE (°C)
+40
+50
0.01
-30
-20
-10
0
+10
+20
+30
TEMPERATURE (°C)
+40
+50
PHOTOMULTIPLIER TUBES R446
Figure 6: Dimensional Outline and Basing Diagram (Unit: mm)
Figure 7: Socket (Unit: mm)
Sold Separately
E678-11A
28.5 ± 1.5
49
8 MIN.
38
PHOTOCATHODE
DY6
6
7
8 DY8
5
DY2
9 DY9
2
10 P
1
29
11
K
4
DY1
DIRECTION OF LIGHT
18
80 MAX.
DY7
DY3 3
94 MAX.
49.0 ± 2.5
24 MIN.
DY4 4
33
5
3.5
DY5
Bottom View
(Basing Diagram)
32.2 ± 0.5
11 PIN BASE
JEDEC No. B11-88
TACCA0064EA
TPMSA0008EA
Figure 8: D Type Socket Assembly (Unit: mm) Sold Separately
E717-63
E717-74
HOUSING
(INSULATOR)
10
P
R10
9
DY8
8
DY7
C2
R8
C1
26.0±0.2
4
5
R1 to R10 : 330 kΩ
C1 to C3 : 10 nF
DY4
A
G
2.7
0.7
R5
31.0 ± 0.5
4
R4
HOUSING
(INSULATOR)
POTTING
COMPOUND
DY3
3
DY2
2
DY1
K
1
DY8
8
22.4±0.2
°
10
R2
30°
K
C3
R9
C2
R8
C1
7
DY6
6
DY5
5
R6
R5
DY4
4
DY3
3
DY2
2
DY1
K
1
R1 to R10 : 330 kΩ
C1 to C3 : 10 nF
R4
R3
0.7
R1
-HV
AWG22 (VIOLET)
R10
R7
SIDE VIEW
R3
11
9
DY7
TOP VIEW
2
R6
DY9
32.0±0.5
7
6
SIGNAL
OUTPUT (A)
GND (G)
10
7
DY6
DY5
30.0 +0
-1
R9
SOCKET
PIN No.
P
R7
29.0 ± 0.3
450 ± 10
C3
PMT
14.0±0.5
38.0 ± 0.3
49.0 ± 0.3
DY9
SIGNAL GND
SIGNAL OUTPUT
RG-174/U(BLACK)
POWER SUPPLY GND
AWG22 (BLACK)
26.0±0.2
SOCKET
PIN No.
32.0±0.5
PMT
3.5
33.0 ± 0.3
5
R2
R1
11
-HV (K)
4- 2.8
R13
* "Wiring diagram applies when -HV is supplied."
To supply +HV,connect the pin "G" to+HV, and the pin
"K" to the GND.
BOTTOM VIEW
TACCA0002EH
* Hamamatsu also provides C4900 series compact high voltage power
supplies and C6270 series DP type socket assemblies which incorporate a DC to DC converter type high voltage power supply.
TACCA0277EA
Warning–Personal Safety Hazards
Electrical Shock–Operating voltages applied to this
device present a shock hazard.
WEB SITE www.hamamatsu.com
HAMAMATSU PHOTONICS K.K., Electron Tube Division
314-5, Shimokanzo, Iwata City, Shizuoka Pref., 438-0193, Japan, Telephone: (81)539/62-5248, Fax: (81)539/62-2205
U.S.A.: Hamamatsu Corporation: 360 Foothill Road, P. O. Box 6910, Bridgewater. N.J. 08807-0910, U.S.A., Telephone: (1)908-231-0960, Fax: (1)908-231-1218 E-mail: [email protected]
Germany: Hamamatsu Photonics Deutschland GmbH: Arzbergerstr. 10, D-82211 Herrsching am Ammersee, Germany, Telephone: (49)8152-375-0, Fax: (49)8152-2658 E-mail: [email protected]
France: Hamamatsu Photonics France S.A.R.L.: 19, Rue du Saule Trapu, Parc du Moulin de Massy, 91882 Massy Cedex, France, Telephone: (33)1 69 53 71 00, Fax: (33)1 69 53 71 10 E-mail: [email protected]
United Kingdom: Hamamatsu Photonics UK Limited: 2 Howard Court, 10 Tewin Road Welwyn Garden City Hertfordshire AL7 1BW, United Kingdom, Telephone: 44-(0)1707-294888, Fax: 44(0)1707-325777 E-mail: [email protected]
North Europe: Hamamatsu Photonics Norden AB: Smidesvägen 12, SE-171-41 SOLNA, Sweden, Telephone: (46)8-509-031-00, Fax: (46)8-509-031-01 E-mail: [email protected]
Italy: Hamamatsu Photonics Italia: S.R.L.: Strada della Moia, 1/E, 20020 Arese, (Milano), Italy, Telephone: (39)02-935 81 733, Fax: (39)02-935 81 741 E-mail: [email protected]
TPMS1027E02
JUL. 2006. IP