HAMAMATSU S3901-512F

IMAGE SENSOR
NMOS linear image sensor
S3901/S3904-F series
NMOS linear image sensors with fiber optic windows
NMOS linear image sensors are self-scanning photodiode arrays designed specifically as detectors for multichannel spectroscopy. The scanning
circuit is made up of N-channel MOS transistors, operates at low power consumption and is easy to handle. Each photodiode has a large active
area, high sensitivity yet very low noise, delivering a high S/N even at low light levels.
S3901/S3904-F series are current-output type NMOS linear image sensors with fiber optic windows and feature superior output linearity and wide
dynamic range. The fiber optic windows allow efficient optical coupling to an image device such as image intensifiers suitable for low-light-level
detection.
The photodiodes of S3901-F series have a height of 2.5 mm and are arrayed in a row at a spacing of 50 µm. The photodiodes of S3904-F series
also have a height of 2.5 mm but are arrayed at a spacing of 25 µm. The photodiodes are available in 2 different pixel quantities for each series:
256 (S3901-256F), 512 (S3901-512F, S3904-512F), 1024 (S3904-1024F).
Hamamatsu also provides S3902/S3903-F series having a pixel height of 0.5 mm.
Features
Applications
l Wide active area
Pixel pitch: 50 µm (S3901-F series)
25 µm (S3904-F series)
Pixel height: 2.5 mm
l Low dark current and high saturation charge allow a long
integration time and a wide dynamic range at room temperature
l Excellent output linearity and sensitivity spatial uniformity
l Lower power consumption: 1 mW Max.
l Start pulse and clock pulses are CMOS logic compatible
■ Equivalent circuit
st
1
CLOCK
2
■ Active area structure
DIGITAL SHIFT REGISTER
(MOS SHIFT REGISTER)
END OF SCAN
2.5 mm
START
CLOCK
l Multichannel spectrophotometry
l Image readout system
ACTIVE VIDEO
ACTIVE
PHOTODIODE
b
Vss
a
DUMMY VIDEO
DUMMY DIODE
FIBER OPTIC PLATE
1.0 µm
SATURATION
CONTROL GATE
SATURATION
CONTROL DRAIN
1.0 µm
N TYPE SILICON
KMPDC0020EA
400 µm
OXIDATION SILICON
P TYPE SILICON
S3901-F SERIES: a=50 µm, b=45 µm
S3904-F SERIES: a=25 µm, b=20 µm
KMPDA0131EA
■ Absolute maximum ratings
Parameter
Input pulse (φ1, φ2, φst) voltage
Power consumption *1
Operating temperature *2
Storage temperature
*1: Vφ=5.0 V
*2: No condensation
Symbol
Vφ
P
Topr
Tstg
Value
15
1
-40 to +65
-40 to +85
Unit
V
mW
°C
°C
S3901/S3904-F series
NMOS linear image sensor
■ Shape specifications
Parameter
Number of pixels
Package length
Number of pins
Window material
Weight
S3901-256F
256
31.75
S3901-512F
512
40.6
S3904-512F
512
31.75
22
Fiber optic plate
8.0
S3904-1024F
1024
40.6
22
Fiber optic plate
10.0
8.0
10.0
Unit
mm
g
■ Specifications (Ta=25 °C)
Parameter
Symbol
Pixel pitch
Pixel height
Spectral response range
(10 % of peak)
Peak sensitivity wavelength
Photodiode dark current *3
Photodiode capacitance *3
Saturation exposure *3, *4
Saturation output charge *3
Photo response non-uniformity *5
-
Min.
-
S3901-F series
Typ.
Max.
50
2.5
-
S3904-F series
Typ.
Max.
25
2.5
-
360 to 1000
λ
λp
ID
Cph
Esat
Qsat
PRNU
Min.
-
-
360 to 1000
600
0.2
20
200
50
-
0.6
±5
-
600
0.1
10
200
25
-
Unit
µm
mm
nm
0.3
±5
nm
pA
pF
mlx · s
pC
%
*3: Vb=2.0 V, Vφ=5.0 V
*4: 2856 K, tungsten lamp
*5: 50 % of saturation, excluding the start pixel and last pixel
■ Electrical characteristics (Ta=25 °C)
Parameter
Symbol
Condition
High Vφ1, Vφ2 (H)
Low Vφ1, Vφ2 (L)
High
Vφs (H)
Start pulse (φst) voltage
Low
Vφs (L)
Video bias voltage *6
Vb
Saturation control gate voltage
Vscg
Saturation control drain voltage
Vscd
trφ1,
trφ2
Clock pulse (φ1, φ2) rise / fall time *7
tfφ1, tfφ2
Clock pulse (φ1, φ2) pulse width
tpwφ1, tpwφ2
Start pulse (φst) rise / fall time
trφs, tfφs
Start pulse (φst) pulse width
tpwφs
Start pulse (φst) and clock pulse
tφov
(φ2) overlap
7
Clock pulse space *
X1, X2
Data rate *8
f
Clock pulse (φ1, φ2)
voltage
Video delay time
tvd
50 % of
saturation
*8, *9
Clock pulse (φ1, φ2)
line capacitance
Cφ
5 V bias
Cscg
5 V bias
CV
2 V bias
Saturation control gate (Vscg)
line capacitance
Video line capacitance
S3901-F series
Min.
Typ.
Max.
4.5
5
10
0
0.4
4.5
10
Vφ1
0
0.4
1.5
Vφ - 3.0 Vφ - 2.5
0
Vb
-
S3904-F series
Min.
Typ.
Max.
4.5
5
10
0
0.4
4.5
10
Vφ1
0
0.4
1.5
Vφ - 3.0 Vφ - 2.5
0
Vb
-
Unit
V
V
V
V
V
V
V
-
20
-
-
20
-
ns
200
200
20
-
-
200
200
20
-
-
ns
ns
ns
200
-
-
200
-
-
ns
2000
-
ns
kHz
ns
trf - 20
0.1
120 (-256 F)
2000
-
trf - 20
0.1
150 (-512 F)
-
160 (-512 F)
-
-
200 (-1024 F)
-
ns
-
36 (-256 F)
67 (-512 F)
20 (-256 F)
35 (-512 F)
11 (-256 F)
20 (-512 F)
-
-
50 (-512 F)
100 (-1024 F)
24 (-512 F)
45 (-1024 F)
16 (-512 F)
30 (-1024 F)
-
pF
pF
pF
pF
pF
pF
*6: Vφ is input pulse voltage.
*7: trf is the clock pulse rise or fall time. A clock pulse space of “rise time/fall time - 20 ” ns (nanoseconds) or more should be input
if the clock pulse rise or fall time is longer than 20 ns.
*8: Vb=2.0 V, Vφ=5.0 V
*9: Measured with C7883 driver circuit.
NMOS linear image sensor
■ Spectral response (typical example)
(Ta=25 ˚C)
PHOTO SENSITIVITY (A/W)
0.3
0.2
0.1
0
200
400
600
800
1000
1200
WAVELENGTH (nm)
KMPDB0173EA
■ Output charge vs. exposure
102
(Typ. Vb=2 V, V =5 V, light source: 2856 K)
SATURATION
CHARGE
OUTPUT CHARGE (pC)
101
S3901-F SERIES
100
10–1
S3904-F SERIES
SATURATION
CHARGE
10–2
10–3
10–5
10–4
10–3
10–2
10–1
100
EXPOSURE (lx · s)
KMPDB0099EB
S3901/S3904-F series
NMOS linear image sensor
S3901/S3904-F series
■ Dimensional outlines (unit: mm)
S3901-256F, S3904-512F
5.4 ± 0.2
ACTIVE AREA
25.6 × 2.5
12.8 ± 0.3
5.0 ± 0.2
5.0 ± 0.2
10.4
10.4
6.4 ± 0.3
5.4 ± 0.2
ACTIVE AREA
12.8 × 2.5
S3901-512F, S3904-1024F
PHOTOSENSITIVE
SURFACE
PHOTOSENSITIVE
SURFACE
10.0
40.6
10.0
31.2
9.8
40.0
9.8
3.0 3.0
3.0 3.0
31.75
0.51
0.25
0.51
2.54
0.25
2.54
25.4
10.16
25.4
10.16
KMPDA0094EA
KMPDA0093EA
■ Pin connection
2
1
22
NC
1
2
21
NC
st
3
20
NC
Vss
4
19
NC
Vscg
5
18
NC
NC
6
17
NC
Vscd
7
16
NC
Vss
8
15
NC
ACTIVE VIDEO
9
14
NC
DUMMY VIDEO
10
13
NC
Vsub
11
12
END OF SCAN
Vss, Vsub and NC should be grounded.
KMPDC0056EA
Information furnished by HAMAMATSU is believed to be reliable. However, no responsibility is assumed for possible inaccuracies or omissions.
Specifications are subject to change without notice. No patent rights are granted to any of the circuits described herein. ©2001 Hamamatsu Photonics K.K.
HAMAMATSU PHOTONICS K.K., Solid State Division
1126-1 Ichino-cho, Higashi-ku, Hamamatsu City, 435-8558 Japan, Telephone: (81) 53-434-3311, Fax: (81) 53-434-5184, www.hamamatsu.com
U.S.A.: Hamamatsu Corporation: 360 Foothill Road, P.O.Box 6910, Bridgewater, N.J. 08807-0910, U.S.A., Telephone: (1) 908-231-0960, Fax: (1) 908-231-1218
Germany: Hamamatsu Photonics Deutschland GmbH: Arzbergerstr. 10, D-82211 Herrsching am Ammersee, Germany, Telephone: (49) 08152-3750, Fax: (49) 08152-2658
France: Hamamatsu Photonics France S.A.R.L.: 19, Rue du Saule Trapu, Parc du Moulin de Massy, 91882 Massy Cedex, France, Telephone: 33-(1) 69 53 71 00, Fax: 33-(1) 69 53 71 10
United Kingdom: Hamamatsu Photonics UK Limited: 2 Howard Court, 10 Tewin Road, Welwyn Garden City, Hertfordshire AL7 1BW, United Kingdom, Telephone: (44) 1707-294888, Fax: (44) 1707-325777
North Europe: Hamamatsu Photonics Norden AB: Smidesvägen 12, SE-171 41 Solna, Sweden, Telephone: (46) 8-509-031-00, Fax: (46) 8-509-031-01
Italy: Hamamatsu Photonics Italia S.R.L.: Strada della Moia, 1/E, 20020 Arese, (Milano), Italy, Telephone: (39) 02-935-81-733, Fax: (39) 02-935-81-741
Cat. No. KMPD1003E03
Oct. 2005 DN