HAMAMATSU S3901

IMAGE SENSOR
NMOS linear image sensor
S3901-1024Q, S3904-2048Q
Large active area type with 51.2 mm detection length
NMOS linear image sensors are self-scanning photodiode arrays designed specifically as detectors for multichannel spectroscopy. The scanning
circuit is made up of N-channel MOS transistors, operates at low power consumption and is easy to handle. Each photodiode has a large active
area, high UV sensitivity yet very low noise, delivering a high S/N even at low light levels. The current output type NMOS linear image sensors
also feature excellent output linearity and wide dynamic range. S3901-1024Q uses photodiodes with a height of 2.5 mm, arrayed at a spacing of
50 µm. S3904-2048Q has photodiodes with a height of 2.5 mm, arrayed at a spacing of 25 µm. The photodiode arrays are available in 2 different
pixel quantities, 1024 (S3901-1024Q) and 2048 (S3904-2048Q). Quartz glass is the standard window material.
Features
Applications
l Large active area, long detection length
Pixel pitch: 50 µm (S3901-1024Q)
25 µm (S3904-2048Q)
Pixel height: 2.5 mm
Active area length: 51.2 mm
l High UV sensitivity with good stability
l Low dark current and large saturation charge allow long
integration time and a wide dynamic range at room temperature
l Excellent output linearity and sensitivity spatial uniformity
l Low power consumption: 1 mW Max.
l Start pulse and clock pulses are CMOS logic compatible
Figure 1 Equivalent circuit
DIGITAL SHIFT REGISTER
(MOS SHIFT REGISTER)
END OF SCAN
c
2
ACTIVE VIDEO
ACTIVE
PHOTODIODE
b
Vss
a
SATURATION
CONTROL GATE
SATURATION
CONTROL DRAIN
DUMMY VIDEO
1.0 µm
1
CLOCK
OXIDATION SILICON
DUMMY DIODE
KMPDC0020EA
N TYPE SILICON
1.0 µm
st
Figure 2 Active area structure
400 µm
START
CLOCK
l Multichannel spectrophotometry
l Image readout system
P TYPE SILICON
S3901-1024Q: a=50 µm, b=45 µm, c=2.5 mm
S3904-2048Q: a=25 µm, b=20 µm, c=2.5 mm
KMPDA0124EB
■ Absolute maximum ratings
Parameter
Input pulse (φ1, φ2, φst) voltage
Power consumption *1
Operating temperature *2
Storage temperature
Symbol
Vφ
P
Topr
Tstg
Value
15
1
-40 to +65
-40 to +85
Unit
V
mW
°C
°C
*1: Vφ=5.0 V
*2: No condensation
1
S3901-1024Q, S3904-2048Q
NMOS linear image sensor
■ Shape specifications
Parameter
Number of pixels
Package length
Number of pin
Window material *3
Weight
*3: Fiber optic plate is available.
S3901-1024Q
1024
S3904-2048Q
2048
Unit
mm
g
65.0
22
Quartz
8.5
■ Specifications (Ta=25 °C)
Parameter
Symbol
Min.
-
S3901-1024Q
Typ.
Max.
50
2.5
-
Pixel pitch
Pixel height
Spectral response range
200 to 1000
λ
(10 % of peak)
Peak sensitivity wavelength
600
λp
Photodiode dark current *4
ID
0.2
Photodiode capacitance *4
Cph
20
Saturation exposure *4, *5
Esat
180
Saturation output charge *4
Qsat
50
Photo response non-uniformity *6
PRNU
*4: Vb=2.0 V, Vφ=5.0 V
*5: 2856 K, tungsten lamp
*6: 50 % of saturation, excluding the start pixel and last pixel
S3904-2048Q
Typ.
Max.
25
2.5
-
Min.
-
200 to 1000
0.6
±3
-
600
0.1
10
180
25
-
Unit
µm
mm
nm
0.3
±3
nm
pA
pF
mlx · s
pC
%
■ Electrical characteristics (Ta=25 °C)
Parameter
Symbol
Condition
Clock pulse (φ1, φ2)
voltage
High Vφ1, Vφ2 (H)
Low Vφ1, Vφ2 (L)
High
Vφs (H)
Start pulse (φst) voltage
Low
Vφs (L)
Video bias voltage *7
Vb
Saturation control gate voltage
Vscg
Saturation control drain voltage
Vscd
trφ1,
trφ2
8
Clock pulse (φ1, φ2) rise/fall time *
tfφ1, tfφ2
Clock pulse (φ1, φ2) pulse width
tpwφ1, tpwφ2
Start pulse (φst) rise/fall time
trφs, tfφs
Start pulse (φst) pulse width
tpwφs
Start pulse (φst) and clock pulse
tφov
(φ2) overlap
8
Clock pulse space *
X1, X2
Data rate *9
f
Video delay time
tvd
50 % of
saturation
* 9, * 10
Min.
4.5
0
4.5
0
1.5
-
S3901-1024Q
Typ.
Max.
5
10
0.4
10
Vφ1
0.4
Vφ - 3.0 Vφ - 2.5
0
Vb
-
Min.
4.5
0
4.5
0
1.5
-
Unit
V
V
V
V
V
V
V
-
20
-
-
20
-
ns
200
200
20
-
-
200
200
20
-
-
ns
ns
ns
200
-
-
200
-
-
ns
trf - 20
0.1
-
2000
trf - 20
0.1
-
2000
ns
kHz
-
200
-
-
250
-
ns
-
200
-
pF
-
87
-
pF
-
60
-
pF
Clock pulse (φ1, φ2)
5 V bias
134
Cφ
line capacitance
Saturation control gate (Vscg)
Cscg
5 V bias
63
line capacitance
Video line capacitance
CV
2 V bias
45
*7: Vφ is input pulse voltage (refer to figure 8) .
*8: trf is the clock pulse rise or fall time. A clock pulse space of “rise time/fall time - 20 ” ns
input if the clock pulse rise or fall time is longer than 20 ns (refer to figure 7) .
*9: Vb=2.0 V, Vφ=5.0 V
*10: Measured with C7883 driver circuit.
2
S3904-2048Q
Typ.
Max.
5
10
0.4
10
Vφ1
0.4
Vφ - 3.0 Vφ - 2.5
0
Vb
-
(nanoseconds) or more should be
NMOS linear image sensor
S3901-1024Q, S3904-2048Q
Figure 3 Dimensional outline (unit: mm)
ACTIVE AREA
51.2 × 2.5
15.5
7.75 ± 0.2 7.75 ± 0.2
25.6 ± 0.5
1.3 ± 0.2 *
65.0
3.0
PHOTOSENSITIVE
SURFACE
0.46
25.4
0.25
2.54
48.26
15.24
* Optical distance from the outer surface
of the quartz window to the chip surface
KMPDA0123EA
Figure 4 Pin connection
2
1
22
NC
1
2
21
NC
st
3
20
NC
Vss
4
19
NC
Vscg
5
18
NC
NC
6
17
NC
Vscd
7
16
NC
Vss
8
15
NC
ACTIVE VIDEO
9
14
NC
DUMMY VIDEO
10
13
NC
Vsub
11
12
END OF SCAN
Vss, Vsub and NC should be grounded.
KMPDC0109EA
Terminal
Input or output
φ1, φ2
Input
(CMOS logic compatible)
φst
Input
(CMOS logic compatible)
Vss
-
Vscg
Input
Vscd
Input
Active video
Output
Dummy video
Output
Vsub
End of scan
NC
Output
(CMOS logic compatible)
-
Description
Pulses for operating the MOS shift register. The video data rate is
equal to the clock pulse frequency since the video output signal is
obtained synchronously with the rise of φ2 pulse.
Pulse for starting the MOS shift register operation. The time interval
between start pulses is equal to the signal accumulation time.
Connected to the anode of each photodiode. This should be
grounded.
Used for restricting blooming. This should be grounded.
Used for restricting blooming. This should be biased at a voltage
equal to the video bias voltage.
Video output signal. Connects to photodiode cathodes when the
address is on. A positive voltage should be applied to the video
line in order to use photodiodes with a reverse voltage. When the
amplitude of φ1 and φ2 is 5 V, a video bias voltage of 2 V is
recommended.
This has the same structure as the active video, but is not
connected to photodiodes, so only spike noise is output. This
should be biased at a voltage equal to the active video or left as an
open-circuit when not needed.
Connected to the silicon substrate. This should be grounded.
This should be pulled up at 5 V by using a 10 kΩ resistor. This is a
negative going pulse that appears synchronously with the φ2
timing right after the last photodiode is addressed.
Should be grounded.
3
NMOS linear image sensor
S3901-1024Q, S3904-2048Q
Figure 6 Output charge vs. exposure
Figure 5 Spectral response (typical example)
(Ta=25 ˚C)
0.3
(Typ. Vb=2 V, V =5 V, light source: 2856 K)
2
10
SATURATION
CHARGE
1
OUTPUT CHARGE (pC)
PHOTO SENSITIVITY (A/W)
10
0.2
0.1
100
S3901-1024Q
10–1
SATURATION EXPOSURE
10–2
0
200
400
600
10–3
10–5
1200
1000
800
S3904-2048Q
10–4
10–3
10–2
10–1
100
EXPOSURE (lx · s)
WAVELENGTH (nm)
KMPDB0160EB
KMPDB0149EA
Figure 8 Video bias voltage margin
Figure 7 Timing chart
1
2
V s (H)
V s (L)
V
V
V
V
10
tpw 1
1 (H)
1 (L)
2 (H)
2 (L)
tpw 2
VIDEO BIAS VOLTAGE (V)
st
tpw s
tvd
ACTIVE VIDEO OUTPUT
END OF SCAN
tr s
st
tf s
tr 1
6
RE
CO
MM
EN
D
DE
BIA
X.
S
MA
4
VIDEO BIAS RANGE
2
tf 1
MIN.
1
X1
8
X2
0
tf 2
4
5
6
7
8
10
9
2
CLOCK PULSE AMPLITUDE (V)
t ov
KMPDB0043EA
tr 2
KMPDC0022EA
Information furnished by HAMAMATSU is believed to be reliable. However, no responsibility is assumed for possible inaccuracies or omissions.
Specifications are subject to change without notice. No patent rights are granted to any of the circuits described herein. ©2007 Hamamatsu Photonics K.K.
HAMAMATSU PHOTONICS K.K., Solid State Division
1126-1 Ichino-cho, Higashi-ku, Hamamatsu City, 435-8558 Japan, Telephone: (81) 53-434-3311, Fax: (81) 53-434-5184, www.hamamatsu.com
U.S.A.: Hamamatsu Corporation: 360 Foothill Road, P.O.Box 6910, Bridgewater, N.J. 08807-0910, U.S.A., Telephone: (1) 908-231-0960, Fax: (1) 908-231-1218
Germany: Hamamatsu Photonics Deutschland GmbH: Arzbergerstr. 10, D-82211 Herrsching am Ammersee, Germany, Telephone: (49) 08152-3750, Fax: (49) 08152-2658
France: Hamamatsu Photonics France S.A.R.L.: 19, Rue du Saule Trapu, Parc du Moulin de Massy, 91882 Massy Cedex, France, Telephone: 33-(1) 69 53 71 00, Fax: 33-(1) 69 53 71 10
United Kingdom: Hamamatsu Photonics UK Limited: 2 Howard Court, 10 Tewin Road, Welwyn Garden City, Hertfordshire AL7 1BW, United Kingdom, Telephone: (44) 1707-294888, Fax: (44) 1707-325777
North Europe: Hamamatsu Photonics Norden AB: Smidesvägen 12, SE-171 41 Solna, Sweden, Telephone: (46) 8-509-031-00, Fax: (46) 8-509-031-01
Italy: Hamamatsu Photonics Italia S.R.L.: Strada della Moia, 1/E, 20020 Arese, (Milano), Italy, Telephone: (39) 02-935-81-733, Fax: (39) 02-935-81-741
4
Cat. No. KMPD1049E03
Mar. 2007 DN