IMAGE SENSOR NMOS linear image sensor S3901-1024Q, S3904-2048Q Large active area type with 51.2 mm detection length NMOS linear image sensors are self-scanning photodiode arrays designed specifically as detectors for multichannel spectroscopy. The scanning circuit is made up of N-channel MOS transistors, operates at low power consumption and is easy to handle. Each photodiode has a large active area, high UV sensitivity yet very low noise, delivering a high S/N even at low light levels. The current output type NMOS linear image sensors also feature excellent output linearity and wide dynamic range. S3901-1024Q uses photodiodes with a height of 2.5 mm, arrayed at a spacing of 50 µm. S3904-2048Q has photodiodes with a height of 2.5 mm, arrayed at a spacing of 25 µm. The photodiode arrays are available in 2 different pixel quantities, 1024 (S3901-1024Q) and 2048 (S3904-2048Q). Quartz glass is the standard window material. Features Applications l Large active area, long detection length Pixel pitch: 50 µm (S3901-1024Q) 25 µm (S3904-2048Q) Pixel height: 2.5 mm Active area length: 51.2 mm l High UV sensitivity with good stability l Low dark current and large saturation charge allow long integration time and a wide dynamic range at room temperature l Excellent output linearity and sensitivity spatial uniformity l Low power consumption: 1 mW max. l Start pulse and clock pulses are CMOS logic compatible ■ Equivalent circuit Digital shift register (MOS shift register) End of scan c 2 Active video Active photodiode b Vss a Saturation control gate Saturation control drain Dummy video 1.0 µm 1 Clock Oxidation silicon Dummy diode KMPDC0020EA N type silicon 1.0 µm st ■ Active area structure 400 µm Start Clock l Multichannel spectrophotometry l Image readout system P type silicon S3901-1024Q: a=50 µm, b=45 µm, c=2.5 mm S3904-2048Q: a=25 µm, b=20 µm, c=2.5 mm KMPDA0124EB ■ Absolute maximum ratings Parameter Input pulse (φ1, φ2, φst) voltage Power consumption*1 Operating temperature*2 Storage temperature Symbol Vφ P Topr Tstg Value 15 1 -40 to +65 -40 to +85 Unit V mW °C °C *1: Vφ=5.0 V *2: No condensation 1 S3901-1024Q, S3904-2048Q NMOS linear image sensor ■ Shape specifications Parameter Number of pixels Package length Number of pin Window material*3 Weight *3: Fiber optic plate is available. S3901-1024Q 1024 S3904-2048Q 2048 Unit mm g 65.0 22 Quartz 8.5 ■ Specifications (Ta=25 °C) Parameter Symbol Min. - S3901-1024Q Typ. Max. 50 2.5 - Pixel pitch Pixel height Spectral response range 200 to 1000 λ (10% of peak) Peak sensitivity wavelength 600 λp Photodiode dark current*4 ID 0.2 Photodiode capacitance*4 Cph 20 Saturation exposure*4 *5 Esat 180 Saturation output charge*4 Qsat 50 Photo response non-uniformity*6 PRNU *4: Vb=2.0 V, Vφ=5.0 V *5: 2856 K, tungsten lamp *6: 50% of saturation, excluding the start pixel and last pixel S3904-2048Q Typ. Max. 25 2.5 - Min. - 200 to 1000 0.6 ±3 - 600 0.1 10 180 25 - Unit µm mm nm 0.3 ±3 nm pA pF mlx · s pC % ■ Electrical characteristics (Ta=25 °C) Parameter Symbol C ondition Clock pulse (φ1, φ2) voltage High Vφ1, Vφ2 (H) Low Vφ1, Vφ2 (L) High Vφs (H) Start pulse (φst) voltage Low Vφs (L) Video bias voltage*7 Vb Saturation control gate voltage Vscg Saturation control drain voltage Vscd trφ1, trφ2 C lock p ulse (φ1 , φ2 ) rise /fall tim e*8 tfφ1, tfφ2 Clock pulse (φ1, φ2) pulse width tpwφ1, tpwφ2 Start pulse (φst) rise/fall time trφs, tfφs Start pulse (φst) pulse width tpwφs Start pulse (φst) and clock pulse tφov (φ2) overlap 8 Clock pulse space* X1, X2 Data rate*9 f Video delay time tvd 50 % of saturation *9 Min. 4.5 0 4.5 0 1.5 - S3901-1024Q Typ. Max. 5 10 0.4 Vφ1 10 0.4 Vφ - 3.0 Vφ - 2.5 0 Vb - Min. 4.5 0 4.5 0 1.5 - Unit V V V V V V V - 20 - - 20 - ns 200 200 20 - - 200 200 20 - - ns ns ns 200 - - 200 - - ns trf - 20 0.1 - 2000 trf - 20 0.1 - 2000 ns kHz - 200 - - 250 - ns - 200 - pF - 87 - pF - 60 - pF Clock pulse (φ1, φ2) Cφ 5 V bias 134 line capacitance Saturation control gate (Vscg) Cscg 5 V bias 63 line capacitance Video line capacitance CV 2 V bias 45 *7: Vφ is input pulse voltage (refer to figure 8) . *8: trf is the clock pulse rise or fall time. A clock pulse space of “rise time/fall time - 20 ” ns input if the clock pulse rise or fall time is longer than 20 ns (refer to figure 7) . *9: Vb=2.0 V, Vφ=5.0 V 2 S3904-2048Q Typ. Max. 5 10 0.4 Vφ1 10 0.4 Vφ - 3.0 Vφ - 2.5 0 Vb - (nanoseconds) or more should be NMOS linear image sensor S3901-1024Q, S3904-2048Q ■ Dimensional outline (unit: mm) Active area 51.2 × 2.5 15.5 7.75 ± 0.2 7.75 ± 0.2 25.6 ± 0.5 3.0 Chip surface 0.46 25.4 1.3 ± 0.2* 65.0 0.25 2.54 48.26 15.24 * Optical distance from the outer surface of the quartz window to the chip surface KMPDA0123EB ■ Pin connection 2 1 22 NC 1 2 21 NC st 3 20 NC Vss 4 19 NC Vscg 5 18 NC NC 6 17 NC Vscd 7 16 NC Vss 8 15 NC Active video 9 14 NC Dummy video 10 13 NC Vsub 11 12 End of scan Vss, Vsub and NC should be grounded. KMPDC0109EA Terminal Input or output φ1, φ2 Input (CMOS logic compatible) φst Input (CMOS logic compatible) Vss - Vscg Input Vscd Input Active video Output Dummy video Output Vsub End of scan NC Output (CMOS logic compatible) - Description Pulses for operating the MOS shift register. The video data rate is equal to the clock pulse frequency since the video output signal is obtained synchronously with the rise of φ2 pulse. Pulse for starting the MOS shift register operation. The time interval between start pulses is equal to the signal accumulation time. Connected to the anode of each photodiode. This should be grounded. Used for restricting blooming. This should be grounded. Used for restricting blooming. This should be biased at a voltage equal to the video bias voltage. Video output signal. Connects to photodiode cathodes when the address is on. A positive voltage should be applied to the video line in order to use photodiodes with a reverse voltage. When the amplitude of φ1 and φ2 is 5 V, a video bias voltage of 2 V is recommended. This has the same structure as the active video, but is not connected to photodiodes, so only spike noise is output. This should be biased at a voltage equal to the active video or left as an open-circuit when not needed. Connected to the silicon substrate. This should be grounded. This should be pulled up at 5 V by using a 10 kΩ resistor. This is a negative going pulse that appears synchronously with the φ2 timing right after the last photodiode is addressed. Should be grounded. 3 NMOS linear image sensor S3901-1024Q, S3904-2048Q ■ Output charge vs. exposure ■ Spectral response (typical example) (Ta=25 ˚C) 0.3 (Typ. Vb=2 V, V =5 V, light source: 2856 K) 2 10 Saturation charge 1 Output charge (pC) Photo sensitivity (A/W) 10 0.2 0.1 100 S3901-1024Q S3904-2048Q 10–1 Saturation exposure 10–2 0 200 400 600 10–3 10–5 1200 1000 800 10–4 10–3 10–2 10–1 100 Exposure (lx · s) Wavelength (nm) KMPDB0160EB KMPDB0149EA ■ Video bias voltage margin ■ Timing chart 1 2 V s (H) V s (L) V V V V 10 tpw 1 1 (H) 1 (L) 2 (H) 2 (L) 8 tpw 2 Video bias voltage (V) st tpw s tvd Active video output End of scan tr s tf s x. 6 Re m co me nd e ia db Ma s 4 Video bias range 2 st tr 1 tf 1 Min. 1 X1 X2 0 tf 2 4 5 6 7 8 10 9 2 Clock pulse amplitude (V) t ov KMPDB0043EA tr 2 KMPDC0022EA Information furnished by HAMAMATSU is believed to be reliable. However, no responsibility is assumed for possible inaccuracies or omissions. Specifications are subject to change without notice. No patent rights are granted to any of the circuits described herein. Type numbers of products listed inthe specification sheets or supplied as samples may have a suffix "(X)" which means tentative specifications or a suffix "(Z)" which means developmental specifications. ©2010 Hamamatsu Photonics K.K. HAMAMATSU PHOTONICS K.K., Solid State Division 1126-1 Ichino-cho, Higashi-ku, Hamamatsu City, 435-8558 Japan, Telephone: (81) 53-434-3311, Fax: (81) 53-434-5184, www.hamamatsu.com U.S.A.: Hamamatsu Corporation: 360 Foothill Road, P.O.Box 6910, Bridgewater, N.J. 08807-0910, U.S.A., Telephone: (1) 908-231-0960, Fax: (1) 908-231-1218 Germany: Hamamatsu Photonics Deutschland GmbH: Arzbergerstr. 10, D-82211 Herrsching am Ammersee, Germany, Telephone: (49) 8152-375-0, Fax: (49) 8152-265-8 France: Hamamatsu Photonics France S.A.R.L.: 19, Rue du Saule Trapu, Parc du Moulin de Massy, 91882 Massy Cedex, France, Telephone: 33-(1) 69 53 71 00, Fax: 33-(1) 69 53 71 10 United Kingdom: Hamamatsu Photonics UK Limited: 2 Howard Court, 10 Tewin Road, Welwyn Garden City, Hertfordshire AL7 1BW, United Kingdom, Telephone: (44) 1707-294888, Fax: (44) 1707-325777 North Europe: Hamamatsu Photonics Norden AB: Smidesvägen 12, SE-171 41 Solna, Sweden, Telephone: (46) 8-509-031-00, Fax: (46) 8-509-031-01 Italy: Hamamatsu Photonics Italia S.R.L.: Strada della Moia, 1 int. 6, 20020 Arese, (Milano), Italy, Telephone: (39) 02-935-81-733, Fax: (39) 02-935-81-741 4 Cat. No. KMPD1049E05 Jul. 2010 DN