IMAGE SENSOR CCD area image sensor S7986-01, S7987-01 Back-thinned FT-CCD for low-light-level NTSC B/W TV application S7986-01 and S7987-01 are a family of FT-CCD area image sensors specifically designed for high speed operation. A high frame rate is attained by employing a wide band width on-chip amplifier. In area scan operation, S7986-01 and S7987-01 can be used as a high frame rate camera, and 2/3-inch NTSC B/W TV correspondence. S7986-01 and S7987-01 also feature low dark signal (MPP mode operation). S7986-01 and S7987-01 have an effective pixel size of 14 × 14 µm and is available in image areas of 9.212 (H) × 6.860 (V) mm. One-stage peltier cooler is built into the package for thermoelectric cooling (S7987-01). At room temperature operation, the device can be cooled down to -10 ˚C (Typ.) without using any other cooling technique. In addition, since both the CCD chip and the peltier cooler are hermetically sealed, no dry air is required, thus allowing easy handling. Features Applications ● High-speed on-chip amplifier (14 MHz, 2/3-inch NTSC B/W TV correspondence) ● Greater than 90 % quantum efficiency ● Wide spectrum range ● Built-in TE-cooler ● MPP operation ● Non-cooled types: S7986-01 One-stage TE-cooled types: S7987-01 (Two-stage TE-cooled types are optional) ● High-speed UV imaging ● Semiconductor inspection ● Microscope ■ Selection and order guide Type No. Cooling Number of total pixels Number of active pixels Active area [mm (H) × mm (V)] S7986-01 S7987-01 Non-cooled One-stage TE-cooled 680 × 500 658 × 490 9.212 × 6.860 ■ General ratings Parameter CCD structure Fill factor Number of active pixels Pixel size Active area Vertical clock phase Horizontal clock phase Output circuit Package Window Specification Frame transfer (2/3-inch NTSC B/W TV correspondence) 100 % 658 (H) × 490 (V) 14 (H) × 14 (V) µm 9.212 (H) × 6.860 (V) mm 2 phase 2 phase Two-stage MOSFET source follower 24 pin ceramic package Sapphire glass Temporary window are available upon request 1 CCD area image sensor S7986-01, S7987-01 ■ Absolute maximum ratings (Ta=25 °C) Parameter Operating temperature Storage temperature OD voltage RD voltage ISV voltage ISH voltage IGV voltage IGH voltage SG voltage OG voltage RG voltage TG voltage Vertical clock voltage (image area) Vertical clock voltage (storage area) Horizontal clock voltage Symbol Topr Tstg VOD VRD VISV VISH VIG1V, VIG2V VIG1H, VIG2H VSG VOG VRG VTG VP1VI, VP2VI VP1VS, VP2VS VP1H, VP2H Min. -50 -50 -0.5 -0.5 -0.5 -0.5 -10 -10 -10 -10 -10 -10 -10 -10 -10 Typ. - Max. +30 +70 +25 +18 +18 +18 +15 +15 +15 +15 +15 +15 +15 +15 +15 Unit °C °C V V V V V V V V V V V V V Symbol VOD VRD VOG VSS VISV VISH VIG1V, VIG2V VIG1H, VIG2H VP1VIH, VP2VIH VP1VIL, VP2VIL VP1VSH, VP2VSH VP1VSL, VP2VSL VP1HH, VP2HH VP1HL, VP2HL VSGH VSGL VRGH VRGL VTGH VTGL Min. 12 11.5 1 -8 -8 4 -9 4 -9 4 -9 4 -9 4 -9 4 -9 Typ. 15 12 3 0 VRD VRD 0 0 6 -8 6 -8 6 -8 6 -8 6 -8 6 -8 Max. 18 12.5 5 8 -7 8 -7 8 -7 8 -7 8 -7 8 -7 Unit V V V V V V V V ■ Operating conditions (MPP mode, Ta=25 °C) Parameter Output transistor drain voltage Reset drain voltage Output gate voltage Substrate voltage Test point (vertical input source) Test point (horizontal input source) Test point (vertical input gate) Test point (horizontal input gate) Vertical shift register clock voltage (Image area) Vertical shift register clock voltage (Storage area) Horizontal shift register clock voltage Summing gate voltage Reset gate voltage Transfer gate voltage High Low High Low High Low High Low High Low High Low V V V V V V ■ Electrical characteristics (Ta=25 °C) Parameter Signal output frequency Reset clock frequency Vertical shift register capacitance (Image area) Vertical shift register capacitance (Storage area) Horizontal shift register capacitance Summing gate capacitance Reset gate capacitance Transfer gate capacitance Transfer efficiency DC output level Output impedance Symbol fc frg CP1VI CP2VI CP1VS CP2VS CP1H, CP2H CSG CRG CTG CTE Remark - Min. - Typ. 1 1 Max. 14 14 Unit MHz MHz - - 3,000 (TBD) - pF - - 3,000 (TBD) - pF *1 0.99995 100 (TBD) 7 7 50 (TBD) 0.99999 - pF pF pF pF - Vout *2 - 8 (TBD) - V Zo *2 - 500 (TBD) - 60 (TBD) - Ω mW *2, *3 Power dissipation P *1: Charge transfer efficiency per pixel, measured at half of the full well capacity. *2: VOD=15 V, Load resistance=2.2 kΩ *3: Power dissipation of the on-chip amplifier. 2 CCD area image sensor S7986-01, S7987-01 ■ Electrical and optical characteristics (Ta=25 °C, unless otherwise noted) Parameter Saturation output voltage Vertical Full well capacity Horizontal Symbol Vsat Remark - Fw - Sv CCD node sensitivity 25 °C 0 °C Dark current (MPP mode) Readout noise Min. 30 60 Typ. Fw × Sv 65 130 Max. - Unit V *4 1.5 2.0 - µV/e- DS *5 - 2,000 100 6,000 300 e-/pixel/s Nr *6 - 150 300 *7 100 - 430 200 to 1,100 - +/-10 e-rms nm % Dynamic range (area scanning) DR Spectral response range λ Photo response non-uniformity PRNU *4: VOD=15 V, Load resistance=2.2 kΩ *5: Dark current doubles for every 5 to 7 °C. *6: -40 °C, operating frequency is 12 MHz. *7: DR = Fw / Nr *8: Measured at half of the full well capacity. PRNU (%) = noise / signal × 100 Noise: fixed pattern noise (peak to peak) *8 ke- ■ Pin connections Pin No. 1 2 3 4 5 6 7 8 9 10 11 12 13 Symbol RD OS OD OG SG NC NC P2H P1H IG2H IG1H ISH TG 14 P2VS 15 P1VS 16 17 18 19 20 NC NC NC NC SS 21 P2VI 22 P1VI S7986-01 Description Reset drain Output transistor source Output transistor drain Output gate Summing gate CCD horizontal register clock-2 CCD horizontal register clock-1 Test point (horizontal input gate-2) Test point (horizontal input gate-1) Test point (horizontal input source) Transfer gate CCD vertical register clock-2 (storage area) CCD vertical register clock-1 (storage area) Substrate (GND) CCD vertical register clock-2 (image area) CCD vertical register clock-1 (image area) Symbol RD OS OD OG SG NC NC P2H P1H IG2H IG1H ISH TG P2VS P1VS Th1 Th2 PP+ SS P2VI P1VI S7987-01 Description Reset drain Output transistor source Output transistor drain Output gate Summing gate CCD horizontal register clock-2 CCD horizontal register clock-1 Test point (horizontal input gate-2) Test point (horizontal input gate-1) Test point (horizontal input source) Transfer gate CCD vertical register clock-2 (storage area) CCD vertical register clock-1 (storage area) Thermistor Thermistor TE-coolerTE-cooler+ Substrate (GND) CCD vertical register clock-2 (image area) CCD vertical register clock-1 (image area) Remark Same timing as P2H Shorted to 0 V Shorted to 0 V Shorted to RD *9 Same timing as P2VS 23 NC NC 24 RG Reset gate RG Reset gate *9: TG is an isolation gate between vertical register and horizontal resister. In standard operation, the same pulse of P2VS should be applied to the TG. 3 CCD area image sensor ■ Spectral response without window ■ Spectral transmittance characteristic of window material (Typ. Ta=25 ˚C) 100 QUANTUM EFFICIENCY (%) 90 (Typ. Ta=25 ˚C) 100 BACK-THINNED 90 80 80 QUARTZ WINDOW TRANSMITTANCE (%) 70 60 50 40 30 20 S7986-01, S7987-01 FRONT-SIDED (UV COAT) 70 SAPPHIRE WINDOW 60 50 40 30 20 FRONT-SIDED 10 10 0 200 400 600 800 1000 0 100 200 300 400 500 600 700 800 900 1000 1200 WAVELENGTH (nm) WAVELENGTH (nm) KMPDB0058EA KMPDB0101EA ■ Dimensional outlines (unit: mm) S7986-01 S7987-01 WINDOW 12.0 WINDOW 12.0 ACTIVE AREA 6.860 ACTIVE AREA 6.860 22.4 22.9 6.9 19.0 6.3 4.0 12.0 9.212 22.4 22.9 24 23 9.212 12.0 24 23 1 2 INDEX MARK 1 2 INDEX MARK 2.54 2.54 44.0 44.0 52.0 60.0 4.8 1st PIN INDEX MARK PHOTOSENSITIVE SURFACE (24 ×) 0.5 KMPDA0103EA 4 7.7 1.0 3.0 4.8 2.4 3.0 (24 ×) 0.5 4.0 PHOTOSENSITIVE SURFACE 3.4 1st PIN INDEX MARK KMPDA0104EA CCD area image sensor S7986-01, S7987-01 ■ Device structure (Conceptual drawing of top view) 490 IMAGE 20 THINNING 490 5 4 3 2 1 2345 22 ... 658 21 10 BEVEL THINNING 15 ... 14 ... 13 1 12 11 3 2 4 5 8 4 BLANK 9 10 500 STORAGE 24 658 SIGNAL OUT 22 BEVEL KMPDC0098EA ■ Timing chart for TV rate operation” g “2 line binning g SHUTTER OPEN SHUTTER CLOSE (VERTICAL TRANSFER) P2VI P2VS P1H P2H, SG RG Vos HORIZONTAL TRANSFER EXPANDED VIEW P2VS P1H P2H RG Vos D1 D2 D3 DARK SIGNAL PHOTO GENERATED SIGNAL KMPDC0099EA Parameter Pulse width P1VI, P2VI, P1VS, P2VS, TG Rise and fall time Pulse width P1H, P2H Rise and fall time Duty ratio Pulse width SG Rise and fall time Duty ratio Pulse width RG Rise and fall time TG - P1H Overlap time Symbol Tpwv Tprv, Tpfv Tpwh Tprh, Tpfh Tpws Tprs, Tpfs Tpwr Tprr, Tpfr Tovr Remark *10 *10 - - Min. 1 20 35 10 35 10 15 5 3 Typ. 50 50 - Max. - Unit µs ns ns ns % ns ns % ns ns µs *10: Symmetrical pulses should be overlapped at 50 % of maximum amplitude. 5 CCD area image sensor S7986-01, S7987-01 ■ Specifications of built-in TE-cooler (S7987-01) Parameter Internal resistance Maximum current *11 Symbol Rint Condition Ta=27 °C Th *12=27 °C Min. - Typ. 1.2 Max. - Unit Ω Imax ∆T *13=∆Tmax - - 3.0 A - - 3.6 V - - 5.0 W - - 70 °C Th Maximum voltage Vmax Maximum heat absorption *14 Qmax Maximum temperature at hot side *12=27 °C ∆T = ∆Tmax I = Imax Tc *15=Th *12=27 °C I = Imax - - CCD temperature Ta=25 °C -10 0 °C *11: If the current is greater than Imax, the heat absorption begins to decrease due to the Joule heat. It should be noted that this value is not a damage threshold. To protect the thermoelectric cooler and maintain stable operation, the supply current should be less than 60 % of this maximum current. *12: Temperature at hot side of thermoelectric cooler. *13: ∆T = Th - Tc *14: This is a theoretical heat absorption level that offsets the temperature difference in the TE-cooler element when the maximum current is supplied to the unit. *15: Temperature at cool side of thermoelectric cooler. (Typ. Ta=25 ˚C) VOLTAGE vs. CURRENT CCD TEMPERATURE vs. CURRENT VOLTAGE (V) 6 30 20 5 10 4 0 3 -10 2 -20 1 -30 0 0 1 2 3 4 CCD TEMPERATURE (˚C) 7 -40 CURRENT (A) KMPDB0179EA ■ Specifications of built-in temperature sensor (S7987-01) (Typ. Ta=25 ˚C) 1 MΩ R1 = R2 × expB (1 / T1 – 1 / T2) where R1 is the resistance at absolute temperature T1 (K) R2 is the resistance at absolute temperature T2 (K) B is so-called the B constant (K) The characteristics of the thermistor used are as follows. R (298 K)=10 kΩ B (298 K / 323 K)=3450 K. RESISTANCE A chip thermistor is built in the same package with a CCD chip, and the CCD chip temperature can be monitored with it. A relation between the thermistor resistance and absolute temperature is expressed by the following equation. 100 kΩ 10 kΩ 220 240 260 280 300 TEMPERATURE (K) KMPDB0111EA 6 CCD area image sensor S7986-01, S7987-01 ■ Precaution for use (electrostatic countermeasures) ● Handle these sensors with bare hands or wearing cotton gloves. In addition, wear anti-static clothing or use a wrist band with an earth ring, in order to prevent electrostatic damage due to electrical charges from friction. ● Avoid directly placing these sensors on a work-desk or work-bench that may carry an electrostatic charge. ● Provide ground lines or ground connection with the work-floor, work-desk and work-bench to allow static electricity to discharge. ● Ground the tools used to handle these sensors, such as tweezers and soldering irons. It is not always necessary to provide all the electrostatic measures stated above. Implement these measures according to the amount of damage that occurs. ■ Heating/cooleing rate The heating/cooling rate should be set at less than 5 K/min. Information furnished by HAMAMATSU is believed to be reliable. However, no responsibility is assumed for possible inaccuracies or omissions. Specifications are subject to change without notice. No patent rights are granted to any of the circuits described herein. ©2006 Hamamatsu Photonics K.K. HAMAMATSU PHOTONICS K.K., Solid State Division 1126-1 Ichino-cho, Higashi-ku, Hamamatsu City, 435-8558 Japan, Telephone: (81) 53-434-3311, Fax: (81) 53-434-5184, www.hamamatsu.com U.S.A.: Hamamatsu Corporation: 360 Foothill Road, P.O.Box 6910, Bridgewater, N.J. 08807-0910, U.S.A., Telephone: (1) 908-231-0960, Fax: (1) 908-231-1218 Germany: Hamamatsu Photonics Deutschland GmbH: Arzbergerstr. 10, D-82211 Herrsching am Ammersee, Germany, Telephone: (49) 08152-3750, Fax: (49) 08152-2658 France: Hamamatsu Photonics France S.A.R.L.: 19, Rue du Saule Trapu, Parc du Moulin de Massy, 91882 Massy Cedex, France, Telephone: 33-(1) 69 53 71 00, Fax: 33-(1) 69 53 71 10 United Kingdom: Hamamatsu Photonics UK Limited: 2 Howard Court, 10 Tewin Road, Welwyn Garden City, Hertfordshire AL7 1BW, United Kingdom, Telephone: (44) 1707-294888, Fax: (44) 1707-325777 North Europe: Hamamatsu Photonics Norden AB: Smidesvägen 12, SE-171 41 Solna, Sweden, Telephone: (46) 8-509-031-00, Fax: (46) 8-509-031-01 Italy: Hamamatsu Photonics Italia S.R.L.: Strada della Moia, 1/E, 20020 Arese, (Milano), Italy, Telephone: (39) 02-935-81-733, Fax: (39) 02-935-81-741 Cat. No. KMPD1035E06 Feb. 2006 DN 7