IMAGE SENSOR CCD area image sensor S9978 Front-illuminated FFT-CCDs, high IR sensitivity S9978 is FFT-CCD area image sensor specifically designed for low-light-level detection in scientific applications. S9978 also features low noise and low dark current (MPP mode operation). These enable low-light-level detection and long integration time, thus achieving a wide dynamic range. S9978 is pin compatible with S9736-01. (Operating conditions and characteristics are a little bit changed from S9736-01.) Features Applications l High IR sensitivity l 512 (H) × 512 (V) pixel format l Pixel size: 24 × 24 µm l 100 % fill factor l Wide dynamic range l Low dark current l Low readout noise l MPP operation l Astronomy l Scientific measuring instrument l Fluorescence spectrometer l Raman spectrophotometer l Optical and spectrophotometric analyzer l For low-light-level detection requiring ■ General ratings Parameter CCD structure Fill factor Number of active pixels Pixel size Active area Vertical clock phase Horizontal clock phase Output circuit Package Window Rating Full frame transfer 100 % 512 (H) × 512 (V) 24 (H) × 24 (V) µm 12.288 (H) × 12.288 (V) mm 2 phase 2 phase One-stage MOSFET source follower 24-pin ceramic DIP None ■ Spectral response (without window) (Typ. Ta=25 ˚C) QUANTUM EFFICIENCY (%) 60 50 S9978 40 30 20 10 0 400 CONVENTIONAL TYPE S9736-01 500 600 700 800 900 1000 1100 1200 WAVELENGTH (nm) KMPDB0253EB 1 CCD area image sensor S9978 ■ Absolute maximum ratings (Ta=25 °C) Parameter Operating temperature Storage temperature OD voltage RD voltage ISV voltage ISH voltage IGV voltage IGH voltage SG voltage OG voltage RG voltage TG voltage Vertical clock voltage Horizontal clock voltage Symbol Topr Tstg VOD VRD VISV VISH VIG1V, VIG2V VIG1H, VIG2H VSG VOG VRG VTG VP1V, VP2V VP1H, VP2H Min. -50 -50 -0.5 -0.5 -0.5 -0.5 -15 -15 -15 -15 -15 -15 -15 -15 Typ. - Max. +30 +70 +25 +18 +18 +18 +15 +15 +15 +15 +15 +15 +15 +15 Unit °C °C V V V V V V V V V V V V Symbol VOD VRD VOG VSS VISV VISH VIG1V, VIG2V VIG1H, VIG2H VP1VH, VP2VH VP1VL, VP2VL VP1HH, VP2HH VP1HL, VP2HL VSGH VSGL VRGH VRGL VTGH VTGL Min. 18 12 -0.5 -8 -8 0 -9 0 -9 0 -9 0 -9 0 -9 Typ. 20 13 0 0 VRD VRD 0 0 4 -8 4 -8 4 -8 4 -8 4 -8 Max. 22 14 2 6 -7 6 -7 6 -7 6 -7 6 -7 Unit V V V V V V V V ■ Operating conditions (MPP mode, Ta=25 °C) Parameter Output transistor drain voltage Reset drain voltage Output gate voltage Substrate voltage Test point (vertical input source) Test point (horizontal input source) Test point (vertical input gate) Test point (horizontal input gate) Vertical shift register clock voltage Horizontal shift register clock voltage Summing gate voltage Reset gate voltage Transfer gate voltage High Low High Low High Low High Low High Low V V V V V ■ Electrical characteristics (Ta=25 °C) Parameter Symbol Remark Min. Signal output frequency fc Vertical shift register capacitance CP1V, CP2V Horizontal shift register capacitance CP1H, CP2H Summing gate capacitance CSG Reset gate capacitance CRG Transfer gate capacitance CTG Transfer efficiency CTE *1 0.99995 DC output level Vout *2 12 Output impedance Zo *2 Power dissipation P *2, *3 *1: Charge transfer efficiency per pixel, measured at half of the full well capacity. *2: The values depend on the load resistance. (VOD=20 V, Load resistance=10 kΩ) *3: Power dissipation of the on-chip amplifier. 2 Typ. 0.1 3500 60 5 5 70 0.99999 15 3 15 Max. 1 18 - Unit MHz pF pF pF pF pF V kΩ mW CCD area image sensor S9978 ■ Electrical and optical characteristics (Ta=25 °C, unless otherwise noted) Parameter Symbol Remark Min. Typ. Max. Unit Saturation output voltage Vsat Fw × Sv V Vertical 120 240 Full well Fw kecapacity Horizontal 280 CCD node sensitivity Sv *4 2.8 µV/e+25 °C 1000 15000 Dark current DS *5 e-/pixel/s (MPP mode) 0 °C 100 1500 Readout noise Nr *6 4 18 e-rms Dynamic range Area scanning *7 6667 60000 Spectral response range 400 to 1100 nm λ Photo response non-uniformity PRNU *8 ±10 % Point defects *9 0 Blemish Cluster defects *10 0 Column defects *11 0 *4: VOD=20 V , Load resistance=10 kΩ *5: Dark current nearly doubles for every 5 to 7 °C increase in temperature. *6: -40 °C, operating frequency is 80 kHz. *7: DR = Fw / Nr *8: Measured at half of the full well capacity. PRNU = noise / signal × 100 [%], noise: fixed pattern noise (peak to peak) *9: White spots > 3 % of full well at 0 °C after Ts=1 s Black spots Pixels whose sensitivity is lower than one-half of the average pixel output. (Measured with uniform light producing one-half of the saturation charge) *10: 2 to 9 contiguous defective pixels *11: 10 or more contiguous defective pixels ■ Pin connections Pin No. 1 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 17 18 19 20 21 22 23 24 Symbol RG RD OS OD OG SG P2H NC P1H NC IG2H IG1H ISH TG P2V NC P1V NC NC SS NC ISV IG2V IG1V Description Reset gate Reset drain Output source Output transistor drain Output gate Summing gate CCD horizontal register clock-2 No connection CCD horizontal register clock-1 No connection Test point (horizontal input gate-2) Test point (horizontal input gate-1) Test point (horizontal input source) Transfer gate CCD vertical register clock-2 No connection CCD vertical register clock-1 No connection No connection Substrate (GND) No connection Test point (vertical input source) Test point (vertical input gate-2) Test point (vertical input gate-1) Remark Shorted to ground Shorted to ground Shorted to RD Shorted to RD Shorted to ground Shorted to ground 3 CCD area image sensor S9978 ■ Dimensional outline (unit: mm) 27.0 12.288 1.3 ± 0.3 24 13 22.86 ± 0.3 23.11 ± 0.3 12.288 22.73 ± 0.3 2.4 R1.2 PHOTOSENSITIVE SURFACE 12 30.48 ± 0.3 1.27 3.0 PIN No. 1 2.54 KMPDA0140EB ■ Device structure, line output format IG1V IG2V ISV 24 23 22 SS 20 P1V 17 TG 14 P2V 15 V ...... V=512 H=512 1 RD 2 OS 3 ...... H ...... D13 D14 D15 D16 D17 D18 D19 D20 RG D1 D2 D3 D4 D5 D6 D7 D8 D9 D10 D11 D12 1 13 ISH 12 IG1H 4 OD 5 OG 6 SG 4 ISOLATION 4 BLANK 4 OPTICAL BLACK 512 SIGNAL OUT 7 9 P2H P1H 11 IG2H 4 ISOLATION 4 BLANK KMPDC0207EA Pixel format Blank 4 Optical Black 4 Left ← Horizontal Direction → Right Isolation Effective Isolation 4 512 4 Top ← Vertical Direction → Bottom Isolation Effective Isolation 4 512 4 4 Optical Black - Blank 4 CCD area image sensor S9978 ■ Timing chart ● Area scanning 1 (low dark current mode) INTEGRATION PERIOD (Shutter must be open) READOUT PERIOD (Shutter must be closed) Tpwv 1 2 3 P1V 520←512+8 (ISOLATION) 4..519 P2V, TG P1H P2H, SG RG OS Tovr P2V, TG ENLARGED VIEW Tpwh, Tpws P1H P2H, SG Tpwr RG OS D1 D2 D3 D4 D18 D5..D12, S1..S512, D13..D17 Parameter Symbol Remark Pulse width Tpwv *12 Rise and fall time Tprv, Tpfv Pulse width Tpwh P1H, P2H Rise and fall time Tprh, Tpfh *12 Duty ratio Pulse width Tpws SG Rise and fall time Tprs, Tpfs Duty ratio Pulse width Tpwr RG Rise and fall time Tprr, Tpfr TG – P1H Overlap time Tovr *12: The clock pulses should be overlapped at 50 % of clock pulse amplitude. P1V P2V, TG Min. 6 200 500 10 500 10 100 5 3 D19 D20 KMPDC0208EA Typ. 18 5000 50 5000 50 500 6 Max. - Unit µs ns ns ns % ns ns % ns ns µs 5 CCD area image sensor S9978 ● Area scanning 2 (large full well mode) INTEGRATION PERIOD (Shutter must be open) READOUT PERIOD (Shutter must be closed) Tpwv 1 2 3 4..519 520←512 + 8 (ISOLATION) P1V P2V, TG P1H P2H, SG RG OS Tovr P2V, TG ENLARGED VIEW Tpwh, Tpws P1H P2H, SG Tpwr RG OS D1 D2 D3 D4 D18 D5..D12, S1..S512, D13..D17 Parameter Symbol Remark Pulse width Tpwv *13 Rise and fall time Tprv, Tpfv Pulse width Tpwh P1H, P2H Rise and fall time Tprh, Tpfh *13 Duty ratio Pulse width Tpws SG Rise and fall time Tprs, Tpfs Duty ratio Pulse width Tpwr RG Rise and fall time Tprr, Tpfr TG – P1H Overlap time Tovr *13: The clock pulses should be overlapped at 50 % of clock pulse amplitude. P1V P2V, TG D19 D20 KMPDC0209EA Min. 6 200 500 10 500 10 100 5 3 Typ. 18 5000 50 5000 50 500 6 Max. - Unit µs ns ns ns % ns ns % ns ns µs ■ Precaution for use (electrostatic countermeasures) ● Handle these sensors with bare hands or wearing cotton gloves. In addition, wear anti-static clothing or use a wrist strap, in order to prevent electrostatic damage due to electrical charges from friction. ● Avoid directly placing these sensors on a work-desk or work-bench that may carry an electrostatic charge. ● Provide ground lines or ground connection with the work-floor, work-desk and work-bench to allow static electricity to discharge. ● Ground the tools used to handle these sensors, such as tweezers and soldering irons. It is not always necessary to provide all the electrostatic measures stated above. Implement these measures according to the amount of damage that occurs. ■ Element cooling/heating temperature incline rate When cooling the CCD by an externally attached cooler, set the cooler operation so that the temperature gradient (rate of temperature change) for cooling or allowing the CCD to warm back is less than 5 K/minute. Information furnished by HAMAMATSU is believed to be reliable. However, no responsibility is assumed for possible inaccuracies or omissions. Specifications are subject to change without notice. No patent rights are granted to any of the circuits described herein. ©2007 Hamamatsu Photonics K.K. HAMAMATSU PHOTONICS K.K., Solid State Division 1126-1 Ichino-cho, Higashi-ku, Hamamatsu City, 435-8558 Japan, Telephone: (81) 53-434-3311, Fax: (81) 53-434-5184, www.hamamatsu.com U.S.A.: Hamamatsu Corporation: 360 Foothill Road, P.O.Box 6910, Bridgewater, N.J. 08807-0910, U.S.A., Telephone: (1) 908-231-0960, Fax: (1) 908-231-1218 Germany: Hamamatsu Photonics Deutschland GmbH: Arzbergerstr. 10, D-82211 Herrsching am Ammersee, Germany, Telephone: (49) 08152-3750, Fax: (49) 08152-2658 France: Hamamatsu Photonics France S.A.R.L.: 19, Rue du Saule Trapu, Parc du Moulin de Massy, 91882 Massy Cedex, France, Telephone: 33-(1) 69 53 71 00, Fax: 33-(1) 69 53 71 10 United Kingdom: Hamamatsu Photonics UK Limited: 2 Howard Court, 10 Tewin Road, Welwyn Garden City, Hertfordshire AL7 1BW, United Kingdom, Telephone: (44) 1707-294888, Fax: (44) 1707-325777 North Europe: Hamamatsu Photonics Norden AB: Smidesvägen 12, SE-171 41 Solna, Sweden, Telephone: (46) 8-509-031-00, Fax: (46) 8-509-031-01 Italy: Hamamatsu Photonics Italia S.R.L.: Strada della Moia, 1/E, 20020 Arese, (Milano), Italy, Telephone: (39) 02-935-81-733, Fax: (39) 02-935-81-741 6 Cat. No. KMPD1093E01 Feb. 2007 DN