HAMAMATSU G11193

InGaAs PIN photodiodes
G11193 series
Small package, surface mount type
Features
Applications
Small SMD (surface mount device) package
Optical power meter
Low noise, low dark current
Measurement/analytical instruments
Low price
General ratings
Parameter
G11193-02R
Package
Active area
Window
G11193-03R
Unit
mm
-
SMD
φ0.2
φ0.3
Resin
Absolute maximum ratings
Parameter
Reverse voltage
Operating temperature
Storage temperature
Symbol
VR Max.
Topr
Tstg
G11193-02R
G11193-03R
Unit
V
°C
°C
10
-25 to +85*
-40 to +100*
* No condensation
Electrical and optical characteristics (Ta=25 °C)
Parameter
Spectral response
range
Peak sensitivity
wavelength
Photo sensitivity
Dark current
Cut-off frequency
Terminal capacitance
Shunt resistance
Detectivity
Symbol
λ
Condition
Higher than 10%
of peak
λp
S
ID
fc
Ct
Rsh
D*
λ=1.3 μm
λ=1.55 μm
VR=5 V
VR=5 V, RL=50 Ω
VR=5 V, f=1 MHz
VR=10 mV
λ=λp
Min.
G11193-02R
Typ.
Max.
Min.
G11193-03R
Typ.
Max.
Unit
-
0.9 to 1.7
-
-
0.9 to 1.7
-
μm
-
1.55
-
-
1.55
-
μm
0.75
0.77
-
0.85
1.0
40
1
3
1000
5 × 1012
800
-
0.75
0.77
-
0.85
1.0
100
0.5
5
700
5 × 1012
1200
-
www.hamamatsu.com
A/W
pA
GHz
pF
MΩ
cmăHz1/2/W
1
InGaAs PIN photodiodes
G11193 series
Spectral response
Photo sensitivity temperature characteristic
(Typ. Ta=25 °C)
1.2
Temperature coefficient (%/°C)
1.0
Photo sensitivity (A/W)
(Typ. Ta=25 °C)
2
0.8
0.6
0.4
0.2
0
0.7 0.8 0.9 1.0 1.1 1.2 1.3 1.4 1.5 1.6 1.7 1.8 1.9
1.5
1
0.5
0
-0.5
-1
0.2
0.4
0.6
0.8
Wavelength (µm)
1.0
1.2
1.4
1.8
Wavelength (µm)
KIRDB0409EA
KIRDB0445EA
Dark current vs. reverse voltage
Terminal capacitance vs. reverse voltage
(Typ. Ta=25 °C)
10 nA
1.6
(Typ. Ta=25 °C, f=1 MHz)
1 nA
Terminal capacitance
Dark current
1 nA
G11193-03R
100 pA
10 pA
G11193-02R
100 pF
G11193-03R
10 pF
G11193-02R
1 pF
1 pA
100 fA
0.01
0.1
1
10
100
Reverse voltage (V)
100 fF
0.01
0.1
1
10
100
Reverse voltage (V)
KIRDB0446EA
KIRDB0447EA
2
InGaAs PIN photodiodes
G11193 series
Dark current vs. ambient temperature
(Typ. VR=5 V)
100 nA
Dark current
10 nA
1 nA
G11193-03R
100 pA
G11193-02R
10 pA
1 pA
-40 -30 -20 -10 0 10 20 30 40 50 60 70 80 90 100
Ambient temperature (°C)
KIRDB0448EA
3
InGaAs PIN photodiodes
G11193 series
Dimensional outline (unit: mm)
Active area
5.0 ± 0.2
1.2 ± 0.2
1.8
0.6 ± 0.2
1.8
1.0 ± 0.1
4.0 ± 0.2
Photosensitive surface
(2 ×)R 0.4 ± 0.1
1.5
1.0
0.6
(2 ×) (R 0.2)
Cathode
Anode
0.7
3.0
0.7
Type No.
Active area
G11193-02R
0.2
G11193-03R
0.3
KIRDA0210EA
Information furnished by HAMAMATSU is believed to be reliable. However, no responsibility is assumed for possible inaccuracies or omissions.
Specifications are subject to change without notice. No patent rights are granted to any of the circuits described herein.
Type numbers of products listed in the specification sheets or supplied as samples may have a suffix “(X)” which means tentative specifications or a suffix “(Z)”
which means developmental specifications. ©2010 Hamamatsu Photonics K.K.
www.hamamatsu.com
HAMAMATSU PHOTONICS K.K., Solid State Division
1126-1 Ichino-cho, Higashi-ku, Hamamatsu City, 435-8558 Japan, Telephone: (81) 53-434-3311, Fax: (81) 53-434-5184
U.S.A.: Hamamatsu Corporation: 360 Foothill Road, P.O.Box 6910, Bridgewater, N.J. 08807-0910, U.S.A., Telephone: (1) 908-231-0960, Fax: (1) 908-231-1218
Germany: Hamamatsu Photonics Deutschland GmbH: Arzbergerstr. 10, D-82211 Herrsching am Ammersee, Germany, Telephone: (49) 8152-375-0, Fax: (49) 8152-265-8
France: Hamamatsu Photonics France S.A.R.L.: 19, Rue du Saule Trapu, Parc du Moulin de Massy, 91882 Massy Cedex, France, Telephone: 33-(1) 69 53 71 00, Fax: 33-(1) 69 53 71 10
United Kingdom: Hamamatsu Photonics UK Limited: 2 Howard Court, 10 Tewin Road, Welwyn Garden City, Hertfordshire AL7 1BW, United Kingdom, Telephone: (44) 1707-294888, Fax: (44) 1707-325777
North Europe: Hamamatsu Photonics Norden AB: Smidesvägen 12, SE-171 41 Solna, Sweden, Telephone: (46) 8-509-031-00, Fax: (46) 8-509-031-01
Italy: Hamamatsu Photonics Italia S.R.L.: Strada della Moia, 1 int. 6, 20020 Arese, (Milano), Italy, Telephone: (39) 02-935-81-733, Fax: (39) 02-935-81-741
Cat. No. KIRD1111E01 Sep. 2010 DN
4