HAMAMATSU S9038

IMAGE SENSOR
CCD image sensor
S9037/S9038 series
High-speed operation, back-thinned FFT-CCD
S9037/S9038 series FFT-CCD image sensors were developed for high-speed line scan cameras. Since an on-chip amplifier having a wide
bandwidth is used to an image sensor, a pixel rate of 10 MHz can be obtained. S9037/S9038 series image sensors also deliver a high line scan
rate equivalent to interline CCD sensors when used in line binning operation mode, because they have an active area pixel format where the
number of vertical pixels is less than the number of horizontal pixels. This makes S9037/S9038 series ideal for line scan cameras.
S9037/S9038 series image sensors have a pixel size of 24 × 24 µm and are available in pixel formats of 512 × 4 pixels and 1024 × 4 pixels.
S9038 series has a one-stage thermoelectric cooler assembled in the same package allowing stable operation at cooled temperatures. Both
S9037/S9038 series image sensors use a quartz glass window equivalent to SUPRASIL glass that provides high transmittance even at 193 nm
wavelength. These image sensors also have stable quantum efficiency in the UV region making them ideal for excimer laser monitors.
Features
lHigh-speed operation: 10 MHz
lPixel size: 24 × 24 µm
lLine/pixel binning operation
lS9038 series: one-stage thermoelectric cooling
lHigh quantum efficiency: 90 % or more at peak
lMPP operation
Applications
lExcimer laser monitors
lHigh-speed line scan cameras
■ Selection guide
Type No.
S9037-0902
S9037-1002
S9038-0902S
S9038-1002S
Cooling
Non-cooled
One-stage TE-cooled
Number of total pixels
Number of active pixels
520 × 6
1044 × 8
520 × 6
1044 × 8
512 × 4
1024 × 4
512 × 4
1024 × 4
Active area
[mm (H) × mm (V)]
12.288 × 0.096
24.576 × 0.096
12.288 × 0.096
24.576 × 0.096
■ Specifications
Parameter
S9037-0902
S9037-1002
S9038-0902S
S9038-1002S
Line rate
16 kHz
8 kHz
16 kHz
8 kHz
Data rate
10 MHz
Vertical clock
2 phases
Horizontal clock
2 phases
Output circuit
Two-stage MOSFET source follower
Package
24 pin metal package
Window material *1
Quartz window equivalent to SUPRASIL
AR-coated sapphire
*1: Window-less type is available as option.
1
CCD image sensor
S9037/S9038 series
■ Absolute maximum ratings (Ta=25 °C)
Parameter
Operating temperature
Storage temperature
OD voltage
RD voltage
ISH voltage
IGH voltage
SG voltage
OG voltage
RG voltage
TG voltage
Vertical clock voltage
Horizontal clock voltage
Symbol
Topr
Tstg
VOD
VRD
VISH
VIG1H, VIG2H
VSG
VOG
VRG
VTG
VP1V, VP2V
VP1H, VP2H
Min.
-50
-50
-0.5
-0.5
-0.5
-10
-10
-10
-10
-10
-10
-10
Typ.
-
Max.
+70
+70
+25
+18
+18
+15
+15
+15
+15
+15
+15
+15
Unit
°C
°C
V
V
V
V
V
V
V
V
V
V
Symbol
VOD
VRD
VOG
VSS
VISH
VIG1H, VIG2H
VP1VH, VP2VH
VP1VL, VP2VL
VP1HH, VP2HH
VP1HL, VP2HL
VSGH
VSGL
VRGH
VRGL
VTGH
VTGL
Min.
12
11.5
1
-8
4
-9
4
-9
4
-9
4
-9
4
-9
Typ.
15
12
3
0
VRD
0
6
-8
6
-8
6
-8
6
-8
6
-8
Max.
12.5
5
8
-7
8
-7
8
-7
8
-7
8
-7
Unit
V
V
V
V
V
V
■ Operating conditions (MPP mode, Ta=25 °C)
Parameter
Output transistor drain voltage
Reset drain voltage
Output gate voltage
Substrate voltage
Test point (horizontal input source)
Test point (horizontal input gate)
Vertical shift register
clock voltage
Horizontal shift register
clock voltage
Summing gate voltage
Reset gate voltage
Transfer gate voltage
High
Low
High
Low
High
Low
High
Low
High
Low
V
V
V
V
V
■ Electrical characteristics (Ta=25 °C)
Parameter
Signal output frequency
Reset clock frequency
Remark
-0902
Vertical shift register capacitance
CP1V, CP2V
-1002
-0902
Horizontal shift register capacitance
CP1H, CP2H
-1002
Summing gate capacitance
CSG
Reset gate capacitance
CRG
Transfer gate capacitance
CTG
Transfer efficiency
CTE
*2
DC output level
Vout
Output impedance
Zo
*3
Power dissipation
P
*3, *4
*2: Charge transfer efficiency per pixel, measured at half of the full well capacity.
*3: This depends on the output transistor drain voltage.
*4: Power dissipation of the on-chip amplifier.
2
Symbol
fc
frg
Min.
-
Typ.
300
500
200
300
7
7
15
0.99995
7
500
100
Max.
10
10
-
Unit
MHz
MHz
pF
pF
pF
pF
pF
pF
pF
V
Ω
mW
CCD image sensor
S9037/S9038 series
■ Electrical and optical characteristics (Ta=25 °C, unless otherwise noted)
Min.
Parameter
Symbol
Saturation output voltage
Vsat
Vertical
Full well capacity
Fw
Horizontal (summing)
CCD node sensitivity
Sv
25 °C
Dark current *5
DS
(MPP mode)
0 °C
Readout noise *6
Nr
Dynamic range (line binning)
DR
Photo response non-uniformity *7
PRNU
Spectral response range (without window)
λ
*5: Dark current nearly doubles for every 5 to 7 °C increase in temperature.
*6: -40 °C, operating frequency is 80 kHz.
*7: Condition: half of saturation output voltage.
■ Spectral response (without window) *8
BACK-THINNED
keµV/ee-/pixel/s
e-rms
%
nm
(Typ. Ta=25 ˚C)
90
80
80
70
60
50
40
30 FRONT-ILLUMINATED
(UV COAT)
20
400
QUARTZ WINDOW
70
AR COATED SAPPHIRE
60
50
40
30
20
FRONT-ILLUMINATED
10
10
0
200
Unit
V
±10
-
100
TRANSMITTANCE (%)
QUANTUM EFFICIENCY (%)
90
Max.
■ Spectral transmittance characteristics
(Typ. Ta=25 ˚C)
100
Typ.
Fw × Sv
300
600
1.2
4,000
200
100
6000
200 to 1100
600
800
1000
0
100 200 300 400 500 600 700 800 900 1000 1100 1200
1200
WAVELENGTH (nm)
WAVELENGTH (nm)
KMPDB0058EA
KMPDB0110EA
*8: Spectral response with quartz glass or AR-coated
sapphire are decreased by the transmittance.
■ Spectral response of photosensitive surface
(without cap)
■ Dark current vs. temperature
(Typ.)
10000
(Typ. Ta=25 ˚C)
DARK CURRENT (e-/pixel/s)
QUANTUM EFFICIENCY (%)
120
100
80
60
40
1000
100
10
1
20
0.1
-50
0
100
120
140
160
180
-40
-30
-20
-10
0
10
TEMPERATURE (˚C)
WAVELENGTH (nm)
20
30
200
KMPDB0037EB
KMPDB0150EA
3
CCD image sensor
S9037/S9038 series
■ Device structure
S9037-0902, S9038-0902S
THINNING
4 ACTIVE
SS
P1V
TG
6
RG
ISH
RD
OD
1
OS
OG
SG
4 BLANK
P2H
P1H
IG2H
2 BEVEL
THINNING
P2V
IG1H
512 ACTIVE
4 BLANK
KMPDC0159EC
S9037-1002, S9038-1002S
THINNING
4 ACTIVE
P2V
8
TG
RG
ISH
RD
OD
1
OS
OG
4 BLANK
6 BEVEL
SG
P2H
P1H
1024 ACTIVE
IG2H
3 BEVEL
THINNING
P1V
1 BEVEL
SS
IG1H
4 BLANK
6 BEVEL
KMPDC0160EB
4
CCD image sensor
S9037/S9038 series
■ Timing chart (line binning)
INTEGRATION PERIOD
VERTICAL BINNING PERIOD
READOUT PERIOD
INTEGRATION PERIOD
Tpwv
P1V
P2V, TG
Tpwh, Tpws
P1H
P2H
SG
Tpwr
RG
Vos
KMPDC0161EÁ
P1V, P2V, TG
P1H, P2H
SG
RG
TG (P2V) - P1H
Parameter
Pulse width
Rise and fall time
Pulse width
Rise and fall time
Duty ratio
Pulse width
Rise and fall time
Duty ratio
Pulse width
Rise and fall time
Overlap time
Symbol
Tpwv
Tprv, Tpfv
Tpwh
Tprh, Tpfh
Tpws
Tprs, Tpfs
Tpwr
Tprr, Tpfr
Tovr
Min.
1
50
50
5
3
Typ.
20
10
50
10
50
15
-
Max.
-
Unit
µs
ns
ns
ns
%
ns
ns
%
ns
ns
µs
5
CCD image sensor
S9037/S9038 series
■ Dimensional outlines (unit: mm)
S9037-0902
S9037-1002
WINDOW 28.6
ACTIVE AREA 24.58
2.54
22.9
22.4
8.2
22.4
8.2
22.9
0.096
0.096
WINDOW 16.3
ACTIVE AREA
12.29
2.54
34.0
44.0
INDEX MARK
PIN No. 1
3.0
(24 ×) 0.5
(24 ×) 0.5
4.8
4.4
3.8
4.4
3.8
2.4
3.0
PHOTOSENSITIVE SURFACE
4.8
PHOTOSENSITIVE SURFACE
2.4
INDEX MARK
PIN No. 1
KMPDA0153EB
KMPDA0154EA
S9038-0902S
S9038-1002S
WINDOW 16.3
WINDOW 28.6
ACTIVE AREA
12.29
22.9
4.0
22.4
19.0
8.2
22.9
22.4
4.0
8.2
19.0
0.096
0.096
ACTIVE AREA 24.58
2.54
2.54
44.0
34.0
52.0
42.0
60.0
50.0
3.0
(24 ×) 0.5
7.7
7.3
6.7
7.7
7.3
6.7
4.8
TE-COOLER
1.0
3.0
TE-COOLER
PHOTOSENSITIVE SURFACE
4.8
INDEX MARK
PIN No. 1
PHOTOSENSITIVE SURFACE
1.0
INDEX MARK
PIN No. 1
(24 ×) 0.5
KMPDA0155EA
6
KMPDA0156EA
CCD image sensor
S9037/S9038 series
■ Dimensional outlines of windowless types (unit: mm)
S9037-0902N
S9037-1002N
WINDOW 28.6
ACTIVE AREA
12.29
ACTIVE AREA 24.58
2.54
22.9
22.4
4.5
22.4
4.5
22.9
0.096
0.096
WINDOW 16.3
2.54
34.0
44.0
INDEX MARK
PIN No. 1
INDEX MARK
PIN No. 1
PHOTOSENSITIVE SURFACE
4.8
(24 ×) 0.5
(24 ×) 0.5
2.4
3.0
2.4
3.0
4.8
PHOTOSENSITIVE SURFACE
KMPDA0165EA
KMPDA0166EA
S9038-0902N
S9038-1002N
WINDOW 16.3
WINDOW 28.6
ACTIVE AREA
12.29
22.9
4.0
22.4
19.0
4.5
22.9
22.4
4.0
4.5
19.0
0.096
0.096
ACTIVE AREA 24.58
2.54
2.54
44.0
34.0
52.0
42.0
60.0
50.0
(24 ×) 0.5
3.0
(24 ×) 0.5
7.7
7.7
4.8
TE-COOLER
1.0
3.0
TE-COOLER
PHOTOSENSITIVE SURFACE
4.8
INDEX MARK
PIN No. 1
PHOTOSENSITIVE SURFACE
1.0
INDEX MARK
PIN No. 1
KMPDA0167EA
KMPDA0168EA
■ P in c o n n e c tio n s
P in
No.
1
2
3
4
Sym bol
RD
OS
OD
OG
5
SG
6
7
8
9
P2H
P1H
10
IG 2 H
11
IG 1 H
12
IS H
13
TG
14
15
16
17
18
19
20
21
22
23
24
P2V
P1V
NC
NC
NC
NC
SS
NC
NC
NC
RG
S 9 0 3 7 s e r ie s
D e s c r ip tio n
R e s e t d r a in
O u tp u t tr a n s is to r s o u r c e
O u tp u t tr a n s is to r d r a in
O u tp u t g a te
S u m m in g g a te
C C D h o r iz o n ta l r e g is te r c lo c k - 2
C C D h o r iz o n ta l r e g is te r c lo c k - 1
T e s t p o in t ( h o r iz o n ta l in p u t
g a te - 2 )
T e s t p o in t ( h o r iz o n ta l in p u t
g a te - 1 )
T e s t p o in t ( h o r iz o n ta l in p u t
s o u rc e)
T r a n s fe r g a te
R em a rk
+12 V
E xternal R 2 = 2.2 kΩ
+15 V
+3 V
S am e tim ing as
P 2H
R e s e t g a te
SG
P2H
P1H
GND
IG 2 H
GND
IG 1 H
S h o r te d to R D
IS H
S am e tim ing as
P 2V
TG
C C D v e r tic a l r e g is te r c lo c k - 2
C C D v e r tic a l r e g is te r c lo c k - 1
S u b s tr a te ( G N D )
Sym bol
RD
OS
OD
OG
GND
P2V
P1V
Th1
Th2
PP+
SS
NC
NC
NC
RG
S 9 0 3 8 s e r ie s
D e s c r ip tio n
R e s e t d r a in
O u tp u t tr a n s is to r s o u r c e
O u tp u t tr a n s is to r d r a in
O u tp u t g a te
S u m m in g g a te
C C D h o r iz o n ta l r e g is te r c lo c k - 2
C C D h o r iz o n ta l r e g is te r c lo c k - 1
T e s t p o in t ( h o r iz o n ta l in p u t
g a te - 2 )
T e s t p o in t ( h o r iz o n ta l in p u t
g a te - 1 )
T e s t p o in t ( h o r iz o n ta l in p u t
s o u rc e)
T r a n s fe r g a te
R em a rk
+12 V
E xternal R L = 2.2 kΩ
+15 V
+3 V
S am e tim ing as
P 2H
GND
GND
S h o r te d to R D
S am e tim ing as
P 2V
C C D v e r tic a l r e g is te r c lo c k - 2
C C D v e r tic a l r e g is te r c lo c k - 1
T h e r m is to r
T h e r m is to r
T E - c o o le r T E - c o o le r +
S u b s tr a te ( G N D )
R e s e t g a te
7
CCD image sensor
S9037/S9038 series
■ Specifications of built-in TE-cooler (Typ.)
Parameter
Symbol
Condition
S9038-0902
S9038-1002
Unit
Ω
Internal resistance
Rint Ta=25 °C
2.5
1.2
Maximum current *8
Imax Tc *9=Th *10=25 °C
1.5
3.0
A
Maximum voltage
Vmax Tc *9=Th *10=25 °C
3.8
3.6
V
M axim um heat absorption *11 Qmax
3.4
5.1
W
Maximum temperature
70
70
°C
of heat radiating side
*8: Maximum current Imax:
If the current greater than this value flows into the thermoelectric cooler, the heat absorption begins to decrease due to the
Joule heat. It should be noted that this value is not the damage threshold value. To protect the thermoelectric cooler and
maintain stable operation, the supply current should be less than 60 % of this maximum current.
*9: Temperature of the cooling side of thermoelectric cooler.
*10: Temperature of the heat radiating side of thermoelectric cooler.
*11: Maximum heat absorption Qmax.
This is a theoretical heat absorption level that offsets the temperature difference in the thermoelectric cooler when the
maximum current is supplied to the unit.
(Typ. Ta=25 ˚C)
6
30
20
0
3
-10
2
-20
-30
1
-30
-40
2.0
0
0
3
-10
2
-20
0.5
1.0
1.5
20
4
4
0
6
30
10
10
0
VOLTAGE vs. CURRENT
CCD TEMPERATURE vs. CURRENT
5
5
1
(Typ. Ta=25 ˚C)
7
VOLTAGE (V)
VOLTAGE vs. CURRENT
CCD TEMPERATURE vs. CURRENT
CCD TEMPERATURE (˚C)
7
VOLTAGE (V)
S9038-1002S
0
1
CURRENT (A)
2
3
4
CCD TEMPERATURE (˚C)
S9038-0902S
-40
CURRENT (A)
KMPDB0178EA
KMPDB0179EA
■ Specifications of built-in temperature sensor
A chip thermistor is built in the same package with a CCD chip, and the CCD chip temperature can be monitored with it. A relation
between the thermistor resistance and absolute temperature is expressed by the following equation.
RESISTANCE
The characteristics of the thermistor used are as follows.
R (298K) = 10 kΩ
B (298K / 323K) = 3450 K
(Typ. Ta=25 ˚C)
1 MΩ
R1 = R2 × expB (1 / T1 - 1 / T2)
where R1 is the resistance at absolute temperature T1 (K)
R2 is the resistance at absolute temperature T2 (K)
B is so-called the B constant (K)
100 kΩ
10 kΩ
220
240
260
280
300
TEMPERATURE (K)
KMPDB0111EA
8
CCD image sensor
S9037/S9038 series
■ Precaution for use (Electrostatic countermeasures)
● Handle these sensors with bare hands or wearing cotton gloves. In addition, wear anti-static clothing and use a wrist band with
an earth ring, in order to prevent electrostatic damage due to electrical charges from friction.
● Avoid directly placing these sensors on a work-desk or work-bench that may carry an electrostatic charge.
● Provide ground lines or ground connection with the work-floor, work-desk and work-bench to allow static electricity to discharge.
● Ground the tools used to handle these sensors, such as tweezers and soldering irons.
It is not always necessary to provide all the electrostatic measures stated above. Implement these measures according to the
amount of damage that occurs.
■ Element cooling/heating temperature incline rate
Element cooling/heating temperature incline rate should be set at less than 5 K/min.
Information furnished by HAMAMATSU is believed to be reliable. However, no responsibility is assumed for possible inaccuracies or omissions.
Specifications are subject to change without notice. No patent rights are granted to any of the circuits described herein. ©2007 Hamamatsu Photonics K.K.
HAMAMATSU PHOTONICS K.K., Solid State Division
1126-1 Ichino-cho, Higashi-ku, Hamamatsu City, 435-8558 Japan, Telephone: (81) 53-434-3311, Fax: (81) 53-434-5184, www.hamamatsu.com
U.S.A.: Hamamatsu Corporation: 360 Foothill Road, P.O.Box 6910, Bridgewater, N.J. 08807-0910, U.S.A., Telephone: (1) 908-231-0960, Fax: (1) 908-231-1218
Germany: Hamamatsu Photonics Deutschland GmbH: Arzbergerstr. 10, D-82211 Herrsching am Ammersee, Germany, Telephone: (49) 08152-3750, Fax: (49) 08152-2658
France: Hamamatsu Photonics France S.A.R.L.: 19, Rue du Saule Trapu, Parc du Moulin de Massy, 91882 Massy Cedex, France, Telephone: 33-(1) 69 53 71 00, Fax: 33-(1) 69 53 71 10
United Kingdom: Hamamatsu Photonics UK Limited: 2 Howard Court, 10 Tewin Road, Welwyn Garden City, Hertfordshire AL7 1BW, United Kingdom, Telephone: (44) 1707-294888, Fax: (44) 1707-325777
North Europe: Hamamatsu Photonics Norden AB: Smidesvägen 12, SE-171 41 Solna, Sweden, Telephone: (46) 8-509-031-00, Fax: (46) 8-509-031-01
Italy: Hamamatsu Photonics Italia S.R.L.: Strada della Moia, 1/E, 20020 Arese, (Milano), Italy, Telephone: (39) 02-935-81-733, Fax: (39) 02-935-81-741
Cat. No. KMPD1067E04
Oct. 2007 DN
9