PHOTODIODE GaAsP photodiode Diffusion type Red sensitivity extended type Features Applications l Low dark current l High stability l Red sensitivity extended type l Analytical instruments l Color identification ■ General ratings / Absolute maximum ratings Type No. G1735 G1736 G1737 G1738 G1740 G3297 Dimensional outline/ Window material * ➀/K ➁/K ➂/K ➃/R ➄/R ➅/L Package Active area size Effective active area TO-18 TO-5 TO-8 Ceramic Ceramic TO-18 (mm) 1.3 × 1.3 2.7 × 2.7 5.6 × 5.6 1.3 × 1.3 5.6 × 5.6 1.3 × 1.3 (mm2) 1.66 7.26 29.3 1.66 29.3 1.66 Absolute maximum ratings Operating Storage Reverse temperature temperature voltage Topr Tstg VR Max. (V) (°C) (°C) 5 -30 to +80 -40 to +85 ■ Electrical and optical characteristics (Typ. Ta=25 °C, unless otherwise noted) Photo sensitivity S (A/W) Terminal Temp. Rise time Dark Short circuit capacitance coefficient tr current current Ct of VR=0 V Isc ID VR=0 V ID Type No. Max. RL=1 kΩ GaP He-Ne 100 lx TCID f=10 kHz LED laser λp 560 nm 633 nm Min. Typ. V4=10 mV V4=1 V (nm) (nm) (pF) (µA) (µA) (pA) (pA) (times/°C) (µs) G1735 0.2 0.25 2 20 0.5 250 G1736 0.8 1.1 5 50 1.8 1200 G1737 4 5 10 100 10 4500 0.4 0.22 0.29 1.07 400 to 760 710 G1738 0.2 0.25 2 20 0.5 250 G1740 4 5 10 100 10 4500 G3297 1.5 1.8 2 20 0.5 250 * Window material K: borosilicate glass, L: lens type borosilicate glass, R: resin coating Spectral Peak response sensitivity range wavelength λ λp Shunt resistance Rsh VR=10 mV NEP Min. Typ. (GΩ) (GΩ) (W/Hz1/2) 5 25 2.0 × 10-15 2 15 3.2 × 10-15 1 5 4.5 × 10-15 5 25 2.0 × 10-15 1 5 4.5 × 10-15 5 25 2.0 × 10-15 Diffusion type GaAsP photodiode ■Spectral response ■Photo sensitivity temperature characteristic (Typ.) (Typ. Ta=25 ˚C) +1.5 TEMPERATURE COEFFICIENT (%/˚C) 0.5 PHOTO SENSITIVITY (A/W) 0.4 0.3 0.2 0.1 0 200 400 600 +1.0 +0.5 0 -0.5 200 800 400 600 800 WAVELENGTH (nm) WAVELENGTH (nm) KGPDB0024EA ■Rise time vs. load resistance ■Dark current vs. reverse voltage (Typ. Ta=25 ˚C, VR=0 V) 10 ms 1 ms (Typ. Ta=25 ˚C) 1 nA G1737, G1740 G1737, G1740 100 pA DARK CURRENT G1736 RISE TIME KGPDB0025EA 100 µs 10 µs G1735, G1738 G3297 G1736 10 pA 1 pA 1 µs G1735, G1738, G3297 100 ns 2 10 103 104 105 100 fA 0.001 106 LOAD RESISTANCE (Ω) 0.01 0.1 1 10 REVERSE VOLTAGE (V) KGPDB0026EA ■Shunt resistance vs. ambient temperature KGPDB0027EA ■Short circuit current linearity (Typ. VR=10 mV) 100 10 TΩ OUTPUT CURRENT (A) SHUNT RESISTANCE -2 10 G1735, G1738, G3297 1 TΩ G1736 100 GΩ 10 GΩ G1737, G1740 1 GΩ (Typ. Ta=25 ˚C, A light source fully illuminated) 100 MΩ RL=100 Ω -4 10 -6 10 -8 10 10-10 10-12 -14 10 DEPENDENT ON NEP 10 MΩ -20 -16 0 20 40 60 80 AMBIENT TEMPERATURE (˚C) 10 10-16 10-14 10-12 10-10 10-8 10-6 10-4 10-2 100 INCIDENT LIGHT LEVEL (lx) KGPDB0028EA KGPDB0008EA GaAsP photodiode Diffusion type ■Dimensional outlines (unit: mm) ➀ G1735 9.1 ± 0.2 5.4 ± 0.2 4.1 ± 0.2 0.45 LEAD 14 0.45 LEAD 2.9 PHOTOSENSITIVE SURFACE 2.4 PHOTOSENSITIVE SURFACE 8.1 ± 0.1 20 4.7 ± 0.1 WINDOW 5.9 ± 0.1 3.55 ± 0.2 WINDOW 3.0 ± 0.2 ➁ G1736 5.08 ± 0.2 2.54 ± 0.2 CONNECTED TO CASE CONNECTED TO CASE Borosilicate glass window may extend a maximum of 0.2 mm beyond the upper surface of the cap. Borosilicate glass window may extend a maximum of 0.1 mm beyond the upper surface of the cap. KGPDA0012EA ➂ G1737 ➃ G1738 CATHODE TERMINAL MARK 6.0 ± 0.2 13.9 ± 0.2 5.0 ± 0.2 12.35 ± 0.1 5.0 ± 0.2 1.5 ± 0.2 PHOTOSENSITIVE SURFACE 0.6 1.9 PHOTOSENSITIVE SURFACE 0.45 LEAD ACTIVE AREA 15 WINDOW 10.5 ± 0.1 KGPDA0013EA 14 7.5 ± 0.2 MARK ( 1.4) 0.45 LEAD 3.0 ± 0.2 CONNECTED TO CASE Borosilicate glass window may extend a maximum of 0.2 mm beyond the upper surface of the cap. KGPDA0014EA KGPDA0002EA GaAsP photodiode ➅ G3297 2.15 ± 0.3 ➄ G1740 Diffusion type 5.4 ± 0.2 10.1 ± 0.1 4.65 ± 0.1 8.9 ± 0.1 10.5 0.45 LEAD 4.5 ± 0.2 2.4 2.0 ± 0.1 0.7 PHOTOSENSITIVE SURFACE 0.3 PHOTOSENSITIVE SURFACE 14 ACTIVE AREA 0.5 LEAD 2.54 ± 0.2 9.2 ± 0.3 7.4 ± 0.2 8.0 ± 0.3 ANODE TERMINAL MARK CONNECTED TO CASE Coating resin may extend a maximum of 0.1 mm beyond the upper surface of the package. KGPDA0010EA KGPDA0009EA Information furnished by HAMAMATSU is believed to be reliable. However, no responsibility is assumed for possible inaccuracies or omissions. Specifications are subject to change without notice. No patent rights are granted to any of the circuits described herein. ©2001 Hamamatsu Photonics K.K. HAMAMATSU PHOTONICS K.K., Solid State Division 1126-1 Ichino-cho, Hamamatsu City, 435-8558 Japan, Telephone: (81) 053-434-3311, Fax: (81) 053-434-5184, http://www.hamamatsu.com U.S.A.: Hamamatsu Corporation: 360 Foothill Road, P.O.Box 6910, Bridgewater, N.J. 08807-0910, U.S.A., Telephone: (1) 908-231-0960, Fax: (1) 908-231-1218 Germany: Hamamatsu Photonics Deutschland GmbH: Arzbergerstr. 10, D-82211 Herrsching am Ammersee, Germany, Telephone: (49) 08152-3750, Fax: (49) 08152-2658 France: Hamamatsu Photonics France S.A.R.L.: 8, Rue du Saule Trapu, Parc du Moulin de Massy, 91882 Massy Cedex, France, Telephone: 33-(1) 69 53 71 00, Fax: 33-(1) 69 53 71 10 United Kingdom: Hamamatsu Photonics UK Limited: 2 Howard Court, 10 Tewin Road, Welwyn Garden City, Hertfordshire AL7 1BW, United Kingdom, Telephone: (44) 1707-294888, Fax: (44) 1707-325777 North Europe: Hamamatsu Photonics Norden AB: Smidesvägen 12, SE-171 41 Solna, Sweden, Telephone: (46) 8-509-031-00, Fax: (46) 8-509-031-01 Italy: Hamamatsu Photonics Italia S.R.L.: Strada della Moia, 1/E, 20020 Arese, (Milano), Italy, Telephone: (39) 02-935-81-733, Fax: (39) 02-935-81-741 Cat. No. KGPD1003E01 Apr. 2001 DN