HANBit HMD8M32M16 32Mbyte(8Mx32) 72-pin F/P Mode 2K Ref. SIMM Design 5V Part No. HMD8M32M16, HMD8M32M16G GENERAL DESCRIPTION The HMD8M32M16 is a 8M x 32 bit dynamic RAM high density memory module. The module consists of sixteen CMOS 4M x 4bit DRAMs in 24-pin SOJ packages mounted on a 72-pin, double-sided, FR-4-printed circuit board. A 0.1 or 0.22uF decoupling capacitor is mounted on the printed circuit board for each DRAM components. The module is a single In-line Memory Module with edge connections and is intended for mounting in to 72-pin edge connector sockets. All module components may be powered from a single 5V DC power supply and all inputs and outputs are TTL-compatible. PIN ASSIGNMENT FEATURES w Part Identification PIN SYMBOL PIN SYMBOL PIN SYMBOL PIN SYMBOL HMD8M32M16--2048 Cycles/32ms Ref, Solder 1 Vss 19 A10 37 NC 55 DQ11 HMD8M32M16G--2048 Cycles/32ms Ref, Gold 2 DQ0 20 DQ4 38 NC 56 DQ27 w Access times : 50, 60ns 3 DQ16 21 DQ20 39 Vss 57 DQ12 w High-density 32MByte design 4 DQ1 22 DQ5 40 /CAS0 58 DQ28 w Single + 5V ±0.5V power supply 5 DQ17 23 DQ21 41 /CAS2 59 Vcc w JEDEC standard pinout 6 DQ2 24 DQ6 42 /CAS3 60 DQ29 w FP(Fast Page) mode operation 7 DQ18 25 DQ22 43 /CAS1 61 DQ13 w TTL compatible inputs and outputs 8 DQ3 26 DQ7 44 /RAS0 62 DQ30 w FR4-PCB design OPTIONS 9 DQ19 27 DQ23 45 /RAS1 63 DQ14 10 Vcc 28 A7 46 NC 64 DQ31 11 NC 29 NC(A11) 47 /W 65 DQ15 12 A0 30 Vcc 48 NC 66 NC -5 13 A1 31 A8 49 DQ8 67 PD1 -6 14 A2 32 A9 50 DQ24 68 PD2 15 A3 33 /RAS1 51 DQ9 69 PD3 16 A4 34 /RAS0 52 DQ25 70 PD4 17 A5 35 NC 53 DQ10 71 NC 18 A6 36 NC 54 DQ26 72 Vss MARKING w Timing 50ns access 60ns access w Packages 72-pin SIMM M PERFORMANCE RANGE SIMM TOP VIEW SPEED tRAC tCAC tRC tPC -5 50ns 13ns 90ns 35ns -6 60ns 15ns 110ns 40ns Note: A11 is not used for HMD8M32M16 PIN NAMES Pin Name Function Pin Name Function Pin Name Function A0-A10 Address Input(2K Ref) /RAS0, /RAS1 Row Address Strobe Vss Ground A0-A11 Address Input(4K Ref) /CAS0 - /CAS3 Column Address Strobe NC No Connection DQ0-DQ31 Data In/Out PD1 - PD4 Presence Detect Vcc Power(+5V) /W Read/Write Input URL:www.hbe.co.kr REV.1.0 (August.2002) 1 HANBit Electronics Co.,Ltd. HANBit HMD8M32M16 FUNCTIONAL BLOCK DIAGRAM /CAS0 /RAS0 /CAS DQ1 /RAS DQ2 U0 /OE DQ3 /W A0-A10(A11). DQ4 DQ1 DQ2 DQ3 /CAS DQ1 /RAS DQ2 U1 /OE DQ3 /W A0-A10(A11). DQ4 DQ1 DQ2 DQ3 DQ4 A0-A10(A11) /CAS DQ1 U2 /RAS DQ2 /OE DQ3 /W A0-A10(A11). DQ4 DQ1 DQ2 DQ3 U10 DQ4 A0-A10(A11) /CAS DQ1 /RAS DQ2 U3 /OE DQ3 /W A0-A10(A11). DQ4 DQ1 DQ2 DQ3 U11 DQ4 A0-A10(A11) /CAS DQ1 U4 /RAS DQ2 /OE DQ3 /W A0-A10(A11). DQ4 DQ1 DQ2 DQ3 U12 DQ4 A0-A10(A11) /CAS DQ1 /RAS DQ2 U5 /OE DQ3 /W A0-A10(A11). DQ4 DQ1 DQ2 DQ3 U13 DQ4 A0-A10(A11) /CAS DQ1 U6 /RAS DQ2 /OE DQ3 /W A0-A10(A11). DQ4 DQ1 DQ2 DQ3 U14 DQ4 A0-A10(A11) /CAS DQ1 U7 /RAS DQ2 /OE DQ3 /W A0-A10(A11). DQ4 DQ1 DQ2 DQ3 DQ4 /CAS /RAS /OE A0-A10(A11) /W DQ4 U8 /CAS /RAS /OE A0-A10(A11) U9 /RAS1 /W /CAS /RAS /OE /W /CAS1 /CAS /RAS /OE /W /CAS /RAS /OE /W /CAS2 /CAS /RAS /OE /W /CAS /RAS /OE /W /CAS3 /CAS /RAS /OE /W U15 /W A0-A10 (A11) URL:www.hbe.co.kr REV.1.0 (August.2002) 2 HANBit Electronics Co.,Ltd. HANBit HMD8M32M16 ABSOLUTE MAXIMUM RATINGS PARAMETER SYMBOL RATING VIN ,OUT -1V to 7.0V Voltage on Vcc Supply Relative to Vss Vcc -1V to 7.0V Power Dissipation PD 16W TSTG -55oC to 150oC Voltage on Any Pin Relative to Vss Storage Temperature Short Circuit Output Current IOS 50mA w Permanent device damage may occur if " Absolute Maximum Ratings" are exceeded. Functional operation should be restricted to the conditions as detailed in the operational sections of this data sheet. Exposure to absolute maximum rating conditions for extended periods may affect device reliability. RECOMMENDED DC OPERATING CONDITIONS ( Voltage reference to VSS, TA=0 to 70 o C ) PARAMETER SYMBOL MIN TYP. MAX UNIT Supply Voltage Vcc 4.5 5.0 5.5 V Ground Vss 0 0 0 V Input High Voltage VIH 2.4 - Vcc+1 V Input Low Voltage VIL -1.0 - 0.8 V DC AND OPERATING CHARACTERISTICS SYMBOL SPEED MIN MAX UNITS -5 - 1760 mA -6 - 1600 mA - 32 mA -5 - 1760 mA -6 - 1600 mA -5 - 1440 mA -6 - 1280 mA - 16 mA -5 - 1760 mA -6 - 1600 mA Il(L) -80 80 µA IO(L) -80 80 µA VOH 2.4 - V VOL - 0.4 V ICC1 ICC2 ICC3 ICC4 ICC5 ICC6 ICC1 : Operating Current * (/RAS , /CAS , Address cycling @tRC=min.) ICC2 : Standby Current ( /RAS=/CAS=VIH ) ICC3 : /RAS Only Refresh Current * ( /CAS=V IH, /RAS, Address cycling @tRC=min ) URL:www.hbe.co.kr REV.1.0 (August.2002) 3 HANBit Electronics Co.,Ltd. HANBit HMD8M32M16 ICC4 : Fast Page Mode Current * (/RAS=VIL, /CAS, Address cycling @tPC=min ) ICC5 : Standby Current (/RAS=/CAS=Vcc-0.2V ) ICC6 : /CAS-Before-/RAS Refresh Current * (/RAS and /CAS cycling @t RC=min ) IIL : Input Leakage Current (Any input 0V ≤ VIN ≤ 6.5V, all other pins not under test = 0V) IOL : Output Leakage Current (Data out is disabled, 0V ≤ VOUT ≤ 5.5V VOH : Output High Voltage Level (IOH= -5mA ) VOL : Output Low Voltage Level (IOL = 4.2mA ) * NOTE: ICC1, ICC3, ICC4 and ICC6 are dependent on output loading and cycle rates. Specified values are obtained with the output open. ICC is specified as an average current. In ICC1 and ICC3, address cad be changed maximum once while /RAS=VIL. In ICC4, address can be changed maximum once within one page mode cycle. o CAPACITANCE ( TA=25 C, Vcc = 5V, f = 1Mz ) DESCRIPTION SYMBOL MIN MAX UNITS Input Capacitance (A0-A10) CIN1 - 80 pF Input Capacitance (/W) C IN2 - 112 pF Input Capacitance (/RAS0) CIN3 - 112 pF Input Capacitance (/CAS0-/CAS3) CIN4 - 112 pF Input/Output Capacitance (DQ0-31) CDQ1 - 112 pF AC CHARACTERISTICS o ( 0 C ≤ TA ≤ 70oC , Vcc = 5V±10%, See notes 1,2.) -5 PARAMETER -6 SYMBOL UNIT MIN MAX MAX Random read or write cycle time tRC Access time from /RAS tRAC 50 60 ns Access time from /CAS tCAC 13 15 ns Access time from column address tAA 25 30 ns /CAS to output in Low-Z tCLZ 3 Output buffer turn-off delay tOFF 3 13 3 15 ns Transition time (rise and fall) tT 2 50 2 50 ns /RAS precharge time tRP 30 /RAS pulse width tRAS 50 /RAS hold time tRSH 13 15 ns /CAS hold time tCSH 60 70 ns /CAS pulse width tCAS 15 10K 20 10K ns /RAS to /CAS delay time tRCD 20 45 20 50 ns /RAS to column address delay time tRAD 15 30 15 35 ns /CAS to /RAS precharge time tCRP 5 URL:www.hbe.co.kr REV.1.0 (August.2002) 4 90 MIN 110 ns 3 ns 30 10K 60 5 ns 10K ns ns HANBit Electronics Co.,Ltd. HANBit HMD8M32M16 Row address set-up time tASR 0 0 ns Row address hold time tRAH 10 10 ns Column address set-up time tASC 0 0 ns Column address hold time tCAH 15 15 ns Column address hold referenced to /RAS tAR 50 55 ns Column Address to /RAS lead time tRAL 30 35 ns Read command set-up time tRCS 0 0 ns Read command hold referenced to /CAS tRCH 0 0 ns Read command hold referenced to /RAS tRRH 0 0 ns Write command hold time tWCH 15 15 ns Write command hold referenced to /RAS tWCR 50 55 ns Write command pulse width tWP 15 15 ns Write command to /RAS lead time tRWL 15 20 ns Write command to /CAS lead time tCWL 15 20 ns Data-in set-up time tDS 0 0 ns Data-in hold time tDH 15 15 ns Data-in hold referenced to /RAS tDHR 50 55 ns Refresh period tREF Write command set-up time tWCS 0 0 ns /CAS setup time (C-B-R refresh) tCSR 10 10 ns /CAS hold time (C-B-R refresh) tCHR 15 15 ns /RAS precharge to /CAS hold time tRPC 5 5 ns Access time from /CAS precharge tCPA Fast page mode cycle time tPC 40 45 ns /CAS precharge time (Fast page) tCP 10 10 ns /RAS pulse width (Fast page ) tRASP 60 /W to /RAS precharge time (C-B-R refresh) tWRP 10 10 ns /W to /RAS hold time (C-B-R refresh) tWRH 10 10 ns /CAS precharge(C-B-R counter test) tCPT 20 30 ns 16 16 35 100K 40 70 100K ns ns ns NOTES 1.An initial pause of 200µs is required after power-up followed by any 8 /RAS-only or /CAS-before-/RAS refresh cycles before proper device operation is achieved. 2.VIH (min) and VIL (max) are reference levels for measuring timing of input signals. Transition times are measured between VIH(min) and VIL(max) and are assumed to be 5ns for all inputs. 3.Measured with a load equivalent to 1TTL loads and 100pF 4.Operation within the tRCD(max) limit insures that tRAC(max) can be met. tRCD(max) is specified as a reference point only. If tRCD is greater than the specified tRCD(max) limit, then access time is controlled exclusively by t CAC. 5.Assumes that tRCD ≥ tRCD(max) 6. tAR, tWCR, tDHR are referenced to tRAD(max) 7.This parameter defines the time at which the output achieves the open circuit condition and is not referenced to V OH URL:www.hbe.co.kr REV.1.0 (August.2002) 5 HANBit Electronics Co.,Ltd. HANBit HMD8M32M16 or VOL. 8. tWCS, tRWD, tCWD and tAWD are non restrictive operating parameter. They are included in the data sheet as electrical characteristic only. If t WCS ≥ tWCS(min) the cycle is an early write cycle and the data out pin will remain high impedance for the duration of the cycle. 9. Either tRCH or tRRH must be satisfied for a read cycle. 10. These parameters are referenced to the /CAS leading edge in early write cycles and to the /W leading edge in readwrite cycles. 11. Operation within the tRAD(max) limit insures that tRAC(max) can be met. tRAD(max) is specified as a reference point only. If tRAD is greater than the specified tRAD(max) limit. then access time is controlled by tAA. URL:www.hbe.co.kr REV.1.0 (August.2002) 6 HANBit Electronics Co.,Ltd. HANBit HMD8M32M16 TIMING DIAGRAMS TIMING WAVEFORM OF READ CYCLE /RAS tRC tRAS VIHVILtCRP /CAS tCSH tRCD tCRP tRSH VIH- tCAS tRAD VILtASR A tRP tRAH tCAH tASC tRAL VIHVIL- ROW ADDRESS COLUMN ADDRESS tRCS /W /OE tRCH tRRH VIHVIL- tOFF tOEZ tAA VIH- tOEA VIL- tCAC tCLZ tRAC DQ0-DQ3(7) VOHVOL- DATA-OUT OPEN TIMING WAVEFORM OF WRITE CYCLE (EARLY WRITE) NOTE : Dout = Open /RAS tRC VIHVILtCRP /CAS tCSH tRCD tCAS tRAD tASR tRAH tCAH tASC ROW ADDRESS COLUMN ADDRESS tCWL tRWL tWCS /OE tRAL VIHVIL- /W tCRP tRSH VIHVIL- A tRP tRAS tWCH VIHtWP VILVIHVILtDS DQ0-DQ3(7) VOHVOL- URL:www.hbe.co.kr REV.1.0 (August.2002) tDH DATA-IN 7 HANBit Electronics Co.,Ltd. HANBit HMD8M32M16 PACKAGING INFORMATION 108.0 mm 3.38 mm R 1.57 mm 101.19 mm 3.18 mm DIA 0.51 mm 21.50 10.16 mm 6.35 mm 72 1 2.03 mm 6.35 mm 1.02 mm 1.27 3.34 mm 6.35 mm 95.25 mm 2.54 mm 0.25 mm MAX MIN 1.29 ±0.08mm Gold : 1.04±0.10 mm 1.27 Solder:0.914±0.10mm ORDERING INFORMATION Part Number Density Org. Package Vcc SPEED HMD8M32M16G-5 32MByte 8MX 32bit 72 Pin-SIMM 5.0V 50ns HMD8M32M16G-6 32MByte 8MX 32bit 72 Pin-SIMM 5.0V 60ns URL:www.hbe.co.kr REV.1.0 (August.2002) 8 HANBit Electronics Co.,Ltd.