HANBit HMS4M16F16G SRAM MODULE 8Mbyte(4M x 16-Bit) 80-Pin SMM 5V Part No. HMS4M16F16G GENERAL DESCRIPTION The HMS4M16F16G is a high-speed static random access memory (SRAM) module containing 4,194,304 words organized in a x16-bit configuration. The module consists of sixteen 1M x 4 SRAMs in TSOP package is mounted on a 80-pin, doublesided, FR4-printed circuit board. The HMS4M16F16 is a SMM(Stackable Memory Module) designed and is intended for mounting into two 40-pin connector sockets. Two decoders are used to select chips and used to enable the module’s 4 bytes independently. Output enable (/OE) and write enable (/WE) can set the memory input and output. Data is written into the SRAM memory when write enable (/WE) and chip enable (/CE) inputs are both LOW. Reading is accomplished when /WE remains HIGH and /CE and output enable (/OE) are LOW. For reliability, this SRAM module is designed as multiple power and ground pin. All module components may be powered from a single +5V DC power supply and all inputs and outputs are fully TTL-compatible. FEATURES w Access times : 10, 12, 15, 17 and 20ns w High-density 8MByte design w High-reliability, high-speed design w Single + 5V ±10% power supply w Easy memory expansion /CE and /OE functions w All inputs and outputs are TTL-compatible w Fully Static Operation -- No Clock or Refresh required w Industry-standard pinout w FR4-PCB design PIN ASSIGNMENT 40-PIN P1 Connector 40-PIN P2 Connector PIN SYMBOL PIN SYMBOL PIN SYMBOL PIN SYMBOL 1 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 17 18 19 20 Vcc A0 A1 A2 A3 A4 Vss A5 A6 A7 A8 A9 A10 Vss A11 A12 A13 A14 A15 Vcc 21 22 23 24 25 26 27 28 29 30 31 32 33 34 35 36 37 38 39 40 Vcc A16 A17 A18 A19 A20 Vss A21 FLOOR_CTRL3 FLOOR_CTRL1 NC FLOOR_CTRL2 /CS0 /CS1 /OE /WE0 /WE1 NC NC Vcc 1 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 17 18 19 20 Vcc DQ0 DQ1 DQ2 DQ3 DQ4 Vss DQ5 DQ6 DQ7 DQ8 DQ9 DQ10 Vss DQ11 DQ12 DQ13 DQ14 DQ15 Vcc 21 22 23 24 25 26 27 28 29 30 31 32 33 34 35 36 37 38 39 40 Vcc NC NC NC NC NC Vss NC NC NC NC NC NC Vss NC NC NC NC NC Vcc SMM TOP VIEW URL: www.hbe.co.kr Rev. 1.0 (September / 2002) 1 HANBit Electronics Co.,Ltd. HANBit HMS4M16F16G FUNCTIONAL BLOCK DIAGRAM DQ0 – DQ15 A0 – A19 /CE0l A0-A19 /WE /OE A0-A19 /WE /OE /CE02 A0-A19 /WE /OE A0-A19 /WE /OE /CE03 A-A19 /WE /OE A0-A19 /WE /OE A0-A19 /WE /OE U2 DQ0-3 /CE U3 /CE11 A0-A19 /WE /OE DQ4-7 /CE U4 DQ8-11 /CE U5 /CE12 DQ12-15 /CE U6 DQ0-3 /CE U7 /CE13 DQ4-7 /CE U8 DQ8-11 /CE /CE14 U9 DQ12-15 /CE U11 DQ0-3 /CE U12 DQ4-7 /CE A0-A19 /WE /OE U13 A0-A19 /WE /OE U18 DQ12-15 A0-A19 /WE /OE U15 A0-A19 /WE /OE /CE04 A0-A19 /WE /OE A0-A19 /WE /OE DQ8-11 /CE /CE DQ0-3 /CE U16 DQ4-7 /CE A0-A19 /WE /OE U17 DQ8-11 A0-A19 /WE /OE U18 DQ12-15 /CE /CE /OE /WE URL: www.hbe.co.kr Rev. 1.0 (September / 2002) 2 HANBit Electronics Co.,Ltd. HANBit HMS4M16F16G A(20) A0 A(21) A1 OUT1 /CE01 OUT2 /CE02 /E1 OUT3 /CE03 FLOOR_CTRL1 E2 OUT4 /CE04 FLOOR_CTRL2 E3 /CS0 74F138 A(20) A0 A(21) A1 /CS1 OUT1 /CE11 OUT2 /CE12 /E1 OUT3 /CE13 E2 OUT4 /CE14 E3 74F138 URL: www.hbe.co.kr Rev. 1.0 (September / 2002) 3 HANBit Electronics Co.,Ltd. HANBit HMS4M16F16G TRUTH TABLE MODE /OE /CE /WE OUTPUT POWER STANDBY X H X HIGH-Z STANDBY NOT SELECTED H L H HIGH-Z ACTIVE READ L L H DOUT ACTIVE WRITE X L L DIN ACTIVE ABSOLUTE MAXIMUM RATINGS PARAMETER SYMBOL RATING VIN,OUT -0.5V to +7.0V Voltage on Vcc Supply Relative to Vss VCC -0.5V to +7.0V Power Dissipation PD 16W o -65 C to +150oC 0oC to +70oC Voltage on Any Pin Relative to Vss Storage Temperature TSTG Operating Temperature TA w Stresses greater than those listed under " Absolute Maximum Ratings" may cause permanent damage to the device. This is a stress rating only and functional operation of the device at these or any other conditions above those indicated in the operating section of this specification is not implied. Exposure to absolute maximum rating conditions for extended periods may affect reliability. RECOMMENDED DC OPERATING CONDITIONS ( TA=0 to 70 o C ) PARAMETER * SYMBOL MIN TYP. MAX Supply Voltage VCC 4.5V 5.0V 5.5V Ground VSS 0 0 0 Input High Voltage VIH 2.2 - Vcc+0.5V** Input Low Voltage VIL -0.5* - 0.8V VIL(Min.) = -2.0V ac (Pulse Width ≤ 10ns) for I ≤ 20 mA ** VIH(Min.) = Vcc+2.0V ac (Pulse Width ≤ 10ns) for I ≤ 20 mA DC AND OPERATING CHARACTERISTICS (1)(0oC ≤ TA ≤ 70 oC ; Vcc = 5V ± 0.5V ) PARAMETER Input Leakage Current Output Leakage Current TEST CONDITIONS VIN =Vss to Vcc /CE=VIH or /OE =VIH or /WE=VIL VOUT=Vss to VCC SYMBOL MIN MAX UNITS ILI -32 32 µA IL0 -32 32 µA 2.4 Output High Voltage IOH = -4.0Ma VOH Output Low Voltage IOL = 8.0Ma VOL V 0.4 V * Vcc=5.0V, Temp=25 oC URL: www.hbe.co.kr Rev. 1.0 (September / 2002) 4 HANBit Electronics Co.,Ltd. HANBit HMS4M16F16G DC AND OPERATING CHARACTERISTICS (2) DESCRIPTION Power Supply Current: Operating Power Supply Current :Standby TEST CONDITIONS MAX SYMBOL UNIT -10 -12 -15 lCC 2560 2400 2240 mA lSB 960 960 960 mA lSB1 160 160 160 mA Min. Cycle, 100% Duty /CE=VIL, VIN=VIH or VIL, IOUT=0mA Min. Cycle, /CE=VIH f=0MHZ, /CE≥VCC-0.2V, VIN≥ VCC-0.2V or VIN≤0.2V CAPACITANCE DESCRIPTION TEST CONDITIONS SYMBOL MAX UNIT Input /Output Capacitance VI/O=0V CI/O 128 pF Input Capacitance VIN=0V CIN 112 pF * NOTE : Capacitance is sampled and not 100% tested AC CHARACTERISTICS (0oC ≤ TA ≤ 70 oC ; Vcc = 5V ± 0.5V, unless otherwise specified) TEST CONDITIONS PARAMETER VALUE Input Pulse Level 0 to 3V Input Rise and Fall Time 3ns Input and Output Timing Reference Levels 1.5V Output Load See below Output Load (B) for tHZ, tLZ, tWHZ, tOW, tOLZ & tOHZ Output Load (A) VL=1.5V +5.0V 50Ω DOUT Z0=50Ω URL: www.hbe.co.kr Rev. 1.0 (September / 2002) 480Ω DOUT 30pF 5 255Ω 5pF* HANBit Electronics Co.,Ltd. HANBit HMS4M16F16G READ CYCLE -10 PARAMETER -12 -15 SYMBOL UNIT MIN MAX MIN MAX MIN MAX Read Cycle Time tRC 10 - 12 - 15 - ns Address Access Time tAA - 10 - 12 - 15 ns Chip Select to Output tCO - 10 - 12 - 15 ns Output Enable to Output tOE - 5 - 6 - 7 ns Chip Enable to Low-Z Output tLZ 3 - 3 - 3 - ns Output Enable to Low-Z Output tOLZ 0 - 0 - 0 - ns Output Disable to High-Z Output tOHZ 0 5 0 6 0 7 ns Chip Disable to High-Z Output tHZ 0 5 0 6 0 7 ns Output Hold from Address Change tOH 3 - 3 - 3 - ns Chip Select to Power Up Time tPU 0 - 0 - 0 - ns Chip Select to Power Down Time tPD - 10 12 - 15 ns WRITE CYCLE PARAMETER -10 SYMBOL -12 -15 MIN MAX MIN MAX MIN MAX UNIT Write Cycle Time tWC 10 - 12 - 15 - ns Chip Select to End of Write tCW 7 - 8 - 10 - ns Address Set-up Time tAS 0 - 0 - 0 - ns Address Valid to End of Write tAW 7 - 8 - 10 - ns Write Pulse Width (/OE High) tWP 7 - 8 - 10 - ns Write Recovery Time tWR 0 - 0 - 0 - ns Write to Output High-Z tWHZ 0 5 0 6 0 7 ns Data to Write Time Overlap tDW 5 - 6 - 7 - ns Data Hold from Write Time tDH 0 - 0 - 0 - ns End of Write to Output Low-Z tOW 3 - 3 - 3 - ns TIMING DIAGRAMS Please refer to timing diagram chart(II) FUNCTIONAL DESCRIPTION /CE /WE /OE MODE I/O PIN SUPPLY CURRENT H X* X Not Select High-Z I SB, I SB1 L H H Output Disable High-Z ICC L H L Read DOUT ICC L L X Write DIN ICC Note: X means Don't Care URL: www.hbe.co.kr Rev. 1.0 (September / 2002) 6 HANBit Electronics Co.,Ltd. HANBit HMS4M16F16G ORDERING INFORMATION Part Number Density Org. Package HMS4M16F16G-10 8MByte 4M×16bit 80Pin-SMM HMS4M16F16G-12 8MByte 4M×16bit HMS4M16F16G-15 8MByte HMS4M16F16G-17 HMS4M16F16G-20 Component Vcc SPEED 16EA 5.0V 10ns 80Pin-SMM 16EA 5.0V 12ns 4M×16bit 80Pin-SMM 16EA 5.0V 15ns 8MByte 4M×16bit 80Pin-SMM 16EA 5.0V 17ns 8MByte 4M×16bit 80Pin-SMM 16EA 5.0V 20ns Number ` PACKAGE DIMENSIONS Unit : mm 150.00± 0.2 5.08± 0.2 3.15 1 5.08± 0.2 21 3.15 1 21 20.20 26.50± 0.2 20 40 20 P2 P1 3.15 URL: www.hbe.co.kr Rev. 1.0 (September / 2002) 40 3.15 7 HANBit Electronics Co.,Ltd. HANBit HMS4M16F16G 4.6 Connector Configuration - Module PCB Bottom: 177985-1(AMP), 0.8mm Free Height Plugs, 40pins - Board top: 177986-1(AMP), 0.8mm Free Height Receptacles ,40pins URL: www.hbe.co.kr Rev. 1.0 (September / 2002) 8 HANBit Electronics Co.,Ltd.