HANBIT HMS51232J4V

HANBit
HMS51232J4V
HAN
SRAM MODULE 2Mbyte (512Kx32Bit), 68-Pin JLCC Packaging,3.3V
BIT
Part No.
HMS51232J4V
GENERAL DESCRIPTION
The HMS51232J4V is a static random access memory (SRAM) module containing 524,288 words organized in a
x32-bit configuration. The module consists of four 512K x 8 SRAMs mounted on a 68-pin, single-sided, FR4printed circuit board.
Four chip enable inputs, (/CE1, /CE2, /CE3 and /CE4) are used to enable the module’s 4 bytes independently.
Output enable (/OE) and write enable (/WE) can set the memory input and output.
Data is written into the SRAM memory when write enable (/WE) and chip enable (/CE) inputs are both LOW.
Reading is accomplished when /WE remains HIGH and /CE and output enable (/OE) are LOW.
For reliability, this SRAM module is designed as multiple power and ground pin. All module components may be
powered from a single +3.3V DC power supply and all inputs and outputs are fully LVTTL-compatible..
FEATURES
OPTIONS
MARKING
Š Timing
15ns access
-15
17ns access
-17
20ns access
-20
25ns access
-25
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Š Packages
68-pin JLCC
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Š Access time : 15, 17, 20 and 25ns
Š High-density 2MByte design
Š High-reliability, low-power design
Š Single +3V ±0.3V power supply
Š Three state output and LVTTL-compatible
Š FR4-PCB design
Š Low profile 68-Pin JLCC
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PIN ASSIGNMENT
J
68-Pin JLCC
TOP VIEW
1
HANBit Electronics Co.,Ltd.
HANBit
HMS51232J4V
PIN DESCRIPTION
DQ0 – DQ31
Data Inputs/Outputs
A0 – A18
Address Inputs
/WE
Write Enable
/CE1-4
/OE
Chip Selects
Output Enable
Vcc
Power Supply
Vss
Ground
BLOCK DIAGRAM
/CS1
/CS2
/CS3
/CS4
/WE
/OE
A0-18
512Kx8
512Kx8
8
512Kx8
8
8
DQ8-15
DQ0-7
512Kx8
8
DQ16-23
DQ24-31
TRUTH TABLE
MODE
/OE
/CE
/WE
DQ
POWER
STANDBY
X
H
X
HIGH-Z
STANDBY
NOT SELECTED
H
L
H
HIGH-Z
ACTIVE
READ
L
L
H
Dout
ACTIVE
WRITE
X
L
L
Din
ACTIVE
2
HANBit Electronics Co.,Ltd.
HANBit
HMS51232J4V
ABSOLUTE MAXIMUM RATINGS
PARAMETER
SYMBOL
RATING
VIN,OUT
-0.5V to +4.6V
Voltage on Vcc Supply Relative to Vss
VCC
-0.5V to +4.6V
Power Dissipation
PD
4W
TSTG
-65oC to +150oC
Voltage on Any Pin Relative to Vss
Storage Temperature
Operating Temperature
TA
0oC to +70oC
Š Stresses greater than those listed under " Absolute Maximum Ratings" may cause permanent damage to the device.
This is a stress rating only and functional operation of the device at these or any other conditions above those indicated
in the operating section of this specification is not implied. Exposure to absolute maximum rating conditions for extended
periods may affect reliability.
RECOMMENDED DC OPERATING CONDITIONS
PARAMETER
*
( TA=0 to 70 o C )
SYMBOL
MIN
TYP.
MAX
Supply Voltage
VCC
3.0V
3.3V
3.6V
Ground
VSS
0
0
0
Input High Voltage
VIH
2.0
-
Vcc+0.3V**
Input Low Voltage
VIL
-0.5*
-
0.8V
VIL(Min.) = -2.0V (Pulse Width ≤ 10ns) for I ≤ 20 mA
** VIH(Min.) = Vcc+2.0V (Pulse Width ≤ 10ns) for I ≤ 20 mA
DC AND OPERATING CHARACTERISTICS (1)
(0oC ≤ TA ≤ 70 oC ; Vcc = 3.3V ± 0.3V, Unless otherwise specified)
PARAMETER
Input Leakage Current
Output Leakage Current
TEST CONDITIONS
VIN = Vss to Vcc
/CE=VIH or /OE =VIH or /WE=VIL
VOUT=Vss to VCC
SYMBO
L
MIN
MAX
UNITS
ILI
-2
2
µA
IL0
-2
2
µA
2.4
Output High Voltage
IOH = -4.0mA
VOH
Output Low Voltage
IOL = 8.0mA
VOL
V
0.4
V
* Vcc=3.3V, Temp=25 oC
DC AND OPERATING CHARACTERISTICS (2)
MAX
DESCRIPTION
Power Supply
Current:Operating
Power Supply
Current:Standby
TEST CONDITIONS
Min. Cycle, 100% Duty
/CE=VIL, VIN=VIH or VIL,
IOUT=0mA
SYMBOL
-10
-12
-15
UNIT
lCC
205
200
195
mA
Min. Cycle, /CE=VIH
lSB
50
50
50
mA
f=0MHZ, /CE≥VCC-0.2V,
VIN≥ VCC-0.2V or VIN≤0.2V
lSB1
10
10
10
mA
3
HANBit Electronics Co.,Ltd.
HANBit
HMS51232J4V
CAPACITANCE
DESCRIPTION
TEST CONDITIONS
SYMBOL
MAX
UNIT
Input /Output Capacitance
VI/O=0V
CI/O
8
pF
Input Capacitance
VIN=0V
CIN
7
pF
* NOTE : Capacitance is sampled and not 100% tested
AC CHARACTERISTICS (0oC ≤ TA ≤ 70 oC ; Vcc = 3.3V ± 0.3V, unless otherwise specified)
TEST CONDITIONS
PARAMETER
VALUE
Input Pulse Level
0 to 3V
Input Rise and Fall Time
3ns
Input and Output Timing Reference Levels
1.5V
Output Load
See below
Output Load (B)
for tHZ, tLZ, tWHZ, tOW, tOLZ & tOHZ
Output Load (A)
VL=1.5V
+3.3V
50Ω
DOUT
319Ω
DOUT
Z0=50Ω
30pF
353Ω
5pF*
READ CYCLE
-10
PARAMETER
-12
-15
SYMBOL
UNIT
MIN
MAX
MIN
MAX
MIN
MAX
Read Cycle Time
tRC
10
-
12
-
15
-
ns
Address Access Time
tAA
-
10
-
12
-
15
ns
Chip Select to Output
tCO
-
10
-
12
-
15
ns
Output Enable to Output
tOE
-
5
-
6
-
7
ns
Chip Enable to Low-Z Output
tLZ
3
-
3
-
3
-
ns
Output Enable to Low-Z Output
tOLZ
0
-
0
-
0
-
ns
Chip Disable to High-Z Output
tHZ
0
5
0
6
0
7
ns
Output Disable to High-Z Output
tOHZ
0
5
0
6
0
7
ns
4
HANBit Electronics Co.,Ltd.
HANBit
HMS51232J4V
Output Hold from Address Change
tOH
3
-
3
-
3
-
ns
Chip Select to Power Up Time
tPU
0
-
0
-
0
-
ns
Chip Select to Power Down Time
tPD
-
15
-
12
-
15
ns
WRITE CYCLE
-10
PARAMETER
-12
-15
SYMBOL
UNIT
MIN
MAX
MIN
MAX
MIN
MAX
Write Cycle Time
tWC
10
-
12
-
10
-
ns
Chip Select to End of Write
tCW
7
-
8
-
10
-
ns
Address Set-up Time
tAS
0
-
0
-
0
-
ns
Address Valid to End of Write
tAW
7
-
8
-
10
-
ns
Write Pulse Width (/OE High)
tWP
7
-
8
-
10
-
ns
Write Pulse Width (/OE Low)
tWP1
10
-
12
-
15
-
ns
Write Recovery Time
tWR
0
-
0
-
0
-
ns
Write to Output High-Z
tWHZ
0
5
0
6
0
7
ns
Data to Write Time Overlap
tDW
5
-
6
-
7
-
ns
Data Hold from Write Time
tDH
0
-
0
-
0
-
ns
End of Write to Output Low-Z
tOW
3
-
3
-
3
-
ns
TIMING DIAGRAMS
See Part No. HMS51232M4/Z4
FUNCTIONAL DESCRIPTION
/CE
/WE
/OE
MODE
I/O PIN
SUPPLY CURRENT
H
X*
X
Not Select
High-Z
I SB, I SB1
L
H
H
Output Disable
High-Z
ICC
L
H
L
Read
DOUT
ICC
L
L
X
Write
DIN
ICC
Note: X means Don't Care
5
HANBit Electronics Co.,Ltd.
HANBit
HMS51232J4V
PACKAGE DIMMENSIONS
4.30±0.20mm
24.71±0.25mm
0.46±0.20mm
23.44±0.25mm
1.278±0.20mm
6
HANBit Electronics Co.,Ltd.
HANBit
HMS51232J4V
ORDERING INFORMATION
1
2
3
HMS
4
5
6
7
8
512 32 J 4V-15
15ns Access Time
HANBit
Component, 3.3V
Memory
Modules
JLCC
x32bit
SRAM
512K
1. - Product Line Identifier
HANBit ------------------------------------------------------ H
2. - Memory Modules
3. - SRAM
4. - Depth : 512K
5. - Width : x 32bit
6. - Package Code
JLCC ------------------------------------------------------- J
7. - Number of Memory Components-----4, 3.3V-------V
8. - Access time
15 ----------------------------------------------------------- 15ns
17 ----------------------------------------------------------- 17ns
20 ----------------------------------------------------------- 20ns
25 ----------------------------------------------------------- 25ns
7
HANBit Electronics Co.,Ltd.