HITTITE HMC247_08

HMC247
v01.1007
PHASE SHIFTERS - CHIP
3
400° ANALOG PHASE SHIFTER
5 - 18 GHz
Typical Applications
Features
The HMC247 is ideal for:
Wide Bandwidth: 5 - 18 GHz
• Fiber Optics
Phase Shift: >400°
• Military
Single Positive Voltage Control
• Test Equipment
Small Size: 2.3 x 1.6 x 0.1 mm
Functional Diagram
General Description
The HMC247 is an Analog Phase Shifter die which
is controlled via an analog control voltage from 0 to
+10V. The HMC247 provides a continuously variable
phase shift of 0 to 300 degrees at 9 GHz, and 0 to
100 degrees at 18 GHz, with consistent insertion loss
versus phase shift. The phase shift is monotonic with
respect to the control voltage. The control port has a
modulation bandwidth of 50 MHz. The low insertion
loss and compact size enable this part to be used
in a wide range of applications, including the phase
adjustment of clocks in fiber optic systems and test
equipment. All data is measured with the chip in a 50
ohm test fixture, connected via 0.076 mm (3 mil) ribbon
bonds of minimal length <0.31 mm (<12 mils).
Electrical Specifi cations, TA = +25° C, 50 Ohm System
Parameter
3-2
Frequency (GHz)
Min.
Typ.
Phase Shift Range:
5 - 10 GHz
10 - 13 GHz
13 - 18 GHz
180
135
45
400
200
120
Max.
Units
Insertion Loss
5 - 10 GHz
10 - 18 GHz
8
4
Return Loss (Input and Output)
5 - 18 GHz
8
Control Voltage Range
5 - 18 GHz
0 - 10
Volt
Modulation Bandwidth
5 - 18 GHz
50
MHz
degrees
degrees
degrees
12
7
dB
dB
dB
Phase Voltage Sensitivity
5 - 18 GHz
40
deg /Volt
Insertion Phase Temperature Sensitivity
5 - 18 GHz
0.5
deg /°C
For price, delivery, and to place orders, please contact Hittite Microwave Corporation:
20 Alpha Road, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373
Order On-line at www.hittite.com
HMC247
v01.1007
400° ANALOG PHASE SHIFTER
5 - 18 GHz
-2
-4
+25C
+85C
-55C
-6
Phase Shift vs. Control Voltage
NORMALIZED PHASE SHIFT (degrees)
INSERTION LOSS (dB)
0
-8
-10
500
6 GHz
12 GHz
18 GHz
400
200
100
0
0
1
2
3
4
5
6
7
8
9
10
0
1
2
3
Vctl (V)
5
6
7
8
9
10
Insertion Loss vs. Frequency
600
0
+25C
+85C
-55C
500
-2
INSERTION LOSS (dB)
NORMALIZED PHASE SHIFT (degrees)
4
Vctl (V)
Phase Shift vs. Frequency @ Vctl = 10V
(Relative to Vctl = 0V)
400
300
200
100
-4
-6
0V
2V
4V
6V
8V
10V
-8
-10
-12
0
-14
5
6
7
8
9
10 11
12
13 14 15
16 17
18
5
6
7
8
9
FREQUENCY (GHz)
10 11
12
13 14 15
16 17
18
FREQUENCY (GHz)
Input Return Loss vs. Frequency,
Vctl = 0 to +10V
Output Return Loss vs. Frequency,
Vctl = 0 to +10V
0
0
-5
-5
RETURN LOSS (dB)
RETURN LOSS (dB)
3
300
PHASE SHIFTERS - CHIP
Insertion Loss vs. Control Voltage @ 12 GHz
-10
-15
-20
-10
-15
-20
5
6
7
8
9
10 11
12
13 14 15
FREQUENCY (GHz)
16 17
18
5
6
7
8
9
10 11
12
13 14 15
16 17
18
FREQUENCY (GHz)
For price, delivery, and to place orders, please contact Hittite Microwave Corporation:
20 Alpha Road, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373
Order On-line at www.hittite.com
3-3
HMC247
v01.1007
400° ANALOG PHASE SHIFTER
5 - 18 GHz
Second Harmonics vs. Control
Voltage, Pin = -10 dBm
Input IP3 vs. Control Voltage
35
100
25
60
IP3 (dBm)
6 GHz
12 GHz
18 GHz
40
20
15
6 GHz
12 GHz
18 GHz
10
20
5
0
0
0
1
2
3
4
5
6
7
8
9
0
10
4
Insertion Loss vs. Pin @ 7 GHz
INSERTION LOSS (dB)
0V
5V
10V
-4
-6
-2
-4
0V
5V
10V
-6
-8
-10
-5
0
5
10
15
20
-10
-15
25
INPUT POWER (dBm)
NORMALIZED PHASE SHIFT (degrees)
-2
-4
0V
5V
10V
-8
-10
-5
0
5
10
INPUT POWER (dBm)
-5
0
5
10
15
20
25
Phase Shift vs. Pin @ 7 GHz
0
-6
-10
INPUT POWER (dBm)
Insertion Loss vs. Pin @ 18 GHz
INSERTION LOSS (dB)
10
0
-2
-10
-15
8
Insertion Loss vs. Pin @ 12 GHz
0
-10
-15
6
Vctl (V)
-8
3-4
2
Vctl (V)
INSERTION LOSS (dB)
PHASE SHIFTERS - CHIP
3
2nd HARMONICS (dBc)
30
80
15
20
25
5
0V
5V
10V
3
1
-1
-3
-5
-10
-5
0
INPUT POWER (dBm)
For price, delivery, and to place orders, please contact Hittite Microwave Corporation:
20 Alpha Road, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373
Order On-line at www.hittite.com
5
HMC247
v01.1007
400° ANALOG PHASE SHIFTER
5 - 18 GHz
Phase Shift vs. Pin @ 18 GHz
0V
5V
10V
0.3
0.1
-0.1
-0.3
-0.5
-10
-5
0
INPUT POWER (dBm)
5
0.5
0V
5V
10V
0.3
3
0.1
-0.1
-0.3
-0.5
-10
-5
0
INPUT POWER (dBm)
Absolute Maximum Ratings
Control Voltage (Vctl)
+11 Vdc
Reverse Current
5 mA
Input Power (RFin)
+30 dBm
Channel Temperature (Tc)
150 °C
Continuous Pdiss (T = 85 °C)
(derate 28 mW/°C above 85 °C)
1.83 W
Thermal Resistance
(junction to die bottom)
35.6 °C/W
Storage Temperature
-65 to +150 °C
Operating Temperature
-55 to +85 °C
For price, delivery, and to place orders, please contact Hittite Microwave Corporation:
20 Alpha Road, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373
Order On-line at www.hittite.com
5
PHASE SHIFTERS - CHIP
0.5
NORMALIZED PHASE SHIFT (degrees)
NORMALIZED PHASE SHIFT (degrees)
Phase Shift vs. Pin @ 12 GHz
3-5
HMC247
v01.1007
400° ANALOG PHASE SHIFTER
5 - 18 GHz
Assembly Diagram
PHASE SHIFTERS - CHIP
3
Pad Descriptions
3-6
Pad Number
Function
Description
1, 2
RFIN
Port is DC blocked.
3
Vctl
Phase shift control pin. Application of voltage between 0 and 10 volts causes
the transmission phase to change. The DC equivalent circuit is a series connected diode resistor
4, 5
RFOUT
Port is DC blocked.
GND
The backside of the die must be connected to RF / DC ground.
Interface Schematic
For price, delivery, and to place orders, please contact Hittite Microwave Corporation:
20 Alpha Road, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373
Order On-line at www.hittite.com
HMC247
v01.1007
400° ANALOG PHASE SHIFTER
5 - 18 GHz
Outline Drawing
1. ALL DIMENSIONS ARE IN INCHES [MM]
2. TIE ALL UNLABLED BOND PADS TO GROUND.
3. DIE THICKNESS IS .004”
4. TYPICAL BOND PAD IS .004” SQUARE.
5. BACKSIDE METALIZATION: GOLD.
6. BOND PAD METALIZATION: GOLD.
PHASE SHIFTERS - CHIP
3
Handling Precautions
Follow these precautions to avoid permanent damage.
Storage: All bare die are placed in either Waffle or Gel based ESD protective containers, and then sealed in an ESD protective bag
for shipment. Once the sealed ESD protective bag has been opened, all die should be stored in a dry nitrogen environment.
Cleanliness: Handle the chips in a clean environment. DO NOT attempt to clean the chip using liquid cleaning systems.
Static Sensitivity: Follow ESD precautions to protect against ESD strikes.
Transients: Suppress instrument and bias supply transients while bias is applied. Use shielded signal and bias cables to minimize
inductive pick-up.
General Handling: Handle the chip along the edges with a vacuum collet or with a sharp pair of bent tweezers. The surface of the
chip has fragile air bridges and should not be touched with vacuum collet, tweezers, or fingers.
Mounting
The chip is back-metallized and can be die mounted with electrically conductive epoxy. The mounting surface should be clean
and fl at.
Epoxy Die Attach: Apply a minimum amount of epoxy to the mounting surface so that a thin epoxy fillet is observed around the
perimeter of the chip once it is placed into position. Cure epoxy per the manufacturer’s schedule.
Wire Bonding
Ball or wedge bond with 0.025mm (1 mil) diameter pure gold wire. Thermosonic wirebonding with a nominal stage temperature of
150 deg. C and a ball bonding force of 40 to 50 grams or wedge bonding force of 18 to 22 grams is recommended. Use the minimum
level of ultrasonic energy to achieve reliable wirebonds. Wirebonds should be started on the chip and terminated on the package or
substrate. All bonds should be as short as possible <0.31mm (12 mils).
For price, delivery, and to place orders, please contact Hittite Microwave Corporation:
20 Alpha Road, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373
Order On-line at www.hittite.com
3-7