HMC607


Design Assistance

Customised Pack Sizes / Qtys

Assembly Assistance

Support for all industry recognised
supply formats:

Die handling consultancy

Hi-Rel die qualification

Hot & Cold die probing

Electrical test & trimming
o Waffle Pack
o Gel Pak
o Tape & Reel

Onsite storage, stockholding &
scheduling

100% Visual Inspection
o MIL-STD 883 Condition A
o MIL-STD 883 Condition A

On-site failure analysis

Bespoke 24 Hour monitored
storage systems for secure long
term product support

On-site failure analysis
Contact
[email protected]
For price, delivery and to place orders
HMC607
www.analog.com
www.micross.com
Analog Devices Welcomes
Hittite Microwave Corporation
NO CONTENT ON THE ATTACHED DOCUMENT HAS CHANGED
www.analog.com
www.hittite.com
THIS PAGE INTENTIONALLY LEFT BLANK
HMC607
v04.0809
SWITCHES - CHIP
4
GaAs MMIC HIGH ISOLATION
SPDT SWITCH, DC - 15 GHz
Typical Applications
Features
The HMC607 is ideal for:
High Isolation: >50 dB @ 10 GHz
• Telecom Infrastructure
Low Insertion Loss: 1.4 dB Typical @ 6.0 GHz
• Microwave Radio & VSAT
Non-Reflective Design
• Military Radios, Radar & ECM
Die Size: 2.05 x 1.1 x 0.1 mm
• Space Systems
• Test Instrumentation
Functional Diagram
General Description
The HMC607 is a broadband high isolation nonreflective GaAs MESFET SPDT MMIC chip. Covering
DC to 15 GHz, the switch features >55 dB isolation at
lower frequencies and >45 dB at higher frequencies.
The switch operates using complementary negative
control voltage logic lines of -5/0V and requires no
bias supply.
Electrical Specifi cations, TA = +25° C, With 0/-5V Control, 50 Ohm System
Parameter
Frequency
Insertion Loss
DC - 6 GHz
DC - 10 GHz
DC - 15 GHz
Isolation*
DC - 6 GHz
DC - 10 GHz
DC - 15 GHz
Min.
55
50
45
Typ.
Max.
Units
1.4
1.7
2.7
1.7
2.5
3.4
dB
dB
dB
65
60
55
dB
dB
dB
Return Loss
“On State”
DC - 6 GHz
DC - 15 GHz
17
11
dB
dB
Return Loss RF1, RF2
“Off State”
DC - 6 GHz
DC - 15 GHz
13
17
dB
dB
Input Power for 1 dB Compression
0.5 - 15 GHz
21
26
dBm
Input Third Order Intercept
(Two-Tone Input Power= +7 dBm Each Tone, 1 MHz Tone Separation)
0.5 - 15 GHz
44
49
dBm
Switching Characteristics
tRISE, tFALL (10/90% RF)
tON, tOFF (50% CTL to 10/90% RF)
DC - 15 GHz
3
5
ns
ns
*Isolation data taken with probe on the die
4 - 32
For price, delivery, and to place orders, please contact Hittite Microwave Corporation:
20 Alpha Road, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373
Order On-line at www.hittite.com
HMC607
v04.0809
GaAs MMIC HIGH ISOLATION
SPDT SWITCH, DC - 15 GHz
Insertion Loss
Isolation*
0
-15
-1
ISOLATION (dB)
-2
+25 C
+85 C
-55 C
-3
-4
RF1
RF2
-30
-45
4
-60
-75
-5
-90
0
3
6
9
12
15
0
3
6
FREQUENCY (GHz)
Return Loss
12
15
0.1 and 1 dB Input Compression Point
30
-5
RFC
RF1, RF2 on
RF1, RF2 off
COMPRESSION POINT (dBm)
RETURN LOSS (dB)
9
FREQUENCY (GHz)
-15
-25
-35
25
20
SWITCHES - CHIP
INSERTION LOSS (dB)
0
0.1 dB Compression Point
1 dB Compression Point
15
10
0
2
4
6
8
10
12
14
0
2
4
6
8
10
FREQUENCY (GHz)
FREQUENCY (GHz)
12
14
16
Input Third Order Intercept Point
60
55
IP3 (dBm)
50
45
+25 C
+85 C
-55 C
40
35
30
0
2
4
6
8
10
FREQUENCY (GHz)
12
14
16
*Isolation data taken with probe on the die
For price, delivery, and to place orders, please contact Hittite Microwave Corporation:
20 Alpha Road, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373
Order On-line at www.hittite.com
4 - 33
HMC607
v04.0809
GaAs MMIC HIGH ISOLATION
SPDT SWITCH, DC - 15 GHz
Absolute Maximum Ratings
SWITCHES - CHIP
4
Control Voltages
RF Input Power (A, A, B, B = 0/-5V)
(0.5 - 6 GHz)
+30 dBm (@ +50 °C)
Control Voltage Range (A, A, B, B)
+1V to -7.5 Vdc
Channel Temperature
150 °C
Thermal Resistance (RTH)
(junction to lead)
94 °C/W
Storage Temperature
-65 to +150 °C
Operating Temperature
-55 to +85 °C
State
Bias Condition
Low
0 to -0.2V @ 10 uA Max.
High
-5V @ 10 uA Typ. to -7V @ 45 uA Typ.
ELECTROSTATIC SENSITIVE DEVICE
OBSERVE HANDLING PRECAUTIONS
Truth Table
Control Input
B
B
Signal Path State
A
A
RFC to RF1
RFC to RF2
OFF
Low
High
Low
High
ON
High
Low
High
Low
OFF
ON
High
Low
Low
High
OFF
OFF
Low
High
High
Low
ON
ON
Caution: Do not “Hot Switch” power levels greater than +27 dBm (A, A, B, B = 0/-5V).
Suggested Driver Circuit for Single Line Control
4 - 34
For price, delivery, and to place orders, please contact Hittite Microwave Corporation:
20 Alpha Road, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373
Order On-line at www.hittite.com
HMC607
v04.0809
GaAs MMIC HIGH ISOLATION
SPDT SWITCH, DC - 15 GHz
Outline Drawing
SWITCHES - CHIP
4
Die Packaging Information [1]
Standard
Alternate
WP-17 (Waffle Pack)
[2]
[1] Refer to the “Packaging Information” section for die
packaging dimensions.
[2] For alternate packaging information contact Hittite
Microwave Corporation.
NOTES:
1. ALL DIMENSIONS ARE IN INCHES [MM]
2. DIE THICKNESS IS .004”
3. TYPICAL BOND PAD IS .004” SQUARE
4. BACKSIDE METALIZATION: GOLD
5. BACKSIDE METAL IS GROUND
6. BOND PAD METALIZATION: GOLD
7. NO CONNECTION REQUIRED FOR UNLABLED BOND PADS.
8. OVERALL DIE SIZE ±.002”
Pad Descriptions
Pad Number
Function
Description
1, 4, 7
RF1, RFC, RF2
This pin is DC coupled and matched to 50 Ohm. Blocking
capacitors are required if RF line potential is not equal to 0V.
2, 10
B
3, 11
B
5, 8
A
6, 9
A
Die Bottom
GND
Interface Schematic
See truth table and control voltage table.
Alternate A & B control pads provided.
Die bottom must be connected to RF ground.
For price, delivery, and to place orders, please contact Hittite Microwave Corporation:
20 Alpha Road, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373
Order On-line at www.hittite.com
4 - 35
HMC607
v04.0809
GaAs MMIC HIGH ISOLATION
SPDT SWITCH, DC - 15 GHz
Assembly Diagram
SWITCHES - CHIP
4
4 - 36
For price, delivery, and to place orders, please contact Hittite Microwave Corporation:
20 Alpha Road, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373
Order On-line at www.hittite.com
HMC607
v04.0809
GaAs MMIC HIGH ISOLATION
SPDT SWITCH, DC - 15 GHz
Mounting & Bonding Techniques for Millimeterwave GaAs MMICs
The die should be attached directly to the ground plane eutectically or with
conductive epoxy (see HMC general Handling, Mounting, Bonding Note).
50 Ohm Microstrip transmission lines on 0.127mm (5 mil) thick alumina thin film
substrates are recommended for bringing RF to and from the chip (Figure 1). If
0.254mm (10 mil) thick alumina thin film substrates must be used, the die should be
raised 0.150mm (6 mils) so that the surface of the die is coplanar with the surface
of the substrate. One way to accomplish this is to attach the 0.102mm (4 mil) thick
die to a 0.150mm (6 mil) thick molybdenum heat spreader (moly-tab) which is then
attached to the ground plane (Figure 2).
0.102mm (0.004”) Thick GaAs MMIC
Wire Bond
0.076mm
(0.003”)
RF Ground Plane
4
Handling Precautions
0.127mm (0.005”) Thick Alumina
Thin Film Substrate
Follow these precautions to avoid permanent damage.
Figure 1.
Storage: All bare die are placed in either Waffle or Gel based ESD protective
containers, and then sealed in an ESD protective bag for shipment. Once the
sealed ESD protective bag has been opened, all die should be stored in a dry
nitrogen environment.
Cleanliness: Handle the chips in a clean environment. DO NOT attempt to clean
the chip using liquid cleaning systems.
0.102mm (0.004”) Thick GaAs MMIC
Wire Bond
0.076mm
(0.003”)
Static Sensitivity: Follow ESD precautions to protect against ESD strikes.
Transients: Suppress instrument and bias supply transients while bias is applied.
Use shielded signal and bias cables to minimize inductive pick-up.
RF Ground Plane
General Handling: Handle the chip along the edges with a vacuum collet or with
a sharp pair of bent tweezers. The surface of the chip has fragile air bridges and
should not be touched with vacuum collet, tweezers, or fingers.
SWITCHES - CHIP
Microstrip substrates should be brought as close to the die as possible in order to
minimize bond wire length. Typical die-to-substrate spacing is 0.076mm (3 mils).
0.150mm (0.005”) Thick
Moly Tab
Mounting
0.254mm (0.010”) Thick Alumina
Thin Film Substrate
The chip is back-metallized and can be die mounted with AuSn eutectic preforms or
with electrically conductive epoxy. The mounting surface should be clean and flat.
Figure 2.
Epoxy Die Attach: Apply a minimum amount of epoxy to the mounting surface so that a thin epoxy fillet is observed around the
perimeter of the chip once it is placed into position. Cure epoxy per the manufacturer’s schedule.
Wire Bonding
Ball or wedge bond with 0.025 mm (1 mil) diameter pure gold wire (DC bias, IF1 and IF2) or Ribbon Bond (RF and LO ports) 0.076
mm x 0.013 mm (3 mil x 0.5 mil) size is recommended. Thermosonic wirebonding with a nominal stage temperature of 150 °C and
a ball bonding force of 40 to 50 grams or wedge bonding force of 18 to 22 grams is recommended. Use the minimum level of ultrasonic energy to achieve reliable wirebonds. Wirebonds should be started on the chip and terminated on the package or substrate.
All bonds should be as short as possible <0.31 mm (12 mils).
For price, delivery, and to place orders, please contact Hittite Microwave Corporation:
20 Alpha Road, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373
Order On-line at www.hittite.com
4 - 37