HITTITE HMC496LP3

HMC496LP3 / 496LP3E
v03.0206
8
SiGe WIDEBAND DIRECT
MODULATOR RFIC, 4.0 - 7.0 GHz
Typical Applications
Features
The HMC496LP3 / HMC496LP3E is suitable for
various modulation systems:
Wideband RF Frequency Range
• Fixed Wireless or WLL
Very Low Noise Floor: -157 dBm/Hz
• U-NII Radios
Low LO Power: -3 to +6 dBm
• 802.11a & HiperLAN WLAN
Differential or Single Ended LO Drive
• C-band Microwave Radios
Single Low Current Supply: +3.0V@ 93 mA
High Carrier Suppression: 34 dBc
MODULATORS - SMT
3 x 3 mm QFN SMT Plastic Package
Functional Diagram
General Description
The HMC496LP3 & HMC496LP3E are low noise
Wideband Direct Quadrature Modulator RFICs
which are ideal for digital modulation applications
from 4.0 - 7.0 GHz including; WLL, U-NII, WLAN &
microwave radios. Housed in a compact 3x3 mm
(LP3) SMT QFN package, the RFIC requires minimal
ex-ternal components & provides a low cost alternative
to more complicated double upconversion architectures. The RF output port is matched to 50 Ohms with
no external components. The LO requires -3 to +6
dBm and can be driven in either differential or singleended mode while the Baseband inputs will support
modulation inputs from DC - 250 MHz typical. This
device is optimized for a supply voltage of +3.0V@
93 mA and will provide stable performance over a
+2.7V to +3.3V range.
Electrical Specifications, See Test Conditions on following page herein.
Parameter
Min.
Frequency Range, RF
Output Power
-1
Output P1dB
Max.
Min.
+2
15
Output Noise Floor
18
Typ.
Max.
Min.
5.7 - 5.9
-1
3
Output IP3
8 - 14
Typ.
4.9 - 5.4
+2
-2
4
14
17
Typ.
Max.
5.9 - 6.4
14
Units
GHz
+1
dBm
4
dBm
17
dBm
-157
-156
-155
dBm/Hz
Carrier Suppression (uncalibrated)
34
34
31
dBc
Sideband Suppression (uncalibrated)
40
39
39
dBc
IM3 Suppression
45
42
41
dBc
RF Port Return Loss
7
9
8
dB
LO Port Return Loss
11
10
10
dB
For price, delivery, and to place orders, please contact Hittite Microwave Corporation:
20 Alpha Road, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373
Order On-line at www.hittite.com
HMC496LP3 / 496LP3E
v03.0206
SiGe WIDEBAND DIRECT
MODULATOR RFIC, 4.0 - 7.0 GHz
Electrical Specifications, (continued)
Parameter
Conditions
Min.
Typ.
Max.
Units
7.0
GHz
RF Output
RF Frequency Range
4.0
RF Return Loss
8
dB
LO Input
LO Frequency Range
4.0
LO Input Power
-3
LO Port Return Loss
+3
7.0
GHz
+9
dBm
10
dB
8
Baseband Port Bandwidth
With 50Ω source & external 10 pF shunt cap to ground.
Refer to HMC496LP3 Application Circuit.
DC
Baseband Input DC Voltage (Vbbdc)
This parameter can be varied in order to optimize
the device performance over temperature and/or supply.
1.0
Baseband Input DC Bias Current (Ibbdc)
Baseband Input Capacitance
DC Power Requirements
1.3
250
MHz
1.6
V
Single-ended
32
μA
Single-ended. De-embeded to the part pin.
0.8
pF
See Test Conditions Below
Supply Voltage (Vcc)
2.7
Supply Current (Icc)
3.0
3.3
93
V
mA
Test Conditions: Unless Otherwise Specified, the Following Test Conditions Were Used
Parameter
Condition
Temperature
+25 °C
Baseband Input Frequency
200 kHz
Baseband Input DC Voltage (Vbbdc)
Baseband Input AC Voltage
1.3V
(Peak to Peak Differential, I and Q)
Baseband Input AC Voltage for OIP3 Measurement (Peak to Peak Differential, I and Q)
Frequency Offset for Output Noise Measurements
Supply & Bias Voltage (Vb1, Vb2, Vcc1, Vcc2)
1.2V
600 mV per tone @ 150 & 250 kHz
20 MHz
+3.0V
LO Input Power
+3 dBm
LO Input Mode
Single-Ended
Mounting Configuration
Sideband & Carrier Suppression
RF Output Mode
MODULATORS - SMT
Baseband Input Port
Refer to HMC496LP3 Application Schematic Herein
Uncalibrated
Differential
Calibrated vs. Uncalibrated Test Results
During the Uncalibrated Sideband and Carrier Suppression tests, care is taken to ensure that the I/Q signal paths from
the Vector Signal Generator (VSG) to the Device Under Test (DUT) are equal. The “Uncalibrated, +25 °C” Sideband
and Carrier Suppression plots were measured at room temperature, while the “Uncalibrated, over Temperature”
Sideband and Carrier Suppression plots represent the worst case uncalibrated suppression levels measured at T=
-40 °C, +25 °C, and +85 °C.
The “Calibrated, +25 °C” Sideband Suppression data was plotted after a manual adjustment of the I/Q amplitude
balance and I/Q phase offset (skew) at +25C, and an LO input power level of + 3 dBm. This adjustment setting was
held constant during tests over LO input power level and temperature. The “Calibrated, over Temperature” plots
represent the worst case calibrated Sideband Suppression levels at T= -40 °C, +25 °C, and +85 °C.
The “Calibrated, +25 °C” Carrier Suppression data was plotted after a manual adjustment of the Ip/In & Qp/Qn DC
offsets at +25 °C, and an LO input power level of + 3 dBm. This adjustment setting was held constant during tests
over LO input power level and temperature. The “Calibrated, over Temperature” plots represent the worst case Carrier
Suppression levels measured at T= -40 °C, +25 °C, and +85 °C.
For price, delivery, and to place orders, please contact Hittite Microwave Corporation:
20 Alpha Road, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373
Order On-line at www.hittite.com
8 - 15
HMC496LP3 / 496LP3E
v03.0206
SiGe WIDEBAND DIRECT
MODULATOR RFIC, 4.0 - 7.0 GHz
Output Noise Floor
and P1dB vs. Frequency
0
OUTPUT POWER
SIDEBAND SUPPRESSION
-20
CARRIER SUPPRESSION
-40
7
-125
6
5
OUTPUT P1dB
-135
4
-140
3
-145
2
1
-150
OUTPUT NOISE FLOOR
-155
0
-1
-160
3rd HARMONIC
-50
-2
-165
-60
SET-UP NOISE FLOOR
-3
-170
4
4.5
5
5.5
6
6.5
7
4
4.5
5
FREQUENCY (GHz)
5.5
6
FREQUENCY (GHz)
6.5
7
6.5
7
Return Loss
0
25
RETURN LOSS (dB)
20
15
10
5
LOP SINGLE ENDED
RFP SINGLE ENDED
-5
-10
-15
4
8 - 16
NOISE (dBm/Hz)
-10
-30
-120
-130
Output IP3 vs. Frequency
OUTPUT IP3 (dBm)
MODULATORS - SMT
10
4.5
5
5.5
6
FREQUENCY (GHz)
6.5
7
4
4.5
5
5.5
6
FREQUENCY (GHz)
For price, delivery, and to place orders, please contact Hittite Microwave Corporation:
20 Alpha Road, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373
Order On-line at www.hittite.com
OUTPUT P1dB (dBm)
8
OUTPUT POWER (dBm), SIDEBAND SUPPR. (dBc),
CARRIER SUPPR. (dBc), 3rd HARMONIC (dBc)
Wideband Performance vs. Frequency
HMC496LP3 / 496LP3E
v03.0206
SiGe WIDEBAND DIRECT
MODULATOR RFIC, 4.0 - 7.0 GHz
Output IP3 & Output Power vs.
LO Power Over Supply@ 5200 MHz
3
15
2
15
2
10
1
10
1
5
0
5
0
0
-1
0
-1
+25 C
+85 C
-40 C
-5
-2
-3
-10
-3
-2
-1
0
1
2
3
4
5
6
7
8
+2.7 V
+3.0 V
+3.3 V
-5
-3
-10
9
-3
-2
-1
0
1
2
LO POWER (dBm)
3
4
5
6
7
8
9
LO POWER (dBm)
Output Noise vs. LO Power
Over Temperature@ 5200 MHz
Output Noise vs. LO Power
Over Supply@ 5200 MHz
-140
OUTPUT NOISE FLOOR (dBm/Hz)
OUTPUT NOISE FLOOR (dBm/Hz)
-140
-145
+25 C
+85 C
-40 C
-150
-155
-160
-165
-170
-145
+2.7 V
+3.0 V
+3.3 V
-150
-155
-160
8
-165
-170
-3
-2
-1
0
1
2
3
4
5
LO POWER (dBm)
6
7
8
9
Sideband Suppression*
vs. LO Power@ 5200 MHz
-3
-2
-1
0
1
2
3
4
5
LO POWER (dBm)
6
7
8
9
Carrier Suppression*
vs. LO Power@ 5200 MHz
-20
-20
UNCALIBRATED, +25C
CARRIER SUPPRESSION (dBc)
SIDEBAND SUPPRESSION (dBc)
-2
MODULATORS - SMT
20
OUTPUT IP3 (dBm)
3
OUTPUT POWER (dBm)
20
OUTPUT POWER (dBm)
OUTPUT IP3 (dBm)
Output IP3 & Output Power vs.
LO Power Over Temperature@ 5200 MHz
UNCALIBRATED,
OVER TEMP
-30
-40
-50
CALIBRATED,
OVER TEMP
CALIBRATED, +25C
-60
UNCALIBRATED, +25C
CALIBRATED, +25C
UNCALIBRATED, OVER TEMP
CALIBRATED, OVER TEMP
-30
-40
-50
-60
-3
-2
-1
0
1
2
3
4
5
LO POWER (dBm)
6
7
8
9
-3
-2
-1
0
1
2
3
4
5
6
7
8
9
LO POWER (dBm)
* See note regarding Calibrated vs. Uncalibrated test results herein.
For price, delivery, and to place orders, please contact Hittite Microwave Corporation:
20 Alpha Road, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373
Order On-line at www.hittite.com
8 - 17
HMC496LP3 / 496LP3E
v03.0206
SiGe WIDEBAND DIRECT
MODULATOR RFIC, 4.0 - 7.0 GHz
4
15
3
15
3
10
2
10
2
5
1
5
1
0
0
0
0
+25 C
+85 C
-40 C
-1
-2
-10
-3
-2
-1
0
1
2
3
4
5
6
7
8
OUTPUT IP3 (dBm)
20
-2
-3
-2
-1
0
1
2
LO POWER (dBm)
5
6
7
8
9
-140
OUTPUT NOISE FLOOR (dBm/Hz)
OUTPUT NOISE FLOOR (dBm/Hz)
4
Output Noise vs. LO Power
Over Supply@ 5800 MHz
-140
-145
-145
+25 C
+85 C
-40 C
-150
+2.7 V
+3.0 V
+3.3 V
-150
-155
-155
-160
-160
-165
-165
-170
-2
-1
0
1
2
3
4
5
LO POWER (dBm)
6
7
8
-3
9
Sideband Suppression*
vs. LO Power@ 5800 MHz
-2
-1
0
1
2
3
4
5
LO POWER (dBm)
6
7
8
9
7
8
9
Carrier Suppression*
vs. LO Power@ 5800 MHz
-20
CARRIER SUPPRESSION (dBc)
-20
SIDEBAND SUPPRESSION (dBc)
3
LO POWER (dBm)
Output Noise vs. LO Power
Over Temperature@ 5800 MHz
-3
-1
-10
9
-170
-30
-40
UNCALIBRATED, +25C
CALIBRATED, +25C
UNCALIBRATED, OVER TEMP
CALIBRATED, OVER TEMP
-50
-60
UNCALIBRATED, +25C
CALIBRATED, +25C
UNCALIBRATED, OVER TEMP
CALIBRATED, OVER TEMP
-30
-40
-50
-60
-3
8 - 18
+2.7 V
+3.0 V
+3.3 V
-5
-2
-1
0
1
2
3
4
5
LO POWER (dBm)
6
7
8
9
-3
-2
-1
0
1
2
3
4
5
6
LO POWER (dBm)
For price, delivery, and to place orders, please contact Hittite Microwave Corporation:
20 Alpha Road, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373
Order On-line at www.hittite.com
OUTPUT POWER (dBm)
4
-5
MODULATORS - SMT
Output IP3 & Output Power vs.
LO Power Over Supply@ 5800 MHz
20
OUTPUT POWER (dBm)
8
OUTPUT IP3 (dBm)
Output IP3 & Output Power vs.
LO Power Over Temperature@ 5800 MHz
HMC496LP3 / 496LP3E
v03.0206
SiGe WIDEBAND DIRECT
MODULATOR RFIC, 4.0 - 7.0 GHz
Absolute Maximum Ratings
-0.5 to +6.0V
LO Input Power
+10 dBm
Baseband Input Voltage
(Reference to GND)
-0.5 to +2.0V
Channel Temperature
150 °C
Continuous Pdiss (T = 85°C)
(Derate 110 mW/°C above 85°C)
7 Watts
Thermal Resistance (Rth)
(junction to lead)
9 °C/Watt
Storage Temperature
-40 to +150 °C
Operating Temperature
-40 to +85 °C
ELECTROSTATIC SENSITIVE DEVICE
OBSERVE HANDLING PRECAUTIONS
8
MODULATORS - SMT
Vcc
Outline Drawing
NOTES:
1. LEADFRAME MATERIAL: COPPER ALLOY
2. DIMENSIONS ARE IN INCHES [MILLIMETERS].
3. LEAD SPACING TOLERANCE IS NON-CUMULATIVE
4. PAD BURR LENGTH SHALL BE 0.15mm MAXIMUM.
PAD BURR HEIGHT SHALL BE 0.05mm MAXIMUM.
5. PACKAGE WARP SHALL NOT EXCEED 0.05mm.
6. ALL GROUND LEADS AND GROUND PADDLE MUST
BE SOLDERED TO PCB RF GROUND.
7. REFER TO HITTITE APPLICATION NOTE FOR SUGGESTED
PCB LAND PATTERN.
Package Information
Part Number
Package Body Material
Lead Finish
MSL Rating
HMC496LP3
Low Stress Injection Molded Plastic
Sn/Pb Solder
MSL1
HMC496LP3E
RoHS-compliant Low Stress Injection Molded Plastic
100% matte Sn
MSL1
Package Marking [3]
[1]
496
XXXX
[2]
496
XXXX
[1] Max peak reflow temperature of 235 °C
[2] Max peak reflow temperature of 260 °C
[3] 4-Digit lot number XXXX
For price, delivery, and to place orders, please contact Hittite Microwave Corporation:
20 Alpha Road, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373
Order On-line at www.hittite.com
8 - 19
HMC496LP3 / 496LP3E
v03.0206
SiGe WIDEBAND DIRECT
MODULATOR RFIC, 4.0 - 7.0 GHz
Pin Descriptions
MODULATORS - SMT
8
Pin Number
Function
1, 4, 9, 12
GND
2, 3
LOP, LON
5, 8, 13
N/C
6, 7
QN, QP
Description
Interface Schematic
These pins and the ground paddle must be connected
to a high quality RF/DC ground.
Differential LO input ports. This device may be driven in either
differential or single ended mode. In single ended mode, one
port should be driven by the LO source while the other port may
be terminated with a 50Ω resistor to ground.
No Connection required. These pins may be connected to RF/
DC ground without affecting performance.
Differential Quadrature baseband input. These are high
impedance ports. The nominal recommended bias voltage is
between 1.2 - 1.4V. The nominal recommended baseband input
voltage is 1.2V peak to peak differential. By adjusting the DC
bias voltage on ports QN & QP, the Carrier Suppression of the
device can be optimized for a specific frequency band and LO
power level. The typical offset voltage for optimization is less
than 15 mV.
The amplitude and phase difference between the I and Q inputs
can be adjusted in order to optimize the Sideband Suppression
for a specific frequency band and LO power level.
10, 11
14, 15
RFN, RFP
IP, IN
RF Output port. This port is matched to 50 Ohms.
A series capacitor should be connected to this port in
order to prevent the DC supply voltage from appearing
on the customer’s PC board.
Differential Quadrature baseband input. These are high
impedance ports. The nominal recommended bias voltage is
between 1.2 - 1.4V. The nominal recommended baseband input
voltage is 1.2V peak to peak differential. By adjusting the DC
bias voltage on ports IN & IP, the Carrier Suppression of the
device can be optimized for a specific frequency band and LO
power level. The typical offset voltage for optimization is less
than 15 mV.
The amplitude and phase difference between the I and Q inputs
can be adjusted in order to optimize the Sideband Suppression
for a specific frequency band and LO power level.
16
8 - 20
VCC
Supply voltage. Set to 3.0V for nominal operation. The nominal
current for this port is 93 mA.
For price, delivery, and to place orders, please contact Hittite Microwave Corporation:
20 Alpha Road, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373
Order On-line at www.hittite.com
HMC496LP3 / 496LP3E
v03.0206
SiGe WIDEBAND DIRECT
MODULATOR RFIC, 4.0 - 7.0 GHz
Evaluation PCB
MODULATORS - SMT
8
List of Materials for Evaluation PCB 107871
Item
Description
J1 - J8
PCB Mount SMA Connector
J9
DC Molex Connector
C1, C2, C5, C6
100 pF Chip Capacitor, 0402 Pkg.
C9
10k pF Chip Capacitor, 0402 Pkg.
C3, C4, C7, C8
10 pF Chip Capacitor, 0402 Pkg.
C15
4.7 uF, Case A, Tantulum
U1
HMC496LP3 / HMC496LP3E Modulator
PCB [2]
107309 Eval Board
[1]
The circuit board used in the final application should
use RF circuit design techniques. Signal lines
should have 50 ohm impedance while the package
ground leads and exposed paddle should be connected directly to the ground plane similar to that
shown. A sufficient number of VIA holes should be
used to connect the top and bottom ground planes.
The evaluation circuit board shown is available from
Hittite upon request.
[1] Reference this number when ordering complete evaluation PCB
[2] Circuit Board Material: Rogers 4350
For price, delivery, and to place orders, please contact Hittite Microwave Corporation:
20 Alpha Road, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373
Order On-line at www.hittite.com
8 - 21
HMC496LP3 / 496LP3E
v03.0206
SiGe WIDEBAND DIRECT
MODULATOR RFIC, 4.0 - 7.0 GHz
Application & Evaluation PCB Schematic
MODULATORS - SMT
8
Note:
Baseband input frequency range is dependent on value of C3, C4, C7 and C8. The value of 10 pF was chosen to give a typical
response of DC - 250 MHz. Input frequency range can be extended up to 1 GHz with possible degradation of LO leakage and
broadband noise floor response by decreasing the value of C3, C4, C7 & C8.
8 - 22
For price, delivery, and to place orders, please contact Hittite Microwave Corporation:
20 Alpha Road, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373
Order On-line at www.hittite.com
HMC496LP3 / 496LP3E
v03.0206
SiGe WIDEBAND DIRECT
MODULATOR RFIC, 4.0 - 7.0 GHz
Characterization Set-up
MODULATORS - SMT
8
For price, delivery, and to place orders, please contact Hittite Microwave Corporation:
20 Alpha Road, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373
Order On-line at www.hittite.com
8 - 23