HITTITE HMC495LP3_08

HMC495LP3 / 495LP3E
v02.0705
MODULATORS - SMT
10
SiGe WIDEBAND DIRECT
MODULATOR RFIC, 250 - 3800 MHz
Typical Applications
Features
The HMC495LP3 / HMC495LP3E is suitable for
various modulation systems:
Wideband RF Frequency Range
• UMTS, GSM or CDMA Basestations
Very Low Noise Floor: -158 dBm/Hz
• Fixed Wireless or WLL
Low LO Power: -6 to +6 dBm
• ISM Transceivers, 900 & 2400 MHz
Differential or Single Ended LO Input
• GMSK, QPSK, QAM, SSB Modulators
Single Low Current Supply: [email protected] 108 mA
Functional Diagram
General Description
High Carrier Suppression: 38 dBc
The HMC495LP3 & HMC495LP3E are low noise
Wideband Direct Quadrature Modulator RFICs which
are ideal for digital modulation applications from 250 3800 MHz including; Cellular/3G, Broadband Wireless
Access & ISM circuits. Housed in a compact 3x3 mm
(LP3) SMT QFN package, the RFIC requires minimal
external components & provides a low cost alternative
to more complicated double upconversion architectures. The RF output port is single-ended and matched
to 50 Ohms with no external components. The LO requires -6 to +6 dBm and can be driven in either differential or single-ended mode while the Baseband inputs will support modulation inputs from DC - 250 MHz
typical. This device is optimized for a supply voltage of
+3.3V @ 108 mA and will provide stable performance
over a +3V to +3.6V range.
Electrical Specifi cations, See Test Conditions on following page herein.
Parameter
Min.
Frequency Range, RF
Output Power
-5
2
Output IP3
Max.
Min.
450 - 960
-7
Output P1dB
Typ.
Typ.
Max.
Min.
1800 - 2200
-8
-6
1
Typ.
Max.
Min.
2100 - 2700
-9
-7
0
-11
Typ.
Max.
Units
3400 - 3800
MHz
-9
dBm
-2
dBm
17
14
14
13
dBm
-159
-158
-158
-157
dBm/Hz
Carrier Suppression (uncalibrated)
38
38
35
34
dBc
Sideband Suppression
(uncalibrated)
34
31
30
28
dBc
IM3 Suppression
59
50
50
56
dBc
RF Port Return Loss
18
17
16
13
dB
LO Port Return Loss
13
8
7
5
dB
Output Noise Floor
CDMA IS95
[email protected] 880 MHz & 1960 MHz
-72
-71.5
N/A
N/A
dBc
Channel Power
-15
-18.4
N/A
N/A
dBm
W-CDMA 3GPP
10 - 10
[email protected] 1960 & 2140 MHz
N/A
-60
-59
N/A
dBc
Channel Power
N/A
-17.3
-14.4
N/A
dBm
For price, delivery, and to place orders, please contact Hittite Microwave Corporation:
20 Alpha Road, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373
Order On-line at www.hittite.com
HMC495LP3 / 495LP3E
v02.0705
SiGe WIDEBAND DIRECT
MODULATOR RFIC, 250 - 3800 MHz
Electrical Specifi cations, (continued)
Parameter
Conditions
Min.
Typ.
Max.
Units
3.8
GHz
RF Output
RF Frequency Range
0.25
RF Return Loss
16
dB
LO Input
0.25
LO Input Power
With 68 Ohm shunt resistor on LO port.
LO Port Return Loss
With 68 Ohm shunt resistor on LO port.
-6
0
3.8
GHz
+6
dBm
7
dB
Baseband Input Port
Baseband Port Bandwidth
With 50Ω source & external 10 pF shunt cap to ground.
Refer to HMC495LP3 Application Circuit.
DC
Baseband Input DC Voltage (Vbbdc)
This parameter can be varied in order to optimize
the device performance over temperature and/or supply.
1.0
Baseband Input DC Bias Current (Ibbdc)
Single-ended Baseband Input Capacitance
DC Power Requirements
1.15
250
MHz
1.2
V
Single-ended.
40
μA
De-embed to the lead of the device.
0.5
pF
See Test Conditions Below
Supply Voltage (Vcc1, Vcc2, Vb1, Vb2)
3
Supply Current (Icc1, Icc2, Ib1, Ib2)
3.3
3.6
108
V
mA
Test Conditions: Unless Otherwise Specifi ed, the Following Test Conditions Were Used
Parameter
Condition
Temperature
+25 °C
Baseband Input Frequency
200 kHz
Baseband Input DC Voltage (Vbbdc)
1.15V
Baseband Input AC Voltage
(Peak to Peak Differential, I and Q)
800 mV
Baseband Input AC Voltage for OIP3 Measurement
(Peak to Peak Differential, I and Q)
400 mV per tone @ 150 & 250 kHz
Frequency Offset for Output Noise Measurements
Supply & Bias Voltage (Vb1, Vb2, Vcc1, Vcc2)
20 MHz
3.3V
LO Input Power
0 dBm
LO Input Mode
Single-Ended
Mounting Configuration
Sideband & Carrier Feedthrough
10
MODULATORS - SMT
LO Frequency Range
Refer to HMC495LP3 Application Schematic Herein
Uncalibrated
Calibrated vs. Uncalibrated Test Results
During the Uncalibrated Sideband and Carrier Suppression tests, care is taken to ensure that the I/Q signal paths from
the Vector Signal Generator (VSG) to the Device Under Test (DUT) are equal. The “Uncalibrated, +25 °C” Sideband
and Carrier Suppression plots were measured at room temperature, while the “Uncalibrated, over Temperature”
Sideband and Carrier Suppression plots represent the worst case uncalibrated suppression levels measured at T=
-40 °C, +25 °C, and +85 °C.
The “Calibrated, + 25 °C” Sideband Suppression data was plotted after a manual adjustment of the I/Q amplitude
balance and I/Q phase offset (skew) at +25 °C, and at each LO input power level. The +25 °C adjustment settings
were held constant during tests over temperature. The “Calibrated, over Temperature” plots represent the worst case
calibrated Sideband Suppression levels at T= -40 °C, +25 °C, and +85 °C.
The “Calibrated, +25 °C” Carrier Suppression data was plotted after a manual adjustment of the Ip/In & Qp/Qn DC
offsets at +25 °C, and at each LO input power level. The +25 °C adjustment settings were held constant during tests
over temperature. The “Calibrated, over Temperature” plots represent the worst case Carrier Suppression levels
measured at T= -40 °C, +25 °C, and +85 °C.
For price, delivery, and to place orders, please contact Hittite Microwave Corporation:
20 Alpha Road, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373
Order On-line at www.hittite.com
10 - 11
HMC495LP3 / 495LP3E
v02.0705
SiGe WIDEBAND DIRECT
MODULATOR RFIC, 250 - 3800 MHz
Output Noise Floor
and P1dB vs. Frequency
-5
-10
-15
-15
-20
-20
-25
-25
SIDEBAND SUPPRESSION
-30
-30
-35
-35
CARRIER SUPPRESSION
-40
-40
-45
-45
-50
-50
-55
3rd HARMONIC
-60
0
400
-55
OUTPUT NOISE (dBm/Hz)
-5
OUTPUT POWER
-10
5
-130
0
-140
-5
-150
-10
-160
-15
SET-UP NOISE FLOOR
-170
0
-60
800 1200 1600 2000 2400 2800 3200 3600 4000
400
-20
800 1200 1600 2000 2400 2800 3200 3600 4000
FREQUENCY (MHz)
FREQUENCY (MHz)
Return Loss
0
20
18
LO (Single-ended)
RF
-5
RETURN LOSS (dB)
16
14
12
10
8
6
-10
-15
-20
4
2
-25
0
0
400
800 1200 1600 2000 2400 2800 3200 3600 4000
FREQUENCY (MHz)
10 - 12
-120
0
Output IP3 vs. Frequency
OUTPUT IP3 (dBm)
MODULATORS - SMT
0
0
400
800 1200 1600 2000 2400 2800 3200 3600 4000
FREQUENCY (MHz)
For price, delivery, and to place orders, please contact Hittite Microwave Corporation:
20 Alpha Road, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373
Order On-line at www.hittite.com
OUTPUT P1dB (dBm)
10
OUTPUT POWER (dBm), CARRIER SUPPR. (dBc)
SIDEBAND SUPPR. (dBc), 3rd HARMONIC (dBc)
Wideband Performance vs. Frequency
HMC495LP3 / 495LP3E
v02.0705
SiGe WIDEBAND DIRECT
MODULATOR RFIC, 250 - 3800 MHz
Output IP3 & Output Power vs.
LO Power Over [email protected] 830 MHz
20
-3
15
-4
15
-4
10
-5
10
-5
5
-6
5
-6
+25 C
+85 C
-40 C
-7
-8
-5
-6
-5
-4
-3
-2
-1
0
1
2
3
4
5
-8
-9
-10
6
-6
-5
-4
-3
-2
LO POWER (dBm)
1
2
3
4
5
6
3
4
5
6
5
6
-140
OUTPUT NOISE (dBm/Hz)
OUTPUT NOISE (dBm/Hz)
0
Output Noise vs. LO Power
Over [email protected] 830 MHz
-140
+25 C
+85 C
-40 C
-145
Vcc= 3.0 Volts
Vcc= 3.3 Volts
Vcc= 3.6 Volts
-145
-150
-150
-155
-155
-160
-5
-4
-3
-2
-1
0
1
2
3
4
5
6
-6
-5
-4
-3
-2
LO POWER (dBm)
10
-1
0
1
2
LO POWER (dBm)
Sideband Suppression*
vs. LO [email protected] 830 MHz
Carrier Suppression*
vs. LO [email protected] 830 MHz
-20
CARRIER SUPPRESSION (dBc)
-20
SIDEBAND SUPPRESSION (dBc)
-1
LO POWER (dBm)
Output Noise vs. LO Power
Over [email protected] 830 MHz
-160
-6
-7
-5
-9
-10
Vcc= 3.0 Volts
Vcc= 3.3 Volts
Vcc= 3.6 Volts
0
MODULATORS - SMT
0
OUTPUT IP3 (dBm)
-3
OUTPUT POWER (dBm)
20
OUTPUT POWER (dBm)
OUTPUT IP3 (dBm)
Output IP3 & Output Power vs.
LO Power Over [email protected] 830 MHz
-30
-40
UNCALIBRATED, +25C
CALIBRATED, +25C
UNCALIBRATED, OVER TEMP
CALIBRATED, OVER TEMP
-50
-60
UNCALIBRATED, +25C
CALIBRATED, +25C
UNCALIBRATED, OVER TEMP
CALIBRATED, OVER TEMP
-30
-40
-50
-60
-6
-5
-4
-3
-2
-1
0
1
2
LO POWER (dBm)
3
4
5
6
-6
-5
-4
-3
-2
-1
0
1
2
LO POWER (dBm)
3
4
* See note titled “Calibrated vs. Uncalibrated test results” herein.
For price, delivery, and to place orders, please contact Hittite Microwave Corporation:
20 Alpha Road, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373
Order On-line at www.hittite.com
10 - 13
HMC495LP3 / 495LP3E
v02.0705
SiGe WIDEBAND DIRECT
MODULATOR RFIC, 250 - 3800 MHz
-3
20
-3
15
-4
15
-4
10
-5
10
-5
+25 C
+85 C
-40 C
5
-6
0
-7
-5
-8
OUTPUT IP3 (dBm)
20
-9
-10
-6
-5
-4
-3
-2
-1
0
1
2
3
4
5
Vcc= 3.0 Volts
Vcc= 3.3 Volts
Vcc= 3.6 Volts
5
0
-7
-5
-8
-9
-10
6
-6
-5
-4
-3
-2
0
1
2
3
4
5
6
3
4
5
6
Output Noise vs. LO Power
Over [email protected] 1900 MHz
-140
OUTPUT NOISE (dBm/Hz)
-140
+25 C
+85 C
-40 C
-145
Vcc= 3.0 Volts
Vcc= 3.3 Volts
Vcc= 3.6 Volts
-145
-150
-150
-155
-155
-160
-5
-4
-3
-2
-1
0
1
2
3
4
5
-6
6
-5
-4
-3
-2
-1
0
1
2
LO POWER (dBm)
LO POWER (dBm)
Sideband Suppression*
vs. LO [email protected] 1900 MHz
Carrier Suppression*
vs. LO [email protected] 1900 MHz
-20
CARRIER SUPPRESSION (dBc)
-20
SIDEBAND SUPPRESSION (dBc)
-1
LO POWER (dBm)
Output Noise vs. LO Power
Over Tempera[email protected] 1900 MHz
OUTPUT NOISE (dBm/Hz)
MODULATORS - SMT
LO POWER (dBm)
-160
-6
-6
-30
-40
UNCALIBRATED, +25 C
CALIBRATED, +25 C
UNCALIBRATED, OVER TEMP
CALIBRATED, OVER TEMP
-50
-60
UNCALIBRATED, +25 C
CALIBRATED, +25 C
UNCALIBRATED, OVER TEMP
CALIBRATED, OVER TEMP
-30
-40
-50
-60
-6
-5
-4
-3
-2
-1
0
1
2
LO POWER (dBm)
3
4
5
6
-6
-5
-4
-3
-2
-1
0
1
2
LO POWER (dBm)
3
* See note titled “Calibrated vs. Uncalibrated test results” herein.
10 - 14
For price, delivery, and to place orders, please contact Hittite Microwave Corporation:
20 Alpha Road, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373
Order On-line at www.hittite.com
4
5
6
OUTPUT POWER (dBm)
10
Output IP3 & Output Power vs.
LO Power Over [email protected] 1900 MHz
OUTPUT POWER (dBm)
OUTPUT IP3 (dBm)
Output IP3 & Output Power vs.
LO Power Over [email protected] 1900 MHz
HMC495LP3 / 495LP3E
v02.0705
SiGe WIDEBAND DIRECT
MODULATOR RFIC, 250 - 3800 MHz
Output IP3 & Output Power vs.
LO Power Over [email protected] 2100 MHz
20
-3
15
-4
15
-4
10
-5
10
-5
5
-6
0
-7
-8
+25 C
+85 C
-40 C
-9
-10
-6
-5
-4
-3
-2
-1
0
1
2
3
4
5
Vcc= 3.0 Volts
Vcc= 3.3 Volts
Vcc= 3.6 Volts
5
0
-7
-5
-8
-9
-10
6
-6
-5
-4
-3
-2
LO POWER (dBm)
0
1
2
3
4
5
6
Output Noise vs. LO Power
Over [email protected] 2100 MHz
-140
OUTPUT NOISE (dBm/Hz)
-140
OUTPUT NOISE (dBm/Hz)
-1
+25 C
+85 C
-40 C
-145
-150
-155
-160
Vcc= 3.0 Volts
Vcc= 3.3 Volts
Vcc= 3.6 Volts
-145
-150
-155
-160
-6
-5
-4
-3
-2
-1
0
1
2
10
LO POWER (dBm)
Output Noise vs. LO Power
Over [email protected] 2100 MHz
3
4
5
6
-6
-5
-4
-3
-2
LO POWER (dBm)
-1
0
1
2
3
4
5
6
LO POWER (dBm)
Sideband Suppression*
vs. LO [email protected] 2100 MHz
Carrier Suppression*
vs. LO [email protected] 2100 MHz
-20
CARRIER SUPPRESSION (dBc)
-20
SIDEBAND SUPPRESSION (dBc)
-6
MODULATORS - SMT
-5
OUTPUT IP3 (dBm)
-3
OUTPUT POWER (dBm)
20
OUTPUT POWER (dBm)
OUTPUT IP3 (dBm)
Output IP3 & Output Power vs.
LO Power Over [email protected] 2100 MHz
-30
-40
UNCALIBRATED, +25C
CALIBRATED, +25C
UNCALIBRATED, OVER TEMP
CALIBRATED, OVER TEMP
-50
-60
UNCALIBRATED, +25C
CALIBRATED, +25C
UNCALIBRATED, OVER TEMP
CALIBRATED, OVER TEMP
-30
-40
-50
-60
-6
-5
-4
-3
-2
-1
0
1
2
LO POWER (dBm)
3
4
5
6
-6
-5
-4
-3
-2
-1
0
1
2
LO POWER (dBm)
3
4
5
6
* See note titled “Calibrated vs. Uncalibrated test results” herein.
For price, delivery, and to place orders, please contact Hittite Microwave Corporation:
20 Alpha Road, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373
Order On-line at www.hittite.com
10 - 15
HMC495LP3 / 495LP3E
v02.0705
SiGe WIDEBAND DIRECT
MODULATOR RFIC, 250 - 3800 MHz
10
PCS CDMA @ 1960 MHz
ACPR @ 885 kHz, Vcc= 3.3V, Vdc= 1.15V
-20
-20
-30
-30
-40
-40
POWER (dBm)
POWER (dBm)
Cellular CDMA @ 880 MHz
ACPR @ 885 kHz, Vcc= 3.3V, Vdc= 1.15V
-50
-60
CP = -15dBm
ACPR = -72.3dBc
-70
CP = -15dBm
ACPR = -72dBc
-50
-60
-70
-80
-80
-90
-90
-100
879
CP = -18.42dBm
ACPR = -71.5dBc
-100
879.3
879.5
879.8
880
880.3
880.5
880.8
881
1959
1959.25 1959.5 1959.75
1960.25 1960.5 1960.75
1961
W-CDMA @ 2140 MHz
ACPR @ 3.84 MHz, Vcc= 3.3V, Vdc= 1.15V
-20
-20
-30
CP = -17.3dBm
ACPR = -59.7dBc
CP = -17.3dBm
ACPR = -59.8dBc
-40
POWER (dBm)
-40
1960
FREQUENCY (MHz)
W-CDMA @ 1960 MHz
ACPR @ 3.84 MHz, Vcc= 3.3V, Vdc= 1.15V
POWER (dBm)
MODULATORS - SMT
FREQUENCY (MHz)
-30
CP = -18.42dBm
ACPR = -71.5dBc
-50
-60
-70
-60
-70
-80
-90
-90
FREQUENCY (MHz)
CP = -14.4dBm
ACPR = -59.8dBc
-50
-80
-100
1955 1956 1957 1958 1959 1960 1961 1962 1963 1964 1965
CP = -14.4Bm
ACPR = -59.2dBc
-100
2135 2136 2137 2138 2139 2140 2141 2142 2143 2144 2145
FREQUENCY (MHz)
Note 1: W-CDMA (Modulation Set-up for ACPR Mode); The Baseband I and Q input signals were generated using “Test Model 1
with 64 channels” settings in the Agilent E3844C.
Note 2: CDMA (Modulation Set-up for ACPR Mode); The Baseband I and Q input signals were generated using the “9 channels
forward” settings in the Agilent E3844C (pilot, paging, sync and 6 traffic channels).
10 - 16
For price, delivery, and to place orders, please contact Hittite Microwave Corporation:
20 Alpha Road, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373
Order On-line at www.hittite.com
HMC495LP3 / 495LP3E
v02.0705
SiGe WIDEBAND DIRECT
MODULATOR RFIC, 250 - 3800 MHz
Absolute Maximum Ratings
Vcc1, Vcc2, VB1, VB2
-0.5 to +6V
LO Input Power
+10 dBm Max.
Baseband Input Voltage
(Reference to GND)
-0.5 to +1.8V
Channel Temperature
150 °C
Continuous Pdiss (T = 85°C)
(Derate 43.5 mW/°C above 85°C)
2.83 Watts
Thermal Resistance (Rth)
(junction to lead)
23 °C/Watt
Storage Temperature
-40 to +150 °C
Operating Temperature
-40 to +85 °C
ELECTROSTATIC SENSITIVE DEVICE
OBSERVE HANDLING PRECAUTIONS
10
MODULATORS - SMT
Outline Drawing
NOTES:
1. LEADFRAME MATERIAL: COPPER ALLOY
2. DIMENSIONS ARE IN INCHES [MILLIMETERS].
3. LEAD SPACING TOLERANCE IS NON-CUMULATIVE
4. PAD BURR LENGTH SHALL BE 0.15mm MAXIMUM.
PAD BURR HEIGHT SHALL BE 0.05mm MAXIMUM.
5. PACKAGE WARP SHALL NOT EXCEED 0.05mm.
6. ALL GROUND LEADS AND GROUND PADDLE MUST
BE SOLDERED TO PCB RF GROUND.
7. REFER TO HITTITE APPLICATION NOTE FOR SUGGESTED
PCB LAND PATTERN.
Package Information
Part Number
Package Body Material
Lead Finish
MSL Rating
HMC495LP3
Low Stress Injection Molded Plastic
Sn/Pb Solder
MSL1
HMC495LP3E
RoHS-compliant Low Stress Injection Molded Plastic
100% matte Sn
MSL1
Package Marking [3]
[1]
495
XXXX
[2]
495
XXXX
[1] Max peak reflow temperature of 235 °C
[2] Max peak reflow temperature of 260 °C
[3] 4-Digit lot number XXXX
For price, delivery, and to place orders, please contact Hittite Microwave Corporation:
20 Alpha Road, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373
Order On-line at www.hittite.com
10 - 17
HMC495LP3 / 495LP3E
v02.0705
SiGe WIDEBAND DIRECT
MODULATOR RFIC, 250 - 3800 MHz
Pin Descriptions
Pin Number
Function
Description
1, 4, 9, 12
GND
These pins and the ground paddle must be connected to a
high quality RF/DC ground.
LOP, LON
Differential LO input ports. This device may be driven in
either differential or single ended mode. In single ended
mode, one port should be driven by the LO source while
the other port may be terminated with a 50Ω resistor to
ground. An external shunt 68Ω resistor is used to improve
VSWR, while an external 100 pF capacitor is required
to prevent DC supply voltage from appearing on the
customer’s PC board.
VB2
Bias Voltage for the LO stage. This voltage will affect the
Sideband Suppression, the Output Noise Floor and the
Power Consumption. The ideal voltage range for this port
is between +2.7 Vdc and +3.0 Vdc. The nominal current for
this port is 5.3 mA.
6, 7
Qn, Qp
Differential Quadrature baseband input. These are
high impedance ports. The nominal recommended bias
voltage is between 1.0 - 1.15V. The nominal recommended
baseband input voltage is 800 mV peak to peak differential.
By adjusting the DC bias voltage on ports Qn & Qp, the
Carrier Suppression of the device can be optimized for a
specific frequency band and LO power level. The typical
offset voltage for optimization is less than 5 mV.
The amplitude and phase difference between the I and Q
inputs can be adjusted in order to optimize the Sideband
Suppression for a specific frequency band
and LO power level.
8
VB1
Bias Voltage for the output stage. This voltage should be
connected to the Vcc supply. Nominal supply voltage is 3.3
Vdc. The nominal current for this port is 2.4 mA.
10
N/C
No connect.
RFP
RF Output port. This port is matched to 50Ω. A series
capacitor should be connected to this port in order to
prevent the DC supply voltage from appearing on the
customer’s PC board.
2, 3
MODULATORS - SMT
10
5
11
10 - 18
Interface Schematic
For price, delivery, and to place orders, please contact Hittite Microwave Corporation:
20 Alpha Road, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373
Order On-line at www.hittite.com
HMC495LP3 / 495LP3E
v02.0705
SiGe WIDEBAND DIRECT
MODULATOR RFIC, 250 - 3800 MHz
Pin Descriptions (continued)
Function
Description
13
Vcc1
Supply voltage for the mixer and output stages.
Set to 3.3V for nominal operation. The nominal
current for this port is 37 mA.
14, 15
Ip, In
Differential In-Phase baseband input. These are high
impedance ports. The nominal recommended bias voltage
is between 1.0 - 1.15V.The nominal recommened baseband
input voltage is 800 mV peak to peak differential. By
adjusting the DC bias voltage on ports In & Ip, the Carrier
Suppression of the device can be optimized for a specific
frequency band and LO power level. The typical offset
voltage for optimization is less than 5 mV.
The amplitude and phase difference between the I and Q
inputs can be adjusted in order to optimize the Sideband
Suppression for a specific frequency band
and LO power level.
16
Vcc2
Supply voltage for the LO stage. Set to 3.3V for nominal
operation. The nominal current for this port is 64 mA.
Interface Schematic
For price, delivery, and to place orders, please contact Hittite Microwave Corporation:
20 Alpha Road, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373
Order On-line at www.hittite.com
10
MODULATORS - SMT
Pin Number
10 - 19
HMC495LP3 / 495LP3E
v02.0705
SiGe WIDEBAND DIRECT
MODULATOR RFIC, 250 - 3800 MHz
Evaluation PCB
MODULATORS - SMT
10
List of Materials for Evaluation PCB 107413 [1]
Item
Description
J1 - J8
PCB Mount SMA Connector
J9 - J12
DC Molex Connector
C1, C2, C7
100 pF Chip Capacitor, 0402 Pkg.
C3, C6, C8, C11
1000 pF Chip Capacitor, 0402 Pkg.
C4, C5, C9, C10
10 pF Chip Capacitor, 0402 Pkg.
C12 - C15
4.7 uF, Case A, Tantulum
R1, R2
68 Ohms, 0402 Pkg.
R3
62 Ohms, 0402 Pkg.
U1
HMC495LP3 / HMC495LP3E Modulator
PCB [2]
107309 Eval Board
The circuit board used in the final application should
use RF circuit design techniques. Signal lines
should have 50 ohm impedance while the package
ground leads and exposed paddle should be connected directly to the ground plane similar to that
shown. A sufficient number of via holes should be
used to connect the top and bottom ground planes.
The evaluation circuit board shown is available from
Hittite upon request.
[1] Reference this number when ordering complete evaulation PCB
[2] Circuit Board Material: Rogers 4350
10 - 20
For price, delivery, and to place orders, please contact Hittite Microwave Corporation:
20 Alpha Road, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373
Order On-line at www.hittite.com
HMC495LP3 / 495LP3E
v02.0705
SiGe WIDEBAND DIRECT
MODULATOR RFIC, 250 - 3800 MHz
Application & Evaluation PCB Schematic
Note:
Baseband input frequency range is dependent on value of C4, C5, C9 and C10. The value of 10 pF was chosen to give a typical
response of DC - 250 MHz. Input frequency range can be extended up to 1 GHz with possible degradation of LO leakage and
broadband noise floor response by decreasing the value of C4, C5, C9 & C10.
MODULATORS - SMT
10
Characterization Set-up
For price, delivery, and to place orders, please contact Hittite Microwave Corporation:
20 Alpha Road, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373
Order On-line at www.hittite.com
10 - 21