HMC495LP3 / 495LP3E v02.0705 MODULATORS - SMT 10 SiGe WIDEBAND DIRECT MODULATOR RFIC, 250 - 3800 MHz Typical Applications Features The HMC495LP3 / HMC495LP3E is suitable for various modulation systems: Wideband RF Frequency Range • UMTS, GSM or CDMA Basestations Very Low Noise Floor: -158 dBm/Hz • Fixed Wireless or WLL Low LO Power: -6 to +6 dBm • ISM Transceivers, 900 & 2400 MHz Differential or Single Ended LO Input • GMSK, QPSK, QAM, SSB Modulators Single Low Current Supply: +3.3V@ 108 mA Functional Diagram General Description High Carrier Suppression: 38 dBc The HMC495LP3 & HMC495LP3E are low noise Wideband Direct Quadrature Modulator RFICs which are ideal for digital modulation applications from 250 3800 MHz including; Cellular/3G, Broadband Wireless Access & ISM circuits. Housed in a compact 3x3 mm (LP3) SMT QFN package, the RFIC requires minimal external components & provides a low cost alternative to more complicated double upconversion architectures. The RF output port is single-ended and matched to 50 Ohms with no external components. The LO requires -6 to +6 dBm and can be driven in either differential or single-ended mode while the Baseband inputs will support modulation inputs from DC - 250 MHz typical. This device is optimized for a supply voltage of +3.3V @ 108 mA and will provide stable performance over a +3V to +3.6V range. Electrical Specifi cations, See Test Conditions on following page herein. Parameter Min. Frequency Range, RF Output Power -5 2 Output IP3 Max. Min. 450 - 960 -7 Output P1dB Typ. Typ. Max. Min. 1800 - 2200 -8 -6 1 Typ. Max. Min. 2100 - 2700 -9 -7 0 -11 Typ. Max. Units 3400 - 3800 MHz -9 dBm -2 dBm 17 14 14 13 dBm -159 -158 -158 -157 dBm/Hz Carrier Suppression (uncalibrated) 38 38 35 34 dBc Sideband Suppression (uncalibrated) 34 31 30 28 dBc IM3 Suppression 59 50 50 56 dBc RF Port Return Loss 18 17 16 13 dB LO Port Return Loss 13 8 7 5 dB Output Noise Floor CDMA IS95 ACPR@ 880 MHz & 1960 MHz -72 -71.5 N/A N/A dBc Channel Power -15 -18.4 N/A N/A dBm W-CDMA 3GPP 10 - 10 ACPR@ 1960 & 2140 MHz N/A -60 -59 N/A dBc Channel Power N/A -17.3 -14.4 N/A dBm For price, delivery, and to place orders, please contact Hittite Microwave Corporation: 20 Alpha Road, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373 Order On-line at www.hittite.com HMC495LP3 / 495LP3E v02.0705 SiGe WIDEBAND DIRECT MODULATOR RFIC, 250 - 3800 MHz Electrical Specifi cations, (continued) Parameter Conditions Min. Typ. Max. Units 3.8 GHz RF Output RF Frequency Range 0.25 RF Return Loss 16 dB LO Input 0.25 LO Input Power With 68 Ohm shunt resistor on LO port. LO Port Return Loss With 68 Ohm shunt resistor on LO port. -6 0 3.8 GHz +6 dBm 7 dB Baseband Input Port Baseband Port Bandwidth With 50Ω source & external 10 pF shunt cap to ground. Refer to HMC495LP3 Application Circuit. DC Baseband Input DC Voltage (Vbbdc) This parameter can be varied in order to optimize the device performance over temperature and/or supply. 1.0 Baseband Input DC Bias Current (Ibbdc) Single-ended Baseband Input Capacitance DC Power Requirements 1.15 250 MHz 1.2 V Single-ended. 40 μA De-embed to the lead of the device. 0.5 pF See Test Conditions Below Supply Voltage (Vcc1, Vcc2, Vb1, Vb2) 3 Supply Current (Icc1, Icc2, Ib1, Ib2) 3.3 3.6 108 V mA Test Conditions: Unless Otherwise Specifi ed, the Following Test Conditions Were Used Parameter Condition Temperature +25 °C Baseband Input Frequency 200 kHz Baseband Input DC Voltage (Vbbdc) 1.15V Baseband Input AC Voltage (Peak to Peak Differential, I and Q) 800 mV Baseband Input AC Voltage for OIP3 Measurement (Peak to Peak Differential, I and Q) 400 mV per tone @ 150 & 250 kHz Frequency Offset for Output Noise Measurements Supply & Bias Voltage (Vb1, Vb2, Vcc1, Vcc2) 20 MHz 3.3V LO Input Power 0 dBm LO Input Mode Single-Ended Mounting Configuration Sideband & Carrier Feedthrough 10 MODULATORS - SMT LO Frequency Range Refer to HMC495LP3 Application Schematic Herein Uncalibrated Calibrated vs. Uncalibrated Test Results During the Uncalibrated Sideband and Carrier Suppression tests, care is taken to ensure that the I/Q signal paths from the Vector Signal Generator (VSG) to the Device Under Test (DUT) are equal. The “Uncalibrated, +25 °C” Sideband and Carrier Suppression plots were measured at room temperature, while the “Uncalibrated, over Temperature” Sideband and Carrier Suppression plots represent the worst case uncalibrated suppression levels measured at T= -40 °C, +25 °C, and +85 °C. The “Calibrated, + 25 °C” Sideband Suppression data was plotted after a manual adjustment of the I/Q amplitude balance and I/Q phase offset (skew) at +25 °C, and at each LO input power level. The +25 °C adjustment settings were held constant during tests over temperature. The “Calibrated, over Temperature” plots represent the worst case calibrated Sideband Suppression levels at T= -40 °C, +25 °C, and +85 °C. The “Calibrated, +25 °C” Carrier Suppression data was plotted after a manual adjustment of the Ip/In & Qp/Qn DC offsets at +25 °C, and at each LO input power level. The +25 °C adjustment settings were held constant during tests over temperature. The “Calibrated, over Temperature” plots represent the worst case Carrier Suppression levels measured at T= -40 °C, +25 °C, and +85 °C. For price, delivery, and to place orders, please contact Hittite Microwave Corporation: 20 Alpha Road, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373 Order On-line at www.hittite.com 10 - 11 HMC495LP3 / 495LP3E v02.0705 SiGe WIDEBAND DIRECT MODULATOR RFIC, 250 - 3800 MHz Output Noise Floor and P1dB vs. Frequency -5 -10 -15 -15 -20 -20 -25 -25 SIDEBAND SUPPRESSION -30 -30 -35 -35 CARRIER SUPPRESSION -40 -40 -45 -45 -50 -50 -55 3rd HARMONIC -60 0 400 -55 OUTPUT NOISE (dBm/Hz) -5 OUTPUT POWER -10 5 -130 0 -140 -5 -150 -10 -160 -15 SET-UP NOISE FLOOR -170 0 -60 800 1200 1600 2000 2400 2800 3200 3600 4000 400 -20 800 1200 1600 2000 2400 2800 3200 3600 4000 FREQUENCY (MHz) FREQUENCY (MHz) Return Loss 0 20 18 LO (Single-ended) RF -5 RETURN LOSS (dB) 16 14 12 10 8 6 -10 -15 -20 4 2 -25 0 0 400 800 1200 1600 2000 2400 2800 3200 3600 4000 FREQUENCY (MHz) 10 - 12 -120 0 Output IP3 vs. Frequency OUTPUT IP3 (dBm) MODULATORS - SMT 0 0 400 800 1200 1600 2000 2400 2800 3200 3600 4000 FREQUENCY (MHz) For price, delivery, and to place orders, please contact Hittite Microwave Corporation: 20 Alpha Road, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373 Order On-line at www.hittite.com OUTPUT P1dB (dBm) 10 OUTPUT POWER (dBm), CARRIER SUPPR. (dBc) SIDEBAND SUPPR. (dBc), 3rd HARMONIC (dBc) Wideband Performance vs. Frequency HMC495LP3 / 495LP3E v02.0705 SiGe WIDEBAND DIRECT MODULATOR RFIC, 250 - 3800 MHz Output IP3 & Output Power vs. LO Power Over Supply@ 830 MHz 20 -3 15 -4 15 -4 10 -5 10 -5 5 -6 5 -6 +25 C +85 C -40 C -7 -8 -5 -6 -5 -4 -3 -2 -1 0 1 2 3 4 5 -8 -9 -10 6 -6 -5 -4 -3 -2 LO POWER (dBm) 1 2 3 4 5 6 3 4 5 6 5 6 -140 OUTPUT NOISE (dBm/Hz) OUTPUT NOISE (dBm/Hz) 0 Output Noise vs. LO Power Over Supply@ 830 MHz -140 +25 C +85 C -40 C -145 Vcc= 3.0 Volts Vcc= 3.3 Volts Vcc= 3.6 Volts -145 -150 -150 -155 -155 -160 -5 -4 -3 -2 -1 0 1 2 3 4 5 6 -6 -5 -4 -3 -2 LO POWER (dBm) 10 -1 0 1 2 LO POWER (dBm) Sideband Suppression* vs. LO Power@ 830 MHz Carrier Suppression* vs. LO Power@ 830 MHz -20 CARRIER SUPPRESSION (dBc) -20 SIDEBAND SUPPRESSION (dBc) -1 LO POWER (dBm) Output Noise vs. LO Power Over Temperature@ 830 MHz -160 -6 -7 -5 -9 -10 Vcc= 3.0 Volts Vcc= 3.3 Volts Vcc= 3.6 Volts 0 MODULATORS - SMT 0 OUTPUT IP3 (dBm) -3 OUTPUT POWER (dBm) 20 OUTPUT POWER (dBm) OUTPUT IP3 (dBm) Output IP3 & Output Power vs. LO Power Over Temperature@ 830 MHz -30 -40 UNCALIBRATED, +25C CALIBRATED, +25C UNCALIBRATED, OVER TEMP CALIBRATED, OVER TEMP -50 -60 UNCALIBRATED, +25C CALIBRATED, +25C UNCALIBRATED, OVER TEMP CALIBRATED, OVER TEMP -30 -40 -50 -60 -6 -5 -4 -3 -2 -1 0 1 2 LO POWER (dBm) 3 4 5 6 -6 -5 -4 -3 -2 -1 0 1 2 LO POWER (dBm) 3 4 * See note titled “Calibrated vs. Uncalibrated test results” herein. For price, delivery, and to place orders, please contact Hittite Microwave Corporation: 20 Alpha Road, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373 Order On-line at www.hittite.com 10 - 13 HMC495LP3 / 495LP3E v02.0705 SiGe WIDEBAND DIRECT MODULATOR RFIC, 250 - 3800 MHz -3 20 -3 15 -4 15 -4 10 -5 10 -5 +25 C +85 C -40 C 5 -6 0 -7 -5 -8 OUTPUT IP3 (dBm) 20 -9 -10 -6 -5 -4 -3 -2 -1 0 1 2 3 4 5 Vcc= 3.0 Volts Vcc= 3.3 Volts Vcc= 3.6 Volts 5 0 -7 -5 -8 -9 -10 6 -6 -5 -4 -3 -2 0 1 2 3 4 5 6 3 4 5 6 Output Noise vs. LO Power Over Supply@ 1900 MHz -140 OUTPUT NOISE (dBm/Hz) -140 +25 C +85 C -40 C -145 Vcc= 3.0 Volts Vcc= 3.3 Volts Vcc= 3.6 Volts -145 -150 -150 -155 -155 -160 -5 -4 -3 -2 -1 0 1 2 3 4 5 -6 6 -5 -4 -3 -2 -1 0 1 2 LO POWER (dBm) LO POWER (dBm) Sideband Suppression* vs. LO Power@ 1900 MHz Carrier Suppression* vs. LO Power@ 1900 MHz -20 CARRIER SUPPRESSION (dBc) -20 SIDEBAND SUPPRESSION (dBc) -1 LO POWER (dBm) Output Noise vs. LO Power Over Temperature@ 1900 MHz OUTPUT NOISE (dBm/Hz) MODULATORS - SMT LO POWER (dBm) -160 -6 -6 -30 -40 UNCALIBRATED, +25 C CALIBRATED, +25 C UNCALIBRATED, OVER TEMP CALIBRATED, OVER TEMP -50 -60 UNCALIBRATED, +25 C CALIBRATED, +25 C UNCALIBRATED, OVER TEMP CALIBRATED, OVER TEMP -30 -40 -50 -60 -6 -5 -4 -3 -2 -1 0 1 2 LO POWER (dBm) 3 4 5 6 -6 -5 -4 -3 -2 -1 0 1 2 LO POWER (dBm) 3 * See note titled “Calibrated vs. Uncalibrated test results” herein. 10 - 14 For price, delivery, and to place orders, please contact Hittite Microwave Corporation: 20 Alpha Road, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373 Order On-line at www.hittite.com 4 5 6 OUTPUT POWER (dBm) 10 Output IP3 & Output Power vs. LO Power Over Supply@ 1900 MHz OUTPUT POWER (dBm) OUTPUT IP3 (dBm) Output IP3 & Output Power vs. LO Power Over Temperature@ 1900 MHz HMC495LP3 / 495LP3E v02.0705 SiGe WIDEBAND DIRECT MODULATOR RFIC, 250 - 3800 MHz Output IP3 & Output Power vs. LO Power Over Supply@ 2100 MHz 20 -3 15 -4 15 -4 10 -5 10 -5 5 -6 0 -7 -8 +25 C +85 C -40 C -9 -10 -6 -5 -4 -3 -2 -1 0 1 2 3 4 5 Vcc= 3.0 Volts Vcc= 3.3 Volts Vcc= 3.6 Volts 5 0 -7 -5 -8 -9 -10 6 -6 -5 -4 -3 -2 LO POWER (dBm) 0 1 2 3 4 5 6 Output Noise vs. LO Power Over Supply@ 2100 MHz -140 OUTPUT NOISE (dBm/Hz) -140 OUTPUT NOISE (dBm/Hz) -1 +25 C +85 C -40 C -145 -150 -155 -160 Vcc= 3.0 Volts Vcc= 3.3 Volts Vcc= 3.6 Volts -145 -150 -155 -160 -6 -5 -4 -3 -2 -1 0 1 2 10 LO POWER (dBm) Output Noise vs. LO Power Over Temperature@ 2100 MHz 3 4 5 6 -6 -5 -4 -3 -2 LO POWER (dBm) -1 0 1 2 3 4 5 6 LO POWER (dBm) Sideband Suppression* vs. LO Power@ 2100 MHz Carrier Suppression* vs. LO Power@ 2100 MHz -20 CARRIER SUPPRESSION (dBc) -20 SIDEBAND SUPPRESSION (dBc) -6 MODULATORS - SMT -5 OUTPUT IP3 (dBm) -3 OUTPUT POWER (dBm) 20 OUTPUT POWER (dBm) OUTPUT IP3 (dBm) Output IP3 & Output Power vs. LO Power Over Temperature@ 2100 MHz -30 -40 UNCALIBRATED, +25C CALIBRATED, +25C UNCALIBRATED, OVER TEMP CALIBRATED, OVER TEMP -50 -60 UNCALIBRATED, +25C CALIBRATED, +25C UNCALIBRATED, OVER TEMP CALIBRATED, OVER TEMP -30 -40 -50 -60 -6 -5 -4 -3 -2 -1 0 1 2 LO POWER (dBm) 3 4 5 6 -6 -5 -4 -3 -2 -1 0 1 2 LO POWER (dBm) 3 4 5 6 * See note titled “Calibrated vs. Uncalibrated test results” herein. For price, delivery, and to place orders, please contact Hittite Microwave Corporation: 20 Alpha Road, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373 Order On-line at www.hittite.com 10 - 15 HMC495LP3 / 495LP3E v02.0705 SiGe WIDEBAND DIRECT MODULATOR RFIC, 250 - 3800 MHz 10 PCS CDMA @ 1960 MHz ACPR @ 885 kHz, Vcc= 3.3V, Vdc= 1.15V -20 -20 -30 -30 -40 -40 POWER (dBm) POWER (dBm) Cellular CDMA @ 880 MHz ACPR @ 885 kHz, Vcc= 3.3V, Vdc= 1.15V -50 -60 CP = -15dBm ACPR = -72.3dBc -70 CP = -15dBm ACPR = -72dBc -50 -60 -70 -80 -80 -90 -90 -100 879 CP = -18.42dBm ACPR = -71.5dBc -100 879.3 879.5 879.8 880 880.3 880.5 880.8 881 1959 1959.25 1959.5 1959.75 1960.25 1960.5 1960.75 1961 W-CDMA @ 2140 MHz ACPR @ 3.84 MHz, Vcc= 3.3V, Vdc= 1.15V -20 -20 -30 CP = -17.3dBm ACPR = -59.7dBc CP = -17.3dBm ACPR = -59.8dBc -40 POWER (dBm) -40 1960 FREQUENCY (MHz) W-CDMA @ 1960 MHz ACPR @ 3.84 MHz, Vcc= 3.3V, Vdc= 1.15V POWER (dBm) MODULATORS - SMT FREQUENCY (MHz) -30 CP = -18.42dBm ACPR = -71.5dBc -50 -60 -70 -60 -70 -80 -90 -90 FREQUENCY (MHz) CP = -14.4dBm ACPR = -59.8dBc -50 -80 -100 1955 1956 1957 1958 1959 1960 1961 1962 1963 1964 1965 CP = -14.4Bm ACPR = -59.2dBc -100 2135 2136 2137 2138 2139 2140 2141 2142 2143 2144 2145 FREQUENCY (MHz) Note 1: W-CDMA (Modulation Set-up for ACPR Mode); The Baseband I and Q input signals were generated using “Test Model 1 with 64 channels” settings in the Agilent E3844C. Note 2: CDMA (Modulation Set-up for ACPR Mode); The Baseband I and Q input signals were generated using the “9 channels forward” settings in the Agilent E3844C (pilot, paging, sync and 6 traffic channels). 10 - 16 For price, delivery, and to place orders, please contact Hittite Microwave Corporation: 20 Alpha Road, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373 Order On-line at www.hittite.com HMC495LP3 / 495LP3E v02.0705 SiGe WIDEBAND DIRECT MODULATOR RFIC, 250 - 3800 MHz Absolute Maximum Ratings Vcc1, Vcc2, VB1, VB2 -0.5 to +6V LO Input Power +10 dBm Max. Baseband Input Voltage (Reference to GND) -0.5 to +1.8V Channel Temperature 150 °C Continuous Pdiss (T = 85°C) (Derate 43.5 mW/°C above 85°C) 2.83 Watts Thermal Resistance (Rth) (junction to lead) 23 °C/Watt Storage Temperature -40 to +150 °C Operating Temperature -40 to +85 °C ELECTROSTATIC SENSITIVE DEVICE OBSERVE HANDLING PRECAUTIONS 10 MODULATORS - SMT Outline Drawing NOTES: 1. LEADFRAME MATERIAL: COPPER ALLOY 2. DIMENSIONS ARE IN INCHES [MILLIMETERS]. 3. LEAD SPACING TOLERANCE IS NON-CUMULATIVE 4. PAD BURR LENGTH SHALL BE 0.15mm MAXIMUM. PAD BURR HEIGHT SHALL BE 0.05mm MAXIMUM. 5. PACKAGE WARP SHALL NOT EXCEED 0.05mm. 6. ALL GROUND LEADS AND GROUND PADDLE MUST BE SOLDERED TO PCB RF GROUND. 7. REFER TO HITTITE APPLICATION NOTE FOR SUGGESTED PCB LAND PATTERN. Package Information Part Number Package Body Material Lead Finish MSL Rating HMC495LP3 Low Stress Injection Molded Plastic Sn/Pb Solder MSL1 HMC495LP3E RoHS-compliant Low Stress Injection Molded Plastic 100% matte Sn MSL1 Package Marking [3] [1] 495 XXXX [2] 495 XXXX [1] Max peak reflow temperature of 235 °C [2] Max peak reflow temperature of 260 °C [3] 4-Digit lot number XXXX For price, delivery, and to place orders, please contact Hittite Microwave Corporation: 20 Alpha Road, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373 Order On-line at www.hittite.com 10 - 17 HMC495LP3 / 495LP3E v02.0705 SiGe WIDEBAND DIRECT MODULATOR RFIC, 250 - 3800 MHz Pin Descriptions Pin Number Function Description 1, 4, 9, 12 GND These pins and the ground paddle must be connected to a high quality RF/DC ground. LOP, LON Differential LO input ports. This device may be driven in either differential or single ended mode. In single ended mode, one port should be driven by the LO source while the other port may be terminated with a 50Ω resistor to ground. An external shunt 68Ω resistor is used to improve VSWR, while an external 100 pF capacitor is required to prevent DC supply voltage from appearing on the customer’s PC board. VB2 Bias Voltage for the LO stage. This voltage will affect the Sideband Suppression, the Output Noise Floor and the Power Consumption. The ideal voltage range for this port is between +2.7 Vdc and +3.0 Vdc. The nominal current for this port is 5.3 mA. 6, 7 Qn, Qp Differential Quadrature baseband input. These are high impedance ports. The nominal recommended bias voltage is between 1.0 - 1.15V. The nominal recommended baseband input voltage is 800 mV peak to peak differential. By adjusting the DC bias voltage on ports Qn & Qp, the Carrier Suppression of the device can be optimized for a specific frequency band and LO power level. The typical offset voltage for optimization is less than 5 mV. The amplitude and phase difference between the I and Q inputs can be adjusted in order to optimize the Sideband Suppression for a specific frequency band and LO power level. 8 VB1 Bias Voltage for the output stage. This voltage should be connected to the Vcc supply. Nominal supply voltage is 3.3 Vdc. The nominal current for this port is 2.4 mA. 10 N/C No connect. RFP RF Output port. This port is matched to 50Ω. A series capacitor should be connected to this port in order to prevent the DC supply voltage from appearing on the customer’s PC board. 2, 3 MODULATORS - SMT 10 5 11 10 - 18 Interface Schematic For price, delivery, and to place orders, please contact Hittite Microwave Corporation: 20 Alpha Road, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373 Order On-line at www.hittite.com HMC495LP3 / 495LP3E v02.0705 SiGe WIDEBAND DIRECT MODULATOR RFIC, 250 - 3800 MHz Pin Descriptions (continued) Function Description 13 Vcc1 Supply voltage for the mixer and output stages. Set to 3.3V for nominal operation. The nominal current for this port is 37 mA. 14, 15 Ip, In Differential In-Phase baseband input. These are high impedance ports. The nominal recommended bias voltage is between 1.0 - 1.15V.The nominal recommened baseband input voltage is 800 mV peak to peak differential. By adjusting the DC bias voltage on ports In & Ip, the Carrier Suppression of the device can be optimized for a specific frequency band and LO power level. The typical offset voltage for optimization is less than 5 mV. The amplitude and phase difference between the I and Q inputs can be adjusted in order to optimize the Sideband Suppression for a specific frequency band and LO power level. 16 Vcc2 Supply voltage for the LO stage. Set to 3.3V for nominal operation. The nominal current for this port is 64 mA. Interface Schematic For price, delivery, and to place orders, please contact Hittite Microwave Corporation: 20 Alpha Road, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373 Order On-line at www.hittite.com 10 MODULATORS - SMT Pin Number 10 - 19 HMC495LP3 / 495LP3E v02.0705 SiGe WIDEBAND DIRECT MODULATOR RFIC, 250 - 3800 MHz Evaluation PCB MODULATORS - SMT 10 List of Materials for Evaluation PCB 107413 [1] Item Description J1 - J8 PCB Mount SMA Connector J9 - J12 DC Molex Connector C1, C2, C7 100 pF Chip Capacitor, 0402 Pkg. C3, C6, C8, C11 1000 pF Chip Capacitor, 0402 Pkg. C4, C5, C9, C10 10 pF Chip Capacitor, 0402 Pkg. C12 - C15 4.7 uF, Case A, Tantulum R1, R2 68 Ohms, 0402 Pkg. R3 62 Ohms, 0402 Pkg. U1 HMC495LP3 / HMC495LP3E Modulator PCB [2] 107309 Eval Board The circuit board used in the final application should use RF circuit design techniques. Signal lines should have 50 ohm impedance while the package ground leads and exposed paddle should be connected directly to the ground plane similar to that shown. A sufficient number of via holes should be used to connect the top and bottom ground planes. The evaluation circuit board shown is available from Hittite upon request. [1] Reference this number when ordering complete evaulation PCB [2] Circuit Board Material: Rogers 4350 10 - 20 For price, delivery, and to place orders, please contact Hittite Microwave Corporation: 20 Alpha Road, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373 Order On-line at www.hittite.com HMC495LP3 / 495LP3E v02.0705 SiGe WIDEBAND DIRECT MODULATOR RFIC, 250 - 3800 MHz Application & Evaluation PCB Schematic Note: Baseband input frequency range is dependent on value of C4, C5, C9 and C10. The value of 10 pF was chosen to give a typical response of DC - 250 MHz. Input frequency range can be extended up to 1 GHz with possible degradation of LO leakage and broadband noise floor response by decreasing the value of C4, C5, C9 & C10. MODULATORS - SMT 10 Characterization Set-up For price, delivery, and to place orders, please contact Hittite Microwave Corporation: 20 Alpha Road, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373 Order On-line at www.hittite.com 10 - 21