HITTITE HMC606LC5

HMC606LC5
v00.0407
GaAs InGaP HBT MMIC ULTRA LOW
PHASE NOISE, DISTRIBUTED AMPLIFIER, 2 - 18 GHz
AMPLIFIERS - SMT
5
Typical Applications
Features
The HMC606LC5 is ideal for:
Ultra Low Phase Noise: -160 dBc/Hz @ 10 kHz
• Radar, EW & ECM
P1dB Output Power: +15 dBm
• Microwave Radio
Gain: 13.5 dB
• Test Instrumentation
Output IP3: +27 dBm
• Military & Space
Supply Voltage: +5V @ 64 mA
• Fiber Optic Systems
50 Ohm Matched Input/Output
25mm2 Leadless SMT Package
Functional Diagram
General Description
The HMC606LC5 is a GaAs InGaP HBT MMIC
Distributed Amplifier housed in a leadless 5 x 5 mm
surface mount package which operates between 2 and
18 GHz. With an input signal of 12 GHz, the amplifier
provides ultra low phase noise performance of -160
dBc/Hz at 10 kHz offset, representing a significant
improvement over FET-based distributed amplifiers.
The HMC606LC5 provides 13.5 dB of small signal
gain, +27 dBm output IP3 and +15 dBm of output
power at 1 dB gain compression while requiring 64 mA
from a +5V supply. The HMC606LC5 amplifier I/Os
are internally matched to 50 Ohms and are internally
DC blocked.
Electrical Specifications, TA = +25° C, Vcc1= Vcc2= 5V
Parameter
Min.
Frequency Range
Gain
10.5
Gain Flatness
Gain Variation Over Temperature
Max.
Min.
13.5
9.5
Typ.
Max.
Units
2 - 18
GHz
12.5
dB
±1.0
±1.0
dB
0.021
0.024
dB/ °C
Noise Figure
5
7
dB
Input Return Loss
20
18
dB
Output Return Loss
Output Power for 1 dB Compression (P1dB)
15
12
15
10
15
dB
13
dBm
Saturated Output Power (Psat)
17
15
dBm
Output Third Order Intercept (IP3)
27
22
dBm
-140
-140
dBc/Hz
Phase Noise @ 100 Hz
Phase Noise @ 1 kHz
-150
-150
dBc/Hz
Phase Noise @ 10 kHz
-160
-160
dBc/Hz
Phase Noise @ 1 MHz
-170
-170
dBc/Hz
Supply Current
5 - 628
Typ.
2 - 12
64
80
64
80
For price, delivery, and to place orders, please contact Hittite Microwave Corporation:
20 Alpha Road, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373
Order On-line at www.hittite.com
mA
HMC606LC5
v00.0407
GaAs InGaP HBT MMIC ULTRA LOW
PHASE NOISE, DISTRIBUTED AMPLIFIER, 2 - 18 GHz
20
15
18
10
16
5
14
S21
S11
S22
0
-5
-10
12
10
8
-15
6
-20
4
-25
2
+25C
+85C
-40C
0
0
2
4
6
8
10
12
14
16
18
20
22
2
4
6
FREQUENCY (GHz)
Input Return Loss vs. Temperature
10
12
14
16
18
Output Return Loss vs. Temperature
0
OUTPUT RETURN LOSS (dB)
0
INPUT RETURN LOSS (dB)
8
FREQUENCY (GHz)
AMPLIFIERS - SMT
20
-30
-5
+25C
+85C
-40C
-10
-15
-20
-25
-30
+25C
+85C
-40C
-5
-10
-15
-20
-25
-30
2
4
6
8
10
12
14
16
18
2
4
6
FREQUENCY (GHz)
NOISE FIGURE (dB)
15
10
5
Output Power
Gain
PAE
0
-10
-5
0
Pin (dBm)
10
12
14
16
18
16
18
Noise Figure vs. Temperature
20
-5
-15
8
FREQUENCY (GHz)
Power Compression
Pout (dBm), Gain (dB), PAE (%)
5
Gain vs. Temperature
GAIN (dB)
RESPONSE (dB)
Gain & Return Loss
5
10
14
13
12
11
10
9
8
7
6
5
4
3
2
1
0
+25C
+85C
-40C
2
4
6
8
10
12
14
FREQUENCY (GHz)
For price, delivery, and to place orders, please contact Hittite Microwave Corporation:
20 Alpha Road, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373
Order On-line at www.hittite.com
5 - 629
HMC606LC5
v00.0407
GaAs InGaP HBT MMIC ULTRA LOW
PHASE NOISE, DISTRIBUTED AMPLIFIER, 2 - 18 GHz
P1dB vs. Temperature
Psat vs. Temperature
20
25
18
23
16
21
14
19
Psat (dBm)
P1dB (dBm)
AMPLIFIERS - SMT
5
12
10
+25C
+85C
-40C
8
17
15
13
6
11
4
9
2
7
0
+25C
+85C
-40C
5
2
4
6
8
10
12
14
16
18
2
4
6
FREQUENCY (GHz)
12
14
16
18
Phase Noise @ 12 GHz
-20
-40
-60
-80
-100
+25C
+85C
-40C
-120
-140
-160
2
4
6
8
10
12
14
16
18
-180
1
10
2
10
FREQUENCY (GHz)
4
10
5
10
5
10
10
6
Phase Noise at Psat @ 12 GHz
0
-20
PHASE NOISE (dBc/Hz)
0
-20
-40
-60
-80
-100
-120
-140
-40
-60
-80
-100
-120
-140
-160
-160
-180
1
10
3
10
FREQUENCY (Hz)
Phase Noise at P1dB @ 12 GHz
PHASE NOISE (dBc/Hz)
10
0
35
33
31
29
27
25
23
21
19
17
15
13
11
9
7
5
PHASE NOISE (dBc/Hz)
OIP3 (dBm)
Output IP3 vs. Temperature
2
10
3
10
4
10
FREQUENCY (Hz)
5 - 630
8
FREQUENCY (GHz)
5
10
6
10
-180
1
10
2
10
3
10
4
10
10
FREQUENCY (Hz)
For price, delivery, and to place orders, please contact Hittite Microwave Corporation:
20 Alpha Road, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373
Order On-line at www.hittite.com
6
HMC606LC5
v00.0407
GaAs InGaP HBT MMIC ULTRA LOW
PHASE NOISE, DISTRIBUTED AMPLIFIER, 2 - 18 GHz
Typical Supply Current vs. Vcc1, Vcc2
Vcc1= Vcc2= 5V
7V
RF Input Power (RFin)
+15 dBm
+4.5
53
Channel Temperature
175 °C
+5.0
64
Continuous Pdiss (T = 85 °C)
(derate 6 mW/°C above 85 °C)
0.55 W
+5.5
71
Thermal Resistance
(channel to ground paddle)
169.5 °C/W
Storage Temperature
-65 to +150 °C
Operating Temperature
-40 to +85 °C
Vcc, Vcc2 (V)
Icc + Icc2 (mA)
ELECTROSTATIC SENSITIVE DEVICE
OBSERVE HANDLING PRECAUTIONS
5
AMPLIFIERS - SMT
Absolute Maximum Ratings
Outline Drawing
NOTES:
1. LEADFRAME MATERIAL: COPPER ALLOY
2. DIMENSIONS ARE IN INCHES [MILLIMETERS]
3. LEAD SPACING TOLERANCE IS NON-CUMULATIVE.
4. PAD BURR LENGTH SHALL BE 0.15mm MAXIMUM.
PAD BURR HEIGHT SHALL BE 0.05mm MAXIMUM.
5. PACKAGE WARP SHALL NOT EXCEED 0.05mm.
6. ALL GROUND LEADS AND GROUND PADDLE MUST BE
SOLDERED TO PCB RF GROUND.
7. REFER TO HITTITE APPLICATION NOTE FOR SUGGESTED
LAND PATTERN.
For price, delivery, and to place orders, please contact Hittite Microwave Corporation:
20 Alpha Road, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373
Order On-line at www.hittite.com
5 - 631
HMC606LC5
v00.0407
GaAs InGaP HBT MMIC ULTRA LOW
PHASE NOISE, DISTRIBUTED AMPLIFIER, 2 - 18 GHz
AMPLIFIERS - SMT
5
5 - 632
Pin Descriptions
Pin Number
Function
Description
1, 3, 7 - 15, 17
- 19,
23 - 32
N/C
No connection. These pins may be connected to RF
ground. Performance will not be affected.
2, 16
Vcc1, Vcc2
Vcc1= Vcc2= 5V.
Power supply voltage for the amplifier.
4, 6, 20, 22,
Ground Paddle
GND
Ground paddle must be connected to RF/DC ground.
5
RFIN
This pin is AC coupled and matched
to 50 Ohms from 2 - 18 GHz.
21
RFOUT
This pin is AC coupled and matched
to 50 Ohms from 2 - 18 GHz.
Interface Schematic
For price, delivery, and to place orders, please contact Hittite Microwave Corporation:
20 Alpha Road, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373
Order On-line at www.hittite.com
HMC606LC5
v00.0407
GaAs InGaP HBT MMIC ULTRA LOW
PHASE NOISE, DISTRIBUTED AMPLIFIER, 2 - 18 GHz
5
AMPLIFIERS - SMT
Evaluation PCB
List of Materials for Evaluation PCB 117156
Item
Description
J1 - J2
SRI K Connector
J3 - J4
2mm Molex Header
C1, C2
4.7 μF Capacitor, Tantalum
C3, C4
100 pF Capacitor, 0402 Pkg.
C5, C6
1000 pF Capacitor, 0603 Pkg.
U1
HMC465LP5 / HMC465LP5E
PCB [2]
117325 Evaluation PCB
[1] Reference this number when ordering complete evaluation PCB
[2] Circuit Board Material: Rogers 4350
[1]
The circuit board used in the final application
should use RF circuit design techniques. Signal
lines should have 50 ohm impedance while the
package ground leads and package bottom should
be connected directly to the ground plane similar to
that shown. A sufficient number of via holes should
be used to connect the top and bottom ground
planes. The evaluation board should be mounted
to an appropriate heat sink. The evaluation circuit
board shown is available from Hittite upon request.
For price, delivery, and to place orders, please contact Hittite Microwave Corporation:
20 Alpha Road, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373
Order On-line at www.hittite.com
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