HMC609LC4 v02.0508 LOW NOISE AMPLIFIERS - SMT 8 GaAs PHEMT MMIC LOW NOISE AMPLIFIER, 2 - 4 GHz Typical Applications Features The HMC609LC4 is ideal for: Excellent Gain Flatness: ±0.4 dB • Fixed Microwave High Gain: 20 dB • Test & Measurement Equipment Low Noise Figure: 3.5 dB • Radar & Sensors Output IP3: +36.5 dBm • Military & Space 50 Ohm Matched & DC Blocked RF I/Os RoHS Compliant 4x4 mm SMT package Functional Diagram General Description The HMC609LC4 is a GaAs PHEMT MMIC Low Noise Amplifier (LNA) which operates from 2 to 4 GHz. The HMC609LC4 features extremely flat performance characteristics including 20 dB of small signal gain, 3.5 dB of noise figure and output IP3 of +36.5 dBm across the operating band. This 50 Ohm matched amplifier does not require any external matching components. The HMC609LC4 is compatible with high volume surface mount manufacturing techniques, and the RF I/Os are DC blocked for further ease of integration. Electrical Specifi cations, TA = +25° C, Vdd1 = Vdd2 = +6V, Idd1 + Idd2 = 170mA [1] Parameter Min. Frequency Range Gain Typ. Max. 2-4 17 Gain Variation Over Temperature Noise Figure GHz 20 dB 0.015 0.02 dB/ °C 3.5 5.5 dB Input Return Loss 17 dB Output Return Loss 15 dB 21.5 dBm 23 dBm Output Power for 1 dB Compression (P1dB) 18.5 Saturated Output Power (Psat) Output Third Order Intercept (IP3) 36.5 Supply Current (Idd1 + Idd2) 170 dBm 220 [1] Adjust Vgg between -1.5V to -0.5V (Typical -0.9V) to achieve total drain bias of 170mA 8 - 230 Units For price, delivery, and to place orders, please contact Hittite Microwave Corporation: 20 Alpha Road, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373 Order On-line at www.hittite.com mA HMC609LC4 v02.0508 GaAs PHEMT MMIC LOW NOISE AMPLIFIER, 2 - 4 GHz 25 20 20 15 15 10 S21 S11 S22 0 -5 -10 -15 10 S21 S11 S22 5 0 -5 -10 -15 -20 -20 -25 -25 -30 -30 1 2 3 4 5 6 7 8 1 9 2 3 5 22 22 21 21 20 20 19 18 +25C +85C -40C 7 8 9 3.5 3.75 4 19 18 +25C +85C -40C 17 16 16 15 15 2 2.25 2.5 2.75 3 3.25 3.5 3.75 2 4 2.25 2.5 2.75 3 3.25 FREQUENCY (GHz) FREQUENCY (GHz) Input Return Loss vs. Temperature [1] Input Return Loss vs. Temperature [2] 0 0 -5 +25C +85C -40C -10 RETURN LOSS (dB) RETURN LOSS (dB) 6 Gain vs. Temperature [2] GAIN (dB) GAIN (dB) Gain vs. Temperature [1] 17 4 FREQUENCY (GHz) FREQUENCY (GHz) LOW NOISE AMPLIFIERS - SMT 25 5 8 Broadband Gain & Return Loss [2] RESPONSE (dBm) RESPONSE (dB) Broadband Gain & Return Loss [1] -20 -30 +25C +85C -40C -10 -15 -20 -25 -30 -35 -40 -40 2 2.25 2.5 2.75 3 3.25 FREQUENCY (GHz) [1] Vdd = 6V 3.5 3.75 4 2 2.25 2.5 2.75 3 3.25 3.5 3.75 4 FREQUENCY (GHz) [2] Vdd = 5V For price, delivery, and to place orders, please contact Hittite Microwave Corporation: 20 Alpha Road, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373 Order On-line at www.hittite.com 8 - 231 HMC609LC4 v02.0508 GaAs PHEMT MMIC LOW NOISE AMPLIFIER, 2 - 4 GHz 8 Output Return Loss vs. Temperature [1] Output Return Loss vs. Temperature [2] 0 -5 +25C +85C -40C -10 RETURN LOSS (dB) RETURN LOSS (dB) -5 -15 -20 -10 -15 -20 +25C +85C -40C -25 -25 -30 -30 2 2.25 2.5 2.75 3 3.25 3.5 3.75 2 4 2.25 2.5 Psat vs. Temperature [1] 25 24 24 23 23 Psat (dBm) 26 25 22 21 20 3.75 4 3.5 3.7 4 3.5 3.7 4 +25C +85C -40C 22 21 20 17 16 16 2 2.25 2.5 2.75 3 3.25 3.5 3.75 2 4 2.2 2.5 P1dB vs. Temperature [1] 25 24 24 23 23 P1dB (dBm) 26 25 22 21 20 3.2 +25C +85C -40C 22 21 20 19 +25C +85C -40C 18 3 P1dB vs. Temperature [2] 26 19 2.7 FREQUENCY (GHz) FREQUENCY (GHz) P1dB (dBm) 3.5 18 17 18 17 17 16 16 2 2.25 2.5 2.75 3 3.25 FREQUENCY (GHz) [1] Vdd = 6V 8 - 232 3.25 19 +25C +85C -40C 18 3 Psat vs. Temperature [2] 26 19 2.75 FREQUENCY (GHz) FREQUENCY (GHz) Psat (dBm) LOW NOISE AMPLIFIERS - SMT 0 3.5 3.75 4 2 2.2 2.5 2.7 3 3.2 FREQUENCY (GHz) [2] Vdd = 5V For price, delivery, and to place orders, please contact Hittite Microwave Corporation: 20 Alpha Road, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373 Order On-line at www.hittite.com HMC609LC4 v02.0508 GaAs PHEMT MMIC LOW NOISE AMPLIFIER, 2 - 4 GHz Output IP3 vs. Temperature [1] 8 Output IP3 vs. Temperature [2] 40 39 38 38 OIP3 (dBm) IP3 (dBm) 37 36 34 36 35 34 +25C +85C -40C 33 +25C +85C -40C 32 32 31 30 30 2 2.25 2.5 2.75 3 3.25 3.5 3.75 4 2 2.25 2.5 FREQUENCY (GHz) 2.75 3 3.25 3.5 3.75 4 3.75 4 FREQUENCY (GHz) Noise Figure vs. Temperature [1] Noise Figure vs. Temperature [2] 10 10 9 +25C +85C -40C 8 NOISE FIGURE (dB) NOISE FIGURE (dB) 8 6 4 2 +25C +85C -40C 7 6 5 4 LOW NOISE AMPLIFIERS - SMT 40 3 2 1 0 0 2 2.25 2.5 2.75 3 3.25 3.5 3.75 4 2 2.25 2.5 FREQUENCY (GHz) 0 0 -10 -10 +25C +85C -40C ISOLATION (dB) ISOLATION (dB) 3 3.25 3.5 Reverse Isolation vs. Temperature [2] Reverse Isolation vs. Temperature [1] -20 2.75 FREQUENCY (GHz) -30 -40 -20 +25C +85C -40C -30 -40 -50 -50 -60 -60 2 2.25 2.5 2.75 3 3.25 FREQUENCY (GHz) [1] Vdd = 6V 3.5 3.75 4 2 2.25 2.5 2.75 3 3.25 3.5 3.75 4 FREQUENCY (GHz) [2] Vdd = 5V For price, delivery, and to place orders, please contact Hittite Microwave Corporation: 20 Alpha Road, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373 Order On-line at www.hittite.com 8 - 233 HMC609LC4 v02.0508 GaAs PHEMT MMIC LOW NOISE AMPLIFIER, 2 - 4 GHz 8 Power Compression @ 3 GHz 8 - 234 Pout (dBm), GAIN (dB), PAE (%) LOW NOISE AMPLIFIERS - SMT 25 20 15 10 Pout Gain PAE 5 0 -10 -8 -6 -4 -2 0 2 4 6 8 INPUT POWER (dBm) Absolute Maximum Ratings Typical Supply Current vs. Vdd Drain Bias Voltage (Vdd) 7 Vdc Vdd (V) Idd (mA) RF Input Power (RFIN)(Vdd = +6.0 Vdc) +15 dBm +5.5 160 Channel Temperature 175 °C +6.0 170 +6.5 180 Continuous Pdiss (T = 85 °C) (derate 16.7 mW/°C above 85 °C) 1.1 W Thermal Resistance (channel to ground paddle) 60 °C/W Storage Temperature -65 to +150 °C Operating Temperature -40 to +85 °C Note: Amplifier will operate over full voltage range shown above ELECTROSTATIC SENSITIVE DEVICE OBSERVE HANDLING PRECAUTIONS For price, delivery, and to place orders, please contact Hittite Microwave Corporation: 20 Alpha Road, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373 Order On-line at www.hittite.com HMC609LC4 v02.0508 GaAs PHEMT MMIC LOW NOISE AMPLIFIER, 2 - 4 GHz NOTES: 1. LEADFRAME MATERIAL: COPPER ALLOY LOW NOISE AMPLIFIERS - SMT 8 Outline Drawing 2. DIMENSIONS ARE IN INCHES [MILLIMETERS] 3. LEAD SPACING TOLERANCE IS NON-CUMULATIVE. 4. PAD BURR LENGTH SHALL BE 0.15mm MAXIMUM. PAD BURR HEIGHT SHALL BE 0.05mm MAXIMUM. 5. PACKAGE WARP SHALL NOT EXCEED 0.05mm. 6. ALL GROUND LEADS AND GROUND PADDLE MUST BE SOLDERED TO PCB RF GROUND. 7. REFER TO HITTITE APPLICATION NOTE FOR SUGGESTED LAND PATTERN. For price, delivery, and to place orders, please contact Hittite Microwave Corporation: 20 Alpha Road, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373 Order On-line at www.hittite.com 8 - 235 HMC609LC4 v02.0508 GaAs PHEMT MMIC LOW NOISE AMPLIFIER, 2 - 4 GHz LOW NOISE AMPLIFIERS - SMT 8 Pin Descriptions Function Description 1, 5 - 8, 10 - 14, 18 - 20, 22, 24 Pin Number N/C This pin may be connected to RF/DC ground. Performance will not be affected. 2, 4, 15, 17 GND Package bottom must also be connected to RF/DC ground 3 RFIN This pin is AC coupled and matched to 50 Ohms. 9 Vgg Gate supply voltage for the amplifier. (External bypass capacitors are required.) 16 RFOUT This pin is AC coupled and matched to 50 Ohms. 21, 23 Vdd1, Vdd2 Power Supply Voltage for the amplifier. (External bypass capacitors are required.) Interface Schematic Application Circuit 8 - 236 Component Value C1 - C3 100 pF C4 - C6 1,000 pF C7 - C9 2.2 μF For price, delivery, and to place orders, please contact Hittite Microwave Corporation: 20 Alpha Road, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373 Order On-line at www.hittite.com HMC609LC4 v02.0508 GaAs PHEMT MMIC LOW NOISE AMPLIFIER, 2 - 4 GHz 8 LOW NOISE AMPLIFIERS - SMT Evaluation PCB List of Materials for Evaluation PCB 117510 [1] Item Description J1 - J2 PCB Mount SMA Connector J3 - J7 DC Pin C1 - C3 100 pF Capacitor, 0402 Pkg. C4 - C6 1000 pF Capacitor, 0603 Pkg. C7 - C9 2.2 μF Capacitor, Tantalum U1 HMC609LC4 Amplifier PCB [2] 117515 Evaluation PCB, 10 mils [1] Reference this number when ordering complete evaluation PCB [2] Circuit Board Material: Rogers 4350 The circuit board used in the final application should use RF circuit design techniques. Signal lines should have 50 ohm impedance while the package ground leads and exposed paddle should be connected directly to the ground plane similar to that shown. A sufficient number of via holes should be used to connect the top and bottom ground planes. The evaluation board should be mounted to an appropriate heat sink. The evaluation circuit board shown is available from Hittite upon request. For price, delivery, and to place orders, please contact Hittite Microwave Corporation: 20 Alpha Road, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373 Order On-line at www.hittite.com 8 - 237