HOLTEK HT82V806

HT82V806
CCD 6 Channel Vertical Driver
Features
· Operating voltage: 3.0V~5.5V
· Switchable between NTSC (EIA) and PAL (CCIR)
· Built-in seven circuits
- 2-level output:
· 24-pin SSOP (150mil) package
modes
2 circuits for vertical CCD clock driver
Output voltage level (typ.) = -9V to 0V
- 3-level output:
4 circuits for vertical CCD clock driver
Output voltage level (typ.) = -9V to 15V
- 2-level output:
1 circuit for shutter driver
Output voltage level (typ.) = -9V to 17V
General Description
HT82V806 is a CMOS vertical clock driver and shutter
driver IC for CCD area sensors. It has the capability of
converting the voltage and impedance from the CMOS
level.
Block Diagram
V O F D H
P O F D
V H 3 B X
V M B
V L
O F D X
V 2
V 2 X
V 4
V 1 X
V H 1 A X
V 3 B
V 3 X
V 3 A
Rev. 1.00
V D D
V 1 B
V S S
V 1 A
V H 3 A X
V M A
V H
V 4 X
V H 1 B X
1
February 8, 2006
HT82V806
Pin Assignment
P O F D
1
2 4
V M B
2
2 3
V H 3 B X
V L
3
2 2
O F D X
V 2
4
2 1
V 2 X
V 4
5
2 0
V 1 X
N C
6
1 9
V H 1 A X
V 3 B
7
1 8
V 3 X
V 3 A
8
1 7
V D D
V 1 B
9
1 6
V S S
V O F D H
V 1 A
1 0
1 5
V H 3 A X
V M A
1 1
1 4
V 4 X
V H
1 2
1 3
V H 1 B X
H T 8 2 V 8 0 6
2 4 S S O P -A
(1 5 0 m il)
Pin Description
Pin No.
Pin Name
I/O
Description
1
POFD
O
Electronic shutter pulse output (High level=VOFDH, low level=VL)
2
VMB
¾
Power supply for high level V2 and V4
3
VL
¾
Power supply for all low level output pulses
4
V2
O
Pulse to drive vertical CCD shift register; Connect to V2
5
V4
O
Pulse to drive vertical CCD shift register; Connect to V4
6
NC
¾
No connection
7
V3B
O
Pulse to drive vertical CCD shift register; Connect to V3B
8
V3A
O
Pulse to drive vertical CCD shift register; Connect to V3A
9
V1B
O
Pulse to drive vertical CCD shift register; Connect to V1B
10
V1A
O
Pulse to drive vertical CCD shift register; Connect to V1A
11
VMA
¾
Power supply for intermediate level V1A, V1B, V3A and V3B
12
VH
¾
Power supply for high level V1A, V1B, V3A and V3B
13
VHIBX
I
Pulse that transfers the charge of the photo-diode to the vertical shift register.
14
V4X
I
Vertical transfer pulse input
15
VH3AX
I
Pulse that transfers the charge of the photo-diode to the vertical shift register.
16
VSS
¾
Negative power supply, ground
17
VDD
¾
Positive power supply
18
V3X
I
Vertical transfer pulse input
19
VH1AX
I
Pulse that transfers the charge of the photo-diode to the vertical shift register.
20
V1X
I
Vertical transfer pulse input
21
V2X
I
Vertical transfer pulse input
22
OFDX
I
Electronic shutter pulse input
23
VH3BX
I
Pulse that transfers the charge of the photo-diode to the vertical shift register.
24
VOFDH
¾
Rev. 1.00
Power supply for high level POFD
2
February 8, 2006
HT82V806
Absolute Maximum Ratings
Supply Voltage .........................GND-0.3V to GND+6V
Storage Temperature ...........................-55°C to 150°C
Input Voltage ..............................VSS-0.3V to VDD+34V
Operating Temperature ..........................-25°C to 70°C
Note: These are stress ratings only. Stresses exceeding the range specified under ²Absolute Maximum Ratings² may
cause substantial damage to the device. Functional operation of this device at other conditions beyond those
listed in the specification is not implied and prolonged exposure to extreme conditions may affect device reliability.
Recommended Operating Conditions
Min.
Typ.
Max.
VDD
Symbol
3.0
3.3
5.5
VH
¾
15
¾
¾
-9
¾
¾
VL
Parameter
Supply Voltage
Unit
V
VMA, VMB
¾
0
VOFDH
¾
17
¾
VIN (LOW)
0
¾
0.3VDD
0.7VDD
¾
VDD
¾
15.734
¾
¾
15.625
¾
-20
¾
+70
VIN (HIGH)
Input Voltage
NTSC
Operating Frequency
PAL
TOPR
Operating Temperature
D.C. Characteristics
Symbol
VIL
Parameter
Input Low Voltage
V
kHz
°C
VH=15V, VL=-9V, VMA=0V, VMB=0V, VOFDH=15V, Ta=25°C
Test Conditions
Min.
Typ.
Max.
Unit
¾
0
¾
0.3VDD
V
¾
0.7VDD
V
VDD
Conditions
3.3V
VIH
Input High Voltage
3.3V
¾
VDD
VIL1
Input Low Current
3.3V VIL=0V
¾
¾
200
mA
VIH1
Input High Current
3.3V VIH=3.3V
¾
¾
1
mA
VOL
Output Low Voltage
3.3V IOL<1mA
¾
¾
-8.9
V
IOMLa<1mA
¾
0.1
V
IOMHa<1mA
¾
0.1
V
V
VOMLa
VOMHa
Output Intermediate Voltage 3.3V
IOMLb<1mA
¾
0.1
VOMHb
IOMHb<1mA
¾
0.1
V
RONH
IOH=20mA
¾
30
¾
W
RONOFH
IOFDH=20mA
¾
20
¾
W
¾
W
VOMLb
RONM
Output ON Resistance
3.3V IOM=20mA
¾
25
IOL=20mA
¾
20
¾
W
IDD
¾
¾
2.0
mA
IH
¾
¾
200
mA
¾
¾
200
mA
IM
¾
¾
200
mA
IL
¾
¾
200
mA
RONL
IOFDH
Rev. 1.00
Static Current
¾
3.3V
3
February 8, 2006
HT82V806
A.C. Characteristics
Symbol
VH=15V, VL=-9V, VMA=0V, VMB=0V, VOFDH=15V, Ta=25°C
Test Conditions
Parameter
Min.
Typ.
Max.
Unit
VIN to VM
(V1A, V1B, V2, V3A, V3B, V4)
¾
430
900
ns
VIN to VL
(V1A, V1B, V2, V3A, V3B, V4)
¾
370
800
ns
3.3V VIN to VH (V1A, V1B, V3A, V3B)
¾
550
1100
ns
3.3V VIN to VM (V1A, V1B, V3A, V3B)
¾
630
1300
ns
tTROFDH
(VL®VOFDH)
3.3V VIN to VOFDH (POFD)
¾
70
140
ns
tTFOFDL
(VOFDH®VL)
3.3V VIN to VL (POFD)
¾
60
120
ns
VDD
Conditions
tTRM
(VL®VM)
3.3V
tTFL
(VM®VL)
3.3V
tTRH
(VM®VH)
Sequential Delay
tTFM
(VH®VM)
Timing Diagrams
V
1 X
V
V H
V H
3 X
, V
, V H
, V H
1 A X
3 A X
V
D D
(3 .3 V )
G N D
(0 .0 V )
V
D D
(3 .3 V )
G N D
(0 .0 V )
V
(1 5 .0 V )
2 X
, V
4 X
1 B X
3 B X
tT
V
V
1 A
3 A
, V
, V
H
1 B
V
3 B
M A
L
V
2
, V
F M
R M
tT
F L
(0 .0 V )
(- 9 .0 V )
V
V
tT
tT
R H
M B
(0 .0 V )
4
(- 9 .0 V )
V
V
L
D D
(3 .3 V )
O F D X
G N D
V
(0 .0 V )
(1 5 .0 V )
O F D H
tT
tT
R O F D H
F O F D L
P O F D
V
Rev. 1.00
L
(- 9 .0 V )
4
February 8, 2006
HT82V806
Application Circuits
Equivalent Circuits
While V1A and V3A (or V1B and V3B) are measured, V1B and V3B (or V1A and V3A) are open.
(o r V
C
V
1 A
1 B
)
R
1
C
4 1
C
1 2
C
V
2
C
1
C
2
3 4
C S U B
C
3
C
R
3
V 3A
(o r V
4
3 B
)
C S U B = 5 0 0 p F
R
R G
Rev. 1.00
P O F D
4
4
2 3
2
R
V
R
5
1 to
R G =
C 1 to
C 12,
R 4= 2 7 W
5 W
C 4= 3 3 0 0 p F
C 23, C 34 , C 41= 1 5 0 0 p F
February 8, 2006
HT82V806
Package Information
24-pin SSOP (150mil) Outline Dimensions
1 3
2 4
A
B
1 2
1
C
C '
G
H
D
E
Symbol
Rev. 1.00
a
F
Dimensions in mil
Min.
Nom.
Max.
A
228
¾
244
B
150
¾
157
C
8
¾
12
C¢
335
¾
346
D
54
¾
60
E
¾
25
¾
F
4
¾
10
G
22
¾
28
H
7
¾
10
a
0°
¾
8°
6
February 8, 2006
HT82V806
Product Tape and Reel Specifications
Reel Dimensions
D
T 2
A
C
B
T 1
SSOP 24N (150mil)
Symbol
Description
A
Reel Outer Diameter
B
Reel Inner Diameter
Dimensions in mm
330±1.0
62±1.5
13.0+0.5
-0.2
C
Spindle Hole Diameter
D
Key Slit Width
2.0±0.5
T1
Space Between Flange
16.8+0.3
-0.2
T2
Reel Thickness
22.2±0.2
Rev. 1.00
7
February 8, 2006
HT82V806
Carrier Tape Dimensions
P 0
D
P 1
t
E
F
W
C
D 1
B 0
P
K 0
A 0
SSOP 24N (150mil)
Symbol
Description
Dimensions in mm
W
Carrier Tape Width
16.0+0.3
-0.1
P
Cavity Pitch
12.0±0.1
E
Perforation Position
1.75±0.1
F
Cavity to Perforation (Width Direction)
7.5±0.1
D
Perforation Diameter
1.5+0.1
D1
Cavity Hole Diameter
1.5+0.25
P0
Perforation Pitch
4.0±0.1
P1
Cavity to Perforation (Length Direction)
2.0±0.1
A0
Cavity Length
8.2±0.1
B0
Cavity Width
8.6±0.1
K0
Cavity Depth
3.0±0.1
t
Carrier Tape Thickness
C
Cover Tape Width
Rev. 1.00
0.35±0.05
13.3
8
February 8, 2006
HT82V806
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Copyright Ó 2006 by HOLTEK SEMICONDUCTOR INC.
The information appearing in this Data Sheet is believed to be accurate at the time of publication. However, Holtek assumes no responsibility arising from the use of the specifications described. The applications mentioned herein are used
solely for the purpose of illustration and Holtek makes no warranty or representation that such applications will be suitable
without further modification, nor recommends the use of its products for application that may present a risk to human life
due to malfunction or otherwise. Holtek¢s products are not authorized for use as critical components in life support devices
or systems. Holtek reserves the right to alter its products without prior notification. For the most up-to-date information,
please visit our web site at http://www.holtek.com.tw.
Rev. 1.00
9
February 8, 2006