HSMC HIRF830F

HI-SINCERITY
Spec. No. : MOS200407
Issued Date : 2004.10.01
Revised Date : 2005.04.22
Page No. : 1/4
MICROELECTRONICS CORP.
HIRF830 / HIRF830F
HIRF830 Series Pin Assignment
Tab
N-CHANNEL POWER MOSFET
3-Lead Plastic TO-220AB
Package Code: E
Pin 1: Gate
Pin 2 & Tab: Drain
Pin 3: Source
Description
This N - Channel MOSFETs provide the designer with the best
combination of fast switching, ruggedized device design, low onresistance and cost-effectiveness.
1
2
Features
3-Lead Plastic TO-220FP
Package Code: F
Pin 1: Gate
Pin 2: Drain
Pin 3: Source
• Dynamic dv/dt Rating
• Repetitive Avalanche Rated
• Fast Switching
• Ease of Paralleling
• Simple Drive Requirements
1
Thermal Characteristics
Symbol
Thermal Resistance
Junction to Case Max.
RθJA
Thermal Resistance
Junction to Ambient Max.
2
3
HIRF830 Series Symbol
Parameter
RθJC
3
Value
Units
TO-220AB
1.71
TO-220FP
3.3
62
D
°C/W
G
°C/W
S
Absolute Maximum Ratings
Symbol
VDSS
Parameter
Value
Units
Drain-Source Voltage
500
V
ID
Drain to Current (Continuous)
4.5
A
IDM
Drain to Current (Pulsed) (*1)
18
A
VGS
Gate-to-Source Voltage (Continue)
±20
V
Total Power Dissipation
TO-220AB
TO-220FP
74
38
W
Derate above 25°C
TO-220AB
TO-220FP
0.59
0.3
W/°C
EAS
Single Pulse Avalanche Energy (*2)
250
mJ
IAR
Avalanche Current (*1)
9
A
EAR
Repetitive Avalanche Energy (*1)
7.4
mJ
dv/dt
Peak Diode Recovery (*3)
5
V/ns
Operating Temperature Range
-55 to 150
°C
Tstg
Storage Temperature Range
-55 to 150
°C
TL
Maximum Lead Temperature for Soldering Purposes, 1/8” from
case for 10 seconds
300
°C
PD
Tj
*1: Repetitive rating; pulse width limited by max. junction temperature
*2: VDD=50V, starting Tj=25°C, L=24mH, RG=25Ω, IAS=4.5A
*3: ISD≤4.5A, di/dt≤75A/us, VDD≤V(BR)DSS, TJ≤150°C
HIRF830, HIRF830F
HSMC Product Specification
HI-SINCERITY
Spec. No. : MOS200407
Issued Date : 2004.10.01
Revised Date : 2005.04.22
Page No. : 2/4
MICROELECTRONICS CORP.
ELectrical Characteristics (Tj=25°C, unless otherwise specified)
Symbol
V(BR)DSS
IDSS
Characteristic
Drain-Source Breakdown Voltage (VGS=0V, ID=250uA)
Drain-Source Leakage Current (VDS=500V, VGS=0V)
Min.
Typ.
Max.
Unit
500
-
-
V
-
-
1
uA
50
uA
Drain-Source Leakage Current (VDS=400V, VGS=0V, Tj=125°C)
IGSSF
Gate-Source Leakage Current-Forward (Vgsf=20V, VDS=0V)
-
-
100
nA
IGSSR
Gate-Source Leakage Current-Reverse (Vgsr=-20V, VDS=0V)
-
-
-100
nA
VGS(th)
Gate Threshold Voltage (VDS=VGS, ID=250uA)
2
-
4
V
RDS(on)
Static Drain-Source On-Resistance (VGS=10V, ID=2.7A)(*4)
-
-
1.5
Ω
2.5
-
-
S
-
800
-
-
100
-
gFS
Forward Transconductance (VDS=50V, ID=2.7A)(*4)
Ciss
Input Capacitance
Coss
Output Capacitance
Crss
Reverse Transfer Capacitance
-
50
-
td(on)
Turn-on Delay Time
-
8.2
-
-
46
-
-
90
-
-
45
-
-
-
38
-
-
5
-
-
22
tr
td(off)
tf
Rise Time
Turn-off Delay Time
VDS=25V, VGS=0V, f=1MHz
(VDD=250V, ID=4.5A, RG=50Ω,
RD=79Ω)(*4)
Fall Time
pF
ns
Qg
Total Gate Charge
Qgs
Gate-Source Charge
Qgd
Gate-Drain Charge
LD
Internal Drain Inductance (Measured from the drain lead 0.25” from
package to center of die)
-
4.5
-
nH
LS
Internal Source Inductance (Measured from the drain lead 0.25” from
package to source bond pad)
-
7.5
-
nH
Min.
Typ.
-
1
2
-
**
-
-
320
640
ns
-
-
1.6
V
(VDS=400V, ID=3.1A, VGS=10V)
(*4)
nC
*4: Pulse Test: Pulse Width≤300us, Duty Cycle≤2%
Source-Drain Diode
Symbol
Qrr
Characteristic
Reverse Recovery Charge
ton
Forward Turn-On Time
trr
Reverse Recovery Time
VSD
Diode Forward Voltage
IF=3.1A, di/dt=100A/us, Tj=25°C
(*4)
IS=4.5A, VGS=0V, Tj=25°C (*4)
Max. Units
uC
**: Negligible, Dominated by circuit inductance
HIRF830, HIRF830F
HSMC Product Specification
HI-SINCERITY
Spec. No. : MOS200407
Issued Date : 2004.10.01
Revised Date : 2005.04.22
Page No. : 3/4
MICROELECTRONICS CORP.
TO-220AB Dimension
DIM
A
B
C
D
E
F
G
H
I
J
K
L
M
N
O
P
Marking:
A
F
B
Pb Free Mark
Pb-Free: " . " (Note)
Normal: None
H
E
C
D
I RF
830
Date Code
H
K
M
I
3
G
N
2
O
P
J
L
Note: Green label is used for pb-free packing
Pin Style: 1.Gate 2 & Tab.Drain 3.Source
Material:
• Lead solder plating: Sn60/Pb40 (Normal),
Sn/3.0Ag/0.5Cu or Pure-Tin (Pb-free)
• Mold Compound: Epoxy resin family,
flammability solid burning class: UL94V-0
1
Tab
Control Code
Min.
5.58
8.38
4.40
1.15
0.35
2.03
9.66
3.00
0.75
2.54
1.14
12.70
14.48
Max.
7.49
8.90
4.70
1.39
0.60
2.92
10.28
*16.25
*3.83
4.00
0.95
3.42
1.40
*2.54
14.27
15.87
*: Typical, Unit: mm
3-Lead TO-220AB
Plastic Package
HSMC Package Code: E
TO-220FP Dimension
Marking:
A
α4
α1
Pb Free Mark
Pb-Free: " . " (Note)
Normal: None
H
E O
C
D
α3
α2
α5
Date Code
G
I
J
N
2
K
1
M
L
Control Code
Note: Green label is used for pb-free packing
Pin Style: 1.Gate 2.Drain 3.Source
3
F
I RF
830F
Material:
• Lead solder plating: Sn60/Pb40 (Normal),
Sn/3.0Ag/0.5Cu or Pure-Tin (Pb-free)
• Mold Compound: Epoxy resin family,
flammability solid burning class: UL94V-0
DIM
Min.
A
6.48
C
4.40
D
2.34
E
0.45
F
9.80
G
3.10
I
2.70
J
0.60
K
2.34
L
12.48
M
15.67
N
0.90
O
2.00
α1/2/4/5
α3
Max.
7.40
4.90
3.00
0.80
10.36
3.60
3.43
1.00
2.74
13.60
16.20
1.47
2.96
*5o
*27o
*: Typical, Unit: mm
3-Lead TO-220FP
Plastic Package
HSMC Package Code: F
Important Notice:
• All rights are reserved. Reproduction in whole or in part is prohibited without the prior written approval of HSMC.
• HSMC reserves the right to make changes to its products without notice.
• HSMC semiconductor products are not warranted to be suitable for use in Life-Support Applications, or systems.
• HSMC assumes no liability for any consequence of customer product design, infringement of patents, or application assistance.
Head Office And Factory:
• Head Office (Hi-Sincerity Microelectronics Corp.): 10F.,No. 61, Sec. 2, Chung-Shan N. Rd. Taipei Taiwan R.O.C.
Tel: 886-2-25212056 Fax: 886-2-25632712, 25368454
• Factory 1: No. 38, Kuang Fu S. Rd., Fu-Kou Hsin-Chu Industrial Park Hsin-Chu Taiwan. R.O.C
Tel: 886-3-5983621~5 Fax: 886-3-5982931
HIRF830, HIRF830F
HSMC Product Specification
HI-SINCERITY
Spec. No. : MOS200407
Issued Date : 2004.10.01
Revised Date : 2005.04.22
Page No. : 4/4
MICROELECTRONICS CORP.
Soldering Methods for HSMC’s Products
1. Storage environment: Temperature=10oC~35oC Humidity=65%±15%
2. Reflow soldering of surface-mount devices
Figure 1: Temperature profile
tP
Critical Zone
TL to TP
TP
Ramp-up
TL
tL
Temperature
Tsmax
Tsmin
tS
Preheat
Ramp-down
25
t 25oC to Peak
Time
Profile Feature
Sn-Pb Eutectic Assembly
Pb-Free Assembly
<3 C/sec
<3oC/sec
- Temperature Min (Tsmin)
100oC
150oC
- Temperature Max (Tsmax)
150oC
200oC
60~120 sec
60~180 sec
<3oC/sec
<3oC/sec
183oC
217oC
Average ramp-up rate (TL to TP)
o
Preheat
- Time (min to max) (ts)
Tsmax to TL
- Ramp-up Rate
Time maintained above:
- Temperature (TL)
- Time (tL)
60~150 sec
Peak Temperature (TP)
Time within 5oC of actual Peak
Temperature (tP)
Ramp-down Rate
Time 25oC to Peak Temperature
o
o
60~150 sec
240 C +0/-5 C
260oC +0/-5oC
10~30 sec
20~40 sec
<6oC/sec
<6oC/sec
<6 minutes
<8 minutes
Peak temperature
Dipping time
245 C ±5 C
5sec ±1sec
3. Flow (wave) soldering (solder dipping)
Products
Pb devices.
Pb-Free devices.
HIRF830, HIRF830F
o
o
o
o
260 C +0/-5 C
5sec ±1sec
HSMC Product Specification