HI-SINCERITY Spec. No. : MOS200509 Issued Date : 2005.10.01 Revised Date : 2005.10.06 Page No. : 1/4 MICROELECTRONICS CORP. H9435S • P-Channel Enhancement-Mode MOSFET (-30V, -5.3A) 8-Lead Plastic SO-8 Package Code: S H9435S Symbol & Pin Assignment Features 5 4 6 3 • RDS(on)=60mΩ@VGS=-10V, ID=-5.3A 7 2 • RDS(on)=90mΩ@VGS=-4.5V, ID=-4.2A 8 1 Pin 1 / 2 / 3: Source Pin 4: Gate Pin 5 / 6 / 7 / 8: Drain • Advanced Trench Process Technology • High Density Cell Design for Ultra Low On-Resistance • Fully Characterized Avalanche Voltage and Current • Improved Shoot-Through FOM Absolute Maximum Ratings (T =25 C, unless otherwise noted) o A Symbol Parameter Ratings Units VDS Drain-Source Voltage -30 V VGS Gate-Source Voltage ±20 V ID Drain Current (Continuous) -5.3 A IDM Drain Current (Pulsed) *1 -20 A PD Total Power Dissipation @TA=25oC 2.5 W -55 to +150 °C 30 °C/W 50 °C/W Tj, Tstg RθJC RθJA Operating and Storage Temperature Range Thermal Resistance Junction to Case Thermal Resistance Junction to Ambient (PCB mounted) *2 *1: Maximum DC current limited by the package *2: 1-in2 2oz Cu PCB board H9435S HSMC Product Specification HI-SINCERITY Spec. No. : MOS200509 Issued Date : 2005.10.01 Revised Date : 2005.10.06 Page No. : 2/4 MICROELECTRONICS CORP. Electrical Characteristics (TA=25°C, unless otherwise noted) Symbol Characteristic Test Conditions Min. Typ. Max. Unit VGS=0V, ID=-250uA 30 - - V VGS=-4.5V, ID=-4.2A - 82 90 VGS=-10V, ID=-5.3A - 50 60 • Static BVDSS Drain-Source Breakdown Voltage RDS(on) Drain-Source On-State Resistance VGS(th) Gate Threshold Voltage VDS=VGS, ID=-250uA -1 - -3 V IDSS Zero Gate Voltage Drain Current VDS=-24V, VGS=0V - - -1 uA IGSS Gate-Body Leakage Current VGS=±20V, VDS=0V - - ±100 nA gFS Forward Transconductance VDS=-15V, ID=-5.3A 4 7 - S - 9.52 - - 3.43 - mΩ • Dynamic Qg Total Gate Charge Qgs Gate-Source Charge Qgd Gate-Drain Charge - 1.71 - Ciss Input Capacitance - 551.57 - Coss Output Capacitance - 90.96 - Crss Reverse Transfer Capacitance - 60.79 - td(on) Turn-on Delay Time - 10.8 - tr Turn-on Rise Time VDD=10V, RL=15Ω, ID=-1A, - 2.33 - td(off) Turn-off Delay Time VGEN=-10V, RG=6Ω - 22.53 - - 3.87 - - - -1.9 A - - -1.3 V tf VDS=-15V, ID=-5.3A, VGS=-10V VDS=-15V, VGS=0V, f=1MHz Turn-off Fall Time nC PF Ns • Drain-Source Diode Characteristics IS VSD Maximum Diode Forward Current Drain-Source Diode Forward Voltage VGS=0V, IS=-5.3A Note: Pulse Test: Pulse Width ≤300us, Duty Cycle≤2% H9435S HSMC Product Specification HI-SINCERITY Spec. No. : MOS200509 Issued Date : 2005.10.01 Revised Date : 2005.10.06 Page No. : 3/4 MICROELECTRONICS CORP. SO-8 Dimension A DIM A B C D E F G H I J K L M N O H9435S Marking: G Pb Free Mark Pb-Free: " . " (Note) H Normal: None 8 7 B 6 C Pin1 Index 2 3 I 5 Pin 1 Index Date Code H 4 Note: Green label is used for pb-free packing E Material: • Lead solder plating: Sn60/Pb40 (Normal), Sn/3.0Ag/0.5Cu or Pure-Tin (Pb-free) • Mold Compound: Epoxy resin family, flammability solid burning class: UL94V-0 K Part A Part A Control Code Pin Style: 1,2,3: Source 4: Gate 5,6,7,8: Drain J D S 9 4 3 5 M L N Min. 4.85 3.85 5.80 1.22 0.37 3.74 1.45 4.80 0.05 0.30 0.19 0.37 0.23 0.08 0.00 Max. 5.10 3.95 6.20 1.32 0.47 3.88 1.65 5.10 0.20 0.70 0.25 0.52 0.28 0.13 0.15 *: Typical, Unit: mm O F 8-Lead SO-8 Plastic Surface Mounted Package HSMC Package Code: S Important Notice: • All rights are reserved. Reproduction in whole or in part is prohibited without the prior written approval of HSMC. • HSMC reserves the right to make changes to its products without notice. • HSMC semiconductor products are not warranted to be suitable for use in Life-Support Applications, or systems. • HSMC assumes no liability for any consequence of customer product design, infringement of patents, or application assistance. Head Office And Factory: • Head Office (Hi-Sincerity Microelectronics Corp.): 10F.,No. 61, Sec. 2, Chung-Shan N. Rd. Taipei Taiwan R.O.C. Tel: 886-2-25212056 Fax: 886-2-25632712, 25368454 • Factory 1: No. 38, Kuang Fu S. Rd., Fu-Kou Hsin-Chu Industrial Park Hsin-Chu Taiwan. R.O.C Tel: 886-3-5983621~5 Fax: 886-3-5982931 H9435S HSMC Product Specification HI-SINCERITY Spec. No. : MOS200509 Issued Date : 2005.10.01 Revised Date : 2005.10.06 Page No. : 4/4 MICROELECTRONICS CORP. Soldering Methods for HSMC’s Products 1. Storage environment: Temperature=10oC~35oC Humidity=65%±15% 2. Reflow soldering of surface-mount devices Figure 1: Temperature profile tP Critical Zone TL to TP TP Ramp-up TL tL Temperature Tsmax Tsmin tS Preheat Ramp-down 25 t 25oC to Peak Time Profile Feature Sn-Pb Eutectic Assembly Pb-Free Assembly <3oC/sec <3oC/sec - Temperature Min (Tsmin) 100oC 150oC - Temperature Max (Tsmax) 150oC 200oC 60~120 sec 60~180 sec <3oC/sec <3oC/sec 183oC 217oC Average ramp-up rate (TL to TP) Preheat - Time (min to max) (ts) Tsmax to TL - Ramp-up Rate Time maintained above: - Temperature (TL) - Time (tL) 60~150 sec Peak Temperature (TP) Time within 5oC of actual Peak Temperature (tP) Ramp-down Rate Time 25oC to Peak Temperature o o 60~150 sec 240 C +0/-5 C 260oC +0/-5oC 10~30 sec 20~40 sec <6oC/sec <6oC/sec <6 minutes <8 minutes Peak temperature Dipping time 245oC ±5oC 5sec ±1sec 3. Flow (wave) soldering (solder dipping) Products Pb devices. Pb-Free devices. H9435S o o 260 C +0/-5 C 5sec ±1sec HSMC Product Specification