HSMC H8205A

HI-SINCERITY
Spec. No. : MOS200905
Issued Date : 2009.02.27
Revised Date : 2010.06.30
Page No. : 1/4
MICROELECTRONICS CORP.
H8205A
Dual N-Channel Enhancement-Mode MOSFET (20V, 6A)
8-Lead Plastic TSSOP-8L
Package Code: TS
H8205A Symbol & Pin Assignment
Description
8
This N-Channel 2.5V specified MOSFET is a rugged gate version of advanced
trench process. It has been optimized for power management applications with a
wide range of gate drive voltage (2.5V-10V)
7
6
5
3
4
Pin 1: Drain
Pin 2 / 3: Source 1
Pin 4: Gate 1
Pin 5: Gate 2
Pin 6 / 7: Source 2
Pin 8: Drain
Q2
Q1
1
2
Features
 RDS(on)=40m@VGS=2.5V, ID=5.2A; RDS(on)=25m@VGS=4.5V, ID=6A
 High Density Cell Design for Ultra Low On-Resistance
 High Power and Current Handing Capability
 Fully Characterized Avalanche Voltage and Current
 Ideal for Li ion Battery Pack Applications
Applications
 Battery Protection
 Load Switch
 Power Management
Absolute Maximum Ratings (TA=25oC, unless otherwise noted)
Symbol
Parameter
Ratings
Units
VDS
Drain-Source Voltage
20
V
VGS
Gate-Source Voltage
8
V
6
A
ID
IDM
PD
Tj, Tstg
RJA
Drain Current
Drain Current (Pulsed)
*1
30
A
o
1.5
W
o
0.96
W
-55 to +150
C
83
C/W
Total Power Dissipation @TA=25 C
Total Power Dissipation @TA=75 C
Operating and Storage Temperature Range
Thermal Resistance Junction to Ambient
*2
*1: Maximum DC current limited by the package
*2: 1-in2 2oz Cu PCB board
H8205A
HSMC Product Specification
HI-SINCERITY
Spec. No. : MOS200905
Issued Date : 2009.02.27
Revised Date : 2010.06.30
Page No. : 2/4
MICROELECTRONICS CORP.
Electrical Characteristics (TA=25C, unless otherwise noted)
Symbol
Characteristic
Test Conditions
Min.
Typ.
Max.
Unit
VGS=0V, ID=250uA
18
20
-
V
VGS=2.5V, ID=5.2A
-
40
VGS=4.5V, ID=6A
-
25
 Static
BVDSS
Drain-Source Breakdown Voltage
RDS(on)
Drain-Source On-State Resistance
VGS(th)
m
Gate Threshold Voltage
VDS=VGS, ID=250uA
0.5
-
1.5
V
IDSS
Zero Gate Voltage Drain Current
VDS=16V, VGS=0V
-
-
1
uA
IGSS
Gate-Body Leakage Current
VGS=8V, VDS=0V
-
-
100
nA
gFS
Forward Transconductance
VDS=10V, ID=6A
7
13
-
S
-
4.86
-
-
0.92
-
 Dynamic
Qg
Total Gate Charge
Qgs
Gate-Source Charge
Qgd
Gate-Drain Charge
-
1.4
-
Ciss
Input Capacitance
-
562
-
Coss
Output Capacitance
-
106
-
Crss
Reverse Transfer Capacitance
-
75
-
td(on)
Turn-on Delay Time
-
8.1
-
tr
Turn-on Rise Time
VDD=10V, ID=1A, VGS=4.5V
-
9.95
-
td(off)
Turn-off Delay Time
RGEN=6
-
21.85
-
-
5.35
-
-
-
1.7
A
-
-
1.2
V
VDS=10V, ID=6A, VGS=4.5V
VDS=8V, VGS=0V, f=1MHz
nC
pF
ns
tf
Turn-off Fall Time
 Drain-Source Diode Characteristics
IS
VSD
Maximum Diode Forward Current
Drain-Source Diode Forward Voltage
VGS=0V, IS=1.7A
Note: Pulse Test: Pulse Width 300us, Duty Cycle2%
Switching
Test Circuit
Switching
Waveforms
ton
VDD
td(on)
tr
toff
td(off)
tf
90%
90%
RD
VIN
D
VOUT
10%
Output, VOUT
10%
Inverted
VGEN
90%
RG
50%
G
50%
S
Input, VIN
H8205A
10%
Pulse Width
HSMC Product Specification
HI-SINCERITY
MICROELECTRONICS CORP.
Spec. No. : MOS200905
Issued Date : 2009.02.27
Revised Date : 2010.06.30
Page No. : 3/4
TSSOP-8L Dimension
DIM
A
A1
b
C
D
E
E1
e
L
S
H8205A Marking:
D
8
7
6
Month Code
Year Code
5
E1
E
Pin Style: 1.S2 2.G2 3.S1 4.G1 5 & 6 & 7 & 8.D
Pin1
index
2
Note: Green label is used for pb-free packing
3
4
Detail F
R 0.15
A1
Min.
Max.
1.20
0.05
0.15
0.19
0.3
0.09
0.20
2.90
3.10
6.20
6.60
4.30
4.50
0.65 BSC
0.45
0.75
o
o
0
8
*: Typical, Unit: mm
Material:
 Lead solder plating: Sn60/Pb40 (Normal),
Sn/3.0Ag/0.5Cu or Pure-Tin (Pb-free)
 Mold Compound: Epoxy resin family,
flammability solid burning class: UL94V-0
b
C
A
e
Seating
Plane
S
L
0.25
Detail F
8-Lead TSSOP-8L Plastic
Surface Mounted Package
HSMC Package Code: TS
Important Notice:
 All rights are reserved. Reproduction in whole or in part is prohibited without the prior written approval of HSMC.
 HSMC reserves the right to make changes to its products without notice.
 HSMC semiconductor products are not warranted to be suitable for use in Life-Support Applications, or systems.
 HSMC assumes no liability for any consequence of customer product design, infringement of patents, or application assistance.
Head Office And Factory:
 Head Office (Hi-Sincerity Microelectronics Corp.): 10F.,No. 61, Sec. 2, Chung-Shan N. Rd. Taipei Taiwan R.O.C.
Tel: 886-2-25212056 Fax: 886-2-25632712, 25368454
 Factory 1: No. 38, Kuang Fu S. Rd., Fu-Kou Hsin-Chu Industrial Park Hsin-Chu Taiwan. R.O.C
Tel: 886-3-5983621~5 Fax: 886-3-5982931
H8205A
HSMC Product Specification
HI-SINCERITY
Spec. No. : MOS200905
Issued Date : 2009.02.27
Revised Date : 2010.06.30
Page No. : 4/4
MICROELECTRONICS CORP.
Soldering Methods for HSMC’s Products
1. Storage environment: Temperature=10oC~35oC Humidity=65%±15%
2. Reflow soldering of surface-mount devices
Figure 1: Temperature profile
tP
Critical Zone
TL to TP
TP
Ramp-up
TL
tL
Temperature
Tsmax
Tsmin
tS
Preheat
Ramp-down
25
t 25oC to Peak
Time
Profile Feature
Sn-Pb Eutectic Assembly
Pb-Free Assembly
<3oC/sec
<3oC/sec
- Temperature Min (Tsmin)
o
100 C
o
150 C
- Temperature Max (Tsmax)
150oC
200oC
60~120 sec
60~180 sec
<3oC/sec
<3 C/sec
o
183 C
217oC
Average ramp-up rate (TL to TP)
Preheat
- Time (min to max) (ts)
Tsmax to TL
- Ramp-up Rate
o
Time maintained above:
- Temperature (TL)
- Time (tL)
60~150 sec
Peak Temperature (TP)
Time within 5oC of actual Peak
Temperature (tP)
Ramp-down Rate
Time 25oC to Peak Temperature
o
o
60~150 sec
240 C +0/-5 C
260oC +0/-5oC
10~30 sec
20~40 sec
<6oC/sec
<6oC/sec
<6 minutes
<8 minutes
Peak temperature
Dipping time
245oC 5oC
5sec 1sec
3. Flow (wave) soldering (solder dipping)
Products
Pb devices.
Pb-Free devices.
H8205A
o
o
260 C +0/-5 C
5sec 1sec
HSMC Product Specification