HY57V281620A 4 Banks x 2M x 16bits Synchronous DRAM DESCRIPTION The Hynix HY57V281620A is a 134,217,728bit CMOS Synchronous DRAM, ideally suited for the main memory applications which require large memory density and high bandwidth. HY57V281620A is organized as 4banks of 2,097,152x16 HY57V281620A is offering fully synchronous operation referenced to a positive edge of the clock. All inputs and outputs are synchronized with the rising edge of the clock input. The data paths are internally pipelined to achieve very high bandwidth. All input and output voltage levels are compatible with LVTTL. Programmable options include the length of pipeline (Read latency of 2 or 3), the number of consecutive read or write cycles initiated by a single control command (Burst length of 1,2,4,8, or full page), and the burst count sequence(sequential or interleave). A burst of read or write cycles in progress can be terminated by a burst terminate command or can be interrupted and replaced by a new burst read or write command on any cycle. (This pipelined design is not restricted by a `2N` rule.) FEATURES • Single 3.3±0.3V power supply • Auto refresh and self refresh • All device pins are compatible with LVTTL interface • 4096 refresh cycles / 64ms • JEDEC standard 400mil 54pin TSOP-II with 0.8mm of pin pitch • Programmable Burst Length and Burst Type • All inputs and outputs referenced to positive edge of system clock - 1, 2, 4, 8 or Full page for Sequential Burst • Data mask function by UDQM or LDQM • Internal four banks operation - 1, 2, 4 or 8 for Interleave Burst • Programmable CAS Latency ; 2, 3 Clocks ORDERING INFORMATION Part No. Clock Frequency HY57V281620AT-6 166MHz HY57V281620AT-7 143MHz HY57V281620AT-K 133MHz HY57V281620AT-H 133MHz HY57V281620AT-8 125MHz HY57V281620AT-P 100MHz HY57V281620AT-S 100MHz HY57V281620ALT-6 166MHz HY57V281620ALT-7 143MHz HY57V281620ALT-K 133MHz HY57V281620ALT-H 133MHz HY57V281620ALT-8 125MHz HY57V281620ALT-P 100MHz HY57V281620ALT-S 100MHz Power Organization Interface Package 4Banks x 2Mbits x16 LVTTL 400mil 54pin TSOP II Normal Low power This document is a general product description and is subject to change without notice. Hynix does not assume any responsibility for use of circuits described. No patent licenses are implied. Rev. 1.3/Aug. 01 HY57V281620A PIN CONFIGURATION V DD DQ0 VDDQ DQ1 DQ2 VSSQ DQ3 DQ4 VDDQ DQ5 DQ6 VSSQ DQ7 V DD LDQM /WE /CAS /RAS /CS BA0 BA1 A10/AP A0 A1 A2 A3 V DD 1 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 17 18 19 20 21 22 23 24 25 26 27 54pin TSOP II 400mil x 875mil 0.8mm pin pitch 54 53 52 51 50 49 48 47 46 45 44 43 42 41 40 39 38 37 36 35 34 33 32 31 30 29 28 V SS DQ15 V SSQ DQ14 DQ13 V DDQ DQ12 DQ11 V SSQ DQ10 DQ9 V DDQ DQ8 V SS NC UDQM CLK CKE NC A11 A9 A8 A7 A6 A5 A4 V SS PIN DESCRIPTION PIN PIN NAME DESCRIPTION CLK Clock The system clock input. All other inputs are registered to the SDRAM on the rising edge of CLK CKE Clock Enable Controls internal clock signal and when deactivated, the SDRAM will be one of the states among power down, suspend or self refresh CS Chip Select Enables or disables all inputs except CLK, CKE, UDQM and LDQM BA0, BA1 Bank Address Selects bank to be activated during RAS activity Selects bank to be read/written during CAS activity A0 ~ A11 Address Row Address : RA0 ~ RA11, Column Address : CA0 ~ CA8 Auto-precharge flag : A10 RAS, CAS, WE Row Address Strobe, Column Address Strobe, Write Enable RAS, CAS and WE define the operation Refer function truth table for details UDQM, LDQM Data Input/Output Mask Controls output buffers in read mode and masks input data in write mode DQ0 ~ DQ15 Data Input/Output Multiplexed data input / output pin V DD /VSS Power Supply/Ground Power supply for internal circuits and input buffers V DDQ /VSSQ Data Output Power/Ground Power supply for output buffers NC No Connection No connection Rev. 1.3/Aug. 01 3 HY57V281620A FUNCTIONAL BLOCK DIAGRAM 2Mbit x 4banks x 16 I/O Synchronous DRAM Self refresh logic & timer Internal Row counter 2Mx16 Bank 3 CLK Row active Row Pre Decoders 2Mx16 Bank 2 CS Column Active Column Pre Decoders UDQM LDQM A0 A1 Rev. 1.3/Aug. 01 DQ14 Column Add Counter Address Registers Address buffers A11 BA0 BA1 DQ1 DQ15 Y decoders Bank Select DQ0 I/O Buffer & Logic WE Memory Cell Array Sense AMP & I/O Gate refresh 2Mx16 Bank 0 X decoders CAS State Machine RAS 2Mx16 Bank 1 X decoders X decoders X decoders CKE Burst Counter Mode Registers CAS Latency Data Out Control Pipe Line Control 4 HY57V281620A ABSOLUTE MAXIMUM RATINGS Parameter Symbol Rating Unit Ambient Temperature TA 0 ~ 70 °C Storage Temperature TSTG -55 ~ 125 °C Voltage on Any Pin relative to V S S V IN, VOUT -1.0 ~ 4.6 V Voltage on V DD relative to VSS V DD, V DDQ -1.0 ~ 4.6 V Short Circuit Output Current IO S 50 mA Power Dissipation PD 1 W Soldering Temperature ⋅ Time TSOLDER 260 ⋅ 10 °C ⋅ Sec Note : Operation at above absolute maximum rating can adversely affect device reliability. DC OPERATING CONDITION (T A=0 to 70°C ) Parameter Symbol Min Typ Max Unit Note Power Supply Voltage V DD , VDDQ 3.0 3.3 3.6 V 1 Input High voltage V IH 2.0 3.0 V DDQ + 0.3 V 1,2 Input Low voltage V IL -0.3 0 0.8 V 1,3 Note Note : 1.All voltages are referenced to VSS = 0V 2.V IH(max) is acceptable 5.6V AC pulse width with <=3ns of duration. 3.V IL(min) is acceptable -2.0V AC pulse width with <=3ns of duration. AC OPERATING TEST CONDITION (TA =0 to 70°C, VDD =3.3±0.3V, VSS=0V) Parameter Symbol Value Unit AC Input High / Low Level Voltage V IH / VIL 2.4/0.4 V Input Timing Measurement Reference Level Voltage Vtrip 1.4 V Input Rise / Fall Time tR / tF 1 ns Output Timing Measurement Reference Level Voltage Voutref 1.4 V CL 50 pF Output Load Capacitance for Access Time Measurement 1 Note : 1.Output load to measure access times is equivalent to two TTL gates and one capacitor (50pF). For details, refer to AC/DC output load circuit Rev. 1.3/Aug. 01 5 HY57V281620A CAPACITANCE (TA=25°C, f=1MHz) -6/7/K/H Parameter Pin Input capacitance Data input / output capacitance -8/P/S Symbol Unit Min Max Min Max CLK C I1 2.5 3.5 2.5 4.0 pF A0 ~ A11, BA0, BA1, CKE, CS, RAS, CAS , WE, UDQM, LDQM CI 2 2.5 3.8 2.5 5.0 pF DQ0 ~ DQ15 C I/O 4.0 6.5 4.0 6.5 pF OUTPUT LOAD CIRCUIT Vtt=1.4V RT=250 Ω Output Output 50pF 50pF DC Output Load Circuit AC Output Load Circuit DC CHARACTERISTICS I (TA=0 to 70°C, VDD =3.3±0.3V) Parameter Symbol Min. Max Unit Note Input Leakage Current ILI -1 1 uA 1 Output Leakage Current ILO -1 1 uA 2 Output High Voltage V OH 2.4 - V IOH = -4mA Output Low Voltage V OL - 0.4 V IOL = +4mA Note : 1.V IN = 0 to 3.6V, All other pins are not tested under V IN =0V 2.DOUT is disabled, VOUT =0 to 3.6 Rev. 1.3/Aug. 01 6 HY57V281620A DC CHARACTERISTICS II (TA=0 to 70°C, VDD =3.3±0.3V, VSS =0V) Speed Parameter Symbol Test Condition -6 -7 -K -H -8 -P -S 120 120 110 110 100 100 100 IDD1 Burst length=1, One bank active tRC ≥ tRC (min), IOL =0mA IDD2P CKE ≤ V IL (max), tCK = 15ns IDD2PS CKE ≤ V IL (max), tCK = IDD2N CKE ≥ V IH (min), CS ≥ V IH (min), tCK = 15ns Input signals are changed one time during 2clks. All other pins ≥ V DD -0.2V or ≤ 0.2V 20 IDD2NS CKE ≥ V IH (min), tCK = ∞ Input signals are stable. 10 IDD3P CKE ≤ V IL (max), tCK = 15ns 7 IDD3PS CKE ≤ V IL (max), tCK = IDD3N CKE ≥ V IH (min), CS ≥ V IH (min), tCK = 15ns Input signals are changed one time during 2clks. All other pins ≥ V DD -0.2V or ≤ 0.2V 40 IDD3NS CKE ≥ V IH (min), tCK = ∞ Input signals are stable. 40 Burst Mode Operating Current IDD4 tCK ≥ tCK(min), IOL=0mA All banks active Auto Refresh Current IDD5 tRRC ≥ tRRC (min), All banks active Self Refresh Current IDD6 CKE ≤ 0.2V Operating Current Precharge Standby Current in Power Down Mode Precharge Standby Current in Non Power Down Mode Active Standby Current in Power Down Mode Active Standby Current in Non Power Down Mode Unit Note mA 1 2 mA ∞ 2 mA mA ∞ 7 mA CL=3 140 130 120 120 110 100 100 CL=2 100 100 120 100 100 100 100 240 240 240 220 200 200 200 mA 1 mA 2 2 mA 3 800 uA 4 Note : 1.IDD1 and I DD4 depend on output loading and cycle rates. Specified values are measured with the output open 2.Min. of tRRC (Refresh RAS cycle time) is shown at AC CHARACTERISTICS II 3.HY57V281620AT-6/7/K/H/8/P/S 4.HY57V281620ALT-6/7/K/H/8/P/S Rev. 1.3/Aug. 01 7 HY57V281620A AC CHARACTERISTICS I (AC operating conditions unless otherwise noted) -6 Parameter CAS Latency = 3 tCK3 Max 6 Min Max 7 1000 -H -8 -P -S Min Max Min 7.5 1000 10 Max 7.5 1000 7.5 Min Max 8 1000 10 Min Max 10 1000 10 Min 10 1000 10 Note Max ns 1000 tCK2 10 Clock High Pulse Width tCHW 2.5 - 2.5 - 2.5 - 2.5 - 3 - 3 - 3 - ns 1 Clock Low Pulse Width tCLW 2.5 - 2.5 - 2.5 - 2.5 - 3 - 3 - 3 - ns 1 CAS Latency = 3 tAC3 - 5.4 - 5.4 - 5.4 - 5.4 - 6 - 6 - 6 ns CAS Latency = 2 tAC2 - 6 - 6 - 5.4 - 6 - 6 - 6 - 6 ns Access Time From Clock CAS Latency = 2 -K Unit Min System Clock Cycle Time -7 Symbol 12 ns 2 Data-Out Hold Time tOH 2.7 - 2.7 - 2.7 - 2.7 - 3 - 3 - 3 - ns Data-Input Setup Time tDS 1.5 - 1.5 - 1.5 - 1.5 - 2 - 2 - 2 - ns 1 Data-Input Hold Time tDH 0.8 - 0.8 - 0.8 - 0.8 - 1 - 1 - 1 - ns 1 Address Setup Time tAS 1.5 - 1.5 - 1.5 - 1.5 - 2 - 2 - 2 - ns 1 Address Hold Time tAH 0.8 - 0.8 - 0.8 - 0.8 - 1 - 1 - 1 - ns 1 CKE Setup Time tCKS 1.5 - 1.5 - 1.5 - 1.5 - 2 - 2 - 2 - ns 1 CKE Hold Time tCKH 0.8 - 0.8 - 0.8 - 0.8 - 1 - 1 - 1 - ns 1 Command Setup Time tCS 1.5 - 1.5 - 1.5 - 1.5 - 2 - 2 - 2 - ns 1 Command Hold Time tCH 0.8 - 0.8 - 0.8 - 0.8 - 1 - 1 - 1 - ns 1 CLK to Data Output in Low-Z Time tOLZ 1 - 1 - 1 - 1 - 1 - 1 - 1 - ns CLK to Data Output in High-Z Time CAS Latency = 3 tOHZ3 2.7 5.4 2.7 5.4 2.7 5.4 2.7 5.4 3 6 3 6 3 6 ns CAS Latency = 2 tOHZ2 2.7 5.4 2.7 5.4 2.7 5.4 3 6 3 6 3 6 3 6 ns Note : 1.Assume tR / tF (input rise and fall time ) is 1ns If tR & tF > 1ns, then [(tR+tF)/2-1]ns should be added to the parameter 2.Access times to be measured with input signals of 1v/ns edge rate, from 0.8v to 2.0v If tR > 1ns, then (tR/2-0.5)ns should be added to the parameter Rev. 1.3/Aug. 01 8 HY57V281620A AC CHARACTERISTICS II -6 Parameter -7 -K -H -8 -P -S Symbol Unit Min Max Min Max Min Max Min Max Min Max Min Max Min Max Operation tRC 60 - 65 - 60 - 65 - 68 - 70 - 70 - ns Auto Refresh tRRC 60 - 65 - 60 - 65 - 68 - 70 - 70 - ns RAS to CAS Delay tRCD 18 - 20 - 15 - 20 - 20 - 20 - 20 - ns RAS Active Time tRAS 42 100K 45 100K 45 100K 45 100K 48 100K 50 100K 50 100K ns RAS Precharge Time tRP 18 - 20 - 15 - 20 - 20 - 20 - 20 - ns RAS to RAS Bank Active Delay tRRD 12 - 14 - 15 - 15 - 16 - 20 - 20 - ns CAS to CAS Delay tCCD 1 - 1 - 1 - 1 - 1 - 1 - 1 - CLK Write Command to Data-In Delay tWTL 0 - 0 - 0 - 0 - 0 - 0 - 0 - CLK Data-In to Precharge Command tDPL 2 - 2 - 2 - 2 - 1 - 1 - 1 - CLK Data-In to Active Command tDAL 5 - 5 - 4 - 5 - 4 - 3 - 3 - CLK DQM to Data-Out Hi-Z tDQZ 2 - 2 - 2 - 2 - 2 - 2 - 2 - CLK DQM to Data-In Mask tDQM 0 - 0 - 0 - 0 - 0 - 0 - 0 - CLK MRS to New Command tMRD 2 - 2 - 2 - 2 - 2 - 2 - 2 - CLK CAS Latency = 3 tPROZ3 3 - 3 - 3 - 3 - 3 - 3 - 3 - CLK CAS Latency = 2 tPROZ2 2 - 2 - 2 - 2 - 2 - 2 - 2 - CLK Power Down Exit Time tPDE 1 - 1 - 1 - 1 - 1 - 1 - 1 - CLK Self Refresh Exit Time tSRE 1 - 1 - 1 - 1 - 1 - 1 - 1 - CLK Refresh Time tREF - 64 - 64 - 64 - 64 - 64 - 64 - 64 ms Note RAS Cycle Time Precharge to Data Output Hi-Z Note : 1. A new command can be given tRRC after self refresh exit Rev. 1.3/Aug. 01 9 1 HY57V281620A IBIS SPECIFICATION IOH Characteristics (Pull-up) Voltage 100MHz (Min) 100MHz (Max) 66MHz (Min) (V) I(mA) I(mA) I(mA) -2.4 3.3 -27.3 0 0.5 1 1.5 2 2.5 3 3.5 0 -100 3.0 0 -74.1 -0.7 2.6 -21.1 -129.2 -7.5 2.4 -34.1 -153.3 -13.3 2.0 -58.7 -197 -27.5 1.8 -67.3 -226.2 -35.5 1.65 -73 -248 -41.1 1.5 -77.9 -269.7 -47.9 1.4 -80.8 -284.3 -52.4 1.0 -88.6 -344.5 -72.5 0 -93 -502.4 -93 -200 I (mA) 3.45 66MHz and 100MHz Pull-up -300 -400 -500 -600 Voltage (V) IOH Min (100MHz) IOH Min (66MHz) IOH Max (66 /100MHz) IOL Characteristics (Pull-down) 66MHz and 100MHz Pull-down Voltage 100MHz (Min) 100MHz (Max) 66MHz (Min) (V) I(mA) I(mA) I(mA) 0 0 0 0 0.4 27.5 70.2 17.7 0.65 41.8 107.5 26.9 0.85 51.6 133.8 33.3 1.0 58.0 151.2 37.6 1.4 70.7 187.7 46.6 1.5 72.9 194.4 48.0 1.65 75.4 202.5 49.5 1.8 77.0 208.6 50.7 Voltage (V) 1.95 77.6 212.0 51.5 IOL Min (100MHz) 3.0 80.3 219.6 54.2 IOL Min (66MHz) 3.45 81.4 222.6 54.9 Rev. 1.3/Aug. 01 250 I (mA) 200 150 100 50 0 0 0.5 1 1.5 2 2.5 3 3.5 IOL Max (100MHz) 10 HY57V281620A VDD Clamp @ CLK, CKE, CS, DQM & DQ I(mA) 0.0 0.0 0.2 0.0 0.4 0.0 0.6 0.0 0.7 0.0 0.8 0.0 0.9 0.0 1.0 0.23 1.2 1.34 1.4 3.02 1.6 5.06 1.8 7.35 2.0 9.83 2.2 12.48 2.4 15.30 2.6 18.31 20 15 mA VDD (V) Minimum V DD clamp current (Referenced to VDD ) 10 5 0 0 -2.6 -57.23 -2.4 -45.77 -2.2 -38.26 -2.0 -31.22 -1.8 -24.58 -1.6 -18.37 -1.4 -12.56 -1.2 -7.57 -1.0 -3.37 -0.9 -1.75 -0.8 -0.58 -0.7 -0.05 -0.6 0.0 -0.4 0.0 -0.2 0.0 0.0 0.0 Rev. 1.3/Aug. 01 3 I (mA) Minimum VSS clamp current -3 -2.5 -2 -1.5 -1 -0.5 0 0 -10 -20 mA I (mA) 2 Voltage VSS Clamp @ CLK, CKE, CS, DQM & DQ V SS (V) 1 -30 -40 -50 -60 Voltage I (mA) 11 HY57V281620A DEVICE OPERATING OPTION TABLE HY57V281620A(L)T-6 CAS Latency tRCD tRAS tRC tRP tAC tOH 166MHz(6ns) 3CLKs 3CLKs 7CLKs 10CLKs 3CLKs 5.4ns 2.7ns 143MHz(7ns) 3CLKs 3CLKs 6CLKs 9CLKs 3CLKs 5.4ns 2.7ns 133MHz(7.5ns) 2CLKs 3CLKs 6CLKs 9CLKs 3CLKs 5.4ns 2.7ns HY57V281620A(L)T-7 CAS Latency tRCD tRAS tRC tRP tAC tOH 143MHz(7ns) 3CLKs 3CLKs 7CLKs 10CLKs 3CLKs 5.4ns 2.7ns 133MHz(7.5ns) 3CLKs 3CLKs 7CLKs 10CLKs 3CLKs 5.4ns 2.7ns 125MHz(8ns) 3CLKs 3CLKs 7CLKs 10CLKs 3CLKs 6ns 3ns HY57V281620A(L)T-K CAS Latency tRCD tRAS tRC tRP tAC tOH 133MHz(7.5ns) 2CLKs 2CLKs 6CLKs 8CLKs 2CLKs 5.4ns 2.7ns 125MHz(8ns) 3CLKs 3CLKs 6CLKs 9CLKs 3CLKs 6ns 3ns 100MHz(10ns) 2CLKs 2CLKs 5CLKs 7CLKs 2CLKs 6ns 3ns CAS Latency tRCD tRAS tRC tRP tAC tOH 133MHz(7.5ns) 3CLKs 3CLKs 6CLKs 9CLKs 3CLKs 5.4ns 2.7ns 125MHz(8ns) 3CLKs 3CLKs 6CLKs 9CLKs 3CLKs 6ns 3ns 100MHz(10ns) 2CLKs 2CLKs 5CLKs 7CLKs 2CLKs 6ns 3ns CAS Latency tRCD tRAS tRC tRP tAC tOH HY57V281620A(L)T-H HY57V281620A(L)T-8 125MHz(8ns) 3CLKs 3CLKs 6CLKs 9CLKs 3CLKs 6ns 3ns 100MHz(10ns) 2CLKs 2CLKs 5CLKs 7CLKs 2CLKs 6ns 3ns 83MHz(12ns) 2CLKs 2CLKs 4CLKs 6CLKs 2CLKs 6ns 3ns HY57V281620A(L)T-P CAS Latency tRCD tRAS tRC tRP tAC tOH 100MHz(10ns) 2CLKs 2CLKs 5CLKs 7CLKs 2CLKs 6ns 3ns 83MHz(12ns) 2CLKs 2CLKs 5CLKs 7CLKs 2CLKs 6ns 3ns 66MHz(15ns) 2CLKs 2CLKs 4CLKs 6CLKs 2CLKs 6ns 3ns HY57V281620A(L)T-S CAS Latency tRCD tRAS tRC tRP tAC tOH 100MHz(10ns) 3CLKs 2CLKs 5CLKs 7CLKs 2CLKs 6ns 3ns 83MHz(12ns) 2CLKs 2CLKs 5CLKs 7CLKs 2CLKs 6ns 3ns 66MHz(15ns) 2CLKs 2CLKs 4CLKs 6CLKs 2CLKs 6ns 3ns Rev. 1.3/Aug. 01 12 HY57V281620A COMMAND TRUTH TABLE Command A10/ AP ADDR CKEn-1 CKEn CS RAS CAS WE DQM Mode Register Set H X L L L L X OP code H X X X No Operation H X X X L H H H Bank Active H X L L H H X H X L H L H X RA Read Note V L CA Read with Autoprecharge V H Write L H X L H L L X CA Write with Autoprecharge H X L L H L X Precharge selected Bank Burst Stop H DQM H Auto Refresh H H L L L Burst-Read-SingleWRITE H X L L X Entry H L L H Exit L H Self Refresh H L H H L X L V X V X H X X L L X A9 Pin High (Other Pins OP code) L L H X X X X MRS Mode X X L H H H H X X X L H H H H X X X L H H H H X X X L V V V L Precharge power down H X X X 1 Entry V H Precharge All Banks X X Exit Clock Suspend BA Entry Exit L H L H X L H X X X X Note : 1. Exiting Self Refresh occurs by asynchronously bringing CKE from low to high 2. X = Don′t care, H = Logic High, L = Logic Low. BA =Bank Address, RA = Row Address, CA = Column Address, Opcode = Operand Code, NOP = No Operation 3. The burst read sigle write mode is entered by programming the write burst mode bit (A9) in the mode register to a logic 1. Rev. 1.3/Aug. 01 13 HY57V281620A PACKAGE INFORMATION 400mil 54pin Thin Small Outline Package UNIT : mm(inch) 11.938(0.4700) 11.735(0.4620) 22.327(0.8790) 22.149(0.8720) 10.262(0.4040) 10.058(0.3960) 0.150(0.0059) 0.050(0.0020) 0.80(0.0315)BSC Rev. 1.3/Aug. 01 0.400(0.016) 0.300(0.012) 1.194(0.0470) 0.991(0.0390) 5deg 0deg 0.597(0.0235) 0.406(0.0160) 0.210(0.0083) 0.120(0.0047) 14