InAs Quantum Well Hall Element HQ-0611 Shipped in packet-tape reel(4,000pcs per reel) Notice : It is requested to read and accept "IMPORTANT NOTICE" written on the back of the front cover of this catalogue. ●Absolute Maximum Ratings（Ta=25℃） Symbol Limit Unit Max. Input Voltage Vc 6 V Max.Input Current IC 12 mA −40 ∼ ＋125 ℃ −40 ∼ ＋150 ℃ Operating Temp. Range Topr. Storage Temp. Range Tstg. ●Input Voltage Derating Curve 10.0 ●Electrical Characteristics(Ta=25℃) Item Symbol Conditions Output Hall Voltage VH B=50mT, Vc=3V 90 130 mV Input Resistance Rin B=0mT,Ⅰc=0.1mA 750 1150 Ω Output Resistance Rout B=0mT,Ⅰc=0.1mA 750 1150 Ω −6 ＋6 mV Offset Voltage Temp. Coefficient of VH Min. Typ. Max. Unit Electrical Characteristics(Ta=25℃) Vos(Vu) B=0mT, Vc=3V αVH B=50mT, Vc=3V Ta=25∼125℃ αRin B=0mT,Ⅰc=0.1mA Ta=25∼125℃ −0.2 Input Voltage Item 5.0 （v） 0 –60 –40 –20 0 20 40 60 80 Ambient Temp.（℃） 100 120 100 120 %/℃ ●Input Current Derating Curve Temp. Coefficient of Rin −0.2 %/℃ 10 1 2) – VH (T1) X 100 2. VH = VH (T1) X VH (T (T2 – T1) 1 Rin (T2) – Rin (T1) X 100 3. Rin = Rin (T1) X (T – T ) 2 T1 = 25˚C, T2 = 125˚C 1 Input Current Notes:1. VH = VHM – Vos(Vu) (VHM:meter indication) 5 （mA） 0 –60 84 –40 –20 0 20 40 60 80 Ambient Temp.（℃） HQ-0611 •Please be aware that our products are not intended for use in life support equipment, devices, or systems. Use of our products in such applications requires the advance written approval of our sales staff. Certain applications using semiconductor devices may involve potential risks of personal injury, property damage, or loss of life. In order to minimize these risks, adequate design and operating safeguards should be provided by the customer to minimize inherent or procedural hazards. Inclusion of our products in such applications is understood to be fully at the risk of the customer using our devices or systems. •Handling precautions required for preventing electrostatic discharge. •This product contains galium arsenide（GaAs）.Handling and discarding precautions required. ●Dimensional Drawing (Unit : mm) 0.5 0.1 ●Land pattern (for reference only) (Unit : mm) 0.65 b 0.3 0.25 4 0.5 0.25 0.275 0.2 3 c 2 N極 2 0.75 Sensor Center 1 Pinning φ0.2 1（±） 3（ ） Output 2（±） 4（ ） ± Side View ± 0.25 Bottom View Input Upper View ●Characteristic Curves VH-B Rin-T 1000 Output Hall Voltage：VH［mV］ Input Resistance：Rin［Ω］ 1200 1000 800 600 400 200 0 −50 0 50 100 Ic const Ic 800 Vc const 600 I c ＝5［mA］ Vc ＝3［V］ Ta ＝25［℃］ 200 0 −50 150 Vc 400 100 200 300 Magnetic Flux Density：B［mT］ Ambient Temperature：Ta［℃］ i Vos(Vu)-T VH-T 10 Ic const Ic 150 Offset Voltage：Vos［mV］ Output Hall Voltage：VH［mV］ 120 Vc 100 Ic const Vc const 50 0 −50 I c ＝5［mA］ Vc ＝3［V］ B＝50［mT］ 0 8 Vc const 6 I c ＝5［mA］ Vc ＝3［V］ B＝0［mT］ 4 Ic k 2 Vc 50 100 Ambient Temperature：Ta［℃］ ※Magnetic Flux Density 1［mT］=10［G］ 150 0 −50 0 50 100 150 Ambient Temperature：Ta［℃］ in This Example:Rin=850〔Ω〕、Vos=0.8〔mV〕 ［Vc=3〔V〕］ 85